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The upper critical field in the BiCh2-based superconductors CeOBiS1.7Se0.3 and PrO0.5F0.5BiS2-xSex (x = 0, 0.3)
Authors:
Ryosuke Kiyama,
Kazuhisa Hoshi,
Yosuke Goto,
Masanori Nagao,
Yoshikazu Mizuguchi
Abstract:
We report the upper critical field (Bc2) in the BiCh2-based superconductors CeOBiS1.7Se0.3 and PrO0.5F0.5BiS2-xSex (x = 0, 0.3). Single crystals of CeOBiS1.7Se0.3 and PrO0.5F0.5BiS2-xSex (x = 0, 0.3) were grown using the flux method. Single-crystal structural analysis revealed that the crystal structure at room temperature is tetragonal (P4/nmm). Through electrical resistivity and magnetization me…
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We report the upper critical field (Bc2) in the BiCh2-based superconductors CeOBiS1.7Se0.3 and PrO0.5F0.5BiS2-xSex (x = 0, 0.3). Single crystals of CeOBiS1.7Se0.3 and PrO0.5F0.5BiS2-xSex (x = 0, 0.3) were grown using the flux method. Single-crystal structural analysis revealed that the crystal structure at room temperature is tetragonal (P4/nmm). Through electrical resistivity and magnetization measurements, bulk superconductivity was observed in all samples. For CeOBiS1.7Se0.3, the in-plane Bc2 is smaller than the conventional orbital limit and Pauli limit, suggesting that ferromagnetic ordering, which has been observed in a related Ce-containing BiCh2-based compound, affects Bc2 and superconductivity. In contrast, high in-plane Bc2 was observed for PrO0.5F0.5BiS2-xSex (x = 0, 0.3). We propose that the in-plane Bc2 is enhanced by antisymmetric spin-orbit coupling, which arises from the lack of local inversion symmetry.
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Submitted 14 March, 2022;
originally announced March 2022.
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Improvement of upper critical field by the compositionally-complex-alloy concept in A15 superconductor V3X (X: Al, Si, Ga, Ge, Sn)
Authors:
Yuki Nakahira,
Ryosuke Kiyama,
Aichi Yamashita,
Hiroaki Itou,
Akira Miura,
Chikako Moriyoshi,
Yosuke Goto,
Yoshikazu Mizuguchi
Abstract:
Compositionally complex alloys (CCAs) are a new category of high-entropy materials containing more than two high-entropy phases in an alloy sample. We applied the concept of CCA to a A15-type compound superconductor V3X where X site is occupied by Al, Si, Ga, Ge, and Sn. The V3X sample shows bulk superconductivity with a transition temperature (Tc) of 6.4 K, which is close to the Tc of V3Ge. The u…
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Compositionally complex alloys (CCAs) are a new category of high-entropy materials containing more than two high-entropy phases in an alloy sample. We applied the concept of CCA to a A15-type compound superconductor V3X where X site is occupied by Al, Si, Ga, Ge, and Sn. The V3X sample shows bulk superconductivity with a transition temperature (Tc) of 6.4 K, which is close to the Tc of V3Ge. The upper critical field (Bc2(0)) of V3X estimated from magnetic susceptibility is 8.8 T, which is ~50% higher than that of V3Ge (Bc2(0) = 5.8 T). The presence of at least five different A15 phases with high configurational entropy of mixing were revealed. We consider that the examined V3X sample is an example system of CCA-type superconducting intermetallic compound.
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Submitted 24 November, 2021;
originally announced November 2021.
