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Channels of oxygen diffusion in single crystal rubrene revealed
Authors:
Robert J. Thompson,
Thomas Bennett,
Sarah Fearn,
Muhammad Kamaludin,
Christian Kloc,
David S. McPhail,
Oleg Mitrofanov,
Neil J. Curson
Abstract:
Electronic devices made from organic materials have the potential to support a more ecologically friendly and affordable future. However, the ability to fabricate devices with well-defined and reproducible electrical and optical properties is hindered by the sensitivity to the presence of chemical impurities. Oxygen in particular is an impurity that can trap electrons and modify conductive propert…
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Electronic devices made from organic materials have the potential to support a more ecologically friendly and affordable future. However, the ability to fabricate devices with well-defined and reproducible electrical and optical properties is hindered by the sensitivity to the presence of chemical impurities. Oxygen in particular is an impurity that can trap electrons and modify conductive properties of some organic materials. Until now the 3-dimensional profiling of oxygen species in organic semiconductors has been elusive and the effect of oxygen remains disputed. In this study we map out high-spatial resolution 3-dimensional distributions of oxygen inclusions near the surface of single crystal rubrene, using Time of Flight Secondary Ion Mass Spectroscopy (TOF-SIMS). Channels of diffused oxygen, 'oxygen pillars', are found extending from uniform oxygen inclusion layers at the surface. These pillars extend to depths in excess of 1.8 μm and act as an entry point for oxygen to diffuse along the ab-plane of the crystal with at least some of the diffused oxygen molecularly binding to rubrene. Our investigation of surfaces at different stages of evolution reveals the extent of oxygen inclusion, which affects rubrene's optical and transport properties, and is consequently of importance for the reliability and longevity of devices.
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Submitted 3 August, 2016; v1 submitted 14 March, 2016;
originally announced March 2016.
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Effects of Lower Symmetry and Dimensionality on Raman Spectra in 2D WSe2
Authors:
Xin Luo,
Yanyuan Zhao,
Jun Zhang,
Minglin Toh,
Christian Kloc,
Qihua Xiong,
Su Ying Quek
Abstract:
We report the observation and interpretation of new Raman peaks in few-layer tungsten diselenide (WSe2), induced by the reduction of symmetry going from 3D to 2D. In general, Raman frequencies in 2D materials follow quite closely the frequencies of corresponding eigenmodes in the bulk. However, while the modes that are Raman active in the bulk are also Raman active in the thin films, the reverse i…
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We report the observation and interpretation of new Raman peaks in few-layer tungsten diselenide (WSe2), induced by the reduction of symmetry going from 3D to 2D. In general, Raman frequencies in 2D materials follow quite closely the frequencies of corresponding eigenmodes in the bulk. However, while the modes that are Raman active in the bulk are also Raman active in the thin films, the reverse is not always true due to the reduced symmetry in thin films. Here, we predict from group theory and density functional calculations that two intra-layer vibrational modes which are Raman inactive in bulk WSe2 in our experimental configuration become Raman active in thin film WSe2, due to reduced symmetry in thin films. This phenomenon explains the Raman peaks we observe experimentally at ~310 cm-1 and 176 cm-1 in thin film WSe2. Interestingly, the bulk mode at ~310 cm-1 that is Raman inactive can in fact be detected in Raman measurements under specific wavelengths of irradiation, suggesting that in this case, crystal symmetry selection rules may be broken due to resonant scattering. Both theory and experiment indicate that the and modes blue-shift with decreasing thickness, which we attribute to surface effects. Our results shed light on a general understanding of the Raman/IR activities of the phonon modes in layered transition metal dichalcogenide materials and their evolution behavior from 3D to 2D.
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Submitted 3 January, 2014;
originally announced January 2014.
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Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2
Authors:
Weijie Zhao,
R. M. Ribeiro,
Minglin Toh,
Alexandra Carvalho,
Christian Kloc,
A. H. Castro Neto,
Goki Eda
Abstract:
It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness re…
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It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness regime. We investigate the conduction band valley structure in few-layer MX2 by examining the temperature-dependent shift of indirect exciton PL. Hihgly anisotropic thermal expansion of the lattice and corresponding evolution of the band structure result in distinct peak shift for indirect transitions involving the K and Λ (midpoint along Γ-K) valleys. We identify the origin of the indirect emission and concurrently determine the relative energy of these valleys. Our results show that the two valleys compete in energy in few-layer WSe2.
