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Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires
Authors:
Hamidreza Esmaielpour,
Nabi Isaev,
Jonathan J. Finley,
Gregor Koblmüller
Abstract:
Understanding the origin of hot carrier relaxation in nanowires (NWs) with one-dimensional (1D) geometry is significant for designing efficient hot carrier solar cells with such nanostructures. Here, we study the influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics of catalyst-free InGaAs-InAlAs core-shell NWs. Using steady-state and time-resolved photoluminescen…
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Understanding the origin of hot carrier relaxation in nanowires (NWs) with one-dimensional (1D) geometry is significant for designing efficient hot carrier solar cells with such nanostructures. Here, we study the influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics of catalyst-free InGaAs-InAlAs core-shell NWs. Using steady-state and time-resolved photoluminescence (PL) spectroscopy the dependencies of hot carrier effects on the degree of confinement of photo-generated carriers induced by the nanowire diameter are determined at different lattice temperatures. Analysis of excitation-power dependent data and temperature-dependent PL linewidth broadening reveal that at low temperatures, strong Auger recombination and phonon-bottleneck are responsible for hot carrier effects. Our analysis gives also insights into electron-phonon and ionized impurity scattering, showing opposing trends with NW diameter, and it allows to estimate the Fröhlich coupling constant for the InGaAs NWs. Conversely, with increasing lattice temperature, hot carrier relaxation rates increase due to enhanced Shockley-Read Hall and surface recombination. Time-resolved spectroscopy reveals a fourfold increase in the rate of Shockley-Read-Hall recombination from 6 ns at 10 K to 1.5 ns at 150 K. The findings suggest that minimizing defect densities in the bulk and surfaces of these NWs will be key to enhance hot carrier effects towards higher temperatures.
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Submitted 13 April, 2024;
originally announced April 2024.
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In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
Authors:
G. Koblmüller,
S. Fernández-Garrido,
E. Calleja,
J. S. Speck
Abstract:
Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer…
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Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition.
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Submitted 30 January, 2024;
originally announced January 2024.
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In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction
Authors:
S. Fernández-Garrido,
G. Koblmüller,
E. Calleja,
J. S. Speck
Abstract:
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity o…
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Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga desorption using in situ quadrupole mass spectrometry, which showed Arrhenius behavior with an apparent activation energy of 3.1 eV. Clear signatures of intensity oscillations during reflection high-energy electron diffraction measurements facilitated complementary evaluation of the decomposition rate and highlighted a layer-by-layer decomposition mode in vacuum. Exposure to active nitrogen, either under vacuum or during growth under N-rich growth conditions, strongly reduced the GaN losses due to GaN decomposition.
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Submitted 30 January, 2024;
originally announced January 2024.
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Fate of the superconducting state in floating islands of hybrid nanowire devices
Authors:
E. V. Shpagina,
E. S. Tikhonov,
D. Ruhstorfer,
G. Koblmueller,
V. S. Khrapai
Abstract:
We investigate the impact of transport current on the superconducting order parameter in superconducting islands in full-shell epitaxial Al-InAs nanowires. Depending on a device layout, the suppression of superconductivity occurs in three fundamentally different ways -- by a critical current in the case of superconducting reservoirs and by a critical voltage or by a critical Joule power in the cas…
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We investigate the impact of transport current on the superconducting order parameter in superconducting islands in full-shell epitaxial Al-InAs nanowires. Depending on a device layout, the suppression of superconductivity occurs in three fundamentally different ways -- by a critical current in the case of superconducting reservoirs and by a critical voltage or by a critical Joule power in the case of normal reservoirs. In the latter case, the collapse of the superconducting state depends on the ratio of the dwell time and the electron-phonon relaxation time of quasiparticles in the island. For low resistive and high resistive coupling to the reservoirs, respectively, the relaxation-free regime and the strong electron-phonon relaxation regime are realized. Our results shed light on potential shortcomings of finite-bias transport spectroscopy in floating islands.
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Submitted 22 March, 2024; v1 submitted 17 November, 2023;
originally announced November 2023.
