Showing 1–15 of 15 results for author: Kittiwatanakul, S

Observation of weakened V-V dimers in the monoclinic metallic phase of strained VO2

Authors: J. Laverock, V. Jovic, A. A. Zakharov, Y. R. Niu, S. Kittiwatanakul, B. Westhenry, J. W. Lu, S. A. Wolf, K. E. Smith

Abstract: Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO2 represent periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT,… ▽ More Emergent order at mesoscopic length scales in condensed matter can provide fundamental insight into the underlying competing interactions and their relationship with the order parameter. Using spectromicroscopy, we show that mesoscopic stripe order near the metal-insulator transition (MIT) of strained VO2 represent periodic modulations in both crystal symmetry and V-V dimerization. Above the MIT, we unexpectedly find the long range order of V-V dimer strength and crystal symmetry become dissociated beyond ~ 200 nm, whereas the conductivity transition proceeds homogeneously in a narrow temperature range. △ Less

Submitted 13 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. Lett. 121, 256403 (2018)

Phase change materials for nano-polaritonics: a case study of hBN/VO2 heterostructures

Authors: S. Dai, J. Zhang, Q. Ma, S. Kittiwatanakul, A. S. McLeod, X. Chen, S. N. Gilbert Corder, K. Watanabe, T. Taniguchi, J. Lu, Q. Dai, P. Jarillo-Herrero, M. K. Liu, D. N. Basov

Abstract: Polaritonic excitation and control in van der Waals (vdW) materials exhibit superior merits than conventional materials and thus hold new promise for exploring light matter interactions. In this work, we created vdW heterostructures combining hexagonal boron nitride (hBN) and a representative phase change material - vanadium dioxide (VO2). Using infrared nano-spectroscopy and nano-imaging, we demo… ▽ More Polaritonic excitation and control in van der Waals (vdW) materials exhibit superior merits than conventional materials and thus hold new promise for exploring light matter interactions. In this work, we created vdW heterostructures combining hexagonal boron nitride (hBN) and a representative phase change material - vanadium dioxide (VO2). Using infrared nano-spectroscopy and nano-imaging, we demonstrated the dynamic tunability of hyperbolic phonon polaritons in hBN/VO2 heterostructures by temperature control in a precise and reversible fashion. The dynamic tuning of the polaritons stems from the change of local dielectric properties of the VO2 sublayer through insulator to metal transition by the temperature control. The high susceptibility of polaritons to electronic phase transitions opens possibilities for applications of vdW materials in combination with correlated phase change materials. △ Less

Submitted 25 September, 2018; originally announced September 2018.

Comments: 15 pages, 5 figures

Journal ref: Advanced Materials 31, 1900251 (2019)

Surface morphology and superconductivity of Nb thin films by biased target ion beam deposition

Authors: Salinporn Kittiwatanakul, Nattawut Anuniwat, Nam Dao, Stuart A. Wolf, Jiwei Lu

Abstract: One of many challenges for niobium (Nb) based superconducting devices is the improvement over the surface morphology and superconducting properties as well as the reduction of defects. We employed a novel deposition technique, i.e. biased target ion beam deposition technique (BTIBD) to prepare Nb thin films with controlled crystallinity and surface morphology. We found that the target current (ITa… ▽ More One of many challenges for niobium (Nb) based superconducting devices is the improvement over the surface morphology and superconducting properties as well as the reduction of defects. We employed a novel deposition technique, i.e. biased target ion beam deposition technique (BTIBD) to prepare Nb thin films with controlled crystallinity and surface morphology. We found that the target current (ITarget) and the target bias (VTarget) were critical to the crystallinity and surface morphology of Nb films. The high target current (ITarget >500 mA and VTarget = 400 V bias) during the deposition degraded the Nb crystallinity, and subsequently reduced the critical temperature for superconductivity (Tc). VTarget was critical to the surface morphology, i.e. grain size and shape and the surface roughness. The optimized growth condition yielded very smooth film with RMS roughness of 0.4 nm that was an order of magnitude smoother than that of Nb films by sputtering process. The critical temperature for superconductivity was also close to the value of the bulk Nb. The quality of Nb film was evident in the presence of a very thin proximity layer (~ 0.8 nm). The experimental results demonstrated that the preparation of smooth Nb films with adequate superconductivity by BTIBD could serve as a base electrode for the in-situ magnetic layer or insulating layer for superconducting electronic devices. △ Less

Submitted 10 August, 2017; originally announced August 2017.

