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A Bayesian Method to Mitigate the Effects of Unmodelled Time-Varying Systematics for 21-cm Cosmology Experiments
Authors:
Christian J. Kirkham,
Dominic J. Anstey,
Eloy de Lera Acedo
Abstract:
Radio observations of the neutral hydrogen signal from the Cosmic Dawn and Epoch of Reionisation have helped to provide constraints on the properties of the first stars and galaxies. Since this global 21-cm cosmological signal from the Cosmic Dawn is effectively constant on observing timescales and since effects resulting from systematics will vary with time, the effects of these systematics can b…
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Radio observations of the neutral hydrogen signal from the Cosmic Dawn and Epoch of Reionisation have helped to provide constraints on the properties of the first stars and galaxies. Since this global 21-cm cosmological signal from the Cosmic Dawn is effectively constant on observing timescales and since effects resulting from systematics will vary with time, the effects of these systematics can be mitigated without the need for a model of the systematic. We present a method to account for unmodelled time-varying systematics in 21-cm radio cosmology experiments using a squared-exponential Gaussian process kernel to account for correlations between time bins in a fully Bayesian way. We find by varying the model parameters of a simulated systematic that the Gaussian process method improves our ability to recover the signal parameters by widening the posterior in the presence of a systematic and reducing the bias in the mean fit parameters. When varying the amplitude of a model sinusoidal systematic between 0.25 and 2.00 times the 21-cm signal amplitude and the period between 0.5 and 4.0 times the signal width, we find on average a 5% improvement in the root mean squared error of the fitted signal. We can use the fitted Gaussian process hyperparameters to identify the presence of a systematic in the data, demonstrating the method's utility as a diagnostic tool. Furthermore, we can use Gaussian process regression to calculate a mean fit to the residuals over time, providing a basis for producing a model of the time-varying systematic.
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Submitted 27 October, 2023;
originally announced October 2023.
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Episodic fluid venting from sedimentary basins fuelled by pressurised mudstones
Authors:
Luke M. Kearney,
Richard F. Katz,
Christopher W. MacMinn,
Chris Kirkham,
Joe Cartwright
Abstract:
Subsurface sandstone reservoirs sealed by overlying, low-permeability layers provide capacity for long-term sequestration of anthropogenic waste. Leakage can occur if reservoir pressures rise sufficiently to fracture the seal. Such pressures can be generated within the reservoir by vigorous injection of waste or, over thousands of years, by natural processes. In either case, the precise role of in…
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Subsurface sandstone reservoirs sealed by overlying, low-permeability layers provide capacity for long-term sequestration of anthropogenic waste. Leakage can occur if reservoir pressures rise sufficiently to fracture the seal. Such pressures can be generated within the reservoir by vigorous injection of waste or, over thousands of years, by natural processes. In either case, the precise role of intercalated mudstones in the long-term evolution of reservoir pressure remains unclear; these layers have variously been viewed as seals, as pressure sinks or as pressure sources. Here, we use the geological record of episodic fluid venting in the Levant Basin to provide striking evidence for the pressure-source hypothesis. We use a Bayesian framework to combine recently published venting data, which record critical subsurface pressures since $\sim$2~Ma, with a stochastic model of pressure evolution to infer a pressure-recharge rate of $\sim$30~MPa/Myr. To explain this large rate, we quantify and compare a range of candidate mechanisms. We find that poroelastic pressure diffusion from mudstones provides the most plausible explanation for these observations, amplifying the $\sim$3~MPa/Myr recharge caused primarily by tectonic compression. Since pressurised mudstones are ubiquitous in sedimentary basins, pressure diffusion from mudstones is likely to promote seal failure globally.
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Submitted 2 February, 2024; v1 submitted 29 June, 2023;
originally announced June 2023.
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Episodic, compression-driven fluid venting in layered sedimentary basins
Authors:
Luke M. Kearney,
Christopher W. MacMinn,
Richard F. Katz,
Chris Kirkham,
Joe Cartwright
Abstract:
Fluid venting phenomena are prevalent in sedimentary basins globally. Offshore, these localised fluid-expulsion events are archived in the geologic record by the resulting pockmarks at the sea-floor. Venting is widely interpreted to occur via hydraulic fracturing, which requires near-lithostatic pore pressures for initiation. One common driver for these extreme pressures is horizontal tectonic com…
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Fluid venting phenomena are prevalent in sedimentary basins globally. Offshore, these localised fluid-expulsion events are archived in the geologic record by the resulting pockmarks at the sea-floor. Venting is widely interpreted to occur via hydraulic fracturing, which requires near-lithostatic pore pressures for initiation. One common driver for these extreme pressures is horizontal tectonic compression, which pressurises the entire sedimentary column over a wide region. Fluid expulsion leads to a sudden, local relief of this pressure, which then gradually recharges through continued compression, leading to episodic venting. Pressure recharge will also occur through pressure diffusion from neighbouring regions that remain pressurised, but the combined role of compression and pressure diffusion in episodic venting has not previously been considered. Here, we develop a novel poroelastic model for episodic, compression-driven venting. We show that compression and pressure diffusion together set the resulting venting period. We derive a simple analytical expression for this venting period, demonstrating that pressure diffusion can significantly reduce the venting period associated with a given rate of compression. Our expression allows this rate of compression to be inferred from observations of episodic venting. We conclude that pressure diffusion is a major contributor to episodic fluid venting in mudstone-dominated basins.
