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High-precision real-space simulation of electrostatically-confined few-electron states
Authors:
Christopher R. Anderson,
Mark F. Gyure,
Sam Quinn,
Andrew Pan,
Richard S. Ross,
Andrey A. Kiselev
Abstract:
In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full Configuration Interaction (FCI) method with a continuously adapted orthonormal orbital basis to approximate the ground and excited states of such syst…
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In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full Configuration Interaction (FCI) method with a continuously adapted orthonormal orbital basis to approximate the ground and excited states of such systems. We also introduce a benchmark problem based on a realistic analytical electrostatic potential for quantum dot devices. We show that our approach leads to highly precise computed energies and energy differences over a wide range of model parameters. The analytic definition of the benchmark allows for a collection of tests that are easily replicated, thus facilitating comparisons with other computational approaches.
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Submitted 28 February, 2022;
originally announced March 2022.
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Universal logic with encoded spin qubits in silicon
Authors:
Aaron J. Weinstein,
Matthew D. Reed,
Aaron M. Jones,
Reed W. Andrews,
David Barnes,
Jacob Z. Blumoff,
Larken E. Euliss,
Kevin Eng,
Bryan Fong,
Sieu D. Ha,
Daniel R. Hulbert,
Clayton Jackson,
Michael Jura,
Tyler E. Keating,
Joseph Kerckhoff,
Andrey A. Kiselev,
Justine Matten,
Golam Sabbir,
Aaron Smith,
Jeffrey Wright,
Matthew T. Rakher,
Thaddeus D. Ladd,
Matthew G. Borselli
Abstract:
Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-…
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Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this approach include excellent coherence, low control crosstalk, and configurable insensitivity to certain error sources. Key difficulties are that encoded entangling gates require a large number of control pulses and high-yielding quantum dot arrays. Here we show a device made using the single-layer etch-defined gate electrode architecture that achieves both the required functional yield needed for full control and the coherence necessary for thousands of calibrated exchange pulses to be applied. We measure an average two-qubit Clifford fidelity of $97.1 \pm 0.2\%$ with randomized benchmarking. We also use interleaved randomized benchmarking to demonstrate the controlled-NOT gate with $96.3 \pm 0.7\%$ fidelity, SWAP with $99.3 \pm 0.5\%$ fidelity, and a specialized entangling gate that limits spreading of leakage with $93.8 \pm 0.7\%$ fidelity.
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Submitted 7 February, 2022;
originally announced February 2022.
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Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
Authors:
S. D. Liles,
F. Martins,
D. S. Miserev,
A. A. Kiselev,
I. D. Thorvaldson,
M. J. Rendell,
I. K. **,
F. E. Hudson,
M. Veldhorst,
K. M. Itoh,
O. P. Sushkov,
T. D. Ladd,
A. S. Dzurak,
A. R. Hamilton
Abstract:
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We sh…
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Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We show that non-uniform electrode-induced strain produces nanometre-scale variations in the HH-LH splitting. Importantly, we find that this \RR{non-uniform strain causes} the HH-LH splitting to vary by up to 50\% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the non-uniform strain profile, allowing a new mechanism for electric modulation of the hole g-tensor. Using this mechanism we demonstrate tuning of the hole $g$-factor by up to 500\%. In addition, we observe a \RR{potential} sweet spot where d$g_{(1\overline{1}0)}$/d$V$ = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a previously unexplored technology: engineering of \RR{non-uniform} strains to optimise spin-based devices.
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Submitted 20 December, 2021; v1 submitted 9 December, 2020;
originally announced December 2020.
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Detuning Axis Pulsed Spectroscopy of Valley-Orbital States in Si/SiGe Quantum Dots
Authors:
Edward H. Chen,
Kate Raach,
Andrew Pan,
Andrey A. Kiselev,
Edwin Acuna,
Jacob Z. Blumoff,
Teresa Brecht,
Maxwell Choi,
Wonill Ha,
Daniel Hulbert,
Michael P. Jura,
Tyler Keating,
Ramsey Noah,
Bo Sun,
Bryan J. Thomas,
Matthew Borselli,
C. A. C. Jackson,
Matthew T. Rakher,
Richard S. Ross
Abstract:
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniq…
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Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving device performance. We describe a spectroscopic method for probing excited states in isolated Si/SiGe double quantum dots using standard baseband pulsing techniques, easing the extraction of energy spectra in multiple-dot devices. We use this method to measure dozens of valley excited state energies spanning multiple wafers, quantum dots, and orbital states, crucial for evaluating the dependence of valley splitting on quantum well width and other epitaxial conditions. Our results suggest that narrower wells can be beneficial for improving valley splittings, but this effect can be confounded by variations in growth and fabrication conditions. These results underscore the importance of valley splitting measurements for guiding the development of Si qubits.
