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Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
Authors:
M. Hollenbach,
N. Klingner,
P. Mazarov,
W. Pilz,
A. Nadzeyka,
F. Mayer,
N. V. Abrosimov,
L. Bischoff,
G. Hlawacek,
M. Helm,
G. V. Astakhov
Abstract:
Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creat…
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Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.
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Submitted 30 April, 2024;
originally announced April 2024.
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Roadmap for focused ion beam technologies
Authors:
Katja Höflich,
Gerhard Hobler,
Frances I. Allen,
Tom Wirtz,
Gemma Rius,
Lisa McElwee-White,
Arkady V. Krasheninnikov,
Matthias Schmidt,
Ivo Utke,
Nico Klingner,
Markus Osenberg,
Rosa Córdoba,
Flyura Djurabekova,
Ingo Manke,
Philip Moll,
Mariachiara Manoccio,
José Marıa De Teresa,
Lothar Bischoff,
Johann Michler,
Olivier De Castro,
Anne Delobbe,
Peter Dunne,
Oleksandr V. Dobrovolskiy,
Natalie Frese,
Armin Gölzhäuser
, et al. (7 additional authors not shown)
Abstract:
The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in mat…
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The focused ion beam (FIB) is a powerful tool for the fabrication, modification and characterization of materials down to the nanoscale. Starting with the gallium FIB, which was originally intended for photomask repair in the semiconductor industry, there are now many different types of FIB that are commercially available. These instruments use a range of ion species and are applied broadly in materials science, physics, chemistry, biology, medicine, and even archaeology. The goal of this roadmap is to provide an overview of FIB instrumentation, theory, techniques and applications. By viewing FIB developments through the lens of the various research communities, we aim to identify future pathways for ion source and instrumentation development as well as emerging applications, and the scope for improved understanding of the complex interplay of ion-solid interactions. We intend to provide a guide for all scientists in the field that identifies common research interests and will support future fruitful interactions connecting tool development, experiment and theory. While a comprehensive overview of the field is sought, it is not possible to cover all research related to FIB technologies in detail. We give examples of specific projects within the broader context, referencing original works and previous review articles throughout.
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Submitted 6 October, 2023; v1 submitted 31 May, 2023;
originally announced May 2023.
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Universal radiation tolerant semiconductor
Authors:
Alexander Azarov,
Javier García Fernández,
Junlei Zhao,
Flyura Djurabekova,
Huan He,
Ru He,
Øystein Prytz,
Lasse Vines,
Umutcan Bektas,
Paul Chekhonin,
Nico Klingner,
Gregor Hlawacek,
Andrej Kuznetsov
Abstract:
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Speci…
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Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with either very high disorder levels or amorphization. Here we show that gamma/beta double polymorph Ga2O3 structures exhibit remarkably high radiation tolerance. Specifically, for room temperature experiments, they tolerate a disorder equivalent to hundreds of displacements per atom, without severe degradations of crystallinity; in comparison with, e.g., Si amorphizable already with the lattice atoms displaced just once. We explain this behavior by an interesting combination of the Ga- and O- sublattice properties in gamma-Ga2O3. In particular, O-sublattice exhibits a strong recrystallization trend to recover the face-centered-cubic stacking despite the stronger displacement of O atoms compared to Ga during the active periods of cascades. Notably, we also explained the origin of the beta-to-gamma Ga2O3 transformation, as a function of the increased disorder in beta-Ga2O3 and studied the phenomena as a function of the chemical nature of the implanted atoms. As a result, we conclude that gamma/beta double polymorph Ga2O3 structures, in terms of their radiation tolerance properties, benchmark a class of universal radiation tolerant semiconductors.
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Submitted 14 August, 2023; v1 submitted 23 March, 2023;
originally announced March 2023.
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Wafer-scale nanofabrication of telecom single-photon emitters in silicon
Authors:
M. Hollenbach,
N. Klingner,
N. S. Jagtap,
L. Bischoff,
C. Fowley,
U. Kentsch,
G. Hlawacek,
A. Erbe,
N. V. Abrosimov,
M. Helm,
Y. Berencén,
G. V. Astakhov
Abstract:
A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been re…
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A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.
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Submitted 27 April, 2022;
originally announced April 2022.