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Submitted 4 September, 2013;
originally announced September 2013.
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Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2
Authors:
Weijie Zhao,
Zohreh Ghorannevis,
Amara Kiran Kumar,
**g Ren Pang,
Minglin Toh,
Xin Zhang,
Christian Kloc,
** Heng Tan,
Goki Eda
Abstract:
Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2 in the mono- to few-layer thic…
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Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2 in the mono- to few-layer thickness regime. We show that, similar to the case of MoS2, the characteristic and modes exhibit stiffening and softening with increasing number of layers, respectively, with a small shift of less than 3 cm-1 due to large mass of the atoms. Thickness dependence is also observed in a series of multiphonon bands arising from overtone, combination, and zone edge phonons, whose intensity exhibit significant enhancement in excitonic resonance conditions. Some of these multiphonon peaks are found to be absent only in monolayers. These features provide a unique fingerprint and rapid identification for monolayer flakes.
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Submitted 4 September, 2013; v1 submitted 3 April, 2013;
originally announced April 2013.
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Observation of an in-plane vortex lattice transition in the multiband superconductor 2H-NbSe2 using scanning tunneling spectroscopy
Authors:
I. Fridman,
C. Kloc,
C. Petrovic,
J. Y. T. Wei
Abstract:
We report real-space evidence for an in-plane vortex lattice (VL) transition in the multiband superconductor 2H-NbSe2, observed by laterally imaging subsurface vortices with scanning tunneling spectroscopy. With magnetic field applied || ab-surface up to 6.5 T at 300 mK, spatial maps of the zero-bias conductance revealed a stripe pattern whose dominant periodicity showed a discrete shift near 0.7…
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We report real-space evidence for an in-plane vortex lattice (VL) transition in the multiband superconductor 2H-NbSe2, observed by laterally imaging subsurface vortices with scanning tunneling spectroscopy. With magnetic field applied || ab-surface up to 6.5 T at 300 mK, spatial maps of the zero-bias conductance revealed a stripe pattern whose dominant periodicity showed a discrete shift near 0.7 T. The stripes can be interpreted as the surface projection of a distorted hexagonal VL that undergoes a first-order reorientation transition. This transition occurs for field || [100] but not [110], and is correlated with the multigap characteristics seen in the heat capacity and thermal transport data. These results implicate the multiband pairing of 2H-NbSe2 in the VL transition we observed.
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Submitted 14 March, 2013;
originally announced March 2013.
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Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2
Authors:
Weijie Zhao,
Zohreh Ghorannevis,
Leiqiang Chua,
Minglin Toh,
Christian Kloc,
**-Heng Tan,
Goki Eda
Abstract:
Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap transition when the thickness is reduced to a single monolayer. This leads to remarkable enhancement in the photoluminescence efficiency, which opens up new opp…
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Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap transition when the thickness is reduced to a single monolayer. This leads to remarkable enhancement in the photoluminescence efficiency, which opens up new opportunities for the optoelectronic applications of the material. Here we report differential reflectance and photoluminescence (PL) spectra of mono- to few-layer WS2 and WSe2 that indicate that the band structure of these materials undergoes similar indirect to direct transition when thinned to a single monolayer. Strong enhancement in PL quantum yield is observed for monoayer WS2 and WSe2 due to exciton recombination at the direct band edge. In contrast to natural MoS2 crystals extensively used in recent studies, few-layer WS2 and WSe2 show comparatively strong indirect gap emission along with distinct direct gap hot electron emission, suggesting high quality of synthetic crystals prepared by chemical vapor transport method. Fine absorption and emission features and their thickness dependence suggest strong effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe2.
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Submitted 21 December, 2012;
originally announced December 2012.
