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Photoinduced tunability of the Reststrahlen band in 4H-SiC
Authors:
Bryan T. Spann,
Ryan Compton,
Daniel Ratchford,
James P. Long,
Adam D. Dunkelberger,
Paul B. Klein,
Alexander J. Giles,
Joshua D. Caldwell,
Jeffrey C. Owrutsky
Abstract:
Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to $actively$ tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the "Reststrahlen band" wher…
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Materials with a negative dielectric permittivity (e.g. metals) display high reflectance and can be shaped into nanoscale optical-resonators exhibiting extreme mode confinement, a central theme of nanophotonics. However, the ability to $actively$ tune these effects remains elusive. By photoexciting free carriers in 4H-SiC, we induce dramatic changes in reflectance near the "Reststrahlen band" where the permittivity is negative due to charge oscillations of the polar optical phonons in the mid-infrared. We infer carrier-induced changes in the permittivity required for useful tunability (~ 40 cm$^{-1}$) in nanoscale resonators, providing a direct avenue towards the realization of actively tunable nanophotonic devices in the mid-infrared to terahertz spectral range.
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Submitted 30 November, 2015;
originally announced November 2015.
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High purity semi-insulating 4H-SiC epitaxial layers by Defect-Competition Epitaxy
Authors:
MVS Chandrashekhar,
Iftekhar Chowdhury,
P. Kaminski,
R. Kozlowski,
P. B. Klein,
Tangali Sudarshan
Abstract:
Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra betweenlow-dopedepilayers grown at C/Si ratio<1.3andSI-epilayers grown at C/Si ratio>1.3 showed little difference in residual impurity concentrations. A reconciliation of imp…
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Thick, high-purity semi-insulating (SI)homoepitaxial layers on Si-face 4H-SiC weregrownsystematically, with resistivity \geq 109Ω-cmby maintaining high C/Si ratios 1.3-15 during growth.Comparison of secondary ion mass spectra betweenlow-dopedepilayers grown at C/Si ratio<1.3andSI-epilayers grown at C/Si ratio>1.3 showed little difference in residual impurity concentrations. A reconciliation of impurity concentration with measured resistivity indicated a compensating trap concentration of ~1015cm-3present only in the SI-epilayers. High- resolution photo induced transient spectroscopy (HRPITS) identified themas Si-vacancy related deep centers, with no detectable EH6/7 and Z1/2levels. Recombination lifetimes ~5ns suggest application in fast-switching power devices.
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Submitted 22 April, 2011;
originally announced April 2011.
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High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor
Authors:
Iftekhar Chowdhury,
MVS Chandrasekhar,
Paul B Klein,
Joshua D. Caldwell,
Tangali Sudarshan
Abstract:
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl2, which is the predominant growth species in chlorinated chemistries. A specular surface…
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Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 \mum/hr, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with do** concentrations < 1x1014 cm-3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (\muPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 \mus.
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Submitted 3 November, 2010;
originally announced November 2010.