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Hot Carrier Dynamics in InAs-AlAsSb Core-Shell Nanowires
Authors:
Daniel Sandner,
Hamidreza Esmaielpour,
Fabio del Giudice,
Matthias Nuber,
Reinhard Kienberger,
Gregor Koblmüller,
Hristo Iglev
Abstract:
Semiconductor nanowires (NWs) have shown evidence of robust hot carrier effects due to their small dimensions. The relaxation dynamics of hot carriers in these nanostructures, generated by photo-absorption, are of great importance in optoelectronic devices and high efficiency solar cells, such as hot carrier solar cells. Among various III-V semiconductors, indium arsenide (InAs) NWs are promising…
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Semiconductor nanowires (NWs) have shown evidence of robust hot carrier effects due to their small dimensions. The relaxation dynamics of hot carriers in these nanostructures, generated by photo-absorption, are of great importance in optoelectronic devices and high efficiency solar cells, such as hot carrier solar cells. Among various III-V semiconductors, indium arsenide (InAs) NWs are promising candidates for their applications in advanced light harvesting devices due to their high photo-absorptivity and high mobility. Here, we investigate the hot carrier dynamics in InAs-AlAsSb core-shell NWs, as well as bare-core InAs NWs, using ultrafast pump-probe spectroscopy with widely tuned pump and probe energies. We have found a lifetime of 2.3 ps for longitudinal optical (LO) phonons and hot electron lifetimes of about 3 ps and 30 ps for carrier-carrier interactions and electron-phonon interactions, respectively. In addition, we have investigated the electronic states in the AlAsSb-shell and found that, despite the large band offset of the core-shell design in the conduction band, excited carriers remain in the shell longer than 100 ps. Our results indicate evidence of plasmon-tailored core-shell NWs for efficient light harvesting devices, which could open potential avenues for improving the efficiency of photovoltaic solar cells.
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Submitted 25 October, 2022; v1 submitted 21 October, 2022;
originally announced October 2022.
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Self-induced ultrafast electron-hole plasma temperature oscillations in nanowire lasers
Authors:
Andreas Thurn,
Jochen Bissinger,
Stefan Meinecke,
Paul Schmiedeke,
Sang Soon Oh,
Weng W. Chow,
Kathy Lüdge,
Gregor Koblmüller,
Jonathan J. Finley
Abstract:
Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial. However, the roles played by their resonator geometry and the microscopic processes that mediate energy exchange between the photonic, electronic, and phononic subsys…
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Nanowire lasers can be monolithically and site-selectively integrated onto silicon photonic circuits. To assess their full potential for ultrafast opto-electronic devices, a detailed understanding of their lasing dynamics is crucial. However, the roles played by their resonator geometry and the microscopic processes that mediate energy exchange between the photonic, electronic, and phononic subsystems are largely unexplored. Here, we study the dynamics of GaAs-AlGaAs core-shell nanowire lasers at cryogenic temperatures using a combined experimental and theoretical approach. Our results indicate that these NW lasers exhibit sustained intensity oscillations with frequencies ranging from 160 GHz to 260 GHz. As the underlying physical mechanism, we identified self-induced electron-hole plasma temperature oscillations resulting from a dynamic competition between photoinduced carrier heating and cooling via phonon scattering. These dynamics are intimately linked to the strong interaction between the lasing mode and the gain material, which arises from the wavelength-scale dimensions of these lasers. We anticipate that our results could lead to new approaches for ultrafast intensity and phase modulation of chip-integrated nanoscale semiconductor lasers.
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Submitted 29 May, 2023; v1 submitted 26 August, 2021;
originally announced August 2021.
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High-dimensional acousto-optoelectric correlation spectroscopy reveals coupled carrier dynamics in polytypic nanowires
Authors:
Maximilian M. Sonner,
Daniel Rudolph,
Gregor Koblmüller,
Hubert J. Krenner
Abstract:
The authors combine acousto-optoelectric and multi-channel photon correlation spectroscopy to probe spatio-temporal carrier dynamics induced by a piezoelectric surface acoustic wave (SAW). The technique is implemented by combining phase-locked optical micro-photoluminescence spectroscopy and simultaneous three-channel time resolved detection. From the recorded time correlated single photon countin…
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The authors combine acousto-optoelectric and multi-channel photon correlation spectroscopy to probe spatio-temporal carrier dynamics induced by a piezoelectric surface acoustic wave (SAW). The technique is implemented by combining phase-locked optical micro-photoluminescence spectroscopy and simultaneous three-channel time resolved detection. From the recorded time correlated single photon counting data the time transients of individual channels and the second and third order correlation functions are obtained with sub-nanosecond resolution. The method is validated by probing the correlations SAW-driven carrier dynamics between three decay channels of a single polytypic semiconductor nanowire on a conventional LiNbO$_\mathrm{3}$ SAW delay line chip. The method can be readily applied to other types of nanosystems and probe SAW-regulated charge state preparation in quantum dots, charge transfer processes in van der Waals heterostructures or other types of hybrid nanoarchitectures.