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Cryomagnetic scanning tunneling spectroscopy study of multi-gap spectra in superconducting 2H-NbSe2
Authors:
I. Fridman,
C. Kloc,
J. Y. T. Wei
Abstract:
Scanning tunneling spectroscopy was performed on single crystals of superconducting 2H-NbSe2, at 300 mK and in a magnetic field, up to 5 T, applied parallel to the ab-plane. This novel field geometry allows the quasiparticle density-of-states spectrum to be measured under finite superfluid momentum, while avoiding contributions from the vortex-core bound states. At zero field, we observed a fully-…
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Scanning tunneling spectroscopy was performed on single crystals of superconducting 2H-NbSe2, at 300 mK and in a magnetic field, up to 5 T, applied parallel to the ab-plane. This novel field geometry allows the quasiparticle density-of-states spectrum to be measured under finite superfluid momentum, while avoiding contributions from the vortex-core bound states. At zero field, we observed a fully-gapped conductance spectrum with both gap-edge peaks and sub-gap kinks. These spectral features show a systematic evolution with the applied field: the kinks close in while the peaks move apart in low fields, and the zero-bias conductance has a two-sloped behavior over the entire field range, though dip** anomalously at 0.7 T. Our data was analyzed with recent theoretical models for quasiparticle tunneling into a current-carrying superconductor, and yielded distinct evidence for multiple superconducting gaps coming from various Fermi-surface sheets of different topologies, as well as possible implications on the origin of the coexisting charge-density-wave order.
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Submitted 28 October, 2011;
originally announced October 2011.
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Lateral imaging of the superconducting vortex lattice using Doppler-modulated scanning tunneling microscopy
Authors:
I. Fridman,
C. Kloc,
C. Petrovic,
J. Y. T. Wei
Abstract:
By spatially map** the Doppler effect of an in-plane magnetic field on the quasiparticle tunneling spectrum, we have laterally imaged the vortex lattice in superconducting 2H-NbSe2. Cryomagnetic scanning tunneling spectroscopy was performed at 300 mK on the ab-surface oriented parallel to the field H. Conductance images at zero bias show stripe patterns running along H, with the stripe separatio…
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By spatially map** the Doppler effect of an in-plane magnetic field on the quasiparticle tunneling spectrum, we have laterally imaged the vortex lattice in superconducting 2H-NbSe2. Cryomagnetic scanning tunneling spectroscopy was performed at 300 mK on the ab-surface oriented parallel to the field H. Conductance images at zero bias show stripe patterns running along H, with the stripe separation varying as H^-0.5. Regions of higher zero-bias conductance show lower gap-edge conductance, consistent with spectral redistribution by spatially-modulated superfluid momentum. Our results are interpreted in terms of the interaction between vortical and screening currents, and demonstrate a general method for probing subsurface vortices.
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Submitted 21 October, 2011;
originally announced October 2011.
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Large Negative Thermal Expansion in Pentacene due to Steric Hindrance
Authors:
S. Haas,
B. Batlogg,
C. Besnard,
M. Schiltz,
C. Kloc,
T. Siegrist
Abstract:
The uniaxial negative thermal expansion in pentacene crystals along $a$ is a particularity in the series of the oligoacenes, and exeptionally large for a crystalline solid. Full x-ray structure analysis from 120 K to 413 K reveals that the dominant thermal motion is a libration of the rigid molecules about their long axes, modifying the intermolecular angle which describes the herringbone packin…
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The uniaxial negative thermal expansion in pentacene crystals along $a$ is a particularity in the series of the oligoacenes, and exeptionally large for a crystalline solid. Full x-ray structure analysis from 120 K to 413 K reveals that the dominant thermal motion is a libration of the rigid molecules about their long axes, modifying the intermolecular angle which describes the herringbone packing within the layers. This herringbone angle increases with temperature (by 0.3 -- 0.6$^{\circ}$ per 100 K), and causes an anisotropic rearrangement of the molecules within the layers, i.e. an expansion in the $b$ direction, and a distinct contraction along $a$. Additionally, a larger herringbone angle improves the cofacial overlap between adjacent, parallel molecules, and thus enhances the attractive van der Waals forces.
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Submitted 3 July, 2007;
originally announced July 2007.
