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Altermagnetism imaged and controlled down to the nanoscale
Authors:
O. J. Amin,
A. Dal Din,
E. Golias,
Y. Niu,
A. Zakharov,
S. C. Fromage,
C. J. B. Fields,
S. L. Heywood,
R. B. Cousins,
J. Krempasky,
J. H. Dil,
D. Kriegner,
B. Kiraly,
R. P. Campion,
A. W. Rushforth,
K. W. Edmonds,
S. S. Dhesi,
L. Šmejkal,
T. Jungwirth,
P. Wadley
Abstract:
Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominen…
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Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominent phases ranging from superconductors to topological insulators, as well as on spintronic device scalability. Recently, altermagnetism has been proposed as a solution to this restriction, since it shares the enabling $\cal{T}$-symmetry breaking characteristic of ferromagnetism, combined with the antiferromagnetic-like vanishing net-magnetization. To date, altermagnetic ordering has been inferred from spatially averaged probes. Here, we demonstrate nanoscale imaging and control of altermagnetic ordering ranging from nanoscale vortices to domain walls to microscale single-domain states in MnTe. We combine the $\cal{T}$-symmetry breaking sensitivity of X-ray magnetic circular dichroism with magnetic linear dichroism and photoemission electron microscopy, to achieve detailed imaging of the local altermagnetic ordering vector. A rich variety of spin configurations can be imposed using microstructure patterning or thermal cycling in magnetic fields. The demonstrated detection and control of altermagnetism paves the way for future research ranging from ultra-scalable digital and neuromorphic spintronic devices, to the interplay of altermagnetism with non-dissipative superconducting or topological phases.
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Submitted 3 May, 2024;
originally announced May 2024.
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Activating the fluorescence of a Ni(II) complex by energy transfer
Authors:
Tzu-Chao Hung,
Yokari Godinez-Loyola,
Manuel Steinbrecher,
Brian Kiraly,
Alexander A. Khajetoorians,
Nikos L. Doltsinis,
Cristian A. Strassert,
Daniel Wegner
Abstract:
Luminescence of open-shell 3d metal complexes is often quenched due to ultrafast intersystem crossing (ISC) and cooling into a dark metal-centered excited state. We demonstrate successful activation of fluorescence from individual nickel phthalocyanine (NiPc) molecules in the junction of a scanning tunneling microscope (STM) by resonant energy transfer from other metal phthalocyanines at low tempe…
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Luminescence of open-shell 3d metal complexes is often quenched due to ultrafast intersystem crossing (ISC) and cooling into a dark metal-centered excited state. We demonstrate successful activation of fluorescence from individual nickel phthalocyanine (NiPc) molecules in the junction of a scanning tunneling microscope (STM) by resonant energy transfer from other metal phthalocyanines at low temperature. By combining STM, scanning tunneling spectroscopy, STM- induced luminescence, and photoluminescence experiments as well as time-dependent density functional theory, we provide evidence that there is an activation barrier for the ISC, which in most experimental conditions is overcome. We show that this is also the case in an electroluminescent tunnel junction where individual NiPc molecules adsorbed on an ultrathin NaCl decoupling film on a Ag(111) substrate are probed. However, when placing an MPc (M = Zn, Pd, Pt) molecule close to NiPc by means of STM atomic manipulation, resonant energy transfer can excite NiPc without overcoming the ISC activation barrier, leading to Q-band fluorescence. This work demonstrates that the thermally activated population of dark metal-centered states can be avoided by a designed local environment at low temperatures paired with a directed molecular excitation into vibrationally cold electronic states. Thus, we can envisage the use of luminophores based on more abundant transition metal complexes that do not rely on Pt or Ir.
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Submitted 11 March, 2024; v1 submitted 19 July, 2023;
originally announced July 2023.
