Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes
Authors:
S. M. Mazza,
G. Saito,
Y. Zhao,
T. Kirkes,
N. Yoho,
D. Yerdea,
N. Nagel,
J. Ott,
M. Nizam,
M. Leite,
M. Moralles,
H. F. -W. Sadrozinski,
A. Seiden,
B. Schumm,
F. McKinney-Martinez,
G. Giacomini,
W. Chen
Abstract:
The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations…
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The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations were read out using fast amplification boards and digitized with a fast oscilloscope. Standard PiN devices were characterized as well. The devices' energy resolution and time resolution as a function of X-ray energy were measured. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.
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Submitted 1 September, 2023; v1 submitted 27 June, 2023;
originally announced June 2023.