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Submitted 20 August, 2021;
originally announced August 2021.
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Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices
Authors:
A. O. Denisov,
A. V. Bubis,
S. U. Piatrusha,
N. A. Titova,
A. G. Nasibulin,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmueller,
E. S. Tikhonov,
V. S. Khrapai
Abstract:
Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like and hole-like quasiparticle excitations. In this work, we show how a nonlocal shot n…
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Nonlocal quasiparticle transport in normal-superconductor-normal (NSN) hybrid structures probes sub-gap states in the proximity region and is especially attractive in the context of Majorana research. Conductance measurement provides only partial information about nonlocal response composed from both electron-like and hole-like quasiparticle excitations. In this work, we show how a nonlocal shot noise measurement delivers a missing puzzle piece in NSN InAs nanowire-based devices. We demonstrate that in a trivial superconducting phase quasiparticle response is practically charge-neutral, dominated by the heat transport component with a thermal conductance being on the order of conductance quantum. This is qualitatively explained by numerous Andreev reflections of a diffusing quasiparticle, that makes its charge completely uncertain. Consistently, strong fluctuations and sign reversal are observed in the sub-gap nonlocal conductance, including occasional Andreev rectification signals. Our results prove conductance and noise as complementary measurements to characterize quasiparticle transport in superconducting proximity devices.
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Submitted 2 August, 2021; v1 submitted 6 January, 2021;
originally announced January 2021.
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Ultrathin catalyst-free InAs nanowires on silicon with distinct 1D sub-band transport properties
Authors:
Fabio del Giudice,
Jonathan Becker,
Claudio de Rose,
Markus Doeblinger,
Daniel Ruhstorfer,
Linnea Suomenniemi,
Hubert Riedl,
Jonathan J. Finley,
Gregor Koblmueller
Abstract:
Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired. Here, we demonstrate two site-selective synthesis methods that achieve epitaxial, high aspect ratio InAs NWs on Si with ultrathin diameters b…
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Ultrathin InAs nanowires (NW) with one-dimensional (1D) sub-band structure are promising materials for advanced quantum-electronic devices, where dimensions in the sub-30 nm diameter limit together with post-CMOS integration scenarios on Si are much desired. Here, we demonstrate two site-selective synthesis methods that achieve epitaxial, high aspect ratio InAs NWs on Si with ultrathin diameters below 20 nm. The first approach exploits direct vapor-solid growth to tune the NW diameter by interwire spacing, mask opening size and growth time. The second scheme explores a unique reverse-reaction growth by which the sidewalls of InAs NWs are thermally decomposed under controlled arsenic flux and annealing time. Interesting kinetically limited dependencies between interwire spacing and thinning dynamics are found, yielding diameters as low as 12 nm for sparse NW arrays. We clearly verify the 1D sub-band structure in ultrathin NWs by pronounced conductance steps in low-temperature transport measurements using back-gated NW-field effect transistors. Correlated simulations reveal single- and double degenerate conductance steps, which highlight the rotational hexagonal symmetry and reproduce the experimental traces in the diffusive 1D transport limit. Modelling under the realistic back-gate configuration further evidences regimes that lead to asymmetric carrier distribution and lifts of the degeneracy in dependence of gate bias.
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Submitted 5 August, 2020;
originally announced August 2020.
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Heat-mode excitation in a proximity superconductor
Authors:
A. O. Denisov,
A. V. Bubis,
S. U. Piatrusha,
N. A. Titova,
A. G. Nasibulin,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmueller,
E. S. Tikhonov,
V. S. Khrapai
Abstract:
Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much…
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Mesoscopic superconductivity deals with various quasiparticle excitation modes, only one of them -- the charge-mode -- being directly accessible for conductance measurements due to the imbalance in populations of quasi-electron and quasihole excitation branches. Other modes carrying heat or even spin, valley etc. currents populate the branches equally and are charge-neutral, which makes them much harder to control. This noticeable gap in the experimental studies of mesoscopic non-equilibrium superconductivity can be filled by going beyond the conventional DC transport measurements and exploiting spontaneous current fluctuations. Here, we perform such an experiment and investigate the transport of heat in an open hybrid device based on a superconductor proximitized InAs nanowire. Using shot noise measurements, we investigate sub-gap Andreev heat guiding along the superconducting interface and fully characterize it in terms of the thermal conductance on the order of $G_\mathrm{th}\sim e^2/h$, tunable by a back gate voltage. Understanding of the heat-mode also uncovers its implicit signatures in the non-local charge transport. Our experiments open a direct pathway to probe generic charge-neutral excitations in superconducting hybrids.
