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Low-Crosstalk, Silicon-Fabricated Optical Waveguides for Laser Delivery to Matter Qubits
Authors:
Clayton L. Craft,
Nicholas J. Barton,
Andrew C. Klug,
Kenneth Scalzi,
Ian Wildemann,
Pramod Asagodu,
Joseph D. Broz,
Nikola L. Porto,
Michael Macalik,
Anthony Rizzo,
Garrett Percevault,
Christopher C. Tison,
A. Matthew Smith,
Michael L. Fanto,
James Schneeloch,
Erin Sheridan,
Dylan Heberle,
Andrew Brownell,
Vijay S. S. Sundaram,
Venkatesh Deenadayalan,
Matthew van Niekerk,
Evan Manfreda-Schulz,
Gregory A. Howland,
Stefan F. Preble,
Daniel Coleman
, et al. (8 additional authors not shown)
Abstract:
Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS foundry-produced, micro-fabricated silicon nitride (Si3N4) optical waveguide for addressing a chain of eight, unequally-spaced trapped barium ions with crosstalk compatib…
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Reliable control of quantum information in matter-based qubits requires precisely applied external fields, and unaccounted for spatial cross-talk of these fields between adjacent qubits leads to loss of fidelity. We report a CMOS foundry-produced, micro-fabricated silicon nitride (Si3N4) optical waveguide for addressing a chain of eight, unequally-spaced trapped barium ions with crosstalk compatible with scalable quantum information processing. The crosstalk mitigation techniques incorporated into the chip design result in a reduction of the measured optical field by at least 50.8(1.3) dB between adjacent waveguide outputs near 650 nm and similar behavior for devices designed for 493 nm and 585 nm. The waveguide outputs near 650 nm, along with a global laser near 493 nm were used to laser-cool a chain of eight barium-138 ions, and a camera imaged the resulting fluorescence at 493 nm.
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Submitted 27 June, 2024; v1 submitted 25 June, 2024;
originally announced June 2024.
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Universal crosstalk of twisted light in random media
Authors:
David Bachmann,
Asher Klug,
Mathieu Isoard,
Vyacheslav Shatokhin,
Giacomo Sorelli,
Andreas Buchleitner,
Andrew Forbes
Abstract:
Structured light offers wider bandwidths and higher security for communication. However, propagation through complex random media, such as the Earth's atmosphere, typically induces intermodal crosstalk. We show numerically and experimentally that coupling of photonic orbital angular momentum (OAM) modes is governed by a universal function of a single parameter -- the ratio between the random mediu…
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Structured light offers wider bandwidths and higher security for communication. However, propagation through complex random media, such as the Earth's atmosphere, typically induces intermodal crosstalk. We show numerically and experimentally that coupling of photonic orbital angular momentum (OAM) modes is governed by a universal function of a single parameter -- the ratio between the random medium's and the beam's transverse correlation lengths, even in the regime of pronounced intensity fluctuations.
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Submitted 7 February, 2024; v1 submitted 24 June, 2022;
originally announced June 2022.
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Robust structured light in atmospheric turbulence
Authors:
Asher Klug,
Cade Peters,
Andrew Forbes
Abstract:
Structured light is routinely used in free space optical communication channels, both classical and quantum, where information is encoded in the spatial structure of the mode for increased bandwidth. Unlike polarisation, the spatial structure of light is perturbed through such channels by atmospheric turbulence, and consequently, much attention has focused on whether one mode type is more robust t…
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Structured light is routinely used in free space optical communication channels, both classical and quantum, where information is encoded in the spatial structure of the mode for increased bandwidth. Unlike polarisation, the spatial structure of light is perturbed through such channels by atmospheric turbulence, and consequently, much attention has focused on whether one mode type is more robust than another, but with seemingly inconclusive and contradictory results. Both real-world and experimentally simulated turbulence conditions have revealed that free-space structured light modes are perturbed in some manner by turbulence, resulting in both amplitude and phase distortions. Here, we present complex forms of structured light which are invariant under propagation through the atmosphere: the true eigenmodes of atmospheric turbulence. We provide a theoretical procedure for obtaining these eigenmodes and confirm their invariance both numerically and experimentally. Although we have demonstrated the approach on atmospheric turbulence, its generality allows it to be extended to other channels too, such as underwater and in optical fibre.
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Submitted 16 May, 2022;
originally announced May 2022.
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Revealing the invariance of vectorial structured light in perturbing media
Authors:
Isaac Nape,
Keshaan Singh,
Asher Klug,
Wagner Buono,
Carmelo Rosales-Guzmán,
Sonja Franke-Arnold,
Angela Dudley,
Andrew Forbes
Abstract:
Optical aberrations have been studied for centuries, placing fundamental limits on the achievable resolution in focusing and imaging. In the context of structured light, the spatial pattern is distorted in amplitude and phase, often arising from optical imperfections, element misalignment, or even from dynamic processes due to propagation through perturbing media such as living tissue, free-space,…
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Optical aberrations have been studied for centuries, placing fundamental limits on the achievable resolution in focusing and imaging. In the context of structured light, the spatial pattern is distorted in amplitude and phase, often arising from optical imperfections, element misalignment, or even from dynamic processes due to propagation through perturbing media such as living tissue, free-space, underwater and optical fibre. Here we show that the polarisation inhomogeneity that defines vectorial structured light is immune to all such perturbations, provided they are unitary. By way of example, we study the robustness of vector vortex beams to tilted lenses and atmospheric turbulence, both highly asymmetric aberrations, demonstrating that the inhomogeneous nature of the polarisation remains unaltered from the near-field to far-field, even as the structure itself changes. The unitary nature of the channel allows us to undo this change through a simple lossless operation, tailoring light that appears robust in all its spatial structure regardless of the medium. Our insight highlights the overlooked role of measurement in describing classical vectorial light fields, in doing so resolving prior contradictory reports on the robustness of vector beams in complex media. This paves the way to the versatile application of vectorial structured light, even through non-ideal optical systems, crucial in applications such as imaging deep into tissue and optical communication across noisy channels.
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Submitted 3 September, 2021; v1 submitted 31 August, 2021;
originally announced August 2021.
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The orbital angular momentum of a turbulent atmosphere and its impact on propagating structured light fields
Authors:
Asher Klug,
Isaac Nape,
Andrew Forbes
Abstract:
When structured light is propagated through the atmosphere, turbulence results in modal scattering and distortions. An extensively studied example is that of light carrying orbital angular momentum (OAM), where the atmosphere is treated as a phase distortion and numerical tools extract the resulting modal cross-talk. This approach focuses on the light itself, perturbed by the atmosphere, yet does…
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When structured light is propagated through the atmosphere, turbulence results in modal scattering and distortions. An extensively studied example is that of light carrying orbital angular momentum (OAM), where the atmosphere is treated as a phase distortion and numerical tools extract the resulting modal cross-talk. This approach focuses on the light itself, perturbed by the atmosphere, yet does not easily lend itself to physical insights, and fails to ask a pertinent question: where did the OAM that the beam gained or lost come from? Here, we address this by forgoing the beam and instead calculating the OAM of the atmosphere itself. With this intuitive model we are able to draw general conclusions on the impact of atmospheric turbulence on OAM beams, which we confirm experimentally. Our work alters the perspective on this problem, opening new insights into the physics of OAM in turbulence, and is easily extended to other structured light fields through arbitrary aberrations.
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Submitted 26 May, 2021;
originally announced May 2021.
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Map** oscillating magnetic fields around rechargeable batteries
Authors:
Stefan Benders,
Mohaddese Mohammadi,
Matthew J. Ganter,
Christopher. A. Klug,
Alexej Jerschow
Abstract:
Power storage devices such as batteries are a crucial part of modern technology. The development and use of batteries has accelerated in the past decades, yet there are only a few techniques that allow gathering vital information from battery cells in a nonivasive fashion. A widely used technique to investigate batteries is electrical impedance spectroscopy (EIS), which provides information on how…
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Power storage devices such as batteries are a crucial part of modern technology. The development and use of batteries has accelerated in the past decades, yet there are only a few techniques that allow gathering vital information from battery cells in a nonivasive fashion. A widely used technique to investigate batteries is electrical impedance spectroscopy (EIS), which provides information on how the impedance of a cell changes as a function of the frequency of applied alternating currents. Building on recent developments of inside-out MRI (ioMRI), a technique is presented here which produces spatially-resolved maps of the oscillating magnetic fields originating from the alternating electrical currents distributed within a cell. The technique works by using an MRI pulse sequence synchronized with a gated alternating current applied to the cell terminals. The approach is benchmarked with a current-carrying wire coil, and demonstrated with commercial and prototype lithium-ion cells. Marked changes in the fields are observed for different cell types.
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Submitted 8 July, 2020;
originally announced July 2020.
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Spatial filtering of structured light
Authors:
Jonathan Pinnell,
Asher Klug,
Andrew Forbes
Abstract:
Spatial filtering is a commonly deployed technique to improve the quality of laser beams by optically filtering the noise. In the "textbook" example, the noise is usually assumed to be high frequency and the laser beam, Gaussian. In this case, the filtering is achieved by a simple pin-hole placed at the common focal plane of two lenses. Here, we explain how to generalize the concept of spatial fil…
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Spatial filtering is a commonly deployed technique to improve the quality of laser beams by optically filtering the noise. In the "textbook" example, the noise is usually assumed to be high frequency and the laser beam, Gaussian. In this case, the filtering is achieved by a simple pin-hole placed at the common focal plane of two lenses. Here, we explain how to generalize the concept of spatial filtering to arbitrary beam profiles: spatial filtering of structured light. We show how to construct the spatial filters using a range of structured light examples, and highlight under what conditions spatial filtering works. In the process, we address some misconceptions in the community as to how and when spatial filters can be applied, extend the concept of spatial filtering to arbitrary beam types and provide a theoretical and experimental framework for further study at both the undergraduate and graduate level.
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Submitted 12 May, 2020;
originally announced May 2020.
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Monotonic and cyclic mechanical reliability of metallization lines on polymer substrates
Authors:
Oleksandr Glushko,
Andreas Klug,
Emil J. W. List-Kratochvil,
Megan J. Cordill
Abstract:
Mechanical stability of Ag and Cu printed and evaporated metallization lines on polymer substrates is investigated by means of monotonic tensile and cyclic bending tests. It is shown that lines which demonstrate good performance during monotonic tests fail at lower strains during a cyclic bending tests. Evaporated lines with the grain size of several hundreds of nanometers have good ductility and…
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Mechanical stability of Ag and Cu printed and evaporated metallization lines on polymer substrates is investigated by means of monotonic tensile and cyclic bending tests. It is shown that lines which demonstrate good performance during monotonic tests fail at lower strains during a cyclic bending tests. Evaporated lines with the grain size of several hundreds of nanometers have good ductility and consequently good stability during monotonic loading but at the same time they fail at low strains during cyclic bending. Printed lines with nanocrystalline microstructure, in contrast, demonstrate more intensive cracking during monotonic loading but higher failure strains during cyclic bending. Apart from the grain size effect, the effect of film thickness on the saturation crack density after cyclic bending is also demonstrated. Thinner films have higher crack density in accordance with the shear lag model.
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Submitted 9 April, 2019;
originally announced April 2019.
