Showing 1–17 of 17 results for author: Klein, L J

Aboveground carbon biomass estimate with Physics-informed deep network

Authors: Juan Nathaniel, Levente J. Klein, Campbell D. Watson, Gabrielle Nyirjesy, Conrad M. Albrecht

Abstract: The global carbon cycle is a key process to understand how our climate is changing. However, monitoring the dynamics is difficult because a high-resolution robust measurement of key state parameters including the aboveground carbon biomass (AGB) is required. Here, we use deep neural network to generate a wall-to-wall map of AGB within the Continental USA (CONUS) with 30-meter spatial resolution fo… ▽ More The global carbon cycle is a key process to understand how our climate is changing. However, monitoring the dynamics is difficult because a high-resolution robust measurement of key state parameters including the aboveground carbon biomass (AGB) is required. Here, we use deep neural network to generate a wall-to-wall map of AGB within the Continental USA (CONUS) with 30-meter spatial resolution for the year 2021. We combine radar and optical hyperspectral imagery, with a physical climate parameter of SIF-based GPP. Validation results show that a masked variation of UNet has the lowest validation RMSE of 37.93 $\pm$ 1.36 Mg C/ha, as compared to 52.30 $\pm$ 0.03 Mg C/ha for random forest algorithm. Furthermore, models that learn from SIF-based GPP in addition to radar and optical imagery reduce validation RMSE by almost 10% and the standard deviation by 40%. Finally, we apply our model to measure losses in AGB from the recent 2021 Caldor wildfire in California, and validate our analysis with Sentinel-based burn index. △ Less

Submitted 24 October, 2022; originally announced October 2022.

Comments: 6 pages, 5 figures

AutoGeoLabel: Automated Label Generation for Geospatial Machine Learning

Authors: Conrad M Albrecht, Fernando Marianno, Levente J Klein

Abstract: A key challenge of supervised learning is the availability of human-labeled data. We evaluate a big data processing pipeline to auto-generate labels for remote sensing data. It is based on rasterized statistical features extracted from surveys such as e.g. LiDAR measurements. Using simple combinations of the rasterized statistical layers, it is demonstrated that multiple classes can be generated a… ▽ More A key challenge of supervised learning is the availability of human-labeled data. We evaluate a big data processing pipeline to auto-generate labels for remote sensing data. It is based on rasterized statistical features extracted from surveys such as e.g. LiDAR measurements. Using simple combinations of the rasterized statistical layers, it is demonstrated that multiple classes can be generated at accuracies of ~0.9. As proof of concept, we utilize the big geo-data platform IBM PAIRS to dynamically generate such labels in dense urban areas with multiple land cover classes. The general method proposed here is platform independent, and it can be adapted to generate labels for other satellite modalities in order to enable machine learning on overhead imagery for land use classification and object detection. △ Less

Submitted 31 January, 2022; originally announced February 2022.

ACM Class: I.5.4; I.5.2; I.2.10

Journal ref: 2021 IEEE International Conference on Big Data (Big Data), pp. 1779-1786. IEEE, 2021

S3RP: Self-Supervised Super-Resolution and Prediction for Advection-Diffusion Process

Authors: Chulin Wang, Kyongmin Yeo, Xiao **, Andres Codas, Levente J. Klein, Bruce Elmegreen

Abstract: We present a super-resolution model for an advection-diffusion process with limited information. While most of the super-resolution models assume high-resolution (HR) ground-truth data in the training, in many cases such HR dataset is not readily accessible. Here, we show that a Recurrent Convolutional Network trained with physics-based regularizations is able to reconstruct the HR information wit… ▽ More We present a super-resolution model for an advection-diffusion process with limited information. While most of the super-resolution models assume high-resolution (HR) ground-truth data in the training, in many cases such HR dataset is not readily accessible. Here, we show that a Recurrent Convolutional Network trained with physics-based regularizations is able to reconstruct the HR information without having the HR ground-truth data. Moreover, considering the ill-posed nature of a super-resolution problem, we employ the Recurrent Wasserstein Autoencoder to model the uncertainty. △ Less

Submitted 8 November, 2021; originally announced November 2021.