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Bipolar single-molecule electroluminescence and electrofluorochromism
Authors:
Tzu-Chao Hung,
Roberto Robles,
Brian Kiraly,
Julian H. Strik,
Bram A. Rutten,
Alexander A. Khajetoorians,
Nicolas Lorente,
Daniel Wegner
Abstract:
Understanding the fundamental mechanisms of optoelectronic excitation and relaxation pathways on the single-molecule level has only recently been started by combining scanning tunneling microscopy (STM) and spectroscopy (STS) with STM-induced luminescence (STML). In this paper, we investigate cationic and anionic fluorescence of individual zinc phthalocyanine (ZnPc) molecules adsorbed on ultrathin…
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Understanding the fundamental mechanisms of optoelectronic excitation and relaxation pathways on the single-molecule level has only recently been started by combining scanning tunneling microscopy (STM) and spectroscopy (STS) with STM-induced luminescence (STML). In this paper, we investigate cationic and anionic fluorescence of individual zinc phthalocyanine (ZnPc) molecules adsorbed on ultrathin NaCl films on Ag(111) by using STML. They depend on the tip-sample bias polarity and appear at threshold voltages that are correlated with the onset energies of particular molecular orbitals, as identified by STS. We also find that the fluorescence is caused by a single electron tunneling process. Comparing with results from density functional theory calculations, we propose an alternative many-body picture to describe the charging and electroluminescence mechanism. Our study provides aspects toward well-defined voltage selectivity of bipolar electrofluorochromism, as well as fundamental insights regarding the role of transiently charged states of emitter molecules within OLED devices.
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Submitted 19 July, 2023; v1 submitted 20 October, 2022;
originally announced October 2022.
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Quantum simulator to emulate lower dimensional molecular structure
Authors:
E. Sierda,
X. Huang,
D. I. Badrtdinov,
B. Kiraly,
E. J. Knol,
G. C. Groenenboom,
M. I. Katsnelson,
M. Rösner,
D. Wegner,
A. A. Khajetoorians
Abstract:
Bottom-up quantum simulators have been developed to quantify the role of various interactions, dimensionality, and structure in creating electronic states of matter. Here, we demonstrated a solid-state quantum simulator emulating molecular orbitals, based solely on positioning individual cesium atoms on an indium antimonide surface. Using scanning tunneling microscopy and spectroscopy, combined wi…
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Bottom-up quantum simulators have been developed to quantify the role of various interactions, dimensionality, and structure in creating electronic states of matter. Here, we demonstrated a solid-state quantum simulator emulating molecular orbitals, based solely on positioning individual cesium atoms on an indium antimonide surface. Using scanning tunneling microscopy and spectroscopy, combined with ab initio calculations, we showed that artificial atoms could be made from localized states created from patterned cesium rings. These artificial atoms served as building blocks to realize artificial molecular structures with different orbital symmetries. These corresponding molecular orbitals allowed us to simulate 2D structures reminiscent of well known organic molecules. This platform could further be used to monitor the interplay between atomic structures and the resulting molecular orbital landscape with sub-molecular precision.
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Submitted 15 June, 2023; v1 submitted 13 October, 2022;
originally announced October 2022.
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Orbital memory from individual Fe atoms on black phosphorus
Authors:
Brian Kiraly,
Elze J. Knol,
Alexander N. Rudenko,
Mikhail I. Katsnelson,
Alexander A. Khajetoorians
Abstract:
Bistable valency in individual atoms presents a new approach toward single-atom memory, as well as a building block to create tunable and stochastic multi-well energy landscapes. Yet, this concept of orbital memory has thus far only been observed for cobalt atoms on the surface of black phosphorus, which are switched using tip-induced ionization. Here, we show that individual iron atoms on the sur…
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Bistable valency in individual atoms presents a new approach toward single-atom memory, as well as a building block to create tunable and stochastic multi-well energy landscapes. Yet, this concept of orbital memory has thus far only been observed for cobalt atoms on the surface of black phosphorus, which are switched using tip-induced ionization. Here, we show that individual iron atoms on the surface of black phosphorus exhibit orbital memory using a combination of scanning tunneling microscopy and spectroscopy with ab initio calculations based on density functional theory. Unlike cobalt, the iron orbital memory can be switched in its non-ionized ground state. Based on calculations, we confirm that each iron valency has a distinct magnetic moment that is characterized by a distinguishable charge distribution due to the different orbital population. By studying the stochastic switching of the valency with varying tunneling conditions, we propose that the switching mechanism is based on a two-electron tunneling process.
