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Latched readout for the quantum dot hybrid qubit
Authors:
J. Corrigan,
J. P. Dodson,
Brandur Thorgrimsson,
Samuel F. Neyens,
T. J. Knapp,
Thomas McJunkin,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a m…
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A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a metastable charge configuration whose lifetime is tunnel rate limited, persisting here as long as 2.5 ms. Additionally, we show that working in the (4,1)-(3,2) charge configuration enables a latched readout window that is larger and more tunable than typical charge configurations, because the size of the readout window is determined by an orbital splitting rather than a valley splitting.
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Submitted 15 October, 2022;
originally announced October 2022.
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Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
Authors:
J. Corrigan,
J. P. Dodson,
H. Ekmel Ercan,
J. C. Abadillo-Uriel,
Brandur Thorgrimsson,
T. J. Knapp,
Nathan Holman,
Thomas McJunkin,
Samuel F. Neyens,
E. R. MacQuarrie,
Ryan H. Foote,
L. F. Edge,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum do…
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Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics.
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Submitted 28 September, 2020;
originally announced September 2020.
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The critical role of substrate disorder in valley splitting in Si quantum wells
Authors:
Samuel F. Neyens,
Ryan H. Foote,
Brandur Thorgrimsson,
T. J. Knapp,
Thomas McJunkin,
L. M. K. Vandersypen,
Payam Amin,
Nicole K. Thomas,
James S. Clarke,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum we…
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Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum wells with approximately five monolayers of pure Ge at the upper barrier, finding mobilities as high as 70,000 cm$^2$/Vs, compared to 100,000 cm$^2$/Vs measured in samples with no Ge layer. Activation energy measurements in quantum Hall states corresponding to Fermi levels in the gap between different valley states reveal energy gaps ranging from 30 to over 200 $μ$eV, and we extract a surprisingly strong dependence of the energy gap on electron density. We interpret our results using tight binding theory and argue that our results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings of these modified heterostructures.
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Submitted 15 June, 2018; v1 submitted 5 April, 2018;
originally announced April 2018.
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Is the Young Star RZ Piscium Consuming Its Own (Planetary) Offspring?
Authors:
K. M. Punzi,
J. H. Kastner,
C. Melis,
B. Zuckerman,
C. Pilachowski,
L. Gingerich,
T. Knapp
Abstract:
The erratically variable star RZ Piscium (RZ Psc) displays extreme optical dropout events and strikingly large excess infrared emission. To ascertain the evolutionary status of this intriguing star, we obtained observations of RZ Psc with the European Space Agency's X-ray Multi-Mirror Mission (XMM-Newton), as well as high-resolution optical spectroscopy with the Hamilton Echelle on the Lick Shane…
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The erratically variable star RZ Piscium (RZ Psc) displays extreme optical dropout events and strikingly large excess infrared emission. To ascertain the evolutionary status of this intriguing star, we obtained observations of RZ Psc with the European Space Agency's X-ray Multi-Mirror Mission (XMM-Newton), as well as high-resolution optical spectroscopy with the Hamilton Echelle on the Lick Shane 3 m telescope and with HIRES on the Keck I 10 m telescope. The optical spectroscopy data demonstrate that RZ Psc is a pre-main sequence star with an effective temperature of 5600 $\pm$ 75 K and log g of 4.35 $\pm$ 0.10. The ratio of X-ray to bolometric luminosity, log L$_{X}$/L$_{bol}$, lies in the range -3.7 to -3.2, consistent with ratios typical of young, solar-mass stars, thereby providing strong support for the young star status of RZ Psc. The Li absorption line strength of RZ Psc suggests an age in the range 30-50 Myr, which in turn implies that RZ Psc lies at a distance of $\sim$170 pc. Adopting this estimated distance, we find the Galactic space velocity of RZ Psc to be similar to the space velocities of stars in young moving groups near the Sun. Optical spectral features indicative of activity and/or circumstellar material are present in our spectra over multiple epochs, which provide evidence for the presence of a significant mass of circumstellar gas associated with RZ Psc. We suggest that the destruction of one or more massive orbiting bodies has recently occurred within 1 au of the star, and we are viewing the aftermath of such an event along the plane of the orbiting debris.
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Submitted 24 December, 2017;
originally announced December 2017.
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Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane
Authors:
T. J. Knapp,
R. T. Mohr,
Yize Stephanie Li,
Brandur Thorgrimsson,
Ryan H. Foote,
Xian Wu,
Daniel R. Ward,
D. E. Savage,
M. G. Lagally,
Mark Friesen,
S. N. Coppersmith,
M. A. Eriksson
Abstract:
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, m…
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We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field.
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Submitted 29 October, 2015;
originally announced October 2015.