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Submitted 25 April, 2022; v1 submitted 17 June, 2020;
originally announced June 2020.
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Noise insights into electronic transport
Authors:
S. U. Piatrusha,
L. V. Ginzburg,
E. S. Tikhonov,
D. V. Shovkun,
G. Koblmueller,
A. V. Bubis,
A. K. Grebenko,
A. G. Nasibulin,
V. S. Khrapai
Abstract:
Typical experimental measurement is set up as a study of the system's response to a stationary external excitation. This approach considers any random fluctuation of the signal as spurious contribution which is to be eliminated via time-averaging or, equivalently, bandwidth reduction. Beyond that lies a conceptually different paradigm -- the measurement of the system's spontaneous fluctuations. Th…
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Typical experimental measurement is set up as a study of the system's response to a stationary external excitation. This approach considers any random fluctuation of the signal as spurious contribution which is to be eliminated via time-averaging or, equivalently, bandwidth reduction. Beyond that lies a conceptually different paradigm -- the measurement of the system's spontaneous fluctuations. The goal of this overview article is to demonstrate how current noise measurements bring insight into hidden features of electronic transport in various mesoscopic conductors, ranging from 2D topological insulators to individual carbon nanotubes.
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Submitted 6 June, 2018;
originally announced June 2018.
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Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films
Authors:
Bo Sun,
Georg Haunschild,
Carlos Polanco,
James Ju,
Lucas Lindsay,
Gregor Koblmüller,
Yee Kan Koh
Abstract:
Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III-V semiconductors, and adversely affect heat dissipation in e.g., nitride-based high-power electronic devices. For decades, conventional models based on nonlinear elasticity theory have predicted this thermal resistance is only appreciable when heat flux is perpendicular to the disloca…
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Dislocations, one-dimensional lattice imperfections, are common to technologically important materials such as III-V semiconductors, and adversely affect heat dissipation in e.g., nitride-based high-power electronic devices. For decades, conventional models based on nonlinear elasticity theory have predicted this thermal resistance is only appreciable when heat flux is perpendicular to the dislocations. However, this dislocation-induced anisotropic thermal transport has yet to be seen experimentally. In this study, we measure strong thermal transport anisotropy governed by highly oriented threading dislocation arrays along the cross-plane direction in micron-thick, single-crystal indium nitride (InN) films. We find that the cross-plane thermal conductivity is more than tenfold higher than the in-plane thermal conductivity at 80 K when the dislocation density is on the order of ~3x10^10 cm^-2. This large anisotropy is not predicted by the conventional models. With enhanced understanding of dislocation-phonon interactions, our results open new regimes for tailoring anisotropic thermal transport with line defects, and will facilitate novel methods for directed heat dissipation in thermal management of diverse device applications.
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Submitted 9 April, 2018;
originally announced April 2018.
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Proximity effect and interface transparency in Al/InAs-nanowire/Al diffusive junctions
Authors:
A. V. Bubis,
A. O. Denisov,
S. U. Piatrusha,
I. E. Batov,
J. Becker,
J. Treu,
D. Ruhstorfer,
G. Koblmüller,
V. S. Khrapai
Abstract:
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap va…
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We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport signatures characteristic of diffusive junctions with highly transparent interfaces - sizable excess current, re-entrant resistance effect and proximity gap values ($Δ_N$) close to the Al gap ($Δ_0$). At decreasing $V_g$, we observe a reduction of the proximity gap down to $Δ_N\approxΔ_0/2$ at NW conductances $\sim2e^2/h$, which is interpreted in terms of carrier density dependent reduction of the Al/InAs interface transparency. We demonstrate that the experimental behavior of $Δ_N$ is closely reproduced by a model with shallow potential barrier at the Al/InAs interface.
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Submitted 1 May, 2017;
originally announced May 2017.
