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Annealing of swift heavy ion tracks in amorphous silicon dioxide
Authors:
Shankar Dutt,
Christian Notthoff,
Xue Wang,
Christina Trautmann,
Pablo Mota-Santiago,
Patrick Kluth
Abstract:
The annealing kinetics of the high energy ion damage in amorphous silicon dioxide (a-SiO2) are still not well understood, despite the material's widespread application in material science, physics, geology, and biology. This study investigates how annealing temperature, duration, and ambient environment affect the recovery of irradiation damage produced along the trajectory of swift heavy ions in…
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The annealing kinetics of the high energy ion damage in amorphous silicon dioxide (a-SiO2) are still not well understood, despite the material's widespread application in material science, physics, geology, and biology. This study investigates how annealing temperature, duration, and ambient environment affect the recovery of irradiation damage produced along the trajectory of swift heavy ions in a-SiO2. The track-annealing kinetics and the changing ion track morphology were investigated using synchrotron-based small-angle X-ray scattering (SAXS) and etching methods. We found that track annealing proceeds quicker near the sample surface demonstrated by a changing track etch rate as a function of depth. Measurements of ion tracks using SAXS show only small changes in the radial density distribution profile of the ion tracks. Activation energy of the annealing process at different sample depths was determined and the effect of the cap** layer during the annealing process was also studied. Combination of oxygen diffusion and stress relaxation may contribute to the observed behaviour of preferential and anisotropic healing of the ion track. The results add to the fundamental understanding of ion track damage recovery and may have direct implications for materials for radioactive waste storage and solid state nanopores.
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Submitted 22 April, 2023; v1 submitted 17 April, 2023;
originally announced April 2023.
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High Accuracy Protein Identification: Fusion of solid-state nanopore sensing and machine learning
Authors:
Shankar Dutt,
Hancheng Shao,
Buddini Karawdeniya,
Y. M. Nuwan D. Y. Bandara,
Elena Daskalaki,
Hanna Suominen,
Patrick Kluth
Abstract:
Proteins are arguably the most important class of biomarkers for health diagnostic purposes. Label-free solid-state nanopore sensing is a versatile technique for sensing and analysing biomolecules such as proteins at single-molecule level. While molecular-level information on size, shape, and charge of proteins can be assessed by nanopores, the identification of proteins with comparable sizes rema…
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Proteins are arguably the most important class of biomarkers for health diagnostic purposes. Label-free solid-state nanopore sensing is a versatile technique for sensing and analysing biomolecules such as proteins at single-molecule level. While molecular-level information on size, shape, and charge of proteins can be assessed by nanopores, the identification of proteins with comparable sizes remains a challenge. Here, we present methods that combine solid-state nanopore sensing with machine learning to address this challenge. We assess the translocations of four similarly sized proteins using amplifiers with bandwidths (BWs) of 100 kHz (sampling rate=200 ksps) and 10 MHz (sampling rate=40 Msps), the highest bandwidth reported for protein sensing, using nanopores fabricated in <10 nm thick silicon nitride membranes. F-values of up to 65.9% and 83.2% (without clustering of the protein signals) were achieved with 100 kHz and 10 MHz BW instruments, respectively, for identification of the four proteins. The accuracy of protein identification was significantly improved by grou** the signals into several clusters depending on the event features, resulting in F-value and specificity reaching as high as 88.7% and 96.4%, respectively, for combinations of four proteins. The combined improvement in sensor signals through the use of high bandwidth instruments, advanced clustering, machine learning, and other advanced data analysis methods allows identification of proteins with high accuracy.
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Submitted 8 September, 2023; v1 submitted 23 February, 2023;
originally announced February 2023.
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Highly Rectifying Conical Nanopores in Amorphous SiO2 Membranes for Nanofluidic Osmotic Power Generation and Electroosmotic Pumps
Authors:
Alexander Kiy,
Shankar Dutt,
Christian Notthoff,
Maria E. Toimil-Molares,
Nigel Kirby,
Patrick Kluth
Abstract:
Nanopore membranes are a versatile platform for a wide range of applications ranging from medical sensing to filtration and clean energy generation. To attain high-flux rectifying ionic flow, it is required to produce short channels exhibiting asymmetric surface charge distributions. This work reports on a system of track etched conical nanopores in amorphous SiO$_2$ membranes, fabricated using th…
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Nanopore membranes are a versatile platform for a wide range of applications ranging from medical sensing to filtration and clean energy generation. To attain high-flux rectifying ionic flow, it is required to produce short channels exhibiting asymmetric surface charge distributions. This work reports on a system of track etched conical nanopores in amorphous SiO$_2$ membranes, fabricated using the scalable track etch technique. Pores are fabricated by irradiation of 1 $μ$m thick SiO$_2$ windows with 2.2 GeV $^{197}$Au ions and subsequent chemical etching. Structural characterisation is performed using atomic force microscopy (AFM), scanning electron microscopy (SEM), small angle X-ray scattering (SAXS), ellipsometry, and surface profiling. Conductometric characterisation of the pore surface is performed using a membrane containing 16 pores, including an in-depth analysis of ionic transport characteristics. The pores have a tip radius of (5.7 $\pm$ 0.1) nm, a half-cone angle of (12.6 $\pm$ 0.1)$^{\circ}$, and a length of (710 $\pm$ 5) nm. The $pK_a$, $pK_b$, and $pI$ are determined to 7.6 $\pm$ 0.1, 1.5 $\pm$ 0.2, and 4.5 $\pm$ 0.1, respectively, enabling the fine-tuning of the surface charge density between +100 and -300 mC $m^{-2}$ and allowing to achieve an ionic current rectification ratio of up to 10. This highly versatile technology addresses challenges that contemporary nanopore systems face, and offers a platform to improve the performance of existing applications.
