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Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells
Authors:
A. Foertig,
J. Kniepert,
M. Gluecker,
T. Brenner,
V. Dyakonov,
D. Neher,
C. Deibel
Abstract:
A combination of transient photovoltage (TPV), voltage dependent charge extraction (CE) and time delayed collection field (TDCF) measurements is applied to poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl] [3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]] (PTB7):[6,6]-phenyl-C71-butyric acid (PC$_{71}$BM) bulk heterojunction solar cells to analyze the limitat…
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A combination of transient photovoltage (TPV), voltage dependent charge extraction (CE) and time delayed collection field (TDCF) measurements is applied to poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl] [3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]] (PTB7):[6,6]-phenyl-C71-butyric acid (PC$_{71}$BM) bulk heterojunction solar cells to analyze the limitations of photovoltaic performance. Devices are processed from pure chlorobenzene (CB) solution and a subset was optimized with 1,8-diiodooctane (DIO) as co-solvent. The dramatic changes in device performance are discussed with respect to the dominating loss processes. While in the devices processed from CB solution, severe geminate and nongeminate recombination is observed, the use of DIO facilitates efficient polaron pair dissociation and minimizes geminate recombination. Thus, from the determined charge carrier decay rate under open circuit conditions and the voltage dependent charge carrier densities $n(V)$, the nongeminate loss current $j_{loss}$ of the samples with DIO alone enables us to reconstruct the current/voltage ($j/V$) characteristics across the whole operational voltage range. Geminate and nongeminate losses are considered to describe the $j/V$ response of cells prepared without additive, but lead to a clearly overestimated device performance. We attribute the deviation between measured and reconstructed $j/V$ characteristics to trapped charges in isolated domains of pure fullerene phases.
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Submitted 18 June, 2021;
originally announced June 2021.
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Zinc Oxide Modified with Benzylphosphonic Acids as Transparent Electrodes in Regular and Inverted Organic Solar Cell Structures
Authors:
Ilja Lange,
Sina Reiter,
Juliane Kniepert,
Fortunato Piersimoni,
Michael Paetzel,
Jana Hildebrandt,
Thomas Brenner,
Stefan Hecht,
Dieter Neher
Abstract:
An approach is presented to modify the WF of solution-processed sol-gel derived ZnOover an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on phosphonic acids with different dipole moments. This allows us to apply ZnO as charge selective bottom electrodes in either regular or inverted solar cell structures…
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An approach is presented to modify the WF of solution-processed sol-gel derived ZnOover an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on phosphonic acids with different dipole moments. This allows us to apply ZnO as charge selective bottom electrodes in either regular or inverted solar cell structures, using P3HT:PCBM as the active layer. These devices compete with or even exceed the performance of the reference cell on ITO/PEDOT:PSS. Our finding challenges the current view that bottom electrodes in inverted solar cells need to be electron-blocking for good device performance.
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Submitted 5 February, 2015;
originally announced February 2015.
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Room-temperature implementation of the Deutsch-Jozsa algorithm with a single electronic spin in diamond
Authors:
Fazhan Shi,
Xing Rong,
Nanyang Xu,
Ya Wang,
Jie Wu,
Bo Chong,
Xinhua Peng,
Juliane Kniepert,
Rolf-Simon Schoenfeld,
Wolfgang Harneit,
Mang Feng,
Jiangfeng Du
Abstract:
The nitrogen-vacancy defect center (NV center) is a promising candidate for quantum information processing due to the possibility of coherent manipulation of individual spins in the absence of the cryogenic requirement. We report a room-temperature implementation of the Deutsch-Jozsa algorithm by encoding both a qubit and an auxiliary state in the electron spin of a single NV center. By thus exp…
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The nitrogen-vacancy defect center (NV center) is a promising candidate for quantum information processing due to the possibility of coherent manipulation of individual spins in the absence of the cryogenic requirement. We report a room-temperature implementation of the Deutsch-Jozsa algorithm by encoding both a qubit and an auxiliary state in the electron spin of a single NV center. By thus exploiting the specific S=1 character of the spin system, we demonstrate how even scarce quantum resources can be used for test-bed experiments on the way towards a large-scale quantum computing architecture.
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Submitted 11 February, 2010;
originally announced February 2010.
