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Isotropic plasma-thermal atomic layer etching of superconducting TiN films using sequential exposures of molecular oxygen and SF$_6/$H$_2$ plasma
Authors:
Azmain A. Hossain,
Haozhe Wang,
David S. Catherall,
Martin Leung,
Harm C. M. Knoops,
James R. Renzas,
Austin J. Minnich
Abstract:
Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging subtractive fabrication method which is capable of etching with Angstrom-scale etch depth control and potentially less damage. However, while ALE processes for TiN have b…
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Microwave loss in superconducting titanium nitride (TiN) films is attributed to two-level systems in various interfaces arising in part from oxidation and microfabrication-induced damage. Atomic layer etching (ALE) is an emerging subtractive fabrication method which is capable of etching with Angstrom-scale etch depth control and potentially less damage. However, while ALE processes for TiN have been reported, they either employ HF vapor, incurring practical complications; or the etch rate lacks the desired control. Further, the superconducting characteristics of the etched films have not been characterized. Here, we report an isotropic plasma-thermal TiN ALE process consisting of sequential exposures to molecular oxygen and an SF$_6$/H$_2$ plasma. For certain ratios of SF$_6$:H$_2$ flow rates, we observe selective etching of TiO$_2$ over TiN, enabling self-limiting etching within a cycle. Etch rates were measured to vary from 1.1 Å/cycle at 150 $^\circ$C to 3.2 Å/cycle at 350 $^\circ$C using ex-situ ellipsometry. We demonstrate that the superconducting critical temperature of the etched film does not decrease beyond that expected from the decrease in film thickness, highlighting the low-damage nature of the process. These findings have relevance for applications of TiN in microwave kinetic inductance detectors and superconducting qubits.
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Submitted 6 July, 2023;
originally announced July 2023.
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Plasma-enhanced atomic layer deposition of Al$_2$O$_3$ on graphene using monolayer hBN as interfacial layer
Authors:
Barbara Canto,
Martin Otto,
Michael J. Powell,
Vitaliy Babenko,
Aileen O Mahony,
Harm Knoops,
Ravi S. Sundaram,
Stephan Hofmann,
Max C. Lemme,
Daniel Neumaier
Abstract:
The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphe…
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The deposition of dielectric materials on graphene is one of the bottlenecks for unlocking the potential of graphene in electronic applications. In this paper we demonstrate the plasma enhanced atomic layer deposition of 10 nm thin high quality Al$_2$O$_3$ on graphene using a monolayer of hBN as protection layer. Raman spectroscopy was performed to analyze possible structural changes of the graphene lattice caused by the plasma deposition. The results show that a monolayer of hBN in combination with an optimized deposition process can effectively protect graphene from damage, while significant damage was observed without an hBN layer. Electrical characterization of double gated graphene field effect devices confirms that the graphene did not degrade during the plasma deposition of Al$_2$O$_3$. The leakage current densities were consistently below 1 nA/mm for electric fields across the insulators of up to 8 MV/cm, with irreversible breakdown happening above. Such breakdown electric fields are typical for Al$_2$O$_3$ and can be seen as an indicator for high quality dielectric films.
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Submitted 24 August, 2022;
originally announced August 2022.
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Surface zeta potential and diamond growth on gallium oxide single crystal
Authors:
Soumen Mandal,
Karsten Arts,
Harm C. M. Knoops,
Jerome Cuenca,
Georgina Klemencic,
Oliver A. Williams
Abstract:
In this work a strategy to grow diamond on $β$-Ga$_2$O$_3$ has been presented. The $ζ$-potential of the $β$-Ga$_2$O$_3$ substrate was measured and it was found to be negative with an isoelectric point at pH $\sim$ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of galliu…
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In this work a strategy to grow diamond on $β$-Ga$_2$O$_3$ has been presented. The $ζ$-potential of the $β$-Ga$_2$O$_3$ substrate was measured and it was found to be negative with an isoelectric point at pH $\sim$ 4.6. The substrates were seeded with mono-dispersed diamond solution for growth of diamond. The seeded substrates were etched when exposed to diamond growth plasma and globules of gallium could be seen on the surface. To overcome the problem $\sim$100 nm of SiO$_2$ and Al$_2$O$_3$ were deposited using atomic layer deposition. The nanodiamond seeded SiO$_2$ layer was effective in protecting the $β$-Ga$_2$O$_3$ substrate and thin diamond layers could be grown. In contrast Al$_2$O$_3$ layers were damaged when exposed to diamond growth plasma. The thin diamond layers were characterised with scanning electron microscopy and Raman spectroscopy. Raman spectroscopy revealed the diamond layer to be under compressive stress of 1.3 -- 2.8GPa.
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Submitted 2 April, 2021;
originally announced April 2021.