Ultrafast Electron-Lattice Coupling Dynamics in VO2 and V2O3 Thin Films

Authors: Elsa Abreu, Stephanie N. Gilbert Corder, Sun ** Yun, Siming Wang, Juan Gabriel Ramirez, Kevin West, **gdi Zhang, Salinporn Kittiwatanakul, Ivan K. Schuller, Jiwei Lu, Stuart A. Wolf, Hyun-Tak Kim, Mengkun Liu, Richard D. Averitt

Abstract: Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced l… ▽ More Ultrafast optical pump - optical probe and optical pump - terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the electronic oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in the metallic state of both materials. The low energy Drude response of V2O3 appears more susceptible than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the phase transition. Our data also confirm observations of strong dam** and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3. More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, opening the way to similar studies in other complex materials. △ Less

Submitted 19 January, 2017; originally announced January 2017.

Comments: 21 pages, 5 figures, supplemental material included

Journal ref: Phys. Rev. B 96, 094309 (2017)

Spin-torque switching in large size nano-magnet with perpendicular magnetic fields

Authors: Linqiang Luo, Mehdi Kabir, Nam Dao, Salinporn Kittiwatanakul, Michael Cyberey, Stuart A. Wolf, Mircea Stan, Jiwei Lu

Abstract: DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co90Fe10) and free layer (Ni80Fe20) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. The magnetiza… ▽ More DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer (Co90Fe10) and free layer (Ni80Fe20) in the pseudo spin valve, allowing a large window of external magnetic field for exploring the free-layer reversal. The magnetization precession was manifested in terms of the multiple peaks on the differential resistance curves. Depending on the bias current and applied field, the regions of magnetic switching and magnetization precession on a dynamical stability diagram has been discussed in details. Micromagnetic simulations are shown to be in good agreement with experimental results and provide insight for synchronization of inhomogenieties in large sized device. The ability to manipulate spin-dynamics on large size devices could prove useful for increasing the output power of the spin-transfer nano-oscillators (STNOs). △ Less

Submitted 21 October, 2016; originally announced October 2016.

Comments: 12 pages, 4 figures. This work has been presented in APS March meeting, Baltimore, Mar 14-18, 2016

Phase transition in bulk single crystals and thin films of VO2 by nano-infrared spectroscopy and imaging

Authors: Mengkun Liu, Aaron J. Sternbach, Martin Wagner, Tetiana V. Slusar, Tai Kong, Sergey L. Bud'ko, Salinporn Kittiwatanakul, M. M. Qazilbash, Alexander McLeod, Zhe Fei, Elsa Abreu, **gdi Zhang, Michael Goldflam, Siyuan Dai, Guang-Xin Ni, Jiwei Lu, Hans A. Bechtel, Michael C. Martin, Markus B. Raschke, Richard D. Averitt, Stuart A. Wolf, Hyun-Tak Kim, Paul C. Canfield, D. N. Basov

Abstract: We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20 nm), we show that epitaxial strain in VO2 thin films not only triggers sp… ▽ More We have systematically studied a variety of vanadium dioxide (VO2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO2 with sub-grain-size spatial resolution (~20 nm), we show that epitaxial strain in VO2 thin films not only triggers spontaneous local phase separations but also leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain and symmetry dependent mesoscopic phase inhomogeneity are also discussed. These results set the stage for a comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Comments: 8 figures + 2 supplemental figures Accepted by Phys. Rev. B

Effect of inhomogeneities and substrate on the dynamics of the metal-insulator transition in VO$_2$ thin films

Authors: M. Rodriguez-Vega, M. T. Simons, E. Radue, S. Kittiwatanakul, J. Lu, S. A. Wolf, R. A. Lukaszew, I. Novikova, E. Rossi

Abstract: We study the thermal relaxation dynamics of VO$_2$ films after the ultrafast photo-induced metal-insulator transition for two VO$_2$ film samples grown on Al$_2$O$_3$ and TiO$_2$ substrates. We find two orders of magnitude difference in the recovery time (a few ns for the VO$_2$/Al$_2$O$_3$ sample vs. hundreds of ns for the VO$_2$/TiO$_2$ sample). We present a theoretical model that accurately des… ▽ More We study the thermal relaxation dynamics of VO$_2$ films after the ultrafast photo-induced metal-insulator transition for two VO$_2$ film samples grown on Al$_2$O$_3$ and TiO$_2$ substrates. We find two orders of magnitude difference in the recovery time (a few ns for the VO$_2$/Al$_2$O$_3$ sample vs. hundreds of ns for the VO$_2$/TiO$_2$ sample). We present a theoretical model that accurately describes the MIT thermal properties and interpret the experimental measurements. We obtain quantitative results that show how the microstructure of the VO$_2$ film and the thermal conductivity of the interface between the VO$_2$ film and the substrate affect long time-scale recovery dynamics. We also obtain a simple analytic relationship between the recovery time-scale and some of the film parameters. △ Less

Submitted 12 September, 2015; v1 submitted 22 April, 2015; originally announced April 2015.

