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Unidirectional Kondo scattering in layered NbS2
Authors:
Edoardo Martino,
Carsten Putzke,
Markus König,
Philip Moll,
Helmuth Berger,
David LeBoeuf,
Maxime Leroux,
Cyril Proust,
Ana Akrap,
Holm Kirmse,
Christoph Koch,
ShengNan Zhang,
QuanSheng Wu,
Oleg V. Yazyev,
László Forró,
Konstantin Semeniuk
Abstract:
Crystalline defects can modify quantum interactions in solids, causing unintuitive, even favourable, properties such as quantum Hall effect or superconducting vortex pinning. Here we present another example of this notion - an unexpected unidirectional Kondo scattering in single crystals of 2H-NbS2. This manifests as a pronounced low-temperature enhancement in the out-of-plane resistivity and ther…
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Crystalline defects can modify quantum interactions in solids, causing unintuitive, even favourable, properties such as quantum Hall effect or superconducting vortex pinning. Here we present another example of this notion - an unexpected unidirectional Kondo scattering in single crystals of 2H-NbS2. This manifests as a pronounced low-temperature enhancement in the out-of-plane resistivity and thermopower below 40 K, hidden for the in-plane charge transport. The anomaly can be suppressed by the c-axis-oriented magnetic field, but is unaffected by field applied along the planes. The magnetic moments originate from layers of 1T-NbS2, which inevitably form during the growth, undergoing a charge-density-wave reconstruction with each superlattice cell (David-star-shaped cluster of Nb atoms) hosting a localised spin. Our results demonstrate the unique and highly anisotropic response of a spontaneously formed Kondo lattice heterostructure, intercalated in a layered conductor.
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Submitted 20 April, 2021; v1 submitted 19 April, 2021;
originally announced April 2021.
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Structural properties of Co$_{2}$TiSi films on GaAs(001)
Authors:
B Jenichen,
J Herfort,
M Hanke,
U Jahn,
X Kong,
M T Dau,
A Trampert,
H Kirmse,
S C Erwin
Abstract:
Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is foun…
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Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13~nm these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found \textit{L$2_1$} and \textit{B}2 ordered regions, however the [Co]/[Ti]--ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic \textit{B}2--ordering with the best order parallel to the axes of the columns.
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Submitted 11 July, 2019;
originally announced July 2019.
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Ordered structure of FeGe$_2$ formed during solid-phase epitaxy
Authors:
B Jenichen,
M Hanke,
S Gaucher,
A Trampert,
J Herfort,
H Kirmse,
B Haas,
E Willinger,
X Huang,
S C Erwin
Abstract:
Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffraction. The Ge(Fe,Si) films crystallize in the well oriented, layered tetragonal structure FeGe$_{2}$ with space group P4mm. This kind of structure does…
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Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffraction. The Ge(Fe,Si) films crystallize in the well oriented, layered tetragonal structure FeGe$_{2}$ with space group P4mm. This kind of structure does not exist as a bulk material and is stabilized by solid phase epitaxy of Ge on Fe$_{3}$Si. We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.
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Submitted 11 July, 2019;
originally announced July 2019.
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Pulsed thermal deposition of binary and ternary transition metal dichalcogenide monolayers and heterostructures
Authors:
Niklas Mutz,
Tino Meisel,
Holm Kirmse,
Soohyung Park,
Nikolai Severin,
Jürgen P. Rabe,
Emil List-Kratochvil,
Norbert Koch,
Christoph Koch,
Sylke Blumstengel,
Sergey Sadofev
Abstract:
Application of transition metal dichalcogenides (TMDC) in photonic, optoelectronic or valleytronic devices requires the growth of continuous monolayers, heterostructures and alloys of different materials in a single process. We present a facile pulsed thermal deposition method which provides precise control over layer thickness and stoichiometry of two-dimensional systems. The versatility of the m…
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Application of transition metal dichalcogenides (TMDC) in photonic, optoelectronic or valleytronic devices requires the growth of continuous monolayers, heterostructures and alloys of different materials in a single process. We present a facile pulsed thermal deposition method which provides precise control over layer thickness and stoichiometry of two-dimensional systems. The versatility of the method is demonstrated on ternary monolayers of Mo$_{1-x}$W$_{x}$S$_{2}$ and on heterostructures combining metallic TaS$_{2}$ and semiconducting MoS$_{2}$ layers. The fabricated ternary monolayers cover the entire composition range of $x$ = 0...1 without phase separation. Band gap engineering and control over the spin-orbit coupling strength is demonstrated by absorption and photoluminescence spectroscopy. Vertical heterostructures are grown without intermixing. The formation of clean and atomically abrupt interfaces is evidenced by high-resolution transmission electron microscopy. Since both the metal components as well as the chalcogenides are thermally evaporated complex alloys and heterostructures can thus be prepared.