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Submitted 31 May, 2023; v1 submitted 7 October, 2022;
originally announced October 2022.
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Charging/discharging mechanism in Mg3Bi2 anode for Mg-ion batteries; The role of the spin-orbit coupling
Authors:
M. Hussein N. Assadi,
Christopher J. Kirkham,
Ikutaro Hamada,
Dorian A. H. Hanaor
Abstract:
Using density functional calculations, we examine insertion/extraction of Mg ions in Mg3Bi2, an interesting Mg-ion battery anode. We found that a (1 1 0) facet is the most stable termination. Vacating a Mg2+ ion from the octahedral site is more favourable for both surface and bulk regions of the material. However, the diffusion barriers among the tetrahedral sites are around 3 times smaller than t…
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Using density functional calculations, we examine insertion/extraction of Mg ions in Mg3Bi2, an interesting Mg-ion battery anode. We found that a (1 1 0) facet is the most stable termination. Vacating a Mg2+ ion from the octahedral site is more favourable for both surface and bulk regions of the material. However, the diffusion barriers among the tetrahedral sites are around 3 times smaller than those among octahedral sites. Consequently, during the magnesiation/demagnesiation process, Mg ions first vacate the octahedral sites and then diffuse through the tetrahedral sites. The spin-orbit interaction lowers Mg's vacancy formation energy but has a minor effect on diffusion barriers.
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Submitted 23 September, 2022;
originally announced September 2022.
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Towards surface diffusion potential map** on atomic length scale
Authors:
Renan Villarreal,
Christopher J. Kirkham,
Alessandro Scarfato,
David R. Bowler,
Christoph Renner
Abstract:
The surface diffusion potential landscape plays an essential role in a number of physical and chemical processes such as self-assembly and catalysis. Diffusion energy barriers can be calculated theoretically for simple systems, but there is currently no experimental technique to systematically measure them on the relevant atomic length scale. Here, we introduce an atomic force microscopy based met…
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The surface diffusion potential landscape plays an essential role in a number of physical and chemical processes such as self-assembly and catalysis. Diffusion energy barriers can be calculated theoretically for simple systems, but there is currently no experimental technique to systematically measure them on the relevant atomic length scale. Here, we introduce an atomic force microscopy based method to semiquantitatively map the surface diffusion potential on an atomic length scale. In this proof of concept experiment, we show that the atomic force microscope dam** signal at constant frequency-shift can be linked to nonconservative processes associated with the lowering of energy barriers and compared with calculated single-atom diffusion energy barriers.
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Submitted 26 May, 2019; v1 submitted 6 December, 2018;
originally announced December 2018.
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Atomic layer do** of Mn magnetic impurities from surface chains at a Ge/Si hetero-interface
Authors:
Koichi Murata,
Christopher Kirkham,
Satoshi Tsubomatsu,
Takashi Kanazawa,
Kiyofumi Nitta,
Yasuko Terada,
Tomoya Uruga,
Koh-ichi Nittoh,
David R. Bowler,
Kazushi Miki
Abstract:
We realize Mn $δ$-do** into Si and Si/Ge interfaces using Mn atomic chains on Si(001). Highly sensitive X-ray absorption fine structure techniques reveal that encapsulation at room temperature prevents the formation of silicides / germanides whilst maintaining one dimensional anisotropic structures. This is revealed by studying both the incident X-ray polarization dependence and post-annealing e…
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We realize Mn $δ$-do** into Si and Si/Ge interfaces using Mn atomic chains on Si(001). Highly sensitive X-ray absorption fine structure techniques reveal that encapsulation at room temperature prevents the formation of silicides / germanides whilst maintaining one dimensional anisotropic structures. This is revealed by studying both the incident X-ray polarization dependence and post-annealing effects. Density functional theory calculations suggest that Mn atoms are located at substitutional sites, and show good agreement with experiment. A comprehensive magnetotransport study reveals magnetic ordering within the Mn $δ$-doped layer, which is present at around 120\,K. We demonstrate that do** methods based on the burial of surface nanostructures allows for the realization of systems for which conventional do** methods fail.
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Submitted 28 November, 2017;
originally announced November 2017.