Comments: 9 pages, 8 figures

Journal ref: Neural Information Processing Systems (NeurIPS 2021) Workshop

Quantification of Carbon Sequestration in Urban Forests

Authors: Levente J. Klein, Wang Zhou, Conrad M. Albrecht

Abstract: Vegetation, trees in particular, sequester carbon by absorbing carbon dioxide from the atmosphere. However, the lack of efficient quantification methods of carbon stored in trees renders it difficult to track the process. We present an approach to estimate the carbon storage in trees based on fusing multi-spectral aerial imagery and LiDAR data to identify tree coverage, geometric shape, and tree s… ▽ More Vegetation, trees in particular, sequester carbon by absorbing carbon dioxide from the atmosphere. However, the lack of efficient quantification methods of carbon stored in trees renders it difficult to track the process. We present an approach to estimate the carbon storage in trees based on fusing multi-spectral aerial imagery and LiDAR data to identify tree coverage, geometric shape, and tree species -- key attributes to carbon storage quantification. We demonstrate that tree species information and their three-dimensional geometric shapes can be estimated from aerial imagery in order to determine the tree's biomass. Specifically, we estimate a total of $52,000$ tons of carbon sequestered in trees for New York City's borough Manhattan. △ Less

Submitted 20 July, 2021; v1 submitted 31 May, 2021; originally announced June 2021.

Journal ref: International Conference on Machine Learning (ICML 2021) Workshop

PAIRS AutoGeo: an Automated Machine Learning Framework for Massive Geospatial Data

Authors: Wang Zhou, Levente J. Klein, Siyuan Lu

Abstract: An automated machine learning framework for geospatial data named PAIRS AutoGeo is introduced on IBM PAIRS Geoscope big data and analytics platform. The framework simplifies the development of industrial machine learning solutions leveraging geospatial data to the extent that the user inputs are minimized to merely a text file containing labeled GPS coordinates. PAIRS AutoGeo automatically gathers… ▽ More An automated machine learning framework for geospatial data named PAIRS AutoGeo is introduced on IBM PAIRS Geoscope big data and analytics platform. The framework simplifies the development of industrial machine learning solutions leveraging geospatial data to the extent that the user inputs are minimized to merely a text file containing labeled GPS coordinates. PAIRS AutoGeo automatically gathers required data at the location coordinates, assembles the training data, performs quality check, and trains multiple machine learning models for subsequent deployment. The framework is validated using a realistic industrial use case of tree species classification. Open-source tree species data are used as the input to train a random forest classifier and a modified ResNet model for 10-way tree species classification based on aerial imagery, which leads to an accuracy of $59.8\%$ and $81.4\%$, respectively. This use case exemplifies how PAIRS AutoGeo enables users to leverage machine learning without extensive geospatial expertise. △ Less

Submitted 12 December, 2020; originally announced December 2020.

Journal ref: IEEE International Conference on Big Data (IEEE BigData 2020)

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

Authors: C. B. Simmons, Teck Seng Koh, Nakul Shaji, Madhu Thalakulam, L. J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, Robert Joynt, Robert Blick, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when… ▽ More We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed. △ Less

Submitted 5 April, 2011; v1 submitted 31 August, 2010; originally announced August 2010.

Comments: published version, 18 pages

Journal ref: Phys. Rev. B 82, 245312 (2010)

Coherence properties of infrared thermal emission from heated metallic nanowires

Authors: Levente J. Klein, Hendrik F. Hamann, Yat-Yin Au, Snorri Ingvarsson

Abstract: Coherence properties of the infrared thermal radiation from individual heated nanowires are investigated as function of nanowire dimensions. Interfering the thermally induced radiation from a heated nanowire with its image in a nearby moveable mirror, well-defined fringes are observed. From the fringe visibility, the coherence length of the thermal emission radiation from the narrowest nanowires… ▽ More Coherence properties of the infrared thermal radiation from individual heated nanowires are investigated as function of nanowire dimensions. Interfering the thermally induced radiation from a heated nanowire with its image in a nearby moveable mirror, well-defined fringes are observed. From the fringe visibility, the coherence length of the thermal emission radiation from the narrowest nanowires was estimated to be at least 20 um which is much larger than expected from a classical blackbody radiator. A significant increase in coherence and emission efficiency is observed for smaller nanowires. △ Less

Submitted 14 May, 2008; originally announced May 2008.

Comments: 4 pages,figures included

Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Authors: C. B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R. H. Blick, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson

Abstract: Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single… ▽ More Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot. △ Less

Submitted 1 November, 2007; v1 submitted 19 October, 2007; originally announced October 2007.