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Submitted 11 February, 2019; v1 submitted 19 November, 2018;
originally announced November 2018.
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General Synthetic Route Towards Highly Dispersed Metal Clusters Enabled by Poly(ionic liquid)s
Authors:
Jian-Ke Sun,
Zdravko Kochovski,
Wei-Yi Zhang,
Holm Kirmse,
Yan Lu,
Markus Antonietti,
Jiayin Yuan
Abstract:
The capability to synthesize a broad spectrum of metal clusters (MCs) with their size controllable in a subnanometer scale presents an enticing prospect for exploring nanosize-dependent properties. Here we report an innovative design of a cap** agent from a polytriazolium poly(ionic liquid) (PIL) in a vesicular form in solution that allows for crafting a variety of MCs including transition metal…
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The capability to synthesize a broad spectrum of metal clusters (MCs) with their size controllable in a subnanometer scale presents an enticing prospect for exploring nanosize-dependent properties. Here we report an innovative design of a cap** agent from a polytriazolium poly(ionic liquid) (PIL) in a vesicular form in solution that allows for crafting a variety of MCs including transition metals, noble metals, and their bimetallic alloy with precisely controlled sizes (~ 1 nm) and record-high catalytic performance. The ultrastrong stabilization power is result of an unusual synergy between the conventional binding sites in the heterocyclic cations in PIL, and an in-situ generated polycarbene structure induced simultaneously to the reduction reaction. INTRODUCTION
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Submitted 30 September, 2018;
originally announced October 2018.
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Atomic signatures of local environment from core-level spectroscopy in $β$-Ga$_2$O$_3$
Authors:
Caterina Cocchi,
Hannes Zschiesche,
Dmitrii Nabok,
Anna Mogilatenko,
Martin Albrecht,
Zbigniew Galazka,
Holm Kirmse,
Claudia Draxl,
Christoph Koch
Abstract:
We present a joint theoretical and experimental study on core-level excitations from the oxygen $K$ edge of $β$-Ga$_2$O$_3$. A detailed analysis of the electronic structure reveals the importance of O-Ga hybridization effects in the conduction region. The spectrum from O 1$s$ core electrons is dominated by excitonic effects, which overall redshift the absorption onset by 0.5 eV, and significantly…
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We present a joint theoretical and experimental study on core-level excitations from the oxygen $K$ edge of $β$-Ga$_2$O$_3$. A detailed analysis of the electronic structure reveals the importance of O-Ga hybridization effects in the conduction region. The spectrum from O 1$s$ core electrons is dominated by excitonic effects, which overall redshift the absorption onset by 0.5 eV, and significantly redistribute the intensity to lower energies. Analysis of the spectra obtained within many-body perturbation theory reveals atomic fingerprints of the inequivalent O atoms. From the comparison of energy-loss near-edge fine-structure (ELNES) spectra computed with respect to different crystal planes, with measurements recorded under the corresponding diffraction conditions, we show how the spectral contributions of specific O atoms can be enhanced while quenching others. These results suggest ELNES, combined with ab initio many-body theory, as a very powerful technique to characterize complex systems, with sensitivity to individual atomic species and to their local environment.
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Submitted 30 August, 2016; v1 submitted 19 May, 2016;
originally announced May 2016.