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Submitted 4 May, 2023; v1 submitted 2 February, 2023;
originally announced February 2023.
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Ultra-Thin, High-Lifetime Silicon Nitride Membranes for Nanopore Sensing
Authors:
Shankar Dutt,
Buddini I. Karawdeniya,
Y. M. Nuwan D. Y. Bandara,
Nahid Afrin,
Patrick Kluth
Abstract:
Thin membranes are highly sought-after for nanopore-based single-molecule sensing and fabrication of such membranes becomes challenging in the \lesssim10 nm thickness regime where a plethora of useful molecule information can be acquired by nanopore sensing. In this work, we present a scalable and controllable method to fabricate silicon nitride (SixNy) membranes with effective thickness down to ~…
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Thin membranes are highly sought-after for nanopore-based single-molecule sensing and fabrication of such membranes becomes challenging in the \lesssim10 nm thickness regime where a plethora of useful molecule information can be acquired by nanopore sensing. In this work, we present a scalable and controllable method to fabricate silicon nitride (SixNy) membranes with effective thickness down to ~1.5 nm using standard silicon processing and chemical etching using hydrofluoric acid (HF). Nanopores were fabricated using the controlled breakdown method with estimated pore diameters down to ~1.8 nm yielding events >500,000 and >1,800,000 from dsDNA and bovine serum albumin (BSA) protein, respectively, demonstrating the high-performance and extended lifetime of the pores fabricated through our membranes. We used two different compositions of SixNy for membrane fabrication (near stoichiometric and silicon-rich SixNy) and compared them against commercial membranes. The final thicknesses of the membranes were measured using ellipsometry and were in good agreement with the values calculated from the bulk etch rates and DNA translocation characteristics. The stoichiometry and the density of the membrane layers were characterized with Rutherford backscattering spectrometry while the nanopores were characterized using pH-conductance, conductivity-conductance and power spectral density (PSD) graphs.
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Submitted 20 February, 2023; v1 submitted 22 January, 2022;
originally announced January 2022.
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Influence of direct deposition of dielectric materials on the optical response of monolayer WS$_2$
Authors:
Tinghe Yun,
Matthias Wurdack,
Maciej Pieczarka,
Semonti Bhattacharyya,
Qingdong Ou,
Christian Notthoff,
Patrick Kluth,
Michael S. Fuhrer,
Andrew G. Truscott,
Eliezer Estrecho,
Elena A. Ostrovskaya
Abstract:
The integration of two-dimensional transition metal dichalcogenide crystals (TMDCs) into a dielectric environment is critical for optoelectronic and photonic device applications. Here, we investigate the effects of direct deposition of different dielectric materials (Al$_2$O$_3$, SiO$_2$, SiN$_x$) onto atomically thin (monolayer) TMDC WS$_2$ on its optical response. Atomic layer deposition (ALD),…
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The integration of two-dimensional transition metal dichalcogenide crystals (TMDCs) into a dielectric environment is critical for optoelectronic and photonic device applications. Here, we investigate the effects of direct deposition of different dielectric materials (Al$_2$O$_3$, SiO$_2$, SiN$_x$) onto atomically thin (monolayer) TMDC WS$_2$ on its optical response. Atomic layer deposition (ALD), electron beam evaporation (EBE), plasma enhanced chemical vapour deposition (PECVD), and magnetron sputtering methods of material deposition are investigated. The photoluminescence (PL) measurements reveal quenching of the excitonic emission after all deposition processes. The reduction in neutral exciton PL is linked to the increased level of charge do** and associated rise of the trion emission, and/or the localized (bound) exciton emission. Furthermore, Raman spectroscopy allows us to clearly correlate the observed changes of excitonic emission with the increased levels of lattice disorder and defects. Overall, the EBE process results in the lowest level of do** and defect densities and preserves the spectral weight of the exciton emission in the PL, as well as the exciton oscillator strength. Encapsulation with ALD appears to cause chemical changes, which makes it distinct from all other techniques. Sputtering is revealed as the most aggressive deposition method for WS$_2$, fully quenching its optical response. Our results demonstrate and quantify the effects of direct deposition of dielectric materials onto monolayer WS$_2$, which can provide a valuable guidance for the efforts to integrate monolayer TMDCs into functional optoelectronic devices.
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Submitted 20 April, 2021;
originally announced April 2021.