Comments: 3 pages, 3 figures, accepted version, to appear in Applied Physics Letters

Journal ref: Appl Phys Lett (2007) vol. 91 pp. 213103

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Authors: Nakul Shaji, C. B. Simmons, Madhu Thalakulam, Levente J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N. Coppersmith, M. A. Eriksson

Abstract: Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in… ▽ More Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics. △ Less

Submitted 11 December, 2008; v1 submitted 6 August, 2007; originally announced August 2007.

Comments: Published version. Supplementary Information in appendices

Journal ref: Nature Physics v4, pp540-544 (2008)

Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot

Authors: Levente J. Klein, Donald E. Savage, Mark A. Eriksson

Abstract: Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward a dot strongly coupled to the leads. In addition to Coulomb blockade, when the dot is strongly coupled to the leads, we observe the appearance of a zero bias… ▽ More Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward a dot strongly coupled to the leads. In addition to Coulomb blockade, when the dot is strongly coupled to the leads, we observe the appearance of a zero bias conductance peak due to the Kondo effect. The Kondo peak splits in a magnetic field, and the splitting scales linearly with the applied field. We also observe a transition from pure Coulomb blockade to peaks with a Fano lineshape. △ Less

Submitted 15 December, 2006; originally announced December 2006.

Comments: 5 pages, 3 figures, to appear in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 90, 033103 (2007)

Controllable valley splitting in silicon quantum devices

Authors: Srijit Goswami, K. A. Slinker, Mark Friesen, L. M. McGuire, J. L. Truitt, Charles Tahan, L. J. Klein, J. O. Chu, P. M. Mooney, D. W. van der Weide, Robert Joynt, S. N. Coppersmith, Mark A. Eriksson

Abstract: Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived sp… ▽ More Silicon has many attractive properties for quantum computing, and the quantum dot architecture is appealing because of its controllability and scalability. However, the multiple valleys in the silicon conduction band are potentially a serious source of decoherence for spin-based quantum dot qubits. Only when these valleys are split by a large energy does one obtain well-defined and long-lived spin states appropriate for quantum computing. Here we show that the small valley splittings observed in previous experiments on Si/SiGe heterostructures result from atomic steps at the quantum well interface. Lateral confinement in a quantum point contact limits the electron wavefunctions to several steps, and enhances the valley splitting substantially, up to 1.5 meV. The combination of electronic and magnetic confinement produces a valley splitting larger than the spin splitting, which is controllable over a wide range. These results improve the outlook for realizing spin qubits with long coherence times in silicon-based devices. △ Less

Submitted 13 July, 2007; v1 submitted 8 November, 2006; originally announced November 2006.

Comments: Published version, including supplementary materials

Journal ref: Nature Physics v3, p41 (2007)

Elastically Relaxed Free-standing Strained-Si Nanomembranes

Authors: Michelle M. Roberts, Levente J. Klein, Don E. Savage, Keith A. Slinker, Mark Friesen, George Celler, Mark A. Eriksson, Max G. Lagally

Abstract: Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain, by fabricating membranes in which the final strain stat… ▽ More Strain plays a critical role in the properties of materials. In silicon and silicon-germanium, strain provides a mechanism for control of both carrier mobility and band offsets. In materials integra-tion, strain is typically tuned through the use of dislocations and elemental composition. We demonstrate a versatile method to control strain, by fabricating membranes in which the final strain state is controlled by elastic strain sharing, i.e., without the formation of defects. We grow Si/SiGe layers on a substrate from which they can be released, forming nanomembranes. X-ray diffraction measurements confirm a final strain predicted by elasticity theory. The effec-tiveness of elastic strain to alter electronic properties is demonstrated by low-temperature longi-tudinal-Hall effect measurements on a strained-Si quantum well before and after release. Elastic strain sharing and film transfer offers an intriguing path towards complex, multiple-layer struc-tures in which each layer's properties are controlled elastically, without the introduction of unde-sirable defects. △ Less

Submitted 15 June, 2006; originally announced June 2006.