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Submitted 26 February, 2021; v1 submitted 9 October, 2020;
originally announced October 2020.
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Magnetic Gradient Fluctuations from Quadrupolar $^{73}$Ge in Si/SiGe Exchange-Only Qubits
Authors:
J. Kerckhoff,
B. Sun,
B. H. Fong,
C. Jones,
A. A. Kiselev,
D. W. Barnes,
R. S. Noah,
E. Acuna,
M. Akmal,
S. D. Ha,
J. A. Wright,
B. J. Thomas,
C. A. C. Jackson,
L. F. Edge,
K. Eng,
R. S. Ross,
T. D. Ladd
Abstract:
We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width…
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We study the time-fluctuating magnetic gradient noise mechanisms in pairs of Si/SiGe quantum dots using exchange echo noise spectroscopy. We find through a combination of spectral inversion and correspondence to theoretical modeling that quadrupolar precession of the $^{73}$Ge nuclei play a key role in the spin-echo decay time $T_2$, with a characteristic dependence on magnetic field and the width of the Si quantum well. The $^{73}$Ge noise peaks appear at the fundamental and first harmonic of the $^{73}$Ge Larmor resonance, superimposed over $1/f$ noise due to $^{29}$Si dipole-dipole dynamics, and are dependent on material epitaxy and applied magnetic field. These results may inform the needs of dynamical decoupling when using Si/SiGe quantum dots as qubits in quantum information processing devices.
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Submitted 17 September, 2020;
originally announced September 2020.
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Single-spin qubits in isotopically enriched silicon at low magnetic field
Authors:
R. Zhao,
T. Tanttu,
K. Y. Tan,
B. Hensen,
K. W. Chan,
J. C. C. Hwang,
R. C. C. Leon,
C. H. Yang,
W. Gilbert,
F. E. Hudson,
K. M. Itoh,
A. A. Kiselev,
T. D. Ladd,
A. Morello,
A. Laucht,
A. S. Dzurak
Abstract:
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) rea…
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Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon (MOS) quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with $T_{2}^{Rabi}=18.6$~$μ$s and $T_2^*=1.4$~$μ$s at 150~mT. Their coherence is limited by spin flips of residual $^{29}$Si nuclei in the isotopically enriched $^{28}$Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.
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Submitted 23 August, 2019; v1 submitted 19 December, 2018;
originally announced December 2018.
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Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
Authors:
A. M. Jones,
E. J. Pritchett,
E. H. Chen,
T. E. Keating,
R. W. Andrews,
J. Z. Blumoff,
L. A. De Lorenzo,
K. Eng,
S. D. Ha,
A. A. Kiselev,
S. M. Meenehan,
S. T. Merkel,
J. A. Wright,
L. F. Edge,
R. S. Ross,
M. T. Rakher,
M. G. Borselli,
A. Hunter
Abstract:
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the mea…
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We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fast, single-shot charge measurement, reliably extracts an energy in the limits of both large and small splittings. We perform this technique on an undoped, accumulation-mode Si/SiGe triple-quantum dot and find that the measured splitting varies smoothly as a function of confinement gate biases. Not only does this demonstration prove the value of having an $in~situ$ excited-state measurement technique as part of a standard tune-up procedure, it also suggests that in typical Si/SiGe quantum dot devices, spin-blockade can be limited by lateral orbital excitation energy rather than valley splitting.
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Submitted 21 September, 2018;
originally announced September 2018.