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Recombination and mutational robustness in neutral fitness landscapes
Authors:
Alexander Klug,
Su-Chan Park,
Joachim Krug
Abstract:
Mutational robustness quantifies the effect of random mutations on fitness. When mutational robustness is high, most mutations do not change fitness or have only a minor effect on it. From the point of view of fitness landscapes, robust genotypes form neutral networks of almost equal fitness. Using deterministic population models it has been shown that selection favors genotypes inside such networ…
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Mutational robustness quantifies the effect of random mutations on fitness. When mutational robustness is high, most mutations do not change fitness or have only a minor effect on it. From the point of view of fitness landscapes, robust genotypes form neutral networks of almost equal fitness. Using deterministic population models it has been shown that selection favors genotypes inside such networks, which results in increased mutational robustness. Here we demonstrate that this effect is massively enhanced by recombination. Our results are based on a detailed analysis of mesa-shaped fitness landscapes, where we derive precise expressions for the dependence of the robustness on the landscape parameters for recombining and non-recombining populations. In addition, we carry out numerical simulations on different types of random holey landscapes as well as on an empirical fitness landscape. We show that the mutational robustness of a genotype generally correlates with its recombination weight, a new measure that quantifies the likelihood for the genotype to arise from recombination. We argue that the favorable effect of recombination on mutational robustness is a highly universal feature that may have played an important role in the emergence and maintenance of mechanisms of genetic exchange.
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Submitted 20 October, 2019; v1 submitted 19 February, 2019;
originally announced February 2019.
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Superconducting Energy Scales and Anomalous Dissipative Conductivity in Thin Films of Molybdenum Nitride
Authors:
Julian Simmendinger,
Uwe S. Pracht,
Lena Daschke,
Thomas Proslier,
Jeffrey A. Klug,
Martin Dressel,
Marc Scheffler
Abstract:
We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K $\ge{T_c}\ge$ 2.78 K. Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm$^{-1}$ (0.1 to 1.1 THz). The superconducting energy scales…
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We report investigations of molybdenum nitride (MoN) thin films with different thickness and disorder and with superconducting transition temperature 9.89 K $\ge{T_c}\ge$ 2.78 K. Using terahertz frequency-domain spectroscopy we explore the normal and superconducting charge carrier dynamics for frequencies covering the range from 3 to 38 cm$^{-1}$ (0.1 to 1.1 THz). The superconducting energy scales, i.e. the critical temperature $T_c$, the pairing energy $Δ$, and the superfluid stiffness $J$, and the superfluid density $n_s$ can be well described within the Bardeen-Cooper-Schrieffer theory for conventional superconductors. At the same time, we find an anomalously large dissipative conductivity, which cannot be explained by thermally excited quasiparticles, but rather by a temperature-dependent normal-conducting fraction, persisting deep into the superconducting state. Our results on this disordered system constrain the regime, where discernible effects stemming from the disorder-induced superconductor-insulator transition possibly become relevant, to MoN films with a transition temperature lower than at least 2.78 K.
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Submitted 19 July, 2016;
originally announced July 2016.
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Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors
Authors:
Riccardo Di Pietro,
Deepak Venkateshvaran,
Andreas Klug,
Emil J. W. List-Kratochvil,
Antonio Facchetti,
Henning Sirringhaus,
Dieter Neher
Abstract:
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determin…
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A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides new possibilities for the analysis of the injection and transport processes in semiconducting materials.
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Submitted 21 February, 2014;
originally announced February 2014.
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Tunneling spectroscopy of superconducting MoN and NbTiN grown by atomic layer deposition
Authors:
Nickolas Groll,
Jeffrey A. Klug,
Chaoyue Cao,
Serdar Altin,
Helmut Claus,
Nicholas G. Becker,
John F. Zasadzinski,
Michael J. Pellin,
Thomas Proslier
Abstract:
A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical…
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A tunneling spectroscopy study is presented of superconducting MoN and Nb$_{0.8}$Ti$_{0.2}$N thin films grown by atomic layer deposition (ALD). The films exhibited a superconducting gap of 2meV and 2.4meV respectively with a corresponding critical temperature of 11.5K and 13.4K, among the highest reported $T_c$ values achieved by the ALD technique. Tunnel junctions were obtained using a mechanical contact method with a Au tip. While the native oxides of these films provided poor tunnel barriers, high quality tunnel junctions with low zero bias conductance (below $\sim$10%) were obtained using an artificial tunnel barrier of Al$_2$O$_3$ on the film's surface grown $\textit{ex situ}$ by ALD. We find a large critical current density on the order of $4\times 10^6$A/cm$^2$ at $T=0.8T_c$ for a 60nm MoN film and demonstrate conformal coating capabilities of ALD onto high aspect ratio geometries. These results suggest the ALD technique offers significant promise for thin film superconducting device applications.