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Electronic coupling between Bi nanolines and the Si(001) substrate: An experimental and theoretical study
Authors:
M. Longobardi,
C. J. Kirkham,
R. Villarreal,
S. A. Koster,
D. R. Bowler,
Ch. Renner
Abstract:
Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the electronic properties of Bi nanolines on clean Si(001) several different contributions must be accounted for. Scanning tunneling microscopy reveals a variety of…
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Atomic nanolines are one dimensional systems realized by assembling many atoms on a substrate into long arrays. The electronic properties of the nanolines depend on those of the substrate. Here, we demonstrate that to fully understand the electronic properties of Bi nanolines on clean Si(001) several different contributions must be accounted for. Scanning tunneling microscopy reveals a variety of different patterns along the nanolines as the imaging bias is varied. We observe an electronic phase shift of the Bi dimers, associated with imaging atomic p-orbitals, and an electronic coupling between the Bi nanoline and neighbouring Si dimers, which influences the appearance of both. Understanding the interplay between the Bi nanolines and Si substrate could open a novel route to modifying the electronic properties of the nanolines.
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Submitted 5 December, 2017; v1 submitted 26 October, 2017;
originally announced October 2017.
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Sub-atomic electronic feature from dynamic motion of Si dimer defects in bismuth nanolines on Si(001)
Authors:
C. J. Kirkham,
M. Longobardi,
S. A. Koster,
Ch. Renner,
D. R. Bowler
Abstract:
Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect free bismuth nanolines self-assembled on Si(001). They appear as subatomic thin lines perpendicular to the bismuth nanoline at positive biases and as atomic size beads at negative biases. Density functional theory (DFT) simulations show that these features can be attributed to buckled Si dimers substituting for…
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Scanning tunneling microscopy (STM) reveals unusual sharp features in otherwise defect free bismuth nanolines self-assembled on Si(001). They appear as subatomic thin lines perpendicular to the bismuth nanoline at positive biases and as atomic size beads at negative biases. Density functional theory (DFT) simulations show that these features can be attributed to buckled Si dimers substituting for Bi dimers in the nanoline, where the sharp feature is the counterintuitive signature of these dimers flip** during scanning. The perfect correspondence between the STM data and the DFT simulation demonstrated in this study highlights the detailed understanding we have of the complex Bi-Si(001) Haiku system.
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Submitted 3 May, 2017;
originally announced May 2017.
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Intrinsic origin of electron scattering at 4H-SiC(0001)/SiO$_2$
Authors:
Shigeru Iwase,
Christopher James Kirkham,
Tomoya Ono
Abstract:
We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO$_2$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though there are no electrically active defects. The origin of the large scattering is explained by the behavior of the internal-space states (ISSs). Moreover, the effect…
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We introduce a first-principles study to clarify the carrier-scattering property at the SiC/SiO$_2$. Interestingly, the electron transport at the conduction-band edge is significantly affected by the introduction of oxygen, even though there are no electrically active defects. The origin of the large scattering is explained by the behavior of the internal-space states (ISSs). Moreover, the effect of the ISSs is larger than that of the electrically active carbon-related defects. This result indicates that an additional scattering not considered in a conventional Si/SiO$_2$ occurs at the SiC/SiO$_2$.
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Submitted 15 July, 2016;
originally announced July 2016.
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Structure of self-assembled Mn atom chains on Si(001)
Authors:
R. Villarreal,
M. Longobardi,
S. A. Köster,
Ch. J. Kirkham,
D. Bowler,
Ch. Renner
Abstract:
Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy and densi…
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Mn has been found to self-assemble into atomic chains running perpendicular to the surface dimer reconstruction on Si(001). They differ from other atomic chains by a striking asymmetric appearance in filled state scanning tunneling microscopy (STM) images. This has prompted complicated structural models involving up to three Mn atoms per chain unit. Combining STM, atomic force microscopy and density functional theory we find that a simple necklace-like chain of single Mn atoms reproduces all their prominent features, including their asymmetry not captured by current models. The upshot is a remarkably simpler structure for modelling the electronic and magnetic properties of Mn atom chains on Si(001).
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Submitted 28 October, 2015;
originally announced October 2015.
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Interplay between O defects and SiC stacking at the SiC/SiO$_2$ interface
Authors:
Christopher James Kirkham,
Tomoya Ono
Abstract:
We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two different surface types, depending on which of the two lattice sites, $h$ or $k$, is at the surface [K. Arima \textit{et al}., Appl. Phys. Lett. \textbf{90}, 202106 (…
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We investigate the effect of SiC stacking on the 4H-SiC/SiO$_2$ interface, both in the presence and absence of O defects, which appear during thermal oxidation, via first principles calculations. It is known that 4H-SiC(0001) has two different surface types, depending on which of the two lattice sites, $h$ or $k$, is at the surface [K. Arima \textit{et al}., Appl. Phys. Lett. \textbf{90}, 202106 (2007)]. We find interlayer states along the conduction band edge of SiC, whose location changes depending on the interface type, and thus too the effect of defects. When $h$ sites are directly at the interface, O defects remove interfacial conduction band edge states. On the other hand, when $k$ sites are at the interface, the conduction band edge is insensitive to the presence of O defects. These differences will impact on the operation of SiC devices because the most commonly used SiC based metal-oxide-semiconductor field-effect transistors rely on the electronic structure of the conduction band.
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Submitted 6 August, 2015;
originally announced August 2015.