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Submitted 14 April, 2022;
originally announced April 2022.
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Gating orbital memory with an atomic donor
Authors:
Elze J. Knol,
Brian Kiraly,
Alexander N. Rudenko,
Werner M. J. van Weerdenburg,
Mikhail I. Katsnelson,
Alexander A. Khajetoorians
Abstract:
Orbital memory is defined by two stable valencies that can be electrically switched and read-out. To explore the influence of an electric field on orbital memory, we studied the distance-dependent influence of an atomic Cu donor on the state favorability of an individual Co atom on black phosphorus. Using low temperature scanning tunneling microscopy/spectroscopy, we characterized the electronic p…
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Orbital memory is defined by two stable valencies that can be electrically switched and read-out. To explore the influence of an electric field on orbital memory, we studied the distance-dependent influence of an atomic Cu donor on the state favorability of an individual Co atom on black phosphorus. Using low temperature scanning tunneling microscopy/spectroscopy, we characterized the electronic properties of individual Cu donors, corroborating this behavior with ab initio calculations based on density functional theory. We studied the influence of an individual donor on the charging energy and stochastic behavior of an individual Co atom. We found a strong impact on the state favorability in the stochastic limit. These findings provide quantitative information about the influence of local electric fields on atomic orbital memory.
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Submitted 8 March, 2022; v1 submitted 15 July, 2021;
originally announced July 2021.
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Plasmon-driven motion of an individual molecule
Authors:
Tzu-Chao Hung,
Brian Kiraly,
Julian H. Strik,
Alexander A. Khajetoorians,
Daniel Wegner
Abstract:
We demonstrate that nanocavity plasmons generated a few nanometers away from a molecule can induce molecular motion. For this, we study the well-known rapid shuttling motion of zinc phthalocyanine molecules adsorbed on ultrathin NaCl films by combining scanning tunneling microscopy (STM) and spectroscopy (STS) with STM-induced light emission. Comparing spatially resolved single-molecule luminescen…
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We demonstrate that nanocavity plasmons generated a few nanometers away from a molecule can induce molecular motion. For this, we study the well-known rapid shuttling motion of zinc phthalocyanine molecules adsorbed on ultrathin NaCl films by combining scanning tunneling microscopy (STM) and spectroscopy (STS) with STM-induced light emission. Comparing spatially resolved single-molecule luminescence spectra from molecules anchored to a step edge with isolated molecules adsorbed on the free surface, we found that the azimuthal modulation of the Lamb shift is diminished in case of the latter. This is evidence that the rapid shuttling motion is remotely induced by plasmon-exciton coupling. Plasmon-induced molecular motion may open an interesting playground to bridge the nanoscopic and mesoscopic worlds by combining molecular machines with nanoplasmonics to control directed motion of single molecules without the need for local probes.
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Submitted 25 November, 2020;
originally announced November 2020.
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Moiré induced electronic structure modifications in monolayer V$_{2}$S$_{3}$ on Au(111)
Authors:
Umut Kamber,
Sahar Pakdel,
Raluca-Maria Stan,
Anand Kamlapure,
Brian Kiraly,
Fabian Arnold,
Andreas Eich,
Arlette S. Ngankeu,
Marco Bianchi,
Jill A. Miwa,
Charlotte E. Sanders,
Nicola Lanatà,
Philip Hofmann,
Alexander A. Khajetoorians
Abstract:
There is immense interest in how the local environment influences the electronic structure of materials at the single layer limit. We characterize moiré induced spatial variations in the electronic structure of in-situ grown monolayer V2S3 on Au(111) by means of low temperature scanning tunneling microscopy and spectroscopy. We observe a long-range modulation of the integrated local density of sta…
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There is immense interest in how the local environment influences the electronic structure of materials at the single layer limit. We characterize moiré induced spatial variations in the electronic structure of in-situ grown monolayer V2S3 on Au(111) by means of low temperature scanning tunneling microscopy and spectroscopy. We observe a long-range modulation of the integrated local density of states (LDOS), and quantify this modulation with respect to the moiré superstructure for multiple orientations of the monolayer with respect to the substrate. Scanning tunneling spectroscopy reveals a prominent peak in the LDOS, which is shifted in energy at different points of the moiré superstructure. Comparing ab initio calculations with angle-resolved photoemission, we are able to attribute this peak to bands that exhibit a large out-of-plane d-orbital character. This suggests that the moiré driven variations in the measured density of states is driven by a periodic modulation of the monolayer-substrate hybridization.
