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Laser-controlled field effect in graphene/hexagonal boron nitride heterostructures
Authors:
Igor Wlasny,
Roman Stepniewski,
Zbigniew Klusek,
Wlodzimierz Strupinski,
Andrzej Wysmolek
Abstract:
The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser light induced modifications are found to cause no structural changes. However, they have impact on Raman spectra and local charge state of the material. They ar…
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The possibility of modification of the local properties of hexagonal boron nitride (h-BN) by laser irradiation is investigated. Investigations conducted using both Raman spectroscopy and electrostatic force microscopy were performed. Laser light induced modifications are found to cause no structural changes. However, they have impact on Raman spectra and local charge state of the material. They are also shown to be stable in time and during electrical grounding of the sample. The mechanism of photoionization of deep defects present in h-BN is proposed to explain the observed phenomenon. The discussed effect opens up new method of nanostructurization of h-BN based planar heterostructures.
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Submitted 16 May, 2018; v1 submitted 1 March, 2018;
originally announced March 2018.
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Domains of do** in graphene on polycrystalline gold: first-principles and scanning tunneling spectroscopy studies
Authors:
J. Slawinska,
I. Wlasny,
P. Dabrowski,
Z. Klusek,
I. Zasada
Abstract:
We have studied the graphene/gold interface by means of density functional theory (DFT) and scanning tunneling spectroscopy (STS). Weak interaction between graphene and the underlying gold surface leaves unperturbed Dirac cones in the band-structure, but they can be shifted with respect to the Fermi level of the whole system, which results in effective do** of graphene. DFT calculations revealed…
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We have studied the graphene/gold interface by means of density functional theory (DFT) and scanning tunneling spectroscopy (STS). Weak interaction between graphene and the underlying gold surface leaves unperturbed Dirac cones in the band-structure, but they can be shifted with respect to the Fermi level of the whole system, which results in effective do** of graphene. DFT calculations revealed that the interface is extremely sensitive to the adsorption distance and to the structure of metal's surface, in particular strong variation in do** can be attributed to the specific rearrangements of substrate's atoms, such as the change in the crystallographic orientation, relaxation or other modifications of the surface. On the other hand, STS experiments have shown the presence of energetic heterogeneity in terms of the changes in the local density of states (LDOS) measured at different places on the sample. Randomly repeated regions of zero-do** and p-type do** have been identified from parabolic shape characteristics and from well defined Dirac points, respectively. The do** domains of graphene on gold seem to be related to the presence of various types of the surface structure across the sample. DFT simulations for graphene interacting with Au have shown large differences in do** induced by considered structures of substrate, in agreement with experimental findings. All these results demonstrate the possibility of engineering the electronic properties of graphene, especially tuning the do** across one flake which can be useful for applications of graphene in electronic devices.
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Submitted 25 January, 2012;
originally announced January 2012.
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Optical contrast of single- and multi-layer graphene deposited on a gold substrate
Authors:
Igor Wlasny,
Pawel Dabrowski,
Zbigniew Klusek
Abstract:
We study the optical contrast for single and multilayer graphene deposited on a Au/SiO2/Si substrate. Our results prove that optical microscopy allows for easy and quick localization, identification and counting of graphene layers. Visibility depends on the thicknesses of the Au and SiO2 layers as well as the wavelength of the light used. We propose optimum parameters for the detection of graphene…
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We study the optical contrast for single and multilayer graphene deposited on a Au/SiO2/Si substrate. Our results prove that optical microscopy allows for easy and quick localization, identification and counting of graphene layers. Visibility depends on the thicknesses of the Au and SiO2 layers as well as the wavelength of the light used. We propose optimum parameters for the detection of graphene.
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Submitted 6 November, 2012; v1 submitted 24 February, 2011;
originally announced February 2011.
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Comment on "Tunable Band Gaps in Bilayer Graphene-BN Heterostructures"
Authors:
J. Slawinska,
I. Zasada,
P. Kosinski,
Z. Klusek
Abstract:
We study the electronic properties of h-BN/graphene/h-BN ABC-stacked trilayer systems using tight binding and DFT methods. We comment on the recent work of Ramasubramaniam et al. (arxiv:1011.2489) whose results seem to be in disagreement with our recent calculations. Detailed analysis reaffirms our previous conclusions.
We study the electronic properties of h-BN/graphene/h-BN ABC-stacked trilayer systems using tight binding and DFT methods. We comment on the recent work of Ramasubramaniam et al. (arxiv:1011.2489) whose results seem to be in disagreement with our recent calculations. Detailed analysis reaffirms our previous conclusions.
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Submitted 10 December, 2010;
originally announced December 2010.
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Reversible modifications of linear dispersion - graphene between boron nitride monolayers
Authors:
J. Slawinska,
I. Zasada,
P. Kosinski,
Z. Klusek
Abstract:
Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure in the absence of external field the bands are linear in the vicinity of the Dirac points as in the case of single-layer graphene. For certain atomic configurat…
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Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure in the absence of external field the bands are linear in the vicinity of the Dirac points as in the case of single-layer graphene. For certain atomic configuration, the electric field effect allows opening of a band gap of over 230 meV. We believe that this mechanism of energy gap tuning could significantly improve the characteristics of graphene-based field-effect transistors and pave the way for future electronic applications.
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Submitted 9 November, 2010; v1 submitted 19 July, 2010;
originally announced July 2010.
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Energy gap tuning in graphene on hexagonal boron nitride bilayer system
Authors:
J. Slawinska,
I. Zasada,
Z. Klusek
Abstract:
We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the direction perpendicular to the layers significantly modifies the electronic structure of the whole system, including shifts, anticrossing and other deformations of…
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We use a tight binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in the most stable configuration. We show that an electric field applied in the direction perpendicular to the layers significantly modifies the electronic structure of the whole system, including shifts, anticrossing and other deformations of bands, which can allow to control the value of the energy gap. It is shown that band structure of biased system may be tailored for specific requirements of nanoelectronics applications. The carriers' mobilities are expected to be higher than in the bilayer graphene devices.
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Submitted 8 February, 2010;
originally announced February 2010.
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Mono-, bi- and tri- graphene layers deposited on conductive Au/Cr/SiO2/Si substrate studied by scanning tunnelling spectroscopy
Authors:
Z. Klusek,
P. Dabrowski,
P. Kowalczyk,
W. Kozlowski,
P. Blake,
M. Szybowicz,
T. Runka,
W. Olejniczak
Abstract:
Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive Au/Cr/SiO2/Si substrate shows that gold substrate causes the Fermi level shift downwards which means that holes are donated by metal substrate to graphene which…
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Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive Au/Cr/SiO2/Si substrate shows that gold substrate causes the Fermi level shift downwards which means that holes are donated by metal substrate to graphene which becomes p-type doped. These experimental results are in good accordance with recently published density function theory calculations. The estimated positions of the Dirac point show that the higher number of graphene layers the lower Fermi level shift is observed.
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Submitted 31 December, 2008;
originally announced January 2009.
