Reduction of radiative lifetime and slow-timescale spectral diffusion in InGaN polarized single-photon sources
Authors:
Tong Wang,
Tongtong Zhu,
Tim J. Puchtler,
Claudius C. Kocher,
Helen P. Springbett,
John C. Jarman,
Luke P. Nuttall,
Rachel A. Oliver,
Robert A. Taylor
Abstract:
Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trap** sites in t…
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Non-polar (11-20) a-plane quantum dots (QDs) are strong candidates for both > 200 K on-chip ultrafast polarized single-photon generation and the investigation of high temperature semiconductor QD photophysics. In this work, we report progress in the growth of a-plane InGaN QDs with a quasi-two-temperature method, which produces smooth epilayers and significantly reduced carrier trap** sites in the proximity of the QDs. Optical characterization has confirmed the ability of such QDs to emit polarized single photons and we have recorded a ~ 45% shorter average radiative lifetime and 65% reduction in the slow-timescale spectral diffusion compared to previous QDs. This growth method is an important development of the non-polar a-plane InGaN platform, opening up more possibilities in single-photon, lasing, and fundamental investigations.
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Submitted 19 September, 2019;
originally announced September 2019.