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Single crystal field-effect transistors based on an organic selenium-containing semiconductor
Authors:
R. Zeis,
Ch. Kloc,
K. Takimiya,
Y. Kunugi,
Y. Konda,
N. Niihara,
T. Otsubo
Abstract:
We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging fr…
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We report on the fabrication and characterization of single crystal field-effect transistors (FETs) based on diphenylbenzo diselenophene (DPh-BDSe). These organic field-effect transistors (OFETs) function as p-channel accumulation-mode devices. At room temperature, for the best devices, the threshold voltage is less than -7V and charge carrier mobility is nearly gate bias independent, ranging from 1cm2/Vs to 1.5 cm2/Vs depending on the source-drain bias. Mobility is increased slightly by cooling below room temperature and decreases below 280 K.
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Submitted 8 November, 2004;
originally announced November 2004.
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Single-crystal field-effect transistors based on copper phthalocyanine
Authors:
Roswitha Zeis,
Theo Siegrist,
Christian Kloc
Abstract:
Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge carrier mobilities of up to 1 cm2/Vs combined with a low field-effect threshold were obtained. These remarkable FET-characteristics, along with the highly stable…
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Copper phthalocyanine (Cu-Pc) single crystals were grown by physical vapor transport and field effect transistors (FETs) on the surface of these crystals were prepared. These FETs function as p-channel accumulation-mode devices. Charge carrier mobilities of up to 1 cm2/Vs combined with a low field-effect threshold were obtained. These remarkable FET-characteristics, along with the highly stable chemical nature of Cu-Pc make it an attractive candidate for device applications.
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Submitted 14 September, 2004;
originally announced September 2004.
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Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides
Authors:
V. Podzorov,
M. E. Gershenson,
Ch. Kloc,
R. Zeis,
E. Bucher
Abstract:
We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity…
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We report on fabrication of novel field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/Vs for the p-type conductivity in the WSe2-based FETs at room temperature). These novel FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in "flexible" electronics.
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Submitted 14 January, 2004;
originally announced January 2004.
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6,13-dihydropentacene and pentacene single co-crystals
Authors:
Christine C. Mattheus,
Jakob Baas,
Auke Meetsma,
Jan L. de Boer,
Christian Kloc,
Theo Siegrist,
Thomas T. M. Palstra
Abstract:
6,13-dihydropentacene and pentacene co-crystallise in a ratio of 2:1 during vapour transport of commercial pentacene in a gas flow. The crystal structure is monoclinic P2_1/n and contains one dihydropentacene molecule, and half a pentacene molecule in the asymmetric unit.
6,13-dihydropentacene and pentacene co-crystallise in a ratio of 2:1 during vapour transport of commercial pentacene in a gas flow. The crystal structure is monoclinic P2_1/n and contains one dihydropentacene molecule, and half a pentacene molecule in the asymmetric unit.
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Submitted 10 October, 2002;
originally announced October 2002.
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Free and Trapped Injected Carriers in C60 Crystals
Authors:
V. Y. Butko,
A. P. Ramirez,
C. Kloc
Abstract:
We report on the conductance from two-contact carrier injection in C60 single crystals. In the nonlinear regime, the current and voltage obey a power law, I \~ V^m, where m can be as high as 10 at room temperature. This nonlinear behavior - the resistance decreases by 6 orders of magnitude without saturation - is among the highest reported for organic systems, and can be explained by injection o…
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We report on the conductance from two-contact carrier injection in C60 single crystals. In the nonlinear regime, the current and voltage obey a power law, I \~ V^m, where m can be as high as 10 at room temperature. This nonlinear behavior - the resistance decreases by 6 orders of magnitude without saturation - is among the highest reported for organic systems, and can be explained by injection of free carriers into the trap-filling region. We find that H2 annealing suppresses shallow traps and enhances nonlinearity. Two limiting types of temperature dependence of the nonlinear resistance are observed - decreasing and increasing resistance at the orientational ordering temperature. A simple model incorporating deep traps is presented to understand this behavior and the impact of this model on possible field-effect transistor action is discussed.
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Submitted 1 October, 2002;
originally announced October 2002.