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Superconductivity in In-doped AgSnBiTe3 with possible band inversion
Authors:
Tsubasa Mitobe,
Kazuhisa Hoshi,
Md. Riad Kasem,
Ryosuke Kiyama,
Hidetomo Usui,
Aichi Yamashita,
Ryuji Higashinaka,
Tatsuma D. Matsuda,
Yuji Aoki,
Takayoshi Katase,
Yosuke Goto,
Yoshikazu Mizuguchi
Abstract:
We investigated the chemical pressure effects on structural and electronic properties of SnTe-based material using partial substitution of Sn by Ag0.5Bi0.5, which results in lattice shrinkage. For Sn1-2x(AgBi)xTe, single-phase polycrystalline samples were obtained with a wide range of x. On the basis of band calculations, we confirmed that the Sn1-2x(AgBi)xTe system is basically possessing band in…
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We investigated the chemical pressure effects on structural and electronic properties of SnTe-based material using partial substitution of Sn by Ag0.5Bi0.5, which results in lattice shrinkage. For Sn1-2x(AgBi)xTe, single-phase polycrystalline samples were obtained with a wide range of x. On the basis of band calculations, we confirmed that the Sn1-2x(AgBi)xTe system is basically possessing band inversion and topologically preserved electronic states. To explore new superconducting phases related to the topological electronic states, we investigated the In-do** effects on structural and superconducting properties for x = 0.33 (AgSnBiTe3). For (AgSnBi)(1-y)/3InyTe, single-phase polycrystalline samples were obtained for y = 0-0.5 by high-pressure synthesis. Superconductivity was observed for y = 0.2-0.5. For y = 0.4, the transition temperature estimated from zero-resistivity state was 2.4 K, and the specific heat investigation confirmed the emergence of bulk superconductivity. Because the presence of band inversion was theoretically predicted, and the parameters obtained from specific heat analyses were comparable to In-doped SnTe, we expect that the (AgSnBi)(1-y)/3InyTe and other (Ag,In,Sn,Bi)Te phases are candidate systems for studying topological superconductivity.
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Submitted 11 November, 2021; v1 submitted 15 September, 2021;
originally announced September 2021.
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Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3
Authors:
Ryosuke Kiyama,
Kazuhisa Hoshi,
Yosuke Goto,
Yoshikazu Mizuguchi
Abstract:
We investigate the superconducting properties and possible nematic superconductivity of self-doped BiCh2-based (Ch: S, Se) superconductor CeOBiS1.7Se0.3 through the measurements of in-plane anisotropy of magnetoresistance. Single crystals of CeOBiS1.7Se0.3 were grown using a flux method. Single-crystal structural analysis revealed that the crystal structure at room temperature is tetragonal (P4/nm…
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We investigate the superconducting properties and possible nematic superconductivity of self-doped BiCh2-based (Ch: S, Se) superconductor CeOBiS1.7Se0.3 through the measurements of in-plane anisotropy of magnetoresistance. Single crystals of CeOBiS1.7Se0.3 were grown using a flux method. Single-crystal structural analysis revealed that the crystal structure at room temperature is tetragonal (P4/nmm). Bulk superconductivity with a transition temperature of 3.3 K was observed through electrical resistivity and magnetization measurements. Investigation of anisotropy of upper critical field suggested relatively low anisotropy in the crystal as compared to other BiCh2-based superconductors. In the superconducting states of CeOBiS1.7Se0.3, two-fold symmetric in-plane anisotropy of magnetoresistance was observed, which indicates the in-plane rotational symmetry breaking in the tetragonal structure and hence the possibility of nematic superconductivity in CeOBiS1.7Se0.3.
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Submitted 25 November, 2020;
originally announced November 2020.
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Bulk superconductivity induced by Se substitution in self-doped BiCh2-based compound CeOBiS2-xSex
Authors:
Ryosuke Kiyama,
Yosuke Goto,
Kazuhisa Hoshi,
Rajveer Jha,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Tatsuma D. Matsuda,
Yuji Aoki,
Yoshikazu Mizuguchi
Abstract:
We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x = 0.4 and 0.6, bulk superconducting transitions with a large shielding volume fraction were observed in magnetic susceptibility measurements; the highest transition…
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We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x = 0.4 and 0.6, bulk superconducting transitions with a large shielding volume fraction were observed in magnetic susceptibility measurements; the highest transition temperature (Tc) was 3.0 K for x = 0.6. A superconductivity phase diagram of CeOBiS2-xSex was established based on Tc estimated from the electrical resistivity and magnetization measurements. The emergence of superconductivity in CeOBiS2-xSex was explained with two essential parameters of in-plane chemical pressure and carrier concentration, which systematically changed with increasing Se concentration.
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Submitted 22 January, 2020;
originally announced January 2020.