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Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser
Authors:
B. Mayer,
A. Regler,
S. Sterzl,
T. Stettner,
G. Koblmüller,
M. Kaniber,
B. Lingnau,
K. Lüdge,
J. J. Finley
Abstract:
The ability to generate phase-stabilised trains of ultrafast laser pulses by mode-locking underpins photonics research in fields such as precision metrology and spectroscopy. However, the complexity of conventional mode-locked laser systems, combined with the need for a mechanism to induce active or passive phase locking between resonator modes, has hindered their realisation at the nanoscale. Her…
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The ability to generate phase-stabilised trains of ultrafast laser pulses by mode-locking underpins photonics research in fields such as precision metrology and spectroscopy. However, the complexity of conventional mode-locked laser systems, combined with the need for a mechanism to induce active or passive phase locking between resonator modes, has hindered their realisation at the nanoscale. Here, we demonstrate that GaAs-AlGaAs nanowire lasers are capable of emitting pairs of phase-locked picosecond laser pulses when subject to non-resonant pulsed optical excitation with a repetition frequency up to ~200GHz. By probing the two-pulse interference that emerges within the homogeneously broadened laser emission, we show that the optical phase is preserved over timescales extending beyond ~30ps, much longer than the emitted laser pulse duration (~2ps). Simulations performed by solving the optical Bloch equations produce good quantitative agreement with experiments, revealing how the phase information is stored in the gain medium close to transparency. Our results open the way to applications such as on-chip, ultra-sensitive Ramsey comb spectroscopy.
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Submitted 7 March, 2016;
originally announced March 2016.
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Ultrafast photodetection in the quantum wells of single AlGaAs/GaAs-based nanowires
Authors:
Nadine Erhard,
Stefan Zenger,
Stefanie Morkötter,
Daniel Rudolph,
Matthias Weiss,
Hubert J. Krenner,
Helmut Karl,
Gerhard Abstreiter,
Jonathan J. Finley,
Gregor Koblmüller,
Alexander W. Holleitner
Abstract:
We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based…
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We investigate the ultrafast optoelectronic properties of single Al0.3Ga0.7As/GaAs-core-shell-nanowires. The nanowires contain GaAs-based quantum wells. For a resonant excitation of the quantum wells, we find a picosecond photocurrent which is consistent with an ultrafast lateral expansion of the photogenerated charge carriers. This Dember-effect does not occur for an excitation of the GaAs-based core of the nanowires. Instead, the core exhibits an ultrafast displacement current and a photo-thermoelectric current at the metal Schottky contacts. Our results uncover the optoelectronic dynamics in semiconductor core-shell nanowires comprising quantum wells, and they demonstrate the possibility to use the low-dimensional quantum well states therein for ultrafast photoswitches and photodetectors.
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Submitted 16 November, 2015;
originally announced November 2015.
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Photocurrents in a Single InAs Nanowire/ Silicon Heterojunction
Authors:
Andreas Brenneis,
Jan Overbeck,
Julian Treu,
Simon Hertenberger,
Stefanie Morkötter,
Markus Döblinger,
Jonathan J. Finley,
Gerhard Abstreiter,
Gregor Koblmüller,
Alexander W. Holleitner
Abstract:
We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si…
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We investigate the optoelectronic properties of single indium arsenide nanowires, which are grown vertically on p-doped silicon substrates. We apply a scanning photocurrent microscopy to study the optoelectronic properties of the single heterojunctions. The measured photocurrent characteristics are consistent with an excess charge carrier transport through mid-gap trap states, which form at the Si/InAs heterojunctions. Namely, the trap states add an additional transport path across a heterojunction, and the charge of the defects changes the band bending at the junction. The bending gives rise to a photovoltaic effect at a small bias voltage. In addition, we observe a photoconductance effect within the InAs nanowires at large biases.
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Submitted 5 October, 2015;
originally announced October 2015.
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Ultrafast photocurrents and THz generation in single InAs-nanowires
Authors:
Nadine Erhard,
Paul Seifert,
Leonhard Prechtel,
Simon Hertenberger,
Helmut Karl,
Gerhard Abstreiter,
Gregor Koblmuller,
Alexander W. Holleitner
Abstract:
To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contr…
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To clarify the ultrafast temporal interplay of the different photocurrent mechanisms occurring in single InAs-nanowire-based circuits, an on-chip photocurrent pump-probe spectroscopy based on coplanar striplines was utilized. The data are interpreted in terms of a photo-thermoelectric current and the transport of photogenerated holes to the electrodes as the dominating ultrafast photocurrent contributions. Moreover, it is shown that THz radiation is generated in the optically excited InAs-nanowires, which is interpreted in terms of a dominating photo-Dember effect. The results are relevant for nanowire-based optoelectronic and photovoltaic applications as well as for the design of nanowire-based THz sources.
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Submitted 12 February, 2015;
originally announced February 2015.