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$h/e$ superconducting quantum interference through trivial edge states in InAs
Authors:
Folkert K. de Vries,
Tom Timmerman,
Viacheslav P. Ostroukh,
Jasper van Veen,
Arjan J. A. Beukman,
Fanming Qu,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID…
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Josephson junctions defined in strong spin orbit semiconductors are highly interesting for the search for topological systems. However, next to topological edge states that emerge in a sufficient magnetic field, trivial edge states can also occur. We study the trivial edge states with superconducting quantum interference measurements on non-topological InAs Josephson junctions. We observe a SQUID pattern, an indication of superconducting edge transport. Also, a remarkable $h/e$ SQUID signal is observed that, as we find, stems from crossed Andreev states.
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Submitted 18 September, 2017; v1 submitted 12 September, 2017;
originally announced September 2017.
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Spin-orbit interaction in a dual gated InAs/GaSb quantum well
Authors:
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Rafal Skolasinski,
Michael Wimmer,
Fanming Qu,
David T. de Vries,
Binh-Minh Nguyen,
Wei Yi,
Andrey A. Kiselev,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regim…
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Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.
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Submitted 11 April, 2017;
originally announced April 2017.
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Quantized conductance and large g-factor anisotropy in InSb quantum point contacts
Authors:
Fanming Qu,
Jasper van Veen,
Folkert K. de Vries,
Arjan J. A. Beukman,
Michael Wimmer,
Wei Yi,
Andrey A. Kiselev,
Binh-Minh Nguyen,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum w…
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Due to a strong spin-orbit interaction and a large Landé g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are conceived as an alternative approach to nanowires. In this work, we report a pronounced conductance quantization of quantum point contact devices in InSb/InAlSb quantum wells. Using a rotating magnetic field, we observe a large in-plane (|g1|=26) and out-of-plane (|g1|=52) g-factor anisotropy. Additionally, we investigate crossings of subbands with opposite spins and extract the electron effective mass from magnetic depopulation of one-dimensional subbands.
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Submitted 18 August, 2016;
originally announced August 2016.
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Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
Authors:
Binh-Minh Nguyen,
Andrey A. Kiselev,
Ramsey Noah,
Wei Yi,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Morten Kjaergaard,
Henri J. Suominen,
Fabrizio Nichele,
Charles M. Marcus,
Michael J. Manfra,
Marko Sokolich
Abstract:
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance f…
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A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically-predicted topological system with a temperature insensitive linear resistivity per unit length in the range of 2 kOhm/um. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n-type.
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Submitted 16 May, 2016;
originally announced May 2016.
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Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
Authors:
Fabrizio Nichele,
Morten Kjaergaard,
Henri J. Suominen,
Rafal Skolasinski,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Fanming Qu,
Arjan J. A. Beukman,
Leo P. Kouwenhoven,
Charles M. Marcus
Abstract:
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like state…
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Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in $e^2/h$ steps and a non-trivial Berry phase.
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Submitted 24 November, 2016; v1 submitted 4 May, 2016;
originally announced May 2016.
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Edge Transport in the Trivial Phase of InAs/GaSb
Authors:
Fabrizio Nichele,
Henri J. Suominen,
Morten Kjaergaard,
Charles M. Marcus,
Ebrahim Sajadi,
Joshua A. Folk,
Fanming Qu,
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Stevan Nadj-Perge,
Leo P. Kouwenhoven,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Eric M. Spanton,
Kathryn A. Moler
Abstract:
We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resemb…
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We present transport and scanning SQUID measurements on InAs/GaSb double quantum wells, a system predicted to be a two-dimensional topological insulator. Top and back gates allow independent control of density and band offset, allowing tuning from the trivial to the topological regime. In the trivial regime, bulk conductivity is quenched but transport persists along the edges, superficially resembling the predicted helical edge-channels in the topological regime. We characterize edge conduction in the trivial regime in a wide variety of sample geometries and measurement configurations, as a function of temperature, magnetic field, and edge length. Despite similarities to studies claiming measurements of helical edge channels, our characterization points to a non-topological origin for these observations.
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Submitted 7 August, 2016; v1 submitted 5 November, 2015;
originally announced November 2015.