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Submitted 20 December, 2013;
originally announced December 2013.
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Heteroepitaxy of Group IV-VI Nitrides by Atomic Layer Deposition
Authors:
Jeffrey A. Klug,
Nicholas G. Becker,
Nickolas R. Groll,
Chaoyue Cao,
Matthew S. Weimer,
Michael J. Pellin,
John F. Zasadzinski,
Thomas Proslier
Abstract:
Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resist…
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Heteroepitaxial growth of selected group IV-VI nitrides on various orientations of sapphire (α-Al2O3) is demonstrated using atomic layer deposition. High quality, epitaxial films are produced at significantly lower temperatures than required by conventional deposition methods. Characterization of electrical and superconducting properties of epitaxial films reveals a reduced room temperature resistivity and increased residual resistance ratio (RRR) for films deposited on sapphire compared to polycrystalline samples deposited concurrently on fused quartz substrates.
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Submitted 6 September, 2013;
originally announced September 2013.
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Measuring roughness of buried interfaces by sputter depth profiling
Authors:
S. V. Baryshev,
J. A. Klug,
A. V. Zinovev,
C. E. Tripa,
J. W. Elam,
I. V. Veryovkin
Abstract:
In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an improved dual beam approach featuring a low energy normally incident direct current sputtering ion beam (first beam). Intensities of 24Mg+ and 64Zn+ secondary ions ge…
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In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an improved dual beam approach featuring a low energy normally incident direct current sputtering ion beam (first beam). Intensities of 24Mg+ and 64Zn+ secondary ions generated by a pulsed analysis ion beam (second beam) were measured as a function of sample depth by time-of-flight secondary ion mass spectrometry (TOF SIMS). Experimental results of this dual beam TOF SIMS depth profiling processed in the framework of the mixing-roughness-information (MRI) model formalism demonstrate that such an approach is capable of providing structural information for layers just a few nm thick. Namely, it was established that the interfacial roughness of the MgO/ZnO multilayer structure equals 1.5 nm. This finding by TOF SIMS was cross-validated by independent measurements with specular X-ray reflectivity (XRR) technique. In addition, the TOF SIMS-MRI analysis suggests that the obtained 1.5 nm roughness should be attributed to the native roughness (jagged type) of the interface rather than to interdiffusion at the interface during the ALD synthesis.
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Submitted 17 May, 2012;
originally announced May 2012.
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Atomic layer deposition and superconducting properties of NbSi films
Authors:
Thomas Proslier,
Jeffrey A. Klug,
Jeffrey W. Elam,
Helmut Claus,
Nicholas G. Becker,
Michael Pellin
Abstract:
Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 Å/cycle. NbSi was found to grow only on oxide-free films prepa…
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Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 Å/cycle. NbSi was found to grow only on oxide-free films prepared using halogenated precursors. The electronic properties, growth rate, chemical composition, and structure of the films were studied over the deposition temperature range 150-400oC. For all temperatures, the films are found to be stoichiometric NbSi (1:1) with no detectable fluorine impurities, amorphous with a density of 6.65g/cm3, and metallic with a resistivity ρ=150 μΩ.cm at 300K for films thicker than 35 nm. The growth rate was nearly constant for deposition temperatures between 150-275oC, but increases above 300oC suggesting the onset of non-self limiting growth. The electronic properties of the films were measured down to 1.2K and revealed a superconducting transition at Tc=3.1K. To our knowledge, a superconducting niobium silicide film with a 1:1 stoichiometry has never been grown before by any technique.
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Submitted 18 April, 2011;
originally announced April 2011.