Comments: 10 pages, 15 figures

Journal ref: Phys. Rev. B 92, 115420 (2015)

Direct Observation of Decoupled Structural and Electronic Transitions and an Ambient Pressure Monoclinic-Like Metallic Phase of VO$_2$

Authors: J. Laverock, S. Kittiwatanakul, A. A. Zakharov, Y. R. Niu, B. Chen, S. A. Wolf, J. W. Lu, K. E. Smith

Abstract: We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different temperature scales, and are separated by an unusual monoclinic-like metallic phase. Our results provide conclusive evidence that the new monoclinic-like metallic phas… ▽ More We report the simultaneous measurement of the structural and electronic components of the metal-insulator transition of VO$_2$ using electron and photoelectron spectroscopies and microscopies. We show that these evolve over different temperature scales, and are separated by an unusual monoclinic-like metallic phase. Our results provide conclusive evidence that the new monoclinic-like metallic phase, recently identified in high-pressure and nonequilibrium measurements, is accessible in the thermodynamic transition at ambient pressure, and we discuss the implications of these observations on the nature of the MIT in VO$_2$. △ Less

Submitted 17 November, 2014; originally announced November 2014.

Journal ref: Phys. Rev. Lett. 113, 216402 (2014)

Substrate-induced microstructure effects on the dynamics of the photo-induced Metal-insulator transition in VO$_2$ thin films

Authors: E. Radue, L. Wang, S. Kittiwatanakul, J. Lu, S. A. Wolf, E. Rossi, R. A. Lukaszew, I. Novikova

Abstract: We investigate the differences in the dynamics of the ultrafast photo-induced metal-insulator transition (MIT) of two VO$_2$ thin films deposited on different substrates, TiO$_2$ and Al$_2$O$_3$, and in particular the temperature dependence of the threshold laser fluence values required to induce various MIT stages in a wide range of sample temperatures (150 K - 320 K). We identified that, althoug… ▽ More We investigate the differences in the dynamics of the ultrafast photo-induced metal-insulator transition (MIT) of two VO$_2$ thin films deposited on different substrates, TiO$_2$ and Al$_2$O$_3$, and in particular the temperature dependence of the threshold laser fluence values required to induce various MIT stages in a wide range of sample temperatures (150 K - 320 K). We identified that, although the general pattern of MIT evolution was similar for the two samples, there were several differences. Most notably, the threshold values of laser fluence required to reach the transition to a fully metallic phase in the VO$_2$ film on the TiO$_2$ substrate were nearly constant in the range of temperatures considered, whereas the VO$_2$/Al$_2$O$_3$ sample showed clear temperature dependence. Our analysis qualitatively connects such behavior to the structural differences in the two VO$_2$ films. △ Less

Submitted 16 January, 2015; v1 submitted 23 October, 2014; originally announced October 2014.

Comments: Changed formatting of figures, fixed some citations: Consistent with published version

Journal ref: J. Opt. 17 025503 (2015)

Large epitaxial bi-axial strain induces a Mott-like phase transition in VO2

Authors: Salinporn Kittiwatanakul, Stuart A. Wolf, Jiwei Lu

Abstract: The metal insulator transition (MIT) in VO2 has been an important topic for recent years. It has been generally agreed that the mechanism of the MIT in bulk VO2 is considered to be a collaborative Mott-Peierls transition, however the effect of the strain on the phase transition is much more complicated. In this study the effect of the large strain on the properties of VO2 films was investigated. O… ▽ More The metal insulator transition (MIT) in VO2 has been an important topic for recent years. It has been generally agreed that the mechanism of the MIT in bulk VO2 is considered to be a collaborative Mott-Peierls transition, however the effect of the strain on the phase transition is much more complicated. In this study the effect of the large strain on the properties of VO2 films was investigated. One remarkable result is that highly strained epitaxial VO2 thin films were rutile in the insulating state as well as in the metallic state. These highly strained VO2 films underwent an electronic phase transition without the concomitant Peierls transition. Our results also show that a very large tensile strain along the c-axis of rutile VO2 resulted in a phase transition temperature of ~ 433 K, much higher than in any previous report. Our findings elicit that the metal insulator transition in VO2 can be driven by an electronic transition alone, rather the typical coupled electronic-structural transition. △ Less

Submitted 28 June, 2014; originally announced June 2014.