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Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation
Authors:
M. D. Reed,
B. M. Maune,
R. W. Andrews,
M. G. Borselli,
K. Eng,
M. P. Jura,
A. A. Kiselev,
T. D. Ladd,
S. T. Merkel,
I. Milosavljevic,
E. J. Pritchett,
M. T. Rakher,
R. S. Ross,
A. E. Schmitz,
A. Smith,
J. A. Wright,
M. F. Gyure,
A. T. Hunter
Abstract:
We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunn…
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We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of five in comparison to operation near a charge-state anti-crossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations.
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Submitted 21 March, 2016; v1 submitted 5 August, 2015;
originally announced August 2015.
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Optically Loaded Semiconductor Quantum Memory Register
Authors:
Danny Kim,
Andrey A. Kiselev,
Richard S. Ross,
Matthew T. Rakher,
Cody Jones,
Thaddeus D. Ladd
Abstract:
We propose and analyze an optically loaded quantum memory exploiting capacitive coupling between self-assembled quantum dot molecules and electrically gated quantum dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a d…
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We propose and analyze an optically loaded quantum memory exploiting capacitive coupling between self-assembled quantum dot molecules and electrically gated quantum dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and we outline its operation and fabrication. We provide self-consistent Poisson-Schroedinger simulations to establish the design viability and refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.
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Submitted 30 July, 2015; v1 submitted 6 May, 2015;
originally announced May 2015.
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Gate-tunable high mobility remote-doped InSb/In_{1-x}Al_{x}Sb quantum well heterostructures
Authors:
Wei Yi,
Andrey A. Kiselev,
Jacob Thorp,
Ramsey Noah,
Binh-Minh Nguyen,
Steven Bui,
Rajesh D. Rajavel,
Tahir Hussain,
Mark Gyure,
Philip Kratz,
Qi Qian,
Michael J. Manfra,
Vlad S. Pribiag,
Leo P. Kouwenhoven,
Charles M. Marcus,
Marko Sokolich
Abstract:
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is…
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Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1Ω \cdot mm is achieved at 1.8K.
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Submitted 23 March, 2015;
originally announced March 2015.
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Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells
Authors:
Fanming Qu,
Arjan J. A. Beukman,
Stevan Nadj-Perge,
Michael Wimmer,
Binh-Minh Nguyen,
Wei Yi,
Jacob Thorp,
Marko Sokolich,
Andrey A. Kiselev,
Michael J. Manfra,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and c…
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Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual-gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states.
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Submitted 19 February, 2015;
originally announced February 2015.
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Undoped accumulation-mode Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Kevin Eng,
Richard S. Ross,
Thomas M. Hazard,
Kevin S. Holabird,
Biqin Huang,
Andrey A. Kiselev,
Peter W. Deelman,
Leslie D. Warren,
Ivan Milosavljevic,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlap** gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrate…
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We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlap** gate stack in which each electrostatic gate has a dominant and unique function -- control of individual quantum dot occupancies and of lateral tunneling into and between dots. Control of the tunneling rate between a dot and an electron bath is demonstrated over more than nine orders of magnitude and independently confirmed by direct measurement within the bandwidth of our amplifiers. The inter-dot tunnel coupling at the (0,2)<-->(1,1) charge configuration anti-crossing is directly measured to quantify the control of a single inter-dot tunnel barrier gate. A simple exponential dependence is sufficient to describe each of these tunneling processes as a function of the controlling gate voltage.
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Submitted 4 August, 2014;
originally announced August 2014.
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The binary asteroid 22 Kalliope: Linus orbit determination on the basis of speckle interferometric observations
Authors:
I. A. Sokova,
E. N. Sokov,
E. A. Roschina,
D. A. Rastegaev,
A. A. Kiselev,
Yu. Yu. Balega,
D. L. Gorshanov,
E. V. Malogolovets,
V. V. Dyachenko,
A. F. Maksimov
Abstract:
In this paper we present the orbital elements of Linus satellite of 22 Kalliope asteroid. Orbital element determination is based on the speckle interferometry data obtained with the 6-meter BTA telescope operated by SAO RAS. We processed 9 accurate positions of Linus orbiting around the main component of 22 Kalliope between 10 and 16 December, 2011. In order to determine the orbital elements of th…
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In this paper we present the orbital elements of Linus satellite of 22 Kalliope asteroid. Orbital element determination is based on the speckle interferometry data obtained with the 6-meter BTA telescope operated by SAO RAS. We processed 9 accurate positions of Linus orbiting around the main component of 22 Kalliope between 10 and 16 December, 2011. In order to determine the orbital elements of the Linus we have applied the direct geometric method. The formal errors are about 5 mas. This accuracy makes it possible to study the variations of the Linus orbital elements influenced by different perturbations over the course of time. Estimates of six classical orbital elements, such as the semi-major axis of the Linus orbit a = 1109 +\- 6 km, eccentricity e = 0.016 +\- 0.004, inclination i = 101° +\- 1° to the ecliptic plane and others, are presented in this work.
