Showing 1–39 of 39 results for author: Klochan, O

Quantum magnetic oscillations in the absence of closed electron trajectories

Authors: Z. E. Krix, O. A. Tkachenko, V. A. Tkachenko, D. Q. Wang, O. Klochan, A. R. Hamilton, O. P. Sushkov

Abstract: Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused… ▽ More Quantum magnetic oscillations in crystals are typically understood in terms of Bohr-Sommerfeld quantisation, the frequency of oscillation is given by the area of a closed electron trajectory. However, since the 1970s, oscillations have been observed with frequencies that do not correspond to closed electron trajectories and this effect has remained not fully understood. Previous theory has focused on explaining the effect using various kinetic mechanisms, however, frequencies without a closed electron orbit have been observed in equilibrium and so a kinetic mechanism cannot be the entire story. In this work we develop a theory which explains these frequencies in equilibrium and can thus be used to understand measurements of both Shubnikov-de Haas and de Haas-van Alphen oscillations. We show, analytically, that these frequencies arise due to multi-electron correlations. We then extend our theory to explain a recent experiment on artificial crystals in GaAs two-dimensional electron gases, which revealed for the first time magnetic oscillations having frequencies that are half of those previously observed. We show that the half-frequencies arise in equilibrium from single-particle dynamics with account of impurities. Our analytic results are reinforced by exact numerics, which we also use clarify prior works on the kinetic regime. △ Less

Submitted 6 April, 2024; originally announced April 2024.

Comments: 15 pages, 10 figures

Lateral 2D superlattices in GaAs heterostructures with independent control of carrier density and modulation potential

Authors: D. Q. Wang, D. Reuter, A. D. Wieck, A. R. Hamilton, O. Klochan

Abstract: We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise th… ▽ More We present a new double-layer design for 2D surface superlattice systems in GaAs-AlGaAs heterostructures. Unlike previous studies, our device (1) uses an in-situ gate, which allows very short period superlattice in high mobility, shallow heterostructures; (2) enables independent control of the carrier density and the superlattice modulation potential amplitude over a wide range. We characterise this device design using low-temperature magneto-transport measurements and show that the fabrication process caused minimal damage to the system. We demonstrate the tuning of potential modulation from weak (much smaller than Fermi energy) to strong (larger than the Fermi energy) regimes. △ Less

Submitted 11 March, 2024; originally announced March 2024.

Comments: 4 pages, 3 figures

Formation of artificial Fermi surfaces with a triangular superlattice on a conventional two dimensional electron gas

Authors: Daisy Q. Wang, Zeb Krix, Oleg P. Sushkov, Ian Farrer, David A. Ritchie, Alexander R. Hamilton, Oleh Klochan

Abstract: In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties differen… ▽ More In nearly free electron theory the imposition of a periodic electrostatic potential on free electrons creates the bandstructure of a material, determined by the crystal lattice spacing and geometry. Imposing an artificially designed potential to the electrons confined in a GaAs quantum well makes it possible to engineer synthetic two-dimensional band structures, with electronic properties different from those in the host semiconductor. Here we report the fabrication and study of a tuneable triangular artificial lattice on a GaAs/AlGaAs heterostructure where it is possible to transform from the original GaAs bandstructure and Fermi surface to a new bandstructure with multiple artificial Fermi surfaces simply by altering a gate bias. For weak electrostatic potential modulation magnetotransport measurements reveal quantum oscillations from the GaAs two-dimensional Fermi surface, and classical oscillations due to these electrons scattering from the artificial lattice. Increasing the strength of the modulation reveals new quantum oscillations due to the formation of multiple artificial Fermi surfaces, and ultimately to new classical oscillations of the electrons from the artificial Fermi surface scattering from the superlattice modulation. These results show that low disorder gate-tuneable lateral superlattices can be used to form artificial two dimensional crystals with designer electronic properties. △ Less

Submitted 11 March, 2024; originally announced March 2024.

Comments: 19 pages, 6 figures

Tuning the bandstructure of electrons in a two-dimensional artificial electrostatic crystal in GaAs quantum wells

Authors: Daisy Q. Wang, Zeb Krix, Olga A. Tkachenko, Vitaly A. Tkachenko, Chong Chen, Ian Farrer, David A. Ritchie, Oleg P. Sushkov, Alexander R. Hamilton, Oleh Klochan

Abstract: The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest w… ▽ More The electronic properties of solids are determined by the crystal structure and interactions between electrons, giving rise to a variety of collective phenomena including superconductivity, strange metals and correlated insulators. The mechanisms underpinning many of these collective phenomena remain unknown, driving interest in creating artificial crystals which replicate the system of interest while allowing precise control of key parameters. Cold atoms trapped in optical lattices provide great flexibility and tunability [1, 2], but cannot replicate the long range Coulomb interactions and long range hop** that drive collective phenomena in real crystals. Solid state approaches support long range hop** and interactions, but previous attempts with laterally patterned semiconductor systems were not able to create tunable low disorder artificial crystals, while approaches based on Moire superlattices in twisted two-dimensional (2D) materials [3, 4] have limited tunability and control of lattice geometry. Here we demonstrate the formation of highly tunable artificial crystals by superimposing a periodic electrostatic potential on the 2D electron gas in an ultrashallow (25 nm deep) GaAs quantum well. The 100 nm period artificial crystal is identified by the formation of a new bandstructure, different from the original cubic crystal and unique to the artificial triangular lattice: transport measurements show the Hall coefficient changing sign as the chemical potential sweeps through the artificial bands. Uniquely, the artificial bandstructure can be continuously tuned from parabolic free-electron bands into linear graphene-like and flat kagome-like bands in a single device. This approach allows the formation arbitrary geometry 2D artificial crystals, opening a new route to studying collective quantum states. △ Less

Submitted 20 February, 2024; originally announced February 2024.