Journal ref: Appl. Phys. Lett. 105, 073112 (2014)

Transport behavior and electronic structure of phase pure VO2 thin films grown on c-plane sapphire under different O2 partial pressure

Authors: Salinporn Kittiwatanakul, Jude Laverock, Dave Newby Jr., Kevin E. Smith, Stuart A. Wolf, Jiwei Lu

Abstract: We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive c… ▽ More We grew highly textured phase pure VO2 thin films on c-plane Al2O3 substrates with different oxygen partial pressure. X-ray absorption and photoemission spectroscopy confirm the identical valence state of vanadium ions despite the different oxygen pressure during the deposition. As the O2 flow rate increases, the [010] lattice parameter for monoclinic VO2 was reduced and coincidently distinctive changes in the metal- semiconductor transition (MST) and transport behaviors were observed despite the identical valence state of vanadium in these samples. We discuss the effect of the oxygen partial pressure on the monoclinic structure and electronic structure of VO2, and consequently the MST. △ Less

Submitted 22 July, 2013; originally announced July 2013.

Comments: 16 pages, 3 figures, 1 table

Journal ref: J. Appl. Phys. 114, 053703 (2013)

Photoemission evidence for crossover from Peierls-like to Mott-like transition in highly strained VO$_2$

Authors: J. Laverock, A. R. H. Preston, D. Newby Jr, K. E. Smith, S. Sallis, L. F. J. Piper, S. Kittiwatanakul, J. W. Lu, S. A. Wolf, M. Leandersson, T. Balasubramanian

Abstract: We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of mechanical strain. Comparison with a moderately strained system, which does involve the lattice, demonstrates the crossover from Peierls- to Mott-like transitions. We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of mechanical strain. Comparison with a moderately strained system, which does involve the lattice, demonstrates the crossover from Peierls- to Mott-like transitions. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Journal ref: Phys. Rev. B 86, 195124 (2012)

Substrate Effect on Optical Properties of Insulator-Metal Transition in VO2 Thin Films

Authors: E. Radue, E. Crisman, L. Wang, S. Kittiwatanakul, J. Lu, S. A. Wolf, R. Wincheski, R. A. Lukaszew, I. Novikova

Abstract: In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition temperature in similar VO2 films grown on quartz and sapphire substrates: the film grown on quartz displayed the phase transition at a lower temperature (Tc=50C) c… ▽ More In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition temperature in similar VO2 films grown on quartz and sapphire substrates: the film grown on quartz displayed the phase transition at a lower temperature (Tc=50C) compared a film grown on sapphire (Tc=68C). We also investigated differences in the detected Raman signal for different wavelengths and polarizations of the excitation laser. We found that for either substrate, a longer wavelength (in our case 785 nm) yielded the clearest VO2 Raman spectra, with no polarization dependence. △ Less

Submitted 10 January, 2013; v1 submitted 29 October, 2012; originally announced October 2012.

Comments: 14 pages, 6 figures

Strain dependence of bonding and hybridization across the metal-insulator transition of VO2

Authors: J. Laverock, L. F. J. Piper, A. R. H. Preston, B. Chen, J. McNulty, K. E. Smith, S. Kittiwatanakul, J. W. Lu, S. A. Wolf, P. -A. Glans, J. -H. Guo

Abstract: Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly str… ▽ More Soft x-ray spectroscopy is used to investigate the strain dependence of the metal-insulator transition of VO2. Changes in the strength of the V 3d - O 2p hybridization are observed across the transition, and are linked to the structural distortion. Furthermore, although the V-V dimerization is well-described by dynamical mean-field theory, the V-O hybridization is found to have an unexpectedly strong dependence on strain that is not predicted by band theory, emphasizing the relevance of the O ion to the physics of VO2. △ Less

Submitted 10 February, 2012; originally announced February 2012.

Journal ref: Phys. Rev. B 85, 081104(R) (2012)

VO2 nanosheets: controlling the THz properties through strain engineering

Authors: Elsa Abreu, Mengkun Liu, Jiwei Lu, Kevin G. West, Salinporn Kittiwatanakul, Wen**g Yin, Stuart A. Wolf, Richard D. Averitt

Abstract: We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature a… ▽ More We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis. △ Less

Submitted 7 December, 2011; originally announced December 2011.

Journal ref: New Journal of Physics 14, 083026 (2012)