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Submitted 5 January, 2021; v1 submitted 23 July, 2020;
originally announced July 2020.
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An atomic Boltzmann machine capable of on-chip learning
Authors:
Brian Kiraly,
Elze J. Knol,
Hilbert J. Kappen,
Alexander A. Khajetoorians
Abstract:
The Boltzmann Machine (BM) is a neural network composed of stochastically firing neurons that can learn complex probability distributions by adapting the synaptic interactions between the neurons. BMs represent a very generic class of stochastic neural networks that can be used for data clustering, generative modelling and deep learning. A key drawback of software-based stochastic neural networks…
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The Boltzmann Machine (BM) is a neural network composed of stochastically firing neurons that can learn complex probability distributions by adapting the synaptic interactions between the neurons. BMs represent a very generic class of stochastic neural networks that can be used for data clustering, generative modelling and deep learning. A key drawback of software-based stochastic neural networks is the required Monte Carlo sampling, which scales intractably with the number of neurons. Here, we realize a physical implementation of a BM directly in the stochastic spin dynamics of a gated ensemble of coupled cobalt atoms on the surface of semiconducting black phosphorus. Implementing the concept of orbital memory utilizing scanning tunnelling microscopy, we demonstrate the bottom-up construction of atomic ensembles whose stochastic current noise is defined by a reconfigurable multi-well energy landscape. Exploiting the anisotropic behaviour of black phosphorus, we build ensembles of atoms with two well-separated intrinsic time scales that represent neurons and synapses. By characterizing the conditional steady-state distribution of the neurons for given synaptic configurations, we illustrate that an ensemble can represent many distinct probability distributions. By probing the intrinsic synaptic dynamics, we reveal an autonomous reorganization of the synapses in response to external electrical stimuli. This self-adaptive architecture paves the way for on-chip learning directly in atomic-scale machine learning hardware.
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Submitted 15 September, 2021; v1 submitted 4 May, 2020;
originally announced May 2020.
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Anisotropic two-dimensional screening at the surface of black phosphorus
Authors:
Brian Kiraly,
Elze J. Knol,
Klara Volckaert,
Deepnarayan Biswas,
Alexander N. Rudenko,
Danil A. Prishchenko,
Vladimir G. Mazurenko,
Mikhail I. Katsnelson,
Philip Hofmann,
Daniel Wegner,
Alexander A. Khajetoorians
Abstract:
Screening in reduced dimensions has strong consequences on the electronic properties in van der Waals semiconductors, impacting the quasiparticle band gap and exciton binding energy. Screening in these materials is typically treated isotropically, yet black phosphorus exhibits in-plane electronic anisotropy seen in its effective mass, carrier mobility, excitonic wavefunctions, and plasmonic disper…
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Screening in reduced dimensions has strong consequences on the electronic properties in van der Waals semiconductors, impacting the quasiparticle band gap and exciton binding energy. Screening in these materials is typically treated isotropically, yet black phosphorus exhibits in-plane electronic anisotropy seen in its effective mass, carrier mobility, excitonic wavefunctions, and plasmonic dispersion. Here, we use the adsorption of individual potassium atoms on the surface of black phosphorus to vary the near-surface do** over a wide range, while simultaneously probing the dielectric screening via the ordering of the adsorbed atoms. Using scanning tunneling microscopy, we visualize the role of strongly anisotropic screening which leads to the formation of potassium chains with a well-defined orientation and spacing. We quantify the mean interaction potential utilizing statistical methods and find that the dimensionality and anisotropy of the screening is consistent with the presence of a band-bending induced confinement potential near the surface. We corroborate the observed behavior with coverage-dependent studies of the electronic structure with angle-resolved photoemission.
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Submitted 1 July, 2019; v1 submitted 6 June, 2019;
originally announced June 2019.
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An orbitally derived single-atom magnetic memory
Authors:
Brian Kiraly,
Alexander N. Rudenko,
Werner M. J. van Weerdenburg,
Daniel Wegner,
Mikhail I. Katsnelson,
Alexander A. Khajetoorians
Abstract:
A single magnetic atom on a surface epitomizes the scaling limit for magnetic information storage. Indeed, recent work has shown that individual atomic spins can exhibit magnetic remanence and be read out with spin-based methods, demonstrating the fundamental requirements for magnetic memory. However, atomic spin memory has been only realized on thin insulating surfaces to date, removing potential…
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A single magnetic atom on a surface epitomizes the scaling limit for magnetic information storage. Indeed, recent work has shown that individual atomic spins can exhibit magnetic remanence and be read out with spin-based methods, demonstrating the fundamental requirements for magnetic memory. However, atomic spin memory has been only realized on thin insulating surfaces to date, removing potential tunability via electronic gating or distance-dependent exchange-driven magnetic coupling. Here, we show a novel mechanism for single-atom magnetic information storage based on bistability in the orbital population, or so-called valency, of an individual Co atom on semiconducting black phosphorus (BP). Distance-dependent screening from the BP surface stabilizes the two distinct valencies and enables us to electronically manipulate the relative orbital population, total magnetic moment and spatial charge density of an individual magnetic atom without a spin-dependent readout mechanism. Furthermore, we show that the strongly anisotropic wavefunction can be used to locally tailor the switching dynamics between the two valencies. This orbital memory derives stability from the energetic barrier to atomic relaxation and demonstrates the potential for high-temperature single-atom information storage.
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Submitted 4 July, 2018;
originally announced July 2018.
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Activation cross-section data for alpha-particle induced nuclear reactions on natural ytterbium for some longer lived radioisotopes
Authors:
F. Tárkányi,
F. Ditrói,
S. Takács,
A. Hermanne,
B. Király
Abstract:
Additional experimental cross sections were deduced for the long half-life activation products (172Hf and 173Lu) from the alpha particle induced reactions on ytterbium up to 38 MeV from late, long measurements and for 175Yb, 167Tm from a re-evaluation of earlier measured spectra. The cross-sections are compared with the earlier experimental datasets and with the data based on the TALYS theoretical…
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Additional experimental cross sections were deduced for the long half-life activation products (172Hf and 173Lu) from the alpha particle induced reactions on ytterbium up to 38 MeV from late, long measurements and for 175Yb, 167Tm from a re-evaluation of earlier measured spectra. The cross-sections are compared with the earlier experimental datasets and with the data based on the TALYS theoretical nuclear reaction model (available in the TENDL-2014 and 2015 libraries) and the ALICE-IPPE code.
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Submitted 21 March, 2018;
originally announced March 2018.
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Probing Single Vacancies in Black Phosphorus at the Atomic Level
Authors:
Brian Kiraly,
Nadine Hauptmann,
Alexander N. Rudenko,
Mikhail I. Katsnelson,
Alexander A. Khajetoorians
Abstract:
Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and electronic structure calculations, we characterize the structural and electronic properties of single atomic vacancies within several monolayers of the surface of black phosphorus. We illustrate, with experimental analysis and tight-binding calculations, that we can depth profile these vacancies and…
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Utilizing a combination of low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) and electronic structure calculations, we characterize the structural and electronic properties of single atomic vacancies within several monolayers of the surface of black phosphorus. We illustrate, with experimental analysis and tight-binding calculations, that we can depth profile these vacancies and assign them to specific sublattices within the unit cell. Measurements reveal that the single vacancies exhibit strongly anisotropic and highly delocalized charge density, laterally extended up to 20 atomic unit cells. The vacancies are then studied with STS, which reveals in-gap resonance states near the valence band edge and a strong p-do** of the bulk black phosphorus crystal. Finally, quasiparticle interference generated near these vacancies enables the direct visualization of the anisotropic band structure of black phosphorus.
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Submitted 24 May, 2017; v1 submitted 22 February, 2017;
originally announced February 2017.