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Independent dynamic acousto-mechanical and electrostatic control of individual quantum dots in a LiNbO$_{3}$-GaAs hybrid
Authors:
J. Pustiowski,
K. Müller,
M. Bichler,
G. Koblmüller,
J. J. Finley,
A. Wixforth,
H. J. Krenner
Abstract:
We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a LiNbO$_{3}$-GaAs hybrid device. The surface acoustic wave is excited directly on the strong piezoelectric LiNbO$_{3}$ onto which a GaAs-based p-i-n photodiode cont…
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We demonstrate tuning of single quantum dot emission lines by the combined action of the dynamic acoustic field of a radio frequency surface acoustic wave and a static electric field. Both tuning parameters are set all-electrically in a LiNbO$_{3}$-GaAs hybrid device. The surface acoustic wave is excited directly on the strong piezoelectric LiNbO$_{3}$ onto which a GaAs-based p-i-n photodiode containing a single layer of quantum dots was epitaxially transferred. We demonstrate dynamic spectral tuning with bandwidths exceeding 3 meV of single quantum dot emission lines due to deformation potential coupling. The center energy of the dynamic spectral oscillation can be independently programmed simply by setting the bias voltage applied to the diode.
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Submitted 16 December, 2014; v1 submitted 22 October, 2014;
originally announced October 2014.
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Dynamic Acoustic Control of Individual Optically Active Quantum Dot-like Emission Centers in Heterostructure Nanowires
Authors:
Matthias Weiß,
Jörg B. Kinzel,
Florian J. R. Schülein,
Michael Heigl,
Daniel Rudolph,
Stefanie Morkötter,
Markus Döblinger,
Max Bichler,
Gerhard Abstreiter,
Jonathan J. Finley,
Gregor Koblmüller,
Achim Wixforth,
Hubert J. Krenner
Abstract:
We probe and control the optical properties of emission centers forming in radial het- erostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy and occupancy state on a nanosec- ond timescale. In the spectral osci…
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We probe and control the optical properties of emission centers forming in radial het- erostructure GaAs-Al0.3Ga0.7As nanowires and show that these emitters, located in Al0.3Ga0.7As layers, can exhibit quantum-dot like characteristics. We employ a radio frequency surface acoustic wave to dynamically control their emission energy and occupancy state on a nanosec- ond timescale. In the spectral oscillations we identify unambiguous signatures arising from both the mechanical and electrical component of the surface acoustic wave. In addition, differ- ent emission lines of a single quantum dot exhibit pronounced anti-correlated intensity oscilla- tions during the acoustic cycle. These arise from a dynamically triggered carrier extraction out of the quantum dot to a continuum in the radial heterostructure. Using finite element modeling and Wentzel-Kramers-Brillouin theory we identify quantum tunneling as the underlying mech- anism. These simulation results quantitatively reproduce the observed switching and show that in our systems these quantum dots are spatially separated from the continuum by > 10.5 nm.
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Submitted 8 October, 2014;
originally announced October 2014.
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Directional and dynamic modulation of the optical emission of an individual GaAs nanowire using surface acoustic waves
Authors:
Jörg B. Kinzel,
Daniel Rudolph,
Max Bichler,
Gerhard Abstreiter,
Jonathan J. Finley,
Gregor Koblmüller,
Achim Wixforth,
Hubert J. Krenner
Abstract:
We report on optical experiments performed on individual GaAs nanowires and the ma- nipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission intensity for the surface acoustic wave propagation aligned with the axis of the nanowire. Furthermore, we demonstrate that this quenching is dynamical as it shows a…
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We report on optical experiments performed on individual GaAs nanowires and the ma- nipulation of their temporal emission characteristics using a surface acoustic wave. We find a pronounced, characteristic suppression of the emission intensity for the surface acoustic wave propagation aligned with the axis of the nanowire. Furthermore, we demonstrate that this quenching is dynamical as it shows a pronounced modulation as the local phase of the surface acoustic wave is tuned. These effects are strongly reduced for a SAW applied in the direction perpendicular to the axis of the nanowire due to their inherent one-dimensional geometry. We resolve a fully dynamic modulation of the nanowire emission up to 678 MHz not limited by the physical properties of the nanowires.
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Submitted 8 October, 2014;
originally announced October 2014.
