Showing 1–50 of 53 results for author: Kioussis, N

Unveiling the Electronic, Transport, and Migration Properties of the Te-Defect Lattice in DyTe$_{1.8}$

Authors: **woong Kim, Nicholas Kioussis

Abstract: The rare-earth ditellurides are known to form two-dimensional square lattice where the strong Fermi surface nesting leads to structural modulation. In contrast to charge density waves, the supercell modulation is accompanied by the formation of the periodic Te vacancy network, where the Te deficiency affects the nesting vector (i.e. the supercell size) via tuning the chemical potential. In this wo… ▽ More The rare-earth ditellurides are known to form two-dimensional square lattice where the strong Fermi surface nesting leads to structural modulation. In contrast to charge density waves, the supercell modulation is accompanied by the formation of the periodic Te vacancy network, where the Te deficiency affects the nesting vector (i.e. the supercell size) via tuning the chemical potential. In this work, first principles electronic structure calculations for the $\sqrt{5}\times\sqrt{5}$ supercell, that commonly appears in this family of tellurides, unveil interesting electronic, transport, and migration properties of the Te defect lattice in DyTe$_{1.8}$. The reconstruction of the Te-deficient square lattice, consisting of a single Te-dimer and a pair Te-trimers per unit cell, gives rise to an out-of-plane polarization, whose direction depends on the position of the dimer. This results in various close-in-energy parallel and antiparallel polarization configurations of successive Te layers depending on the dimer positions. We predict that the orientation of the Te dimers, and hence the corresponding structural motifs, can be reversibly switched between two in-plane perpendicular directions under tensile epitaxial strain via a piezoelectric substrate, resulting in a colossal conductivity switching. Furthermore, the Te-dimer orientations result in asymmetric Fermi surface which can be confirmed by quantum oscillations measurements. Finally, we present numerical results for the migration paths and energy landscape through various divacancy configurations in the presence or absence of epitaxial strain. △ Less

Submitted 8 July, 2024; originally announced July 2024.

Monoclinic LaSb$_2$ Superconducting Thin Films

Authors: Adrian Llanos, Giovanna Campisi, Veronica Show, **woong Kim, Reiley Dorrian, Salva Salmani-Rezaie, Nicholas Kioussis, Joseph Falson

Abstract: Rare-earth diantimondes exhibit coupling between structural and electronic orders which are tunable under pressure and temperature. Here we present the discovery of a new polymorph of LaSb$_2$ stabilized in thin films synthesized using molecular beam epitaxy. Using diffraction, electron microscopy, and first principles calculations we identify a YbSb$_2$-type monoclinic lattice as a yet-uncharacte… ▽ More Rare-earth diantimondes exhibit coupling between structural and electronic orders which are tunable under pressure and temperature. Here we present the discovery of a new polymorph of LaSb$_2$ stabilized in thin films synthesized using molecular beam epitaxy. Using diffraction, electron microscopy, and first principles calculations we identify a YbSb$_2$-type monoclinic lattice as a yet-uncharacterized stacking configuration. The material hosts superconductivity with a $T_\mathrm{c}$ = 2 K, which is enhanced relative to the bulk ambient phase, and a long superconducting coherence length of 140 nm. This result highlights the potential thin film growth has in stabilizing novel stacking configurations in quasi-two dimensional compounds with competing layered structures. △ Less

Submitted 14 February, 2024; originally announced February 2024.

All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

Authors: Jiacheng Shi, Victor Lopez-Dominguez, Sevdenur Arpaci, Vinod K. Sangwan, Farzad Mahfouzi, **woong Kim, Jordan G. Athas, Mohammad Hamdi, Can Aygen, Charudatta Phatak, Mario Carpentieri, Jidong S. Jiang, Matthew A. Grayson, Nicholas Kioussis, Giovanni Finocchio, Mark C. Hersam, Pedram Khalili Amiri

Abstract: Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR)… ▽ More Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures were not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here we show three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn3, sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes. △ Less

Submitted 23 November, 2023; originally announced November 2023.

Current manipulation of Giant tunneling altermagnetic resistance in collinear Antiferromagnetic RuO2/MgO/RuO2 sandwich structure

Authors: Shijie Xu, Yan Huang, Farzad Mahfouzi, Zhizhong Zhang, Houyi Cheng, Bingqian Dai, **woong Kim, Wenlong Cai, Kewen Shi, Daoqian Zhu, Zongxia Guo, Caihua Cao, Kun Zhang, Albert Fert, Yue Zhang, Kang L. Wang, Nicholas Kioussis, Weisheng Zhao

Abstract: As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers rep… ▽ More As an emerging non-volatile memory technology, magnetic random access memory (MRAM) has key features and advantages including non-volatility, high speed, endurance, low power consumption and radiation tolerance. Conventional MRAM utilizes magnetic tunnel junctions (MTJs), which consist of two ferromagnetic layers separated by an insulating tunnel barrier. The orientation of the magnetic layers represents the binary data (0 or 1), and electrical resistance changes depending on the relative orientation of these magnetic layers. Despite these advancements, the quest for a swifter, more stable magneto-resistive random-access memory paradigm persists. In this vein, we present a groundbreaking development: room-temperature antiferromagnetic tunnel junctions devoid of any net magnetic moment. Over 200% tunneling altermagnetic resistance (TAR) ratio was measured at RuO2 (110)/MgO/RuO2 (110)/W structure, which is achieved by changing the antiferromagnetic Neel vector of RuO2 with an ultralow current density 2 MA*cm-2. △ Less

Submitted 24 November, 2023; v1 submitted 16 November, 2023; originally announced November 2023.

Comments: Modification required

Spin-flop magnetoresistance in a collinear antiferromagnetic tunnel junction

Authors: Shijie Xu, Zhizhong Zhang, Farzad Mahfouzi, Yan Huang, Houyi Cheng, Bingqian Dai, Wenlong Cai, Kewen Shi, Daoqian Zhu, Zongxia Guo, Caihua Cao, Yongshan Liu, Albert Fert, Nicholas Kioussis, Kang L. Wang, Yue Zhang., Weisheng Zhao

Abstract: Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However, the manipulation and detection of antiferromagnetic order remain formidable challenges. Here, we report the electrical detection of colinear antiferromagnetism in… ▽ More Collinear antiferromagnetic (AFM) materials have unique promise of no stray fields, display ultrafast dynamics, and being robust against perturbation filed which motivates the extensive research of antiferromagnetic spintronics. However, the manipulation and detection of antiferromagnetic order remain formidable challenges. Here, we report the electrical detection of colinear antiferromagnetism in all-epitaxial RuO2/MgO/RuO2 three-terminal tunnel junctions (TJ) using spin-flop tunnel anisotropy magnetoresistance (TAMR). We measured a TAMR ratio of around 60% at room temperature, which arises between the parallel and perpendicular configurations of the adjacent collinear AFