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Probing Ferroelectric Phase Transitions in Barium Titanate Single Crystals via $\it{in-situ}$ Second Harmonic Generation Microscopy
Authors:
Benjamin Kirbus,
Samuel D. Seddon,
Iuliia Kiseleva,
Elke Beyreuther,
Michael Rüsing,
Lukas M. Eng
Abstract:
Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO$_3$; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay…
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Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO$_3$; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay of such FE domains, the domain walls (DWs), and their macroscopic properties, owed to BTO's multiple and experimentally accessible phase transitions. Here, we employ Second Harmonic Generation Microscopy (SHGM) to $\it{in-situ}$ investigate the cubic-to-tetragonal (at $\sim$126$^\circ$C) and the tetragonal-to-orthorhombic (at $\sim$5$^\circ$C) phase transition in single-crystalline BTO via 3-dimensional (3D) DW map**. We demonstrate that SHGM imaging provides the direct visualization of FE domain switching as well as the domain dynamics in 3D, shedding light on the interplay of the domain structure and the phase transition. These results allow us to extract the different transition temperatures locally, to unveil the hysteresis behavior, and to determine the type of phase transition at play (1st/2nd order) from the recorded SHGM data. The capabilities of SHGM in uncovering these crucial phenomena can easily be applied to other ferroelectrics to provide new possibilities for $\it{in-situ}$ engineering of advanced ferroic devices.
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Submitted 8 June, 2024;
originally announced June 2024.
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Hall mobilities and sheet carrier densities in a single LiNbO$_3$ conductive ferroelectric domain wall
Authors:
Henrik Beccard,
Elke Beyreuther,
Benjamin Kirbus,
Samuel D. Seddon,
Michael Rüsing,
Lukas M. Eng
Abstract:
For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the…
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For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the potential for variably designing room-temperature nanoelectronic circuits and devices based on such CDWs. In this context, the reliable determination of the fundamental transport parameters of LNO CDWs, in particular the 2D charge carrier density $n_{2D}$ and the Hall mobility $μ_{H}$ of the majority carriers, are of highest interest. In this contribution, we present and apply a robust and easy-to-prepare Hall-effect measurement setup by adapting the standard 4-probe van-der-Pauw method to contact a single, hexagonally-shaped domain wall that fully penetrates the 200-$μ$m-thick LNO bulk single crystal. We then determine $n_{2D}$ and $μ_{H}$ for a set of external magnetic fields $B$ and prove the expected cosine-like angular dependence of the Hall voltage. Lastly, we present photo-Hall measurements of one and the same DW, by determining the impact of super-bandgap illumination on the 2D charge carrier density $n_{2D}$.
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Submitted 6 November, 2023; v1 submitted 31 July, 2023;
originally announced August 2023.
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Impact of 3D curvature on the polarization orientation in non-Ising domain walls
Authors:
Ulises Acevedo-Salas,
Boris Croes,
Yide Zhang,
Olivier Cregut,
Kokou Dodzi Dorkenoo,
Benjamin Kirbus,
Ekta Singh,
Henrik Beccard,
Michael Rüsing,
Lukas M. Eng,
Riccardo Hertel,
Eugene A. Eliseev,
Anna N. Morozovska,
Salia Cherifi-Hertel
Abstract:
Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in L…
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Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in LiNbO3 is studied using second-harmonic generation microscopy and 3D polarimetry analysis. Correlations between the domain wall curvature and the variation of its internal polarization unfold in the form of modulations of the Néel-like character, which we attribute to the flexoelectric effect. While the Néel-like character originates mainly from the tilting of the domain wall, the internal polarization adjusts its orientation due to the synergetic upshot of dipolar and monopolar bound charges and their variation with the 3D curvature. Our results show that curved interfaces in solid crystals may offer a rich playground for tailoring nanoscale polar states.
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Submitted 4 July, 2022;
originally announced July 2022.
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Large Hall electron mobilities in head-to-head BaTiO$_3$-domain walls
Authors:
Henrik Beccard,
Benjamin Kirbus,
Elke Beyreuther,
Michael Rüsing,
Petr Bednyakov,
Jirka Hlinka,
Lukas M. Eng
Abstract:
Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4…
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Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4-point geometry at room temperature, finding the electron mobility to reach around 400~cm$^2$(Vs)$^{-1}$, while the 2-dimensional charge density amounts to ~7$\times$10$^3$cm$^{-2}$. We underline the necessity to take account of thermal and geometrical-misalignment offset voltages by evaluating the Hall resistance under magnetic-field sweeps, since otherwise dramatic errors of several hundred percent in the derived mobility and charge density values can occur. Apart from the specific characterization of the conducting BaTiO$_3$ DW, we propose the method as an easy and fast way to quantitatively characterize ferroic conducting DWs, complementary to previously proposed scanning-probe-based Hall-potential analyses.
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Submitted 24 April, 2022;
originally announced April 2022.
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Quantifying the Coherent Interaction Length of Second-Harmonic Microscopy in Lithium Niobate Confined Nanostructures
Authors:
Zeeshan Hussain Amber,
Benjamin Kirbus,
Lukas M. Eng,
Michael Rüsing
Abstract:
Thin-film lithium niobate (TFLN) in the form of x- or z-cut lithium-niobate-on-insulator (LNOI) has recently popped up as a very promising and novel platform for develo** integrated optoelectronic (nano)devices and exploring fundamental research. Here, we investigate the coherent interaction length $l_{c}$ of optical second-harmonic (SH) microscopy in such samples, that are purposely prepared in…
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Thin-film lithium niobate (TFLN) in the form of x- or z-cut lithium-niobate-on-insulator (LNOI) has recently popped up as a very promising and novel platform for develo** integrated optoelectronic (nano)devices and exploring fundamental research. Here, we investigate the coherent interaction length $l_{c}$ of optical second-harmonic (SH) microscopy in such samples, that are purposely prepared into a wedge shape, in order to elegantly tune the geometrical confinement from bulk thicknesses down to $\approx$ 50 nm. SH microscopy is a very powerful and non-invasive tool for the investigation of structural properties in the biological and solid-state sciences, especially also for visualizing and analyzing ferroelectric domains and domain walls. However, unlike bulk LN, SH microscopy in TFLN is largely affected by interfacial reflections and resonant enhancement that both rely on film thickness and substrate material. In this paper we show that the dominant SHG contribution measured in back-reflection, is the co-propagating phase-matched SH signal and \textit{not} the counter-propagating SH portion as is the case for bulk LN samples. Moreover, $l_{c}$ dramatically depends also on the incident pump laser wavelength (sample dispersion) but even more on the numerical aperture of the focussing objective in use. These experimental findings on x- and z-cut TFLN are excellently backed up by our advanced numerical simulations.
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Submitted 19 August, 2021; v1 submitted 7 August, 2021;
originally announced August 2021.
