Composite antiferromagnetic and orbital order with altermagnetic properties at a cuprate/manganite interface
Authors:
Subhrangsu Sarkar,
Roxana Capu,
Yurii G. Pashkevich,
Jonas Knobel,
Marli R. Cantarino,
Abhishek Nag,
Kurt Kummer,
Davide Betto,
Roberto Sant,
Christopher W. Nicholson,
Jarji Khmaladze,
Ke-**. Zhou,
Nicholas B. Brookes,
Claude Monney,
Christian Bernhard
Abstract:
Heterostructures from complex oxides allow one to combine various electronic and magnetic orders as to induce new quantum states. A prominent example is the coupling between superconducting and magnetic orders in multilayers from high-Tc cuprates and manganites. A key role is played here by the interfacial CuO2 layer whose distinct properties remain to be fully understood. Here, we study with reso…
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Heterostructures from complex oxides allow one to combine various electronic and magnetic orders as to induce new quantum states. A prominent example is the coupling between superconducting and magnetic orders in multilayers from high-Tc cuprates and manganites. A key role is played here by the interfacial CuO2 layer whose distinct properties remain to be fully understood. Here, we study with resonant inelastic X-ray scattering (RIXS) the magnon excitations of this interfacial CuO2 layer. In particular, we show that the underlying antiferromagnetic exchange interaction at the interface is strongly suppressed to J ~ 70 meV, as compared to J ~ 130 meV for the CuO2 layers away from the interface. Moreover, we observe an anomalous momentum dependence of the intensity of the interfacial magnon mode and show that it suggests that the antiferromagnetic order is accompanied by a particular kind of orbital order that yields a so-called altermagnetic state. Such a two-dimensional altermagnet has recently been predicted to enable new spintronic applications and superconducting proximity effects.
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Submitted 30 April, 2024;
originally announced April 2024.
Molecular beam epitaxy of the half-Heusler antiferromagnet CuMnSb
Authors:
Lukas Scheffler,
Katarzyna Gas,
Sanjib Banik,
Martin Kamp,
Jonas Knobel,
Haicheng Lin,
Claus Schumacher,
Charles Gould,
Maciej Sawicki,
Johannes Kleinlein,
Laurens W. Molenkamp
Abstract:
We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electric…
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We report growth of CuMnSb thin films by molecular beam epitaxy on InAs(001) substrates. The CuMnSb layers are compressively strained ($0.6~\text{%}$) due to lattice mismatch. The thin films have a $ω$ full width half max of $7.7^{''}$ according to high resolution X-ray diffraction, and a root mean square roughness of $0.14~\text{nm}$ as determined by atomic force microscopy. Magnetic and electrical properties are found to be consistent with reported values from bulk samples. We find a Néel temperature of $62~\text{K}$, a Curie-Weiss temperature of $-65~\text{K}$ and an effective moment of $5.9~μ_{\text{B}}/\text{f.u.}$. Transport measurements confirm the antiferromagetic transition and show a residual resistivity at $4~\text{K}$ of $35~μΩ\cdot \text{cm}$.
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Submitted 1 September, 2020;
originally announced September 2020.