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Submitted 5 May, 2014;
originally announced May 2014.
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Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Authors:
Matthew G. Borselli,
Kevin Eng,
Edward T. Croke,
Brett M. Maune,
Biqin Huang,
Richard S. Ross,
Andrey A. Kiselev,
Peter W. Deelman,
Ivan Alvarado-Rodriguez,
Adele E. Schmitz,
Marko Sokolich,
Kevin S. Holabird,
Thomas M. Hazard,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double d…
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We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devices to zero charge occupancy. Measurements and simulations confirm that the energetics are determined by the gate-induced electrostatic potentials. Pauli spin blockade has been observed via transport through the double dot in the two electron configuration, a critical step in performing coherent spin manipulations in Si.
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Submitted 30 June, 2011;
originally announced June 2011.
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Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Authors:
Matthew G. Borselli,
Richard S. Ross,
Andrey A. Kiselev,
Edward T. Croke,
Kevin S. Holabird,
Peter W. Deelman,
Leslie D. Warren,
Ivan Alvarado-Rodriguez,
Ivan Milosavljevic,
Fiona C. Ku,
Wah S. Wong,
Adele E. Schmitz,
Marko Sokolich,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings…
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We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiable shell structure. Magnetospectroscopy measurements show that two Si-based devices possess a singlet N =2 ground state at low magnetic field and therefore the two-fold valley degeneracy is lifted. The valley splittings in these two devices were 120 and 270 μeV, suggesting the presence of atomically sharp interfaces in our heterostructures.
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Submitted 13 April, 2011; v1 submitted 6 December, 2010;
originally announced December 2010.
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Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots
Authors:
Robert R. Hayes,
Andrey A. Kiselev,
Matthew G. Borselli,
Steven S. Bui,
Edward T. Croke III,
Peter W. Deelman,
Brett M. Maune,
Ivan Milosavljevic,
Jeong-Sun Moon,
Richard S. Ross,
Adele E. Schmitz,
Mark F. Gyure,
Andrew T. Hunter
Abstract:
We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The l…
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We have observed the Zeeman-split excited state of a spin-1/2 multi-electron Si/SiGe depletion quantum dot and measured its spin relaxation time T1 in magnetic fields up to 2 T. Using a new step-and-reach technique, we have experimentally verified the g-value of 2.0 +/- 0.1 for the observed Zeeman doublet. We have also measured T1 of single- and multi-electron spins in InGaAs quantum dots. The lifetimes of the Si/SiGe system are appreciably longer than those for InGaAs dots for comparable magnetic field strengths, but both approach one second at sufficiently low fields (< 1 T for Si, and < 0.2 T for InGaAs).
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Submitted 2 August, 2009;
originally announced August 2009.
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Comment on ``Spin and cyclotron energies of electrons in GaAs/GaAlAs quantum wells''
Authors:
A. A. Kiselev,
E. L. Ivchenko
Abstract:
In a recent publication, Pfeffer and Zawadzki [cond-mat/0607150; Phys. Rev. B 74, 115309 (2006)] attempted a calculation of electron g factor in III-V heterostructures. The authors emphasize that their outcome is in strong discrepancy with our original result [Ivchenko and Kiselev, Sov. Phys. Semicond. 26, 827 (1992)] and readily conclude that ``the previous theory of the g factor in heterostruc…
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In a recent publication, Pfeffer and Zawadzki [cond-mat/0607150; Phys. Rev. B 74, 115309 (2006)] attempted a calculation of electron g factor in III-V heterostructures. The authors emphasize that their outcome is in strong discrepancy with our original result [Ivchenko and Kiselev, Sov. Phys. Semicond. 26, 827 (1992)] and readily conclude that ``the previous theory of the g factor in heterostructures is inadequate''. We show here that the entire discrepancy can be tracked down to an additional contribution missing in the incomplete elimination procedure of Pfeffer and Zawadzki. This mistake equally affects their ``exact'' and approximate results. When the overlooked terms stemming from the nondiagonal Zeeman interaction between light hole and spin-orbit-split valence states are taken into account in the effective electron dispersion, the results of the both approaches applied to the three-level kp model become identical.