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Radio frequency occupancy state control of a single nanowire quantum dot
Authors:
Matthias Weiß,
Florian J. R. Schülein,
Jörg B. Kinzel,
Michael Heigl,
Daniel Rudolph,
Max Bichler,
Gerhard Abstreiter,
Jonathan J. Finley,
Achim Wixforth,
Gregor Koblmüller,
Hubert J. Krenner
Abstract:
The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs-AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity o…
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The excitonic occupancy state of a single, nanowire-based, heterostructure quantum dot is dynamically programmed by a surface acoustic wave. The quantum dot is formed by an interface or thickness fluctuation of a GaAs QW embedded in a AlGaAs shell of a GaAs-AlGaAs core-shell nanowire. As we tune the time at which carriers are photogenerated during the acoustic cycle, we find pronounced intensity oscillations of neutral and negatively charged excitons. At high acoustic power levels these oscillations become anticorrelated which enables direct acoustic programming of the dot's charge configuration, emission intensity and emission wavelength. Numerical simulations confirm that the observed modulations arise from acoustically controlled modulations of the electron and electron-hole-pair concentrations at the position of the quantum dot.
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Submitted 23 May, 2014; v1 submitted 11 April, 2014;
originally announced April 2014.
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Acoustically regulated carrier injection into a single optically active quantum dot
Authors:
Florian J. R. Schülein,
Kai Müller,
Max Bichler,
Gregor Koblmüller,
Jonathan J. Finley,
Achim Wixforth,
Hubert J. Krenner
Abstract:
We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time of formation of neutral $(X^0)$ and negatively charged $(X^-)$ excitons. We identify underlying, characteristic formation pathways of both few-particle states in…
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We study the carrier injection into a single InGaAs/GaAs quantum dot regulated by a radio frequency surface acoustic wave. We find that the time of laser excitation during the acoustic cycle programs both the emission intensities and time of formation of neutral $(X^0)$ and negatively charged $(X^-)$ excitons. We identify underlying, characteristic formation pathways of both few-particle states in the time-domain experiments and show that both exciton species can be formed either with the optical pump or at later times by injection of single electrons and holes "surfing" the acoustic wave. All experimental observations are in excellent agreement with calculated electron and hole trajectories in the plane of the two-dimensional wetting layer which is dynamically modulated by the acoustically induced piezoelectric potentials. Taken together, our findings provide insight on both the onset of acousto-electric transport of electrons and holes and their conversion into the optical domain after regulated injection into a single quantum dot emitter.
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Submitted 25 June, 2013;
originally announced June 2013.
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All optical quantum control of a spin-quantum state and ultrafast transduction into an electric current
Authors:
K. Müller,
T. Kaldewey,
R. Ripszam,
J. S. Wildmann,
A. Bechtold,
M. Bichler,
G. Koblmüller,
G. Abstreiter,
J. J. Finley
Abstract:
The ability to control and exploit quantum coherence and entanglement drives research across many fields ranging from ultra-cold quantum gases to spin systems in condensed matter. Transcending different physical systems, optical approaches have proven themselves to be particularly powerful, since they profit from the established toolbox of quantum optical techniques, are state-selective, contact-l…
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The ability to control and exploit quantum coherence and entanglement drives research across many fields ranging from ultra-cold quantum gases to spin systems in condensed matter. Transcending different physical systems, optical approaches have proven themselves to be particularly powerful, since they profit from the established toolbox of quantum optical techniques, are state-selective, contact-less and can be extremely fast. Here, we demonstrate how a precisely timed sequence of monochromatic ultrafast (~2-5 ps) optical pulses, with a well defined polarisation can be used to prepare arbitrary superpositions of exciton spin states in a semiconductor quantum dot, achieve ultrafast control of the spin-wavefunction without an applied magnetic field and make high fidelity read-out the quantum state in an arbitrary basis simply by detecting a strong (~2-10$ pA) electric current flowing in an external circuit. The results obtained show that the combined quantum state preparation, control and read-out can be performed with a near-unity (>97%) fidelity. Our methods are fully applicable to other quantum systems and have strong potential for scaling to more complex systems such as molecules and spin-chains.
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Submitted 12 December, 2012;
originally announced December 2012.
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Dirac cone shift of a passivated topological Bi2Se3 interface state
Authors:
Gregory S. Jenkins,
Andrei B. Sushkov,
Don C. Schmadel,
Max Bichler,
Gregor Koblmueller,
Matthew Brahlek,
Namrata Bansal,
Seongshik Oh,
H. Dennis Drew
Abstract:
Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac point to above the conduction band edge. A precipitous drop in the scattering rate with Fermi energy is observed that is interpreted as the surface state decoupling from bulk states…
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Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac point to above the conduction band edge. A precipitous drop in the scattering rate with Fermi energy is observed that is interpreted as the surface state decoupling from bulk states and evidence of a shift of the Dirac point towards mid-gap. Near the Dirac point, potential fluctuations of 50 meV are deduced from an observed loss of differential optical spectral weight near the Dirac point. Potential fluctuations are reduced by a factor of two at higher surface Fermi levels in the vicinity of the conduction band edge inferred from the width of the scattering rate step. The passivated topological interface state attains a high mobility of 3500 cm2/Vsec near the Dirac point.