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Dynamical transitions in incommensurate systems
Authors:
L. Consoli,
H. Knops,
A. Fasolino
Abstract:
In the dynamics of the undamped Frenkel-Kontorova model with kinetic terms, we find a transition between two regimes, a floating incommensurate and a pinned incommensurate phase. This behavior is compared to the static version of the model. A remarkable difference is that, while in the static case the two regimes are separated by a single transition (the Aubry transition), in the dynamical case…
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In the dynamics of the undamped Frenkel-Kontorova model with kinetic terms, we find a transition between two regimes, a floating incommensurate and a pinned incommensurate phase. This behavior is compared to the static version of the model. A remarkable difference is that, while in the static case the two regimes are separated by a single transition (the Aubry transition), in the dynamical case the transition is characterized by a critical region, in which different phenomena take place at different times. In this paper, the generalized angular momentum we have previously introduced, and the dynamical modulation function are used to begin a characterization of this critical region. We further elucidate the relation between these two quantities, and present preliminary results about the order of the dynamical transition.
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Submitted 4 July, 2002; v1 submitted 28 November, 2001;
originally announced November 2001.
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Breakdown of a conservation law in incommensurate systems
Authors:
L. Consoli,
H. J. F. Knops,
A. Fasolino
Abstract:
We show that invariance properties of the Lagrangian of an incommensurate system, as described by the Frenkel Kontorova model, imply the existence of a generalized angular momentum which is an integral of motion if the system remains floating. The behavior of this quantity can therefore monitor the character of the system as floating (when it is conserved) or locked (when it is not). We find tha…
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We show that invariance properties of the Lagrangian of an incommensurate system, as described by the Frenkel Kontorova model, imply the existence of a generalized angular momentum which is an integral of motion if the system remains floating. The behavior of this quantity can therefore monitor the character of the system as floating (when it is conserved) or locked (when it is not). We find that, during the dynamics, the non-linear couplings of our model cause parametric phonon excitations which lead to the appearance of Umklapp terms and to a sudden deviation of the generalized momentum from a constant value, signalling a dynamical transition from a floating to a pinned state. We point out that this transition is related but does not coincide with the onset of sliding friction which can take place when the system is still floating.
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Submitted 27 March, 2001; v1 submitted 8 February, 2001;
originally announced February 2001.
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Onset of sliding friction in incommensurate systems
Authors:
L. Consoli,
H. J. F. Knops,
A. Fasolino
Abstract:
We study the dynamics of an incommensurate chain sliding on a periodic lattice, modeled by the Frenkel Kontorova hamiltonian with initial kinetic energy, without dam** and driving terms. We show that the onset of friction at all velocities is due to a novel kind of dissipative parametric resonances, involving several resonant phonons which are driven by the (dissipationless) coupling of the ce…
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We study the dynamics of an incommensurate chain sliding on a periodic lattice, modeled by the Frenkel Kontorova hamiltonian with initial kinetic energy, without dam** and driving terms. We show that the onset of friction at all velocities is due to a novel kind of dissipative parametric resonances, involving several resonant phonons which are driven by the (dissipationless) coupling of the center of mass motion to the phonons with wavevector related to the modulating potential. We establish quantitative estimates for their existence in finite systems and point out the analogy with the induction phenomenon in Fermi-Ulam-Pasta lattices.
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Submitted 24 February, 2000; v1 submitted 1 February, 2000;
originally announced February 2000.
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Berry phase and adiabaticity of a spin diffusing in a non-uniform magnetic field
Authors:
S. A. van Langen,
H. P. A. Knops,
J. C. J. Paasschens,
C. W. J. Beenakker
Abstract:
An electron spin moving adiabatically in a strong, spatially non-uniform magnetic field accumulates a geometric phase or Berry phase, which might be observable as a conductance oscillation in a mesoscopic ring. Two contradicting theories exist for how strong the magnetic field should be to ensure adiabaticity if the motion is diffusive. To resolve this controversy, we study the effect of a non-u…
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An electron spin moving adiabatically in a strong, spatially non-uniform magnetic field accumulates a geometric phase or Berry phase, which might be observable as a conductance oscillation in a mesoscopic ring. Two contradicting theories exist for how strong the magnetic field should be to ensure adiabaticity if the motion is diffusive. To resolve this controversy, we study the effect of a non-uniform magnetic field on the spin polarization and on the weak-localization effect. The diffusion equation for the Cooperon is solved exactly. Adiabaticity requires that the spin-precession time is short compared to the elastic scattering time - it is not sufficient that it is short compared to the diffusion time around the ring. This strong condition severely complicates the experimental observation.
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Submitted 13 March, 1998;
originally announced March 1998.
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Novel Monte Carlo method to calculate the central charge and critical exponents
Authors:
Paul J. M. Bastiaansen,
Hubert J. F. Knops
Abstract:
A typical problem with Monte Carlo simulations in statistical physics is that they do not allow for a direct calculation of the free energy. For systems at criticality, this means that one cannot calculate the central charge in a Monte Carlo simulation. We present a novel finite size scaling technique for two-dimensional systems on a geometry of LxM, and focus on the scaling behavior in M/L. We…
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A typical problem with Monte Carlo simulations in statistical physics is that they do not allow for a direct calculation of the free energy. For systems at criticality, this means that one cannot calculate the central charge in a Monte Carlo simulation. We present a novel finite size scaling technique for two-dimensional systems on a geometry of LxM, and focus on the scaling behavior in M/L. We show that the finite size scaling behavior of the stress tensor, the operator that governs the anisotropy of the system, allows for a determination of the central charge and critical exponents. The expectation value of the stress tensor can be calculated using Monte Carlo simulations. Unexpectedly, it turns out that the stress tensor is remarkably insensitive for critical slowing down, rendering it an easy quantity to simulate. We test the method for the Ising model (with central charge c=1/2), the Ashkin-Teller model (c=1), and the F-model (also c=1).
