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Channel length dependence of the formation of quantum dots in GaN/AlGaN FETs
Authors:
Kazuma Matsumura,
Takaya Abe,
Takahito Kitada,
Takeshi Kumasaka,
Norikazu Ito,
Taketoshi Tanaka,
Ken Nakahara,
Tomohiro Otsuka
Abstract:
Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and…
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Quantum dots can be formed in simple GaN/AlGaN field-effect-transistors (FETs) by disordered potential induced by impurities and defects. Here, we investigate the channel length dependence of the formation of quantum dots. We observe decrease of the number of formed quantum dots with decrease of the FET channel length. A few quantum dots are formed in the case with the gate length of 0.05~$μ$m and we evaluate the dot parameters and the disordered potential. We also investigate the effects of a thermal cycle and illumination of light, and reveal the change of the disordered potential.
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Submitted 13 April, 2023;
originally announced April 2023.
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Visual explanations of machine learning model estimating charge states in quantum dots
Authors:
Yui Muto,
Takumi Nakaso,
Motoya Shinozaki,
Takumi Aizawa,
Takahito Kitada,
Takashi Nakajima,
Matthieu R. Delbecq,
Jun Yoneda,
Kenta Takeda,
Akito Noiri,
Arne Ludwig,
Andreas D. Wieck,
Seigo Tarucha,
Atsunori Kanemura,
Motoki Shiga,
Tomohiro Otsuka
Abstract:
Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been demonstrated. For further development of this technology, an understanding of the operation of the machine learning model, which is usually a black box,…
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Charge state recognition in quantum dot devices is important in the preparation of quantum bits for quantum information processing. Toward auto-tuning of larger-scale quantum devices, automatic charge state recognition by machine learning has been demonstrated. For further development of this technology, an understanding of the operation of the machine learning model, which is usually a black box, will be useful. In this study, we analyze the explainability of the machine learning model estimating charge states in quantum dots by gradient-weighted class activation map**, which identified class-discriminative regions for the predictions. The model predicts the state based on the change transition lines, indicating that human-like recognition is realized. We also demonstrate improvements of the model by utilizing feedback from the map** results. Due to the simplicity of our simulation and pre-processing methods, our approach offers scalability without significant additional simulation costs, demonstrating its suitability for future quantum dot system expansions.
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Submitted 27 December, 2023; v1 submitted 26 October, 2022;
originally announced October 2022.
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Gate voltage dependence of noise distribution in radio-frequency reflectometry in gallium arsenide quantum dots
Authors:
Motoya Shinozaki,
Yui Muto,
Takahito Kitada,
Takashi Nakajima,
Matthieu R. Delbecq,
Jun Yoneda,
Kenta Takeda,
Akito Noiri,
Takumi Ito,
Arne Ludwig,
Andreas D. Wieck,
Seigo Tarucha,
Tomohiro Otsuka
Abstract:
We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the fl…
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We investigate gate voltage dependence of electrical readout noise in high-speed rf reflectometry using gallium arsenide quantum dots. The fast Fourier transform spectrum from the real time measurement reflects build-in device noise and circuit noise including the resonator and the amplifier. We separate their noise spectral components by model analysis. Detail of gate voltage dependence of the flicker noise is investigated and compared to the charge sensor sensitivity. We point out that the dominant component of the readout noise changes by the measurement integration time.
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Submitted 12 January, 2021; v1 submitted 7 December, 2020;
originally announced December 2020.
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Formation of quantum dots in GaN/AlGaN FETs
Authors:
Tomohiro Otsuka,
Takaya Abe,
Takahito Kitada,
Norikazu Ito,
Taketoshi Tanaka,
Ken Nakahara
Abstract:
GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potenti…
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GaN and the heterostructures are attractive in condensed matter science and applications for electronic devices. We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). Multiple quantum dots are formed in the disordered potential induced by impurities in the FET conduction channel. We also measure the gate insulator dependence of the transport properties. These results can be utilized for the development of quantum dot devices utilizing GaN/AlGaN heterostructures and evaluation of the impurities in GaN/AlGaN FET channels.
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Submitted 18 May, 2020; v1 submitted 9 February, 2020;
originally announced February 2020.