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Submitted 2 February, 2007;
originally announced February 2007.
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Universal behavior of the electron g-factor in GaAs/AlGaAs quantum wells
Authors:
I. A. Yugova,
A. Greilich,
D. R. Yakovlev,
A. A. Kiselev,
M. Bayer,
V. V. Petrov,
Yu. K. Dolgikh,
D. Reuter,
A. D. Wieck
Abstract:
The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/Al_xGa_{1-x}As quantum wells have been measured by spin-beat spectroscopy based on a time-resolved Kerr rotation technique. The experimental data are in good agreement with theoretical predictions. The model accurately accounts for the large electron energies above the GaAs conduction band bottom,…
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The Zeeman splitting and the underlying value of the g-factor for conduction band electrons in GaAs/Al_xGa_{1-x}As quantum wells have been measured by spin-beat spectroscopy based on a time-resolved Kerr rotation technique. The experimental data are in good agreement with theoretical predictions. The model accurately accounts for the large electron energies above the GaAs conduction band bottom, resulting from the strong quantum confinement. In the tracked range of optical transition energies E from 1.52 to 2.0eV, the electron g-factor along the growth axis follows closely the universal dependence g_||(E)= -0.445 + 3.38(E-1.519)-2.21(E-1.519)^2 (with E measured in eV); and this universality also embraces Al_xGa_{1-x}As alloys. The in-plane g-factor component deviates notably from the universal curve, with the degree of deviation controlled by the structural anisotropy.
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Submitted 24 October, 2006;
originally announced October 2006.
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A prohibition of equilibrium spin currents in multi-terminal ballistic devices
Authors:
A. A. Kiselev,
K. W. Kim
Abstract:
We show that in the multi-terminal ballistic devices with intrinsic spin-orbit interaction connected to normal metal contacts there are no equilibrium spin currents present at any given electron energy. Obviously, this statement holds also after the integration over all occupied states. Based on the proof of this fact, a number of scenarios involving nonequilibrium spin currents is identified an…
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We show that in the multi-terminal ballistic devices with intrinsic spin-orbit interaction connected to normal metal contacts there are no equilibrium spin currents present at any given electron energy. Obviously, this statement holds also after the integration over all occupied states. Based on the proof of this fact, a number of scenarios involving nonequilibrium spin currents is identified and further analyzed. In particular, it is shown that an arbitrary two-terminal device cannot polarize transient current. The same is true for the output terminal of an N-terminal device when all N-1 inputs are connected in parallel.
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Submitted 2 November, 2004;
originally announced November 2004.
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Electron Spin Relaxation under Drift in GaAs
Authors:
E. A. Barry,
A. A. Kiselev,
K. W. Kim
Abstract:
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or non-zero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for…
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Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of moderate drift fields and/or non-zero injection energies. For relatively low fields (a couple of kV/cm), a substantial amount of spin polarization is preserved for several microns at 300 K. However, it is also found that the spin relaxation rate increases rapidly with the drift field, scaling as the square of the electron wavevector in the direction of the field. When the electrons are injected with a high energy, a pronounced decrease is observed in the spin relaxation length due to an initial increase in the spin precession frequency. Hence, high-field or high-energy transport conditions may not be desirable for spin-based devices.
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Submitted 10 April, 2003;
originally announced April 2003.