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Submitted 10 October, 1997;
originally announced October 1997.
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Percolation mechanism for Colossal Magnetoresistance
Authors:
Paul J. M. Bastiaansen,
Hubert J. F. Knops
Abstract:
We argue that colossal magnetoresistance is a critical phenomenon and propose a mechanism to describe it. The mechanism relies on the halfmetallic behavior of the materials showing colossal magnetoresistance, and yields a correlated percolation model that, we argue, captures all qualitative features of colossal magnetoresistance, above as well as below the Curie temperature. The model only serve…
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We argue that colossal magnetoresistance is a critical phenomenon and propose a mechanism to describe it. The mechanism relies on the halfmetallic behavior of the materials showing colossal magnetoresistance, and yields a correlated percolation model that, we argue, captures all qualitative features of colossal magnetoresistance, above as well as below the Curie temperature. The model only serves for revealing the underlying mechanism of colossal magnetoresistance, and does not aim to reproduce precise, numerical results.
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Submitted 22 October, 1996;
originally announced October 1996.
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Correlated percolation and the correlated resistor network
Authors:
Paul J. M. Bastiaansen,
Hubert J. F. Knops
Abstract:
We present some exact results on percolation properties of the Ising model, when the range of the percolating bonds is larger than nearest-neighbors. We show that for a percolation range to next-nearest neighbors the percolation threshold Tp is still equal to the Ising critical temperature Tc, and present the phase diagram for this type of percolation. In addition, we present Monte Carlo calcula…
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We present some exact results on percolation properties of the Ising model, when the range of the percolating bonds is larger than nearest-neighbors. We show that for a percolation range to next-nearest neighbors the percolation threshold Tp is still equal to the Ising critical temperature Tc, and present the phase diagram for this type of percolation. In addition, we present Monte Carlo calculations of the finite size behavior of the correlated resistor network defined on the Ising model. The thermal exponent t of the conductivity that follows from it is found to be t = 0.2000 +- 0.0007. We observe no corrections to scaling in its finite size behavior.
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Submitted 10 October, 1996;
originally announced October 1996.
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Is surface melting a surface phase transition?
Authors:
Paul J. M. Bastiaansen,
Hubert J. F. Knops
Abstract:
Monte Carlo or Molecular Dynamics calculations of surfaces of Lennard-Jones systems often indicate, apart from a gradual disordering of the surface called surface melting, the presence of a phase transition at the surface, but cannot determine the nature of the transition. In the present paper, we provide for a link between the continuous Lennard-Jones system and a lattice model. We apply the me…
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Monte Carlo or Molecular Dynamics calculations of surfaces of Lennard-Jones systems often indicate, apart from a gradual disordering of the surface called surface melting, the presence of a phase transition at the surface, but cannot determine the nature of the transition. In the present paper, we provide for a link between the continuous Lennard-Jones system and a lattice model. We apply the method for the (001) surface of a Lennard-Jones fcc structure pertaining to Argon. The corresponding lattice model is a Body Centered Solid on Solid model with an extended range of interaction, showing in principle rough, flat and disordered flat phases. We observe that entropy effects considerably lower the strength of the effective couplings between the atoms. The Argon (001) face is shown to exhibit a phase transition at T=70.5 +- 0.5 K, and we identify this transition as roughening. The roughening temperature is in good correspondence with experimental results for Argon.
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Submitted 19 October, 1995;
originally announced October 1995.
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Roughening and preroughening in the six vertex model with an extended range of interaction
Authors:
Paul J. M. Bastiaansen,
Hubert J. F. Knops
Abstract:
We study the phase diagram of the BCSOS model with an extended interaction range using transfer matrix techniques, pertaining to the (100) surface of single component fcc and bcc crystals. The model shows a 2x2 reconstructed phase and a disordered flat phase. The deconstruction transition between these phases merges with a Kosterlitz-Thouless line, showing an interplay of Ising and Gaussian degr…
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We study the phase diagram of the BCSOS model with an extended interaction range using transfer matrix techniques, pertaining to the (100) surface of single component fcc and bcc crystals. The model shows a 2x2 reconstructed phase and a disordered flat phase. The deconstruction transition between these phases merges with a Kosterlitz-Thouless line, showing an interplay of Ising and Gaussian degrees of freedom. As in studies of the fully frustrated XY model, exponents deviating from Ising are found. We conjecture that tri-critical Ising behavior may be a possible explanation for the non-Ising exponents found in those models.
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Submitted 10 July, 1995; v1 submitted 6 July, 1995;
originally announced July 1995.