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Probing Ferroelectric Phase Transitions in Barium Titanate Single Crystals via $\it{in-situ}$ Second Harmonic Generation Microscopy
Authors:
Benjamin Kirbus,
Samuel D. Seddon,
Iuliia Kiseleva,
Elke Beyreuther,
Michael Rüsing,
Lukas M. Eng
Abstract:
Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO$_3$; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay…
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Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO$_3$; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay of such FE domains, the domain walls (DWs), and their macroscopic properties, owed to BTO's multiple and experimentally accessible phase transitions. Here, we employ Second Harmonic Generation Microscopy (SHGM) to $\it{in-situ}$ investigate the cubic-to-tetragonal (at $\sim$126$^\circ$C) and the tetragonal-to-orthorhombic (at $\sim$5$^\circ$C) phase transition in single-crystalline BTO via 3-dimensional (3D) DW map**. We demonstrate that SHGM imaging provides the direct visualization of FE domain switching as well as the domain dynamics in 3D, shedding light on the interplay of the domain structure and the phase transition. These results allow us to extract the different transition temperatures locally, to unveil the hysteresis behavior, and to determine the type of phase transition at play (1st/2nd order) from the recorded SHGM data. The capabilities of SHGM in uncovering these crucial phenomena can easily be applied to other ferroelectrics to provide new possibilities for $\it{in-situ}$ engineering of advanced ferroic devices.
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Submitted 8 June, 2024;
originally announced June 2024.
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Towards the reproducible fabrication of conductive ferroelectric domain walls into lithium niobate bulk single crystals
Authors:
Julius Ratzenberger,
Iuliia Kiseleva,
Boris Koppitz,
Elke Beyreuther,
Manuel Zahn,
Joshua Gössel,
Peter A. Hegarty,
Zeeshan H. Amber,
Michael Rüsing,
Lukas M. Eng
Abstract:
Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale, since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their reproducible manufacturing by gaining preparative control over domain size and domain wall conductivity (DWC). To date, most works on DWC have focused on exploring th…
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Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale, since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their reproducible manufacturing by gaining preparative control over domain size and domain wall conductivity (DWC). To date, most works on DWC have focused on exploring the fundamental electrical properties of individual DWs within single shot experiments, with emphasis on quantifying the origins for DWC. Very few reports exist when it comes to compare the DWC properties between two separate DWs, and literally nothing exists where issues of reproducibility in DWC devices have been addressed. To fill this gap while facing the challenge of finding guidelines achieving predictable DWC performance, we report on a procedure that allows us to reproducibly prepare single hexagonal domains of a predefined diameter into uniaxial ferroelectric (FE) lithium niobate (LN) single crystals of 200 and 300 micrometers thickness, respectively. We show that the domain diameter can be controlled with an error of a few percent. As-grown DWs are then subjected to a standard procedure of current-controlled high-voltage DWC enhancement, repetitively reaching a DWC increase of 6 orders of magnitude. While all resulting DWs show significantly enhanced DWC values, subtle features in their individual current-voltage (I-V) characteristics hint towards different 3D shapes into the bulk, with variations probably reflecting local heterogeneities by defects, DW pinning, and surface-near DW inclination, which seem to have a larger impact than expected.
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Submitted 13 May, 2024;
originally announced May 2024.
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R2D2 -- An equivalent-circuit model that quantitatively describes domain wall conductivity in ferroelectric LiNbO$_3$
Authors:
Manuel Zahn,
Elke Beyreuther,
Iuliia Kiseleva,
Ahmed Samir Lotfy,
Conor J. McCluskey,
Jesi R. Maguire,
Ahmet Suna,
Michael Rüsing,
J. Marty Gregg,
Lukas M. Eng
Abstract:
Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differ…
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Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differentiate between these two contributions. Practically, they allow us here to directly quantify the physical parameters relevant for the two mechanisms (a) and (b) mentioned above. These are, e.g., the resistance of the DW, the saturation current, the ideality factor, and the Schottky barrier height of the electrode/DW junction. Furthermore, the activation energies needed to initiate the thermally-activated electronic transport along the DWs, can be extracted. In addition, we show that electronic transport along LiNbO$_3$ DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode/double-resistor equivalent circuit model, the R2D2 model. Finally, our R2D2 model was checked for its universality by fitting the DWC data not only to z-cut LNO bulk DWs, but equally to z-cut thin-film LNO DWs, and DWC from x-cut DWs as reported in literature.
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Submitted 19 November, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