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T-shaped spin filter with a ring resonator
Authors:
A. A. Kiselev,
K. W. Kim
Abstract:
A planar ballistic structure is predicted to be highly effective in filtering electron spin from an unpolarized source into two output fluxes with the opposite and practically pure spin polarizations. The operability of the proposed device relies on the peculiar spin-dependent transmission properties of the T-shaped connector in the presence of the Rashba spin-orbit interaction as well as the di…
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A planar ballistic structure is predicted to be highly effective in filtering electron spin from an unpolarized source into two output fluxes with the opposite and practically pure spin polarizations. The operability of the proposed device relies on the peculiar spin-dependent transmission properties of the T-shaped connector in the presence of the Rashba spin-orbit interaction as well as the difference in the dynamic phase gains of the two alternative paths around the ring resonator through upper and lower branches for even and odd eigenmodes.
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Submitted 12 March, 2002;
originally announced March 2002.
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Electron g-factor Engineering in III-V Semiconductors for Quantum Communications
Authors:
Hideo Kosaka,
Andrey A. Kiselev,
Filipp A. Baron,
Ki Wook Kim,
Eli Yablonovitch
Abstract:
An entanglement-preserving photo-detector converts photon polarization to electron spin. Up and down spin must respond equally to oppositely polarized photons, creating a requirement for degenerate spin energies, ge=0 for electrons. We present a plot of ge-factor versus lattice constant, analogous to bandgap versus lattice constant, that can be used for g-factor engineering of III-V alloys and q…
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An entanglement-preserving photo-detector converts photon polarization to electron spin. Up and down spin must respond equally to oppositely polarized photons, creating a requirement for degenerate spin energies, ge=0 for electrons. We present a plot of ge-factor versus lattice constant, analogous to bandgap versus lattice constant, that can be used for g-factor engineering of III-V alloys and quantum wells
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Submitted 22 February, 2001; v1 submitted 9 February, 2001;
originally announced February 2001.
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Progressive suppression of spin relaxation in 2D channels of finite width
Authors:
A. A. Kiselev,
K. W. Kim
Abstract:
We have investigated spatio-temporal kinetics of electron spin polarization in semiconductor narrow 2D strip and explored the ability to manipulate spin relaxation. Information about spin of the conduction electrons and mechanisms of spin rotation is incorporated into transport Monte Carlo simulation program. A model problem, involving linear-in-k splitting of the conduction band, responsible fo…
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We have investigated spatio-temporal kinetics of electron spin polarization in semiconductor narrow 2D strip and explored the ability to manipulate spin relaxation. Information about spin of the conduction electrons and mechanisms of spin rotation is incorporated into transport Monte Carlo simulation program. A model problem, involving linear-in-k splitting of the conduction band, responsible for the D'yakonov-Perel' mechanism of spin relaxation in the zinc-blende semiconductors and heterostructures, is solved numerically to yield the decay of spin polarization of an ensemble of electrons in the 2D channel of finite width. For very wide channels, a conventional 2D value of spin relaxation is obtained. With decreasing channel width the relaxation time soares rapidly by orders of magnitude. Surprisingly, the cross-over point between 2D and quasi-1D behavior is found to be at tens of electron mean-free paths. Thus, classically wide channels can effectively suppress electron spin relaxation.
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Submitted 28 October, 1999;
originally announced October 1999.
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Large Skyrmions in an Al(0.13)Ga(0.87)As Quantum Well
Authors:
S. P. Shukla,
M. Shayegan,
S. R. Parihar,
S. A. Lyon,
N. R. Cooper,
A. A. Kiselev
Abstract:
We report tilted-field magnetotransport measurements of two-dimensional electron systems in a 200 Angstrom-wide Al(0.13)Ga(0.87)As quantum well. We extract the energy gap for the quantum Hall state at Landau level filling ν=1 as a function of the tilt angle. The relatively small effective Lande g-factor (g ~ 0.043) of the structure leads to skyrmionic excitations composed of the largest number o…
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We report tilted-field magnetotransport measurements of two-dimensional electron systems in a 200 Angstrom-wide Al(0.13)Ga(0.87)As quantum well. We extract the energy gap for the quantum Hall state at Landau level filling ν=1 as a function of the tilt angle. The relatively small effective Lande g-factor (g ~ 0.043) of the structure leads to skyrmionic excitations composed of the largest number of spins yet reported (s ~ 50). Although consistent with the skyrmion size observed, Hartree-Fock calculations, even after corrections, significantly overestimate the energy gaps over the entire range of our data.
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Submitted 24 October, 1999; v1 submitted 30 August, 1999;
originally announced August 1999.
