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Morphology and chemical composition of cobalt germanide islands on Ge(001): in-situ nanoscale insights into contact formation for Ge-based device technology
Authors:
M. Ewert,
Th. Schmidt,
J. I. Flege,
I. Heidmann,
T. Grzela,
W. M. Klesse,
M. Foerster,
L. Aballe,
T. Schroeder,
J. Falta
Abstract:
The reactive growth of cobalt germanide on Ge(001) was investigated by means of in-situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction ($μ$-LEED), and ex-situ atomic force microscopy (AFM). At a Co deposition temperature of 670°C, a rich morphology with different island shapes and dimensions is observed, and a correlat…
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The reactive growth of cobalt germanide on Ge(001) was investigated by means of in-situ x-ray absorption spectroscopy photoemission electron microscopy (XAS-PEEM), micro-illumination low-energy electron diffraction ($μ$-LEED), and ex-situ atomic force microscopy (AFM). At a Co deposition temperature of 670°C, a rich morphology with different island shapes and dimensions is observed, and a correlation between island morphology and stoichiometry is found. Combining XAS-PEEM and $μ$-LEED, we were able to identify a large part of the islands to consist of CoGe$_2$, with many of them having an unusual epitaxial relationship: CoGe$_2$[$\bar110$](111) $\parallel$ Ge[$\bar110$](001). Side facets with (112) and (113) orientation have been found for such islands. However, two additional phases were observed, most likely Co$_5$Ge$_7$ and CoGe. The occurrence of these intermediate phases is promoted by defects, as revealed by comparing growth on Ge(001) single crystals and on Ge(001)/Si(001) epilayer substrates.
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Submitted 15 February, 2016;
originally announced February 2016.
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Bottom-up assembly of metallic germanium
Authors:
G. Scappucci,
W. M. Klesse,
L. A. Yeoh,
D. J. Carter,
O. Warschkow,
N. A. Marks,
D. L. Jaeger,
G. Capellini,
M. Y. Simmons,
A. R. Hamilton
Abstract:
Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is…
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Extending chip performance beyond current limits of miniaturisation requires new materials and functionalities that integrate well with the silicon platform. Germanium fits these requirements and has been proposed as a high-mobility channel material,[1] a light emitting medium in silicon-integrated lasers,[2,3] and a plasmonic conductor for bio-sensing.[4,5] Common to these diverse applications is the need for homogeneous, high electron densities in three-dimensions (3D). Here we use a bottom-up approach to demonstrate the 3D assembly of atomically sharp do** profiles in germanium by a repeated stacking of two-dimensional (2D) high-density phosphorus layers. This produces high-density (10^19 to 10^20 cm-3) low-resistivity (10^-4 Ohmcm) metallic germanium of precisely defined thickness, beyond the capabilities of diffusion-based do** technologies.[6] We demonstrate that free electrons from distinct 2D dopant layers coalesce into a homogeneous 3D conductor using anisotropic quantum interference measurements, atom probe tomography, and density functional theory.
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Submitted 20 March, 2015;
originally announced March 2015.
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Spontaneous breaking of time reversal symmetry in strongly interacting two dimensional electron layers in silicon and germanium
Authors:
S. Shamim,
S. Mahapatra,
G. Scappucci,
W. M. Klesse,
M. Y. Simmons,
A. Ghosh
Abstract:
We report experimental evidence of a remarkable spontaneous time reversal symmetry breaking in two dimensional electron systems formed by atomically confined do** of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing do** in…
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We report experimental evidence of a remarkable spontaneous time reversal symmetry breaking in two dimensional electron systems formed by atomically confined do** of phosphorus (P) atoms inside bulk crystalline silicon (Si) and germanium (Ge). Weak localization corrections to the conductivity and the universal conductance fluctuations were both found to decrease rapidly with decreasing do** in the Si:P and Ge:P $δ-$layers, suggesting an effect driven by Coulomb interactions. In-plane magnetotransport measurements indicate the presence of intrinsic local spin fluctuations at low do**, providing a microscopic mechanism for spontaneous lifting of the time reversal symmetry. Our experiments suggest the emergence of a new many-body quantum state when two dimensional electrons are confined to narrow half-filled impurity bands.
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Submitted 2 April, 2014;
originally announced April 2014.
