Showing 1–1 of 1 results for author: Kirsch, P D
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MoS2 Field-effect Transistors with Graphene/Metal Heterocontacts
Authors:
Yuchen Du,
Lingming Yang,
**gyun Zhang,
Han Liu,
Kausik Majumdar,
Paul D. Kirsch,
Peide D. Ye
Abstract:
For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 μm gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contact…
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For the first time, n-type few-layer MoS2 field-effect transistors with graphene/Ti as the hetero-contacts have been fabricated, showing more than 160 mA/mm drain current at 1 μm gate length with an on-off current ratio of 107. The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in on-resistance and a 3.3 times improvement in contact resistance with hetero-contacts compared to the MoS2 FETs without graphene contact layer. Temperature dependent study on MoS2/graphene hetero-contacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene /metal hetero-contacts structure.
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Submitted 10 May, 2014; v1 submitted 21 March, 2014;
originally announced March 2014.