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Analysis of nanometre sized aligned conical pores using SAXS
Authors:
A. Hadley,
C. Notthoff,
P. Mota-Santiago,
S. Dutt,
S. Mudie,
M. A. Carrillo-Solano,
M. E. Toimil-Molares,
C. Trautmann,
P. Kluth
Abstract:
Small angle X-ray scattering (SAXS) was used to quantitatively study the morphology of aligned, mono-disperse conical etched ion tracks in thin films of amorphous silicon dioxide with aspect ratios of around 6:1, and in polycarbonate foils with aspect ratios of around 1000:1. This paper presents the measurement procedure and methods developed for the analysis of the scattering images and shows res…
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Small angle X-ray scattering (SAXS) was used to quantitatively study the morphology of aligned, mono-disperse conical etched ion tracks in thin films of amorphous silicon dioxide with aspect ratios of around 6:1, and in polycarbonate foils with aspect ratios of around 1000:1. This paper presents the measurement procedure and methods developed for the analysis of the scattering images and shows results obtained for the two material systems. To enable accurate parameter extraction from the data collected from conical scattering objects a model fitting the 2-D detector images was developed. The analysis involved fitting images from a sequence of measurements with different sample tilts to minimise errors which may have been introduced due to the experimental set-up. The model was validated by the exploitation of the geometric relationship between the sample tilt angle and the cone opening angle, to an angle observed in the features of the SAXS images. We also demonstrate that a fitting procedure for 1-D data extracted from the scattering images using a hard cylinder model can also be used to extract the cone size. The application of these techniques enables us to reconstruct the cone morphologies with unprecedented precision.
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Submitted 4 July, 2020; v1 submitted 23 September, 2019;
originally announced September 2019.
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Swift heavy ion irradiation of GaSb: from ion tracks to nano-porous networks
Authors:
C. Notthoff,
S. Jordan,
A. Hadley,
P. Mota-Santiago,
R. G. Elliman,
W. Lei,
N. Kirby,
P. Kluth
Abstract:
Ion track formation, amorphisation, and the formation of porosity in crystalline GaSb induced by 185 MeV $^{197}$Au swift heavy ion irradiation is investigated as a function of fluence and irradiation angle relative to the surface normal. RBS/C and SAXS reveal an ion track radius between 3 nm and 5 nm. The observed pore morphology and saturation swelling of GaSb films shows a strong irradiation an…
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Ion track formation, amorphisation, and the formation of porosity in crystalline GaSb induced by 185 MeV $^{197}$Au swift heavy ion irradiation is investigated as a function of fluence and irradiation angle relative to the surface normal. RBS/C and SAXS reveal an ion track radius between 3 nm and 5 nm. The observed pore morphology and saturation swelling of GaSb films shows a strong irradiation angle dependence. Raman spectroscopy and scanning electron microscopy show that the ion tracks act as a source of strain in the material leading to macroscopic plastic flow at high fluences and off normal irradiation. The results are consistent with the ion hammering model for glasses. Furthermore, wide angle X-ray scattering reveals the formation of nano crystallites inside otherwise amorphous GaSb after the onset of porosity.
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Submitted 8 May, 2020; v1 submitted 2 September, 2019;
originally announced September 2019.
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Proceedings of the 35th Annual Australian/New Zealand Condensed Matter and Materials Meeting
Authors:
K. Radhanpura,
S. Hargreaves,
R. A. Lewis,
H. Krüger,
E. Rey,
P. -Z. Si,
T. Söhnel,
V. Jovic,
J. B. Metson,
G. I. N. Waterhouse,
A. A. Abiona,
W. J. Kemp,
A. P. Byrne,
M. C. Ridgeway,
H. Timmers,
J. D. Cashion,
W. P. Gates,
T. L. Greaves,
O. Dorjkhaidav,
E. Constable,
L. G. Gladkis,
J. M. Scarvell,
P. N. Smith,
C. J. Hamer,
O. Rojas
, et al. (20 additional authors not shown)
Abstract:
The 35th Australian/New Zealand Annual Condensed Matter and Materials Meeting was held at the Charles Sturt University campus in Wagga Wagga, NSW, Australia from the 1st to the 4th of February 2011. The conference was attended by 92 delegates from a range of universities across Australia, New Zealand and further afield.
There were a total of 9 invited and 21 contributed talks during the three da…
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The 35th Australian/New Zealand Annual Condensed Matter and Materials Meeting was held at the Charles Sturt University campus in Wagga Wagga, NSW, Australia from the 1st to the 4th of February 2011. The conference was attended by 92 delegates from a range of universities across Australia, New Zealand and further afield.
There were a total of 9 invited and 21 contributed talks during the three days of scientific sessions, as well as 2 poster sessions with a total of 49 poster presentations. All presenters were invited to submit a manuscript for publication in the conference proceedings. The length limits where six pages for invited papers and four pages for contributed papers. Each manuscript was reviewed by two anonymous referees and 18 papers were accepted for publication.
The accepted manuscripts are also available at the online publication section of the Australian Institute of Physics national web site (http://www.aip.org.au/).
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Submitted 18 July, 2011;
originally announced July 2011.