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Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001)
Authors:
Bernd Jenichen,
Uwe Jahn,
Andrei Nikulin,
Jens Herfort,
Holm Kirmse
Abstract:
Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001) oriented single crystal. The subsequent Al film grows almost 111 oriented in a fibre texture although the underlying Fe3Si is exactly (001) oriented. The growth in th…
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Fe3Si/Al/Fe3Si/GaAs(001) structures were deposited by molecular-beam epitaxy and characterized by transmission and scanning electron microscopy, and x-ray diffraction. The first Fe3Si film on GaAs(001) is growing epitaxially as (001) oriented single crystal. The subsequent Al film grows almost 111 oriented in a fibre texture although the underlying Fe3Si is exactly (001) oriented. The growth in this orientation is triggered by a thin transition region which is formed at the Fe3Si/Al interface. In the end after the growth of the second Fe3Si layer on top of the Al the final properties of the whole stack depend on the substrate temperature T_S during deposition of the last film. The upper Fe3Si films are mainly 110 oriented although they are poly-crystalline. At lower T_S, around room temperature, all the films retain their original structural properties.
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Submitted 10 July, 2015; v1 submitted 17 June, 2015;
originally announced June 2015.
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Nucleation, growth, and dissolution of Ag nanostructures formed in nanotubular J-aggregates of amphiphilic cyanine dyes
Authors:
Egon Steeg,
Frank Polzer,
Holm Kirmse,
Yan Qiao,
Jürgen P. Rabe,
Stefan Kirstein
Abstract:
The synthesis of silver nanowires in solution phase is of great interest because of their applicability for fabrication of plasmonic devices. Silver nanowires with diameters of 6.5 nm and length exceeding microns are synthesized in aqueous solution by reduction of silver ions within the nanotubular J-aggregates of an amphiphilic cyanine dye. The time scale of the growth of the nanowires is of the…
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The synthesis of silver nanowires in solution phase is of great interest because of their applicability for fabrication of plasmonic devices. Silver nanowires with diameters of 6.5 nm and length exceeding microns are synthesized in aqueous solution by reduction of silver ions within the nanotubular J-aggregates of an amphiphilic cyanine dye. The time scale of the growth of the nanowires is of the order of hours and days which provides the unique possibility to investigate the nucleation, growth, and dissolution of the nanowires by direct imaging using transmission electron microscopy. It is found that the initial nucleation and formation of seeds of silver nanostructures occurs randomly at the outer surface of the aggregates or within the hollow tube. The growth of the seeds within the inner void of the tubular structures to nanowires indicates transport of silver atoms, ions, or clusters through the bilayer wall of the molecular aggregates. This permeability of the aggregates for silver can be utilized to dissolve the preformed silver wires by oxidative etching using Cl- ions from dissolved NaCl. Although the nanosystem presented here is a conceptual rather simple organic-inorganic hybrid, it exhibits growth and dissolution phenomena not expected for a macroscopic system. These mechanisms are of general importance for both, the growth and the usage of such metal nanowires, e.g. for plasmonic applications.
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Submitted 10 February, 2015; v1 submitted 12 January, 2015;
originally announced January 2015.
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Nanohybrids from Nanotubular J-Aggregates and Transparent Silica Nanoshells
Authors:
Yan Qiao,
Frank Polzer,
Holm Kirmse,
Stefan Kirstein,
Jürgen P. Rabe
Abstract:
Organic-inorganic nanohybrids have been synthesized by in-situ coating of self-assembled, nanotubular J-aggregates with helically wound silica ribbons. The J-aggregates retain their outstanding optical properties in the nanohybrids, but with higher mechanical stiffness, better processability, and an improved stability against photo-bleaching and chemical ambients.
Organic-inorganic nanohybrids have been synthesized by in-situ coating of self-assembled, nanotubular J-aggregates with helically wound silica ribbons. The J-aggregates retain their outstanding optical properties in the nanohybrids, but with higher mechanical stiffness, better processability, and an improved stability against photo-bleaching and chemical ambients.
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Submitted 2 February, 2015; v1 submitted 10 January, 2015;
originally announced January 2015.