Comments: 30 pages, 11 figures

Probing Fermi surface parity with spin resolved transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, S. Bladwell, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, O. P. Sushkov, A. R. Hamilton

Abstract: Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k… ▽ More Measurements of the Fermi surface are a fundamental technique for determining the electrical and magnetic properties of solids. In 2D systems, the area and diameter of the Fermi surface is typically measured using Shubnikov-de Haas oscillations and commensurability oscillations respectively. However, these techniques are unable to detect changes in the parity of the Fermi surface (i.e. when +k $\neq$ -k). Here, we show that transverse magnetic focussing can be used to detect such changes, because focussing only measures a well defined section of the Fermi surface and does not average over +k and -k. Furthermore, our results show that focussing is an order of magnitude more sensitive to changes in the Fermi surface than other 2D techniques, and could be used to investigate similar Fermi surface changes in other 2D systems. △ Less

Submitted 7 March, 2024; v1 submitted 6 October, 2023; originally announced October 2023.

Observation of oscillating $g$-factor anisotropy arising from strong crystal lattice anisotropy in GaAs spin-3/2 hole quantum point contacts

Authors: Karina Hudson, Ashwin Srinivasan, Dmitry Miserev, Qingwen Wang, Oleh Klochan, Oleg Sushkov, Ian Farrer, David Ritchie, Alex Hamilton

Abstract: Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum confinement asymmetry (Rashba). One-dimensional quantum point contacts are a powerful tool to probe both energy and directional dependence of spin-orbit interactio… ▽ More Many modern spin-based devices rely on the spin-orbit interaction, which is highly sensitive to the host semiconductor heterostructure and varies substantially depending on crystal direction, crystal asymmetry (Dresselhaus), and quantum confinement asymmetry (Rashba). One-dimensional quantum point contacts are a powerful tool to probe both energy and directional dependence of spin-orbit interaction through the effect on the hole $g$-factor. In this work we investigate the role of cubic crystal asymmetry in driving an oscillation in the in-plane hole $g$-factor anisotropy when the quantum point contact is rotated with respect to the crystal axes, and we are able to separate contributions to the Zeeman Hamiltonian arising from Rashba and cubic crystal asymmetry spin-orbit interactions. The in-plane $g$-factor is found to be extremely sensitive to the orientation of the quantum point contact, changing by a factor of $5$ when rotated by $45^{\circ}$. This exceptionally strong crystal lattice anisotropy of the in-plane Zeeman splitting cannot be explained within axially symmetric theoretical models. Theoretical modelling based on the combined Luttinger, Rashba and Dresselhaus Hamiltonians that we use here reveals new spin-orbit contributions to the in-plane hole $g$-factor and provides an excellent agreement with our experimental data. △ Less

Submitted 7 November, 2022; v1 submitted 31 October, 2022; originally announced November 2022.

Comments: 8 pages, 4 figures

Spin polarisation and spin dependent scattering of holes in transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Abstract: In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally assoc… ▽ More In 2D systems with a spin-orbit interaction, magnetic focussing can be used to create a spatial separation of particles with different spin. Here we measure hole magnetic focussing for two different magnitudes of the Rashba spin-orbit interaction. We find that when the Rashba spin-orbit magnitude is large there is significant attenuation of one of the focussing peaks, which is conventionally associated with a change in the spin polarisation. We instead show that in hole systems with a $k^3$ spin-orbit interaction, this peak suppression is due to a change in the scattering of one spin state, not a change in spin polarisation. We also show that the change in scattering length extracted from magnetic focussing is consistent with results obtained from measurements of Shubnikov-de Haas oscillations. This result suggests that scattering must be considered when relating focussing peak amplitude to spin polarisation in hole systems △ Less

Submitted 7 October, 2022; originally announced October 2022.

Gate voltage dependent Rashba spin splitting in hole transverse magnetic focussing

Authors: M. J. Rendell, S. D. Liles, A. Srinivasan, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton

Abstract: Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term… ▽ More Magnetic focussing of charge carriers in two-dimensional systems provides a solid state version of a mass spectrometer. In the presence of a spin-orbit interaction, the first focussing peak splits into two spin dependent peaks, allowing focussing to be used to measure spin polarisation and the strength of the spin-orbit interaction. In hole systems, the k^3 dependence of the Rashba spin-orbit term allows the spatial separation of spins to be changed in-situ using a voltage applied to an overall top gate. Here we demonstrate that this can be used to control the splitting of the magnetic focussing peaks. Additionally, we compare the focussing peak splitting to that predicted by Shubnikov-de Haas oscillations and k.p bandstructure calculations. We find that the focussing peak splitting is consistently larger than expected, suggesting further work is needed on understanding spin dependent magnetic focussing. △ Less

Submitted 3 April, 2022; originally announced April 2022.

Geometric control of universal hydrodynamic flow in a two dimensional electron fluid

Authors: Aydın Cem Keser, Daisy Q. Wang, Oleh Klochan, Derek Y. H. Ho, Olga A. Tkachenko, Vitaly A. Tkachenko, Dimitrie Culcer, Shaffique Adam, Ian Farrer, David A. Ritchie, Oleg P. Sushkov, Alexander R. Hamilton

Abstract: Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion… ▽ More Fluid dynamics is one of the cornerstones of modern physics and has recently found applications in the transport of electrons in solids. In most solids electron transport is dominated by extrinsic factors, such as sample geometry and scattering from impurities. However in the hydrodynamic regime Coulomb interactions transform the electron motion from independent particles to the collective motion of a viscous `electron fluid'. The fluid viscosity is an intrinsic property of the electron system, determined solely by the electron-electron interactions. Resolving the universal intrinsic viscosity is challenging, as it only affects the resistance through interactions with the sample boundaries, whose roughness is not only unknown but also varies from device to device. Here we eliminate all unknown parameters by fabricating samples with smooth sidewalls to achieve the perfect slip boundary condition, which has been elusive both in molecular fluids and electronic systems. We engineer the device geometry to create viscous dissipation and reveal the true intrinsic hydrodynamic properties of a 2D system. We observe a clear transition from ballistic to hydrodynamic electron motion, driven by both temperature and magnetic field. We directly measure the viscosity and electron-electron scattering lifetime (the Fermi quasiparticle lifetime) over a wide temperature range without fitting parameters, and show they have a strong dependence on electron density that cannot be explained by conventional theories based on the Random Phase Approximation. △ Less

Submitted 17 March, 2021; originally announced March 2021.

Journal ref: Phys. Rev. X 11, 031030 (2021)

Detection and control of spin-orbit interactions in a GaAs hole quantum point contact

Authors: A. Srinivasan, D. S. Miserev, K. L. Hudson, O. Klochan, K. Muraki, Y. Hirayama, D. Reuter, A. D. Wieck, O. P. Sushkov, A. R. Hamilton

Abstract: We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap dep… ▽ More We investigate the relationship between the Zeeman interaction and the inversion asymmetry induced spin orbit interactions (Rashba and Dresselhaus SOIs) in GaAs hole quantum point contacts. The presence of a strong SOI results in crossing and anti-crossing of adjacent spin-split hole subbands in a magnetic field. We demonstrate theoretically and experimentally that the anti-crossing energy gap depends on the interplay between the SOI terms and the highly anisotropic hole g tensor, and that this interplay can be tuned by selecting the crystal axis along which the current and magnetic field are aligned. Our results constitute independent detection and control of the Dresselhaus and Rashba SOIs in hole systems, which could be of importance for spintronics and quantum information applications. △ Less

Submitted 12 March, 2017; originally announced March 2017.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 118, 146801 (2017)

Thickness dependent electronic structure in WTe$_2$ thin films

Authors: Fei-Xiang Xiang, Ashwin Srinivasan, Oleh Klochan, Shi-Xue Dou, Alex R. Hamilton, Xiao-Lin Wang

Abstract: We study the electronic structure of WTe$_2$ thin film fakes with different thickness down to 11 nm. Angle-dependent quantum oscillations reveal a crossover from a three-dimensional (3D) to a two-dimensional (2D) electronic system when the sample thickness is reduced below 26 nm. The quantum oscillations further show that the Fermi pockets get smaller as the samples are made thinner, indicating th… ▽ More We study the electronic structure of WTe$_2$ thin film fakes with different thickness down to 11 nm. Angle-dependent quantum oscillations reveal a crossover from a three-dimensional (3D) to a two-dimensional (2D) electronic system when the sample thickness is reduced below 26 nm. The quantum oscillations further show that the Fermi pockets get smaller as the samples are made thinner, indicating that the overlap between conduction and valence bands is getting smaller and implying the spatial confinement could lift the overlap in even thinner samples. In addition, the quadratic magnetoresistance (MR) also shows a crossover from 3D to 2D behavior as the samples are made thinner, while gating is shown to affect both the quadratic MR and the quantum oscillations of a thin sample by tuning its carrier density. △ Less

Submitted 8 March, 2017; originally announced March 2017.

Comments: 10 pages, 7 figures, supplementary material included

Journal ref: Phys. Rev. B 98, 035115 (2018)

Electrical control of the sign of the g-factor in a GaAs hole quantum point contact

Authors: A. Srinivasan, K. L. Hudson, D. S. Miserev, L. A. Yeoh, O. Klochan, K. Muraki, Y. Hirayama, O. P. Sushkov, A. R. Hamilton

Abstract: Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to… ▽ More Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually determine the sign. Here we use a combination of tilted fields and a unique off-diagonal element in the hole g-tensor to directly detect the sign of g*. We are able to tune not only the magnitude, but also the sign of the g-factor by electrical means, which is of interest for spintronics applications. Furthermore, we show theoretically that the resulting behavior of g* can be explained by the momentum dependence of the spin-orbit interaction. △ Less

Submitted 26 February, 2017; originally announced February 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 94, 041406(R), 2016

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot

Authors: Daisy Q. Wang, Oleh Klochan, Jo-Tzu Hung, Dimitrie Culcer, Ian Farrer, David A. Ritchie, Alexander R. Hamilton

Abstract: Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly du… ▽ More Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here we present electrical transport measurements on holes in a gate-defined double quantum dot in a $\mathrm{GaAs/Al_xGa_{1-x}As}$ heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction. △ Less

Submitted 3 December, 2016; originally announced December 2016.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright ©American Chemical Society after peer review. To access the final edited and published work see http://pubs.acs.org/doi/full/10.1021/acs.nanolett.6b03752, Nano Letters, published online 24 Nov, 2016

Manifestation of a non-abelian gauge field in a p-type semiconductor system

Authors: T. Li, L. A. Yeoh, A. Srinivasan, O. Klochan, D. A. Ritchie, M. Y. Simmons, O. P. Sushkov, A. R Hamilton

Abstract: Gauge theories, while describing fundamental interactions in nature, also emerge in a wide variety of physical systems. Abelian gauge fields have been predicted and observed in a number of novel quantum many-body systems, topological insulators, ultracold atoms and many others. However, the non-abelian gauge field, while playing the most fundamental role in particle physics, up to now has remained… ▽ More Gauge theories, while describing fundamental interactions in nature, also emerge in a wide variety of physical systems. Abelian gauge fields have been predicted and observed in a number of novel quantum many-body systems, topological insulators, ultracold atoms and many others. However, the non-abelian gauge field, while playing the most fundamental role in particle physics, up to now has remained a purely theoretical construction in many-body physics. In the present paper we report the first observation of a non-abelian gauge field in a spin-orbit coupled quantum system. The gauge field manifests itself in quantum magnetic oscillations of a hole doped two-dimensional (2D) GaAs heterostructure. Transport measurements were performed in tilted magnetic fields, where the effect of the emergent non-abelian gauge field was controlled by the components of the magnetic field in the 2D plane. △ Less

Submitted 1 June, 2016; v1 submitted 20 April, 2016; originally announced April 2016.

Comments: 11 pages, 8 figures

Transport in disordered monolayer molybdenum disulfide nanoflakes: evidence for inhomogeneous charge transport

Authors: Shun-Tsung Lo, O. Klochan, C. -H. Liu, W. -H. Wang, A. R. Hamilton, C. -T. Liang

Abstract: We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and un… ▽ More We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks translational invariance, breaking the system up into a series of puddles, rather than previous pictures in which the disorder is treated as homogeneous and uniform. Our work provides insight to a unified picture of charge transport in monolayer molybdenum disulfide nanoflakes and contributes to the development of next-generation molybdenum disulfide based devices. △ Less

Submitted 30 August, 2014; originally announced September 2014.

Comments: Evidence for inhomogeneous charge transport in Molybdenum disulfide

Journal ref: Nanotechnol. 25, 375201 (2014)

Landau level spin diode in a GaAs two dimensional hole system

Authors: O. Klochan, A. R. Hamilton, K. das Gupta, F. Sfigakis, H. E. Beere, D. A. Ritchie

Abstract: We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems… ▽ More We have fabricated and characterized the Landau level spin diode in GaAs two dimensional hole system. We used the hole Landau level spin diode to probe the hyperfine coupling between the hole and nuclear spins and found no detectable net nuclear polarization, indicating that hole-nuclear spin flip-flop processes are suppressed by at least three orders of magnitude compared to GaAs electron systems. △ Less

Submitted 15 June, 2014; originally announced June 2014.

Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot

Authors: D. J. Carrad, A. M. Burke, O. Klochan, A. M. See, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si accept… ▽ More We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin temperatures. Recent experiments in electron quantum dots have shown that the MCF is sensitive to the disorder potential created by remote ionised impurities. We utilize this to study the temporal/thermal stability of Si acceptors in p-type AlGaAs/GaAs heterostructures. In particular, we use a surface gate to cause charge migration between Si acceptor sites at T = 40 mK, and detect the ensuing changes in the disorder potential using the MCF. We show that Si acceptors are metastable at T = 40 mK and that raising the device to a temperature T = 4.2 K and returning to T = 40 mK is sufficient to produce complete decorrelation of the MCF. The same decorrelation occurs at T ~ 165 K for electron quantum dots; by comparing with the known trap energy for Si DX centers, we estimate that the shallow acceptor traps in our heterostructures have an activation energy EA ~ 3 meV. Our method can be used to study charge noise and dopant stability towards optimisation of semiconductor materials and devices. △ Less

Submitted 7 April, 2014; v1 submitted 5 December, 2013; originally announced December 2013.

A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

Authors: A. M. See, O. Klochan, A. P. Micolich, M. Aagesen, P. E. Lindelof, A. R. Hamilton

Abstract: We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependence of these features indicate the couplings between the leads and t… ▽ More We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependence of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects that arise from coherent tunneling of electrons in the dot. △ Less

Submitted 17 October, 2013; originally announced October 2013.

Scaling of the Kondo zero bias peak in a hole quantum dot at finite temperatures

Authors: O. Klochan, A. P. Micolich, A. R. Hamilton, D. Reuter, A. D. Wieck, F. Reininghaus, M. Pletyukhov, H. Schoeller

Abstract: We have measured the zero bias peak in differential conductance in a hole quantum dot. We have scaled the experimental data with applied bias and compared to real time renormalization group calculations of the differential conductance as a function of source-drain bias in the limit of zero temperature and at finite temperatures. The experimental data show deviations from the T=0 calculations at lo… ▽ More We have measured the zero bias peak in differential conductance in a hole quantum dot. We have scaled the experimental data with applied bias and compared to real time renormalization group calculations of the differential conductance as a function of source-drain bias in the limit of zero temperature and at finite temperatures. The experimental data show deviations from the T=0 calculations at low bias, but are in very good agreement with the finite T calculations. The Kondo temperature T_K extracted from the data using T=0 calculations, and from the peak width at 2/3 maximum, is significantly higher than that obtained from finite T calculations. △ Less

Submitted 6 May, 2013; originally announced May 2013.

Comments: Accepted to Phys. Rev. B (Rapid)

Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure

Authors: A. Srinivasan, L. A. Yeoh, O. Klochan, T. P. Martin, J. C. H. Chen, A. P. Micolich, A. R. Hamilton, D. Reuter, A. D. Wieck

Abstract: The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g_perp = 5, which is larger than previous optical studies of g_perp, and is approaching the long predicted bu… ▽ More The out-of-plane g-factor g_perp for quasi-2D holes in a (100) GaAs heterostructure is studied using a variable width quantum wire. A direct measurement of the Zeeman splitting is performed in a magnetic field applied perpendicular to the 2D plane. We measure an out-of-plane g-factor up to g_perp = 5, which is larger than previous optical studies of g_perp, and is approaching the long predicted but never experimentally verified out-of-plane g-factor of 7.2 for heavy holes. △ Less

Submitted 30 January, 2013; originally announced January 2013.

Comments: 5 pages 4 Figures

Journal ref: A. Srinivasan et al., Nano Lett., 13(1), pp148-152, (2013)

Extreme sensitivity of the spin-splitting and 0.7 anomaly to confining potential in one-dimensional nanoelectronic devices

Authors: A. M. Burke, O. Klochan, I. Farrer, D. A. Ritchie, A. R. Hamilton, A. P. Micolich

Abstract: Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 x 2e^2/h anomaly. We report on the dependence of the 1D Lande g-factor g* and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g* val… ▽ More Quantum point contacts (QPCs) have shown promise as nanoscale spin-selective components for spintronic applications and are of fundamental interest in the study of electron many-body effects such as the 0.7 x 2e^2/h anomaly. We report on the dependence of the 1D Lande g-factor g* and 0.7 anomaly on electron density and confinement in QPCs with two different top-gate architectures. We obtain g* values up to 2.8 for the lowest 1D subband, significantly exceeding previous in-plane g-factor values in AlGaAs/GaAs QPCs, and approaching that in InGaAs/InP QPCs. We show that g* is highly sensitive to confinement potential, particularly for the lowest 1D subband. This suggests careful management of the QPC's confinement potential may enable the high g* desirable for spintronic applications without resorting to narrow-gap materials such as InAs or InSb. The 0.7 anomaly and zero-bias peak are also highly sensitive to confining potential, explaining the conflicting density dependencies of the 0.7 anomaly in the literature. △ Less

Submitted 23 August, 2012; originally announced August 2012.

Comments: 23 pages, 7 figures

The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

Authors: A. M. Burke, D. Waddington, D. Carrad, R. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

Abstract: Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of… ▽ More Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conducted using custom-grown, matched modulation-doped n-type and p-type heterostructures, with/without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness' of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trap** and charge migration in the do** layer. Our results provide insights into the physics of Si acceptors in AlGaAs/GaAs heterostructures, including widely-debated acceptor complexes such as Si-X. We propose methods for mitigating the gate hysteresis, including poisoning the modulation-do** layer with deep-trap** centers (e.g., by co-do** with transition metal species), and replacing the Schottky gates with degenerately-doped semiconductor gates to screen the conducting channel from GaAs surface-states. △ Less

Submitted 15 September, 2012; v1 submitted 12 July, 2012; originally announced July 2012.

Comments: 15 pages, 11 figures; Accepted for Physical Review B

Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Authors: J. C. H. Chen, D. Q. Wang, O. Klochan, A. P. Micolich, K. Das Gupta, F. Sfigakis, D. A. Ritchie, D. Reuter, A. D. Wieck, A. R. Hamilton

Abstract: We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons (… ▽ More We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons ($μ_\textrm{peak}=4\times10^6\textrm{cm}^2/\textrm{Vs}$) and holes ($μ_\textrm{peak}=0.8\times10^6\textrm{cm}^2/\textrm{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory. △ Less

Submitted 3 April, 2012; originally announced April 2012.

Comments: related papers at http://www.phys.unsw.edu.au/qed

Journal ref: Applied Physics Letters 100, 052101 (2012)

The Impact of Small-Angle Scattering on Ballistic Transport in Quantum Dots

Authors: A. M. See, I. Pilgrim, B. C. Scannell, R. D. Montgomery, O. Klochan, A. M. Burke, M. Aagesen, P. E. Lindelof, I. Farrer, D. A. Ritchie, R. P. Taylor, A. R. Hamilton, A. P. Micolich

Abstract: Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and tha… ▽ More Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behavior of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential, and that by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for `ballistic' transport in quantum dots. △ Less

Submitted 31 March, 2012; originally announced April 2012.

Comments: In press for Phys. Rev. Lett

Journal ref: Physical Review Letters 108, 196807 (2012)

Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas

Authors: W. Y. Mak, F. Sfigakis, K. Das Gupta, O. Klochan, H. E. Beere, I. Farrer, J. P. Griffiths, G. A. C. Jones, A. R. Hamilton, D. A. Ritchie

Abstract: We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be… ▽ More We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more than one order of magnitude in mobility (at 2E11 /cm^2) with respect to doped heterostructures with similar depths is observed. These undoped wafers can easily be gated with surface metallic gates patterned by e-beam lithography, as demonstrated here from single-level transport through a quantum dot showing large charging energies (up to 1.75 meV) and excited state energies (up to 0.5 meV). △ Less

Submitted 16 March, 2013; v1 submitted 21 December, 2011; originally announced December 2011.

Comments: 4 pages, 4 figures; added figures, references, equations, and text; results/conclusions otherwise unchanged

Journal ref: Applied Physics Letters 102, 103507 (2013)

Overlap**-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Authors: Laurens H. Willems Van Beveren, Kuan Y. Tan, Nai-Shyan Lai, Oleh Klochan, Andrew S. Dzurak, Alex R. Hamilton

Abstract: A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefo… ▽ More A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a voltage bias applied across the source and drain contact of a Hall bar MOSFET will mostly fall across the contacts (and not across the channel) and therefore magneto-transport measurements become challenging. However, from a physical point of view, the study of MOSFET nanostructures in the low electron density regime is very interesting (impurity limited mobility [1], carrier interactions [2,3] and spin-dependent transport [4]) and it is therefore important to come up with solutions [5,6] that work around the problem of a high contact resistance in such devices (c.f. Fig. 1 (a)). △ Less

Submitted 6 October, 2011; originally announced October 2011.

Comments: 3 pages

Journal ref: Materials Science Forum Vol. 700, Advanced Materials and Nanotechnology (AMN-5), 2011 conference on, 93-95 (2012)

Fabrication of undoped AlGaAs/GaAs electron quantum dots

Authors: Andrew M. See, Oleh Klochan, Adam P. Micolich, Alex R. Hamilton, Martin. Aagesen, Poul Erik Lindelof

Abstract: We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation do**. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show ty… ▽ More We have fabricated a quantum dot single electron transistor based on an AlGaAs/GaAs heterostructure without any modulation do**. Our device is very stable from an electronic perspective, with clear Coulomb blockade oscillations, and minimal drift in conductance when the device is set to the midpoint of a Coulomb blockade peak and held at constant gate bias. Bias spectroscopy measurements show typical Coulomb 'diamonds' free of any significant charge fluctuation noise. We also observe excited state transport in our device. △ Less

Submitted 29 June, 2011; originally announced June 2011.

Comments: 3 pages, 5 figures, ICONN2010 conference paper

Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot

Authors: O. Klochan, A. P. Micolich, A. R. Hamilton, K. Trunov, D. Reuter, A. D. Wieck

Abstract: We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the Zeeman spin-splitting of the zero-bias peak in the differential conductance is independent of gate voltage. Second, this splitt… ▽ More We report the observation of Kondo physics in a spin- 3/2 hole quantum dot. The dot is formed close to pinch-off in a hole quantum wire defined in an undoped AlGaAs/GaAs heterostructure. We clearly observe two distinctive hallmarks of quantum dot Kondo physics. First, the Zeeman spin-splitting of the zero-bias peak in the differential conductance is independent of gate voltage. Second, this splitting is twice as large as the splitting for the lowest one-dimensional subband. We show that the Zeeman splitting of the zero-bias peak is highly-anisotropic, and attribute this to the strong spin-orbit interaction for holes in GaAs. △ Less

Submitted 20 July, 2011; v1 submitted 1 March, 2011; originally announced March 2011.

Comments: 4 pages, 4 figures

Piezoelectric rotator for studying quantum effects in semiconductor nanostructures at high magnetic fields and low temperatures

Authors: L. A. Yeoh, A. Srinivasan, T. P. Martin, O. Klochan, A. P. Micolich, A. R. Hamilton

Abstract: We report the design and development of a piezoelectric sample rotation system, and its integration into an Oxford Instruments Kelvinox 100 dilution refrigerator, for orientation-dependent studies of quantum transport in semiconductor nanodevices at millikelvin temperatures in magnetic fields up to 10T. Our apparatus allows for continuous in situ rotation of a device through >100deg in two possibl… ▽ More We report the design and development of a piezoelectric sample rotation system, and its integration into an Oxford Instruments Kelvinox 100 dilution refrigerator, for orientation-dependent studies of quantum transport in semiconductor nanodevices at millikelvin temperatures in magnetic fields up to 10T. Our apparatus allows for continuous in situ rotation of a device through >100deg in two possible configurations. The first enables rotation of the field within the plane of the device, and the second allows the field to be rotated from in-plane to perpendicular to the device plane. An integrated angle sensor coupled with a closed-loop feedback system allows the device orientation to be known to within +/-0.03deg whilst maintaining the sample temperature below 100mK. △ Less

Submitted 14 September, 2010; originally announced September 2010.

Comments: 8 pages, 5 figures

AlGaAs/GaAs single electron transistors fabricated without modulation do**

Authors: A. M. See, O. Klochan, A. R. Hamilton, A. P. Micolich, M. Aagesen, P. E. Lindelof

Abstract: We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation do**, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak lineshape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract th… ▽ More We have fabricated quantum dot single electron transistors, based on AlGaAs/GaAs heterojunctions without modulation do**, which exhibit clear and stable Coulomb blockade oscillations. The temperature dependence of the Coulomb blockade peak lineshape is well described by standard Coulomb blockade theory in the quantum regime. Bias spectroscopy measurements have allowed us to directly extract the charging energy, and showed clear evidence of excited state transport, confirming that individual quantum states in the dot can be resolved. △ Less

Submitted 28 February, 2010; originally announced March 2010.

Comments: 4 pages, 4 figures

Fabrication and characterization of an induced GaAs single hole transistor

Authors: O. Klochan, J. C. H. Chen, A. P. Micolich, A. R. Hamilton, K. Muraki, Y. Hirayama

Abstract: We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation do**. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulatio… ▽ More We have fabricated and characterized a single hole transistor in an undoped AlGaAs-GaAs heterostructure. Our device consists of a p-type quantum dot, populated using an electric field rather than modulation do**. Low temperature transport measurements reveal periodic conductance oscillations due to Coulomb blockade. We find that the low frequency charge noise is comparable to that in modulation-doped GaAs single electron transistors (SETs), and almost an order of magnitude better than in silicon SETs. △ Less

Submitted 15 February, 2010; originally announced February 2010.

Comments: accepted for publication in Applied Physics Letters

Observation of orientation- and $k$-dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures

Authors: J. C. H. Chen, O. Klochan, A. P. Micolich, A. R. Hamilton, T. P. Martin, L. H. Ho, U. Zuelicke, D. Reuter, A. D. Wieck

Abstract: We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be switched `on' (finite $g^{*}$) or `off' (zero $g^{*}$) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the… ▽ More We study the Zeeman spin-splitting in hole quantum wires oriented along the $[011]$ and $[01\bar{1}]$ crystallographic axes of a high mobility undoped (100)-oriented AlGaAs/GaAs heterostructure. Our data shows that the spin-splitting can be switched `on' (finite $g^{*}$) or `off' (zero $g^{*}$) by rotating the field from a parallel to a perpendicular orientation with respect to the wire, and the properties of the wire are identical for the two orientations with respect to the crystallographic axes. We also find that the $g$-factor in the parallel orientation decreases as the wire is narrowed. This is in contrast to electron quantum wires, where the $g$-factor is enhanced by exchange effects as the wire is narrowed. This is evidence for a $k$-dependent Zeeman splitting that arises from the spin-3/2 nature of holes. △ Less

Submitted 29 September, 2009; originally announced September 2009.

Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires

Authors: O. Klochan, A. P. Micolich, L. H. Ho, A. R. Hamilton, K. Muraki, Y. Hirayama

Abstract: We study the Zeeman splitting in induced ballistic 1D quantum wires aligned along the [233] and [011] axes of a high mobility (311)A undoped heterostructure. Our data shows that the g-factor anisotropy for magnetic fields applied along the high symmetry [011] direction can be explained by the 1D confinement only. However when the magnetic field is along [233] there is an interplay between the 1D… ▽ More We study the Zeeman splitting in induced ballistic 1D quantum wires aligned along the [233] and [011] axes of a high mobility (311)A undoped heterostructure. Our data shows that the g-factor anisotropy for magnetic fields applied along the high symmetry [011] direction can be explained by the 1D confinement only. However when the magnetic field is along [233] there is an interplay between the 1D confinement and 2D crystal anisotropy. This is highlighted for the [233] wire by an unusual non-monotonic behavior of the g-factor as the wire is made narrower. △ Less

Submitted 5 September, 2008; originally announced September 2008.

The effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems

Authors: L. H. Ho, W. R. Clarke, A. P. Micolich, R. Danneau, O. Klochan, M. Y. Simmons, A. R. Hamilton, M. Pepper, D. A. Ritchie

Abstract: We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground-plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and measurement cool-down, thereby maintaining a constant disorder potential. In contrast to recent measurements of the effect of ground-plane screening of the long-range… ▽ More We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground-plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and measurement cool-down, thereby maintaining a constant disorder potential. In contrast to recent measurements of the effect of ground-plane screening of the long-range Coulomb interaction in the insulating regime, we find surprisingly little effect on the metallic behavior when we change the distance between the 2DHS and the nearby ground-plane. △ Less

Submitted 25 April, 2008; originally announced April 2008.

Comments: 5 pages, 4 figures, accepted for publication in PRB

0.7 Structure and Zero Bias Anomaly in Ballistic Hole Quantum Wires

Authors: R. Danneau, O. Klochan, W. R. Clarke, L. H. Ho, A. P. Micolich, M. Y. Simmons, A. R. Hamilton, M. Pepper, D. A. Ritchie