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Magnon Dam** by magnon-phonon coupling in Manganese Perovskites
Authors:
Pengcheng Dai,
H. Y. Hwang,
Jiandi Zhang,
J. A. Fernandez-Baca,
S-W. Cheong,
C. Kloc,
Y. Tomioka,
Y. Tokura
Abstract:
Inelastic neutron scattering was used to systematically investigate the spin-wave excitations (magnons) in ferromagnetic manganese perovskites. In spite of the large differences in the Curie temperatures ($T_C$s) of different manganites, their low-temperature spin waves were found to have very similar dispersions with the zone boundary magnon softening. From the wavevector dependence of the magn…
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Inelastic neutron scattering was used to systematically investigate the spin-wave excitations (magnons) in ferromagnetic manganese perovskites. In spite of the large differences in the Curie temperatures ($T_C$s) of different manganites, their low-temperature spin waves were found to have very similar dispersions with the zone boundary magnon softening. From the wavevector dependence of the magnon lifetime effects and its correlation with the dispersions of the optical phonon modes, we argue that a strong magneto-elastic coupling is responsible for the observed low temperature anomalous spin dynamical behavior of the manganites.
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Submitted 26 April, 1999;
originally announced April 1999.
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Evolution of the low-frequency spin dynamics in ferromagnetic manganites
Authors:
J. A. Fernandez-Baca,
P. Dai,
H. Y. Hwang,
S-W. Cheong,
C. Kloc
Abstract:
Elastic and inelastic neutron scattering was used to study two ferromagnetic manganites A$_{1-x}$B$_{x}$MnO$_3$ (x $\approx$ 0.3) with $T_c$=197.9 K and 300.9 K. The spin dynamical behavior of these is similar at low temperatures, but drastically different at temperatures around $T_c$. While the formation of spin clusters of size ($\sim20$ Å) dominates the spin dynamics of the 197.9 K sample clo…
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Elastic and inelastic neutron scattering was used to study two ferromagnetic manganites A$_{1-x}$B$_{x}$MnO$_3$ (x $\approx$ 0.3) with $T_c$=197.9 K and 300.9 K. The spin dynamical behavior of these is similar at low temperatures, but drastically different at temperatures around $T_c$. While the formation of spin clusters of size ($\sim20$ Å) dominates the spin dynamics of the 197.9 K sample close to $T_c$, the paramagnetic to ferromagnetic transition for the 300.9 K sample is more conventional. These results, combined with seemingly inconsistent earlier reports, reveal clear systematics in the spin dynamics of the manganites.
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Submitted 15 October, 1997;
originally announced October 1997.
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Less than 50% sublattice polarization in an insulating S=3/2 kagome' antiferromagnet at low T
Authors:
S. -H. Lee,
C. Broholm,
M. F. Collins,
L. Heller,
A. P. Ramirez,
C. Kloc,
E. Bucher,
R. W. Erwin,
N. Lacevic
Abstract:
We have found weak long range antiferromagnetic order in the quasi-two-dimensional insulating oxide $ KCr_3(OD)_6(SO_4)_2$ which contains Cr$^{3+}$ S=3/2 ions on a kagomé lattice. In a sample with $\approx$ 76% occupancy of the chromium sites the ordered moment is 1.1(3)$μ_B$ per chromium ion which is only one third of the Néel value $gμ_BS=3μ_B$. The magnetic unit cell equals the chemical unit…
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We have found weak long range antiferromagnetic order in the quasi-two-dimensional insulating oxide $ KCr_3(OD)_6(SO_4)_2$ which contains Cr$^{3+}$ S=3/2 ions on a kagomé lattice. In a sample with $\approx$ 76% occupancy of the chromium sites the ordered moment is 1.1(3)$μ_B$ per chromium ion which is only one third of the Néel value $gμ_BS=3μ_B$. The magnetic unit cell equals the chemical unit cell, a situation which is favored by inter-plane interactions. Gapless quantum spin-fluctuations ($Δ/k_B <0.25$K) with a bandwidth of 60K >> $T_N$ = 1.6K are the dominant contribution to the spin correlation function, $S(Q,ω)$ in the ordered phase.
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Submitted 1 May, 1997;
originally announced May 1997.