Comments: 8 pages, published version

Journal ref: Nature Materials v5, p388 (2006)

Quantum dots in Si/SiGe 2DEGs with Schottky top-gated leads

Authors: K A Slinker, K L M Lewis, C C Haselby, S Goswami, L J Klein, J O Chu, S N Coppersmith, Robert Joynt, R H Blick, Mark Friesen, M A Eriksson

Abstract: We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the t… ▽ More We report on the fabrication and characterization of quantum dot devices in a Schottky-gated silicon/silicon-germanium two-dimensional electron gas (2DEG). The dots are confined laterally inside an etch-defined channel, while their potential is modulated by an etch-defined 2DEG gate in the plane of the dot. For the first time in this material, Schottky top gates are used to define and tune the tunnel barriers of the dot. The leakage current from the gates is reduced by minimizing their active area. Further suppression of the leakage is achieved by increasing the etch depth of the channel. The top gates are used to put the dot into the Coulomb blockade regime, and conductance oscillations are observed as the voltage on the side gate is varied. △ Less

Submitted 16 August, 2005; v1 submitted 3 August, 2005; originally announced August 2005.

Comments: New Fig. 1, submitted to New Journal of Physics

Journal ref: New Journal of Physics v7, p246 (2005)

Quantum Dots and Etch-Induced Depletion of a Silicon 2DEG

Authors: L. J. Klein, K. L. M. Lewis, K. A. Slinker, Srijit Goswami, D. W. van der Weide, R. H. Blick, P. M. Mooney, J. O. Chu, S. N. Coppersmith, Mark Friesen, Mark A. Eriksson

Abstract: The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in… ▽ More The controlled depletion of electrons in semiconductors is the basis for numerous devices. Reactive-ion etching provides an effective technique for fabricating both classical and quantum devices. However, Fermi level pinning can occur, and must be carefully considered in the development of small devices, such as quantum dots. Because of depletion, the electrical size of the device is reduced in comparison with its physical dimension. To investigate this issue, we fabricate several types of devices in silicon-germanium heterostructures using two different etches, CF$_4$ and SF$_6$. We estimate the depletion width associated with each etch by two methods: (i) conductance measurements in etched wires of decreasing thickness (to determine the onset of depletion), (ii) capacitance measurements of quantum dots (to estimate the size of the active region). We find that the SF$_6$ etch causes a much smaller depletion width, making it more suitable for device fabrication. △ Less

Submitted 31 March, 2005; originally announced March 2005.

Comments: 7 pages, 10 figures

Journal ref: Journal of Applied Physics v99, p023509 (2006)

Electron spin coherence in Si/SiGe quantum wells

Authors: J. L. Truitt, K. A. Slinker, K. L. M. Lewis, D. E. Savage, Charles Tahan, L. J. Klein, Robert Joynt, M. G. Lagally, D. W. van der Weide, S. N. Coppersmith, M. A. Eriksson, A. M. Tyryshkin, J. O. Chu, P. M. Mooney

Abstract: The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measur… ▽ More The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature. △ Less

Submitted 29 November, 2004; originally announced November 2004.

Comments: 4 pages, 4 figures, 1 table

Spectroscopy of Valley Splitting in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas

Authors: Srijit Goswami, Mark Friesen, J. L. Truitt, Charles Tahan, L. J. Klein, J. O. Chu, P. M. Mooney, D. W. van der Weide, S. N. Coppersmith, Robert Joynt, M. A. Eriksson

Abstract: The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a li… ▽ More The lifting of the two-fold degeneracy of the conduction valleys in a strained silicon quantum well is critical for spin quantum computing. Here, we obtain an accurate measurement of the splitting of the valley states in the low-field region of interest, using the microwave spectroscopy technique of electron valley resonance (EVR). We compare our results with conventional methods, observing a linear magnetic field dependence of the valley splitting, and a strong low-field suppression, consistent with recent theory. The resonance linewidth shows a marked enhancement above $T\simeq 300$ mK. △ Less

Submitted 18 December, 2006; v1 submitted 17 August, 2004; originally announced August 2004.

Comments: Superseded by cond-mat/0611221, published in Nature Physics

Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot

Authors: L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, Mark Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, Charles Tahan, Robert Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, P. M. Mooney

Abstract: We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coul… ▽ More We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive ion etching. The dot potential and electron density are modified by laterally defined side gates in the plane of the dot. Low temperature measurements show Coulomb blockade with a single electron charging energy of 3.2 meV. △ Less

Submitted 20 April, 2004; v1 submitted 16 April, 2004; originally announced April 2004.

Comments: Typos corrected; to appear in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. v84, p4047 (2004)