Abstract: We study the anomalous conductance plateau around $G = 0.7(2e^{2}/h)$ and the zero-bias anomaly in ballistic hole quantum wires with respect to in-plane magnetic fields applied parallel $B_{\parallel}$ and perpendicular $B_{\perp}$ to the quantum wire. As seen in electron quantum wires, the magnetic fields shift the 0.7 structure down to $G = 0.5(2e^{2}/h)$ and simultaneously quench the zero bia… ▽ More We study the anomalous conductance plateau around $G = 0.7(2e^{2}/h)$ and the zero-bias anomaly in ballistic hole quantum wires with respect to in-plane magnetic fields applied parallel $B_{\parallel}$ and perpendicular $B_{\perp}$ to the quantum wire. As seen in electron quantum wires, the magnetic fields shift the 0.7 structure down to $G = 0.5(2e^{2}/h)$ and simultaneously quench the zero bias anomaly. However, these effects are strongly dependent on the orientation of the magnetic field, owing to the highly anisotropic effective Landé \emph{g}-factor $g^{*}$ in hole quantum wires. Our results highlight the fundamental role that spin plays in both the 0.7 structure and zero bias anomaly. △ Less

Submitted 1 July, 2008; v1 submitted 8 February, 2007; originally announced February 2007.

Comments: Phys. Rev. Lett. 100, 016403 (2008)

Ballistic transport in induced one-dimensional hole systems

Authors: O. Klochan, W. R. Clarke, R. Danneau, A. P. Micolich, L. H. Ho, A. R. Hamilton, K. Muraki, Y. Hirayama

Abstract: We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation do** eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clea… ▽ More We have fabricated and studied a ballistic one-dimensional p-type quantum wire using an undoped AlGaAs/GaAs heterostructure. The absence of modulation do** eliminates remote ionized impurity scattering and allows high mobilities to be achieved over a wide range of hole densities, and in particular, at very low densities where carrier-carrier interactions are strongest. The device exhibits clear quantized conductance plateaus with highly stable gate characteristics. These devices provide opportunities for studying spin-orbit coupling and interaction effects in mesoscopic hole systems in the strong interaction regime where rs > 10. △ Less

Submitted 19 July, 2006; originally announced July 2006.

Comments: 6 pages, 4 figures (accepted to Applied Physics Letters)

Anisotropic Zeeman splitting in ballistic one-dimensional hole systems

Authors: R. Danneau, O. Klochan, W. R. Clarke, L. H. Ho, A. P. Micolich, M. Y. Simmons, A. R. Hamilton, M. Pepper, D. A. Ritchie, U. Zuelicke

Abstract: We have studied the effect of an in-plane magnetic field B on a one-dimensional hole system in the ballistic regime created by surface gate confinement. We observed clearly the lifting of the spin degeneracy due to the Zeeman effect on the one dimensional subbands for B applied parallel to the channel. In contrast, no Zeeman splitting is detected for B applied perpendicular to the channel, revea… ▽ More We have studied the effect of an in-plane magnetic field B on a one-dimensional hole system in the ballistic regime created by surface gate confinement. We observed clearly the lifting of the spin degeneracy due to the Zeeman effect on the one dimensional subbands for B applied parallel to the channel. In contrast, no Zeeman splitting is detected for B applied perpendicular to the channel, revealing an extreme anisotropy of the effective Lande g-factor g*. We demonstrate that this anisotropy is a direct consequence of the one-dimensional confinement on a system with strong spin-orbit coupling. △ Less

Submitted 14 July, 2006; originally announced July 2006.

Comments: Submitted for publication in AIP Proceedings for the 28th International Conference on the Physics of Semiconductors (ICPS 28), Vienna, Austria

Zeeman splitting in ballistic hole quantum wires

Authors: R. Danneau, O. Klochan, W. R. Clarke, L. H. Ho, A. P. Micolich, M. Y. Simmons, A. R. Hamilton, M. Pepper, D. A. Ritchie, U. Zuelicke

Abstract: We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin-splitting is discernible up to B = 8.8 T. The obse… ▽ More We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin-splitting is discernible up to B = 8.8 T. The observed large Zeeman splitting anisotropy in our hole quantum wires demonstrates the importance of quantum-confinement for spin-splitting in nanostructures with strong spin-orbit coupling. △ Less

Submitted 14 July, 2006; originally announced July 2006.

Journal ref: Phys. Rev. Lett. 97, 026403 (2006)

Conductance quantization and the 0.7x2e2/h conductance anomaly in one-dimensional hole systems

Authors: R. Danneau, W. R. Clarke, O. Klochan, A. P. Micolich, A. R. Hamilton, M. Y. Simmons, M. Pepper, D. A. Ritchie

Abstract: We have studied ballistic transport in a 1D channel formed using surface gate techniques on a back-gated, high-mobility, bilayer 2D hole system. At millikelvin temperatures, robust conductance quantization is observed in the quantum wire formed in the top layer of the bilayer system, without the gate instabilities that have hampered previous studies of 1D hole systems. Using source drain bias sp… ▽ More We have studied ballistic transport in a 1D channel formed using surface gate techniques on a back-gated, high-mobility, bilayer 2D hole system. At millikelvin temperatures, robust conductance quantization is observed in the quantum wire formed in the top layer of the bilayer system, without the gate instabilities that have hampered previous studies of 1D hole systems. Using source drain bias spectroscopy, we have measured the 1D subband spacings, which are 5-10 times smaller than in comparable GaAs electron systems, but 2-3 times larger than in previous studies of 1D holes. We also report the first observation of the anomalous conductance plateau at G = 0.7 x 2e2/h in a 1D hole system. △ Less

Submitted 25 July, 2005; originally announced July 2005.

Comments: 10 pages, 3 figures