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Effects of Alloying Elements on Surface Oxides of Hot-Dip Galvanized Press Hardened Steel
Authors:
Wolfgang Gaderbauer,
Martin Arndt,
Tia Truglas,
Thomas Steck,
Nico Klingner,
David Stifter,
Josef Faderl,
Heiko Groiss
Abstract:
Effects of steel alloying elements on the formation of the surface oxide layer of hot-dip galvanized press hardened steel after austenitization annealing were examined with various advanced microscopy and spectroscopy techniques. The main oxides on top of the original thin Al2O3 layer, originating from the primary galvanizing process, are identified as ZnO and (Mn,Zn)Mn2O4 spinel. For some of the…
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Effects of steel alloying elements on the formation of the surface oxide layer of hot-dip galvanized press hardened steel after austenitization annealing were examined with various advanced microscopy and spectroscopy techniques. The main oxides on top of the original thin Al2O3 layer, originating from the primary galvanizing process, are identified as ZnO and (Mn,Zn)Mn2O4 spinel. For some of the investigated steel alloys, a non-uniform, several nanometer thick Cr enriched, additional film was found at the Al2O3 layer. At a sufficiently high concentration, Cr can act as a substitute for Al during annealing, strengthening and regenerating the original Al2O3 layer with Cr2O3. Further analysis with secondary ion mass spectrometry allowed a reliable distinction between ZnO and Zn(OH)2.
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Submitted 2 July, 2020;
originally announced July 2020.
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Boron Liquid Metal Alloy Ion Sources For Special FIB Applications
Authors:
Lothar Bischoff,
Nico Klingner,
Paul Mazarov,
Wolfgang Pilz,
Florian Meyer
Abstract:
Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototy** on the micro and nanometer scale and below. Among other concepts, liquid metal alloy ion sources (LMAIS) are one of the alternatives to conventional gallium beams to extend the FIB application field. To meet the rising demand f…
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Focused Ion Beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototy** on the micro and nanometer scale and below. Among other concepts, liquid metal alloy ion sources (LMAIS) are one of the alternatives to conventional gallium beams to extend the FIB application field. To meet the rising demand for light ions, different boron containing alloys were investigated in this work. A promising solution was found in a Co31Nd64B5 based LMAIS which will be introduced in more detail. Besides cobalt as a ferromagnetic element and the rare earth element neodymium, boron in particular is of interest for special FIB applications like local p-type do**, for which resolution of about 30 nm has been achieved so far.
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Submitted 27 April, 2020;
originally announced April 2020.
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Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm
Authors:
Xiaomo Xu,
Karl-Heinz Heinig,
Wolfhard Möller,
Hans-Jürgen Engelmann,
Nico Klingner,
Ahmed Gharbi,
Raluca Tiron,
Johannes von Borany,
Gregor Hlawacek
Abstract:
Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dyna…
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Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne$^+$ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dynamic annealing. While at room temperature, the nanopillars evolve to a conical shape due to ion-induced plastic deformation and viscous flow of amorphized Si, simultaneous dynamic annealing during the irradiation at elevated temperatures prevents amorphization which is necessary for the viscous flow. Above the critical temperature of ion-induced amorphization, a steady decrease of the diameter was observed as a result of the dominating forward sputtering process through the nanopillar sidewalls. Under these conditions the nanopillars can be thinned down to a diameter of 10 nm in a well-controlled manner. A deeper understanding of the pillar thinning process has been achieved by a comparison of experimental results with 3D computer simulations based on the binary collision approximation.
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Submitted 1 October, 2019; v1 submitted 24 June, 2019;
originally announced June 2019.
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Nanometer scale elemental analysis in the helium ion microscope using time of flight spectrometry
Authors:
Nico Klingner,
René Heller,
Gregor Hlawacek,
Johannes von Borany,
John Notte,
Jason Huang,
Stefan Facsko
Abstract:
Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale. A lateral resolution of $\leq$ 54 nm and a time resolution of $Δt \leq$ 17 ns $(Δt/t \leq 5.4\%)$ are achieved. By using the energy of the back…
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Time of flight backscattering spectrometry (ToF-BS) was successfully implemented in a helium ion microscope (HIM). Its integration introduces the ability to perform laterally resolved elemental analysis as well as elemental depth profiling on the nm scale. A lateral resolution of $\leq$ 54 nm and a time resolution of $Δt \leq$ 17 ns $(Δt/t \leq 5.4\%)$ are achieved. By using the energy of the backscattered particles for contrast generation, we introduce a new imaging method to the HIM allowing direct elemental map** as well as local spectrometry. In addition laterally resolved time of flight secondary ion mass spectrometry (ToF-SIMS) can be performed with the same setup. Time of flight is implemented by pulsing the primary ion beam. This is achieved in a cost effective and minimal invasive way that does not influence the high resolution capabilities of the microscope when operating in standard secondary electron (SE) imaging mode. This technique can thus be easily adapted to existing devices. The particular implementation of ToF-BS and ToF-SIMS techniques are described, results are presented and advantages, difficulties and limitations of this new techniques are discussed.
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Submitted 30 November, 2015; v1 submitted 15 October, 2015;
originally announced October 2015.