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Submitted 10 December, 2012; v1 submitted 19 August, 2012;
originally announced August 2012.
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Surface acoustic wave controlled charge dynamics in a thin InGaAs quantum well
Authors:
Florian J. R. Schülein,
Jens Pustiowski,
Kai Müller,
Max Bichler,
Gregor Koblmüller,
Jonathan J. Finley,
Achim Wixforth,
Hubert J. Krenner
Abstract:
We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numer- ical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carri…
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We experimentally study the optical emission of a thin quantum well and its dynamic modulation by a surface acoustic wave (SAW). We observe a characteristic transition of the modulation from one maximum to two maxima per SAW cycle as the acoustic power is increased which we find in good agreement with numer- ical calculations of the SAW controlled carrier dynamics. At low acoustic powers the carrier mobilites limit electron-hole pair dissociation, whereas at high power levels the induced electric fields give rise to efficient acousto-electric carrier transport. The direct comparison between the experimental data and the numerical simulations provide an absolute calibration of the local SAW phase.
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Submitted 4 May, 2012;
originally announced May 2012.
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Coupling of guided Surface Plasmon Polaritons to proximal self-assembled InGaAs Quantum Dots
Authors:
Gregor Bracher,
Konrad Schraml,
Mäx Blauth,
Clemens Jakubeit,
Kai Müller,
Gregor Koblmüller,
Max Bichler,
Michael Kaniber,
Jonathan J. Finley
Abstract:
We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 {\pm} 1.7 μm to 27.5 {\pm} 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containin…
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We present investigations of the propagation length of guided surface plasmon polaritons along Au waveguides on GaAs and their coupling to near surface InGaAs self-assembled quantum dots. Our results reveal surface plasmon propagation lengths ranging from 13.4 {\pm} 1.7 μm to 27.5 {\pm} 1.5 μm as the width of the waveguide increases from 2-5 μm. Experiments performed on active structures containing near surface quantum dots clearly show that the propagating plasmon mode excites the dot, providing a new method to spatially image the surface plasmon mode. We use low temperature confocal microscopy with polarization control in the excitation and detection channel. After excitation, plasmons propagate along the waveguide and are scattered into the far field at the end. By comparing length and width evolution of the waveguide losses we determine the plasmon propagation length to be 27.5 {\pm} 1.5 μm at 830 nm (for a width of 5 μm), reducing to 13.4 {\pm} 1.7 μm for a width of 2 μm. For active structures containing low density InGaAs quantum dots at a precisely controlled distance 7-120 nm from the Au-GaAs interface, we probed the mutual coupling between the quantum dot and plasmon mode. These investigations reveal a unidirectional energy transfer from the propagating surface plasmon to the quantum dot. The exquisite control of the position and shape afforded by lithography combined with near surface QDs promises efficient on-chip generation and guiding of single plasmons for future applications in nanoscale quantum optics operating below the diffraction limit.
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Submitted 22 March, 2012; v1 submitted 21 March, 2012;
originally announced March 2012.
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In vacancies in InN grown by plasma-assisted molecular beam epitaxy
Authors:
Floris Reurings,
Filip Tuomisto,
Chad S. Gallinat,
Gregor Koblmüller,
James S. Speck
Abstract:
The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted molecular beam epitaxy. The results suggest that the structural quality of the material and limited diffusion of surface adatoms during growth dictate the In vacancy formation in low electron-density undoped epitaxial In…
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The authors have applied positron annihilation spectroscopy to study the effect of different growth conditions on vacancy formation in In- and N-polar InN grown by plasma-assisted molecular beam epitaxy. The results suggest that the structural quality of the material and limited diffusion of surface adatoms during growth dictate the In vacancy formation in low electron-density undoped epitaxial InN, while growth conditions and thermodynamics have a less important role, contrary to what is observed in, e.g., GaN. Further, the results imply that in high quality InN, the electron mobility is likely limited not by ionized point defect scattering, but rather by threading dislocations.
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Submitted 4 October, 2010;
originally announced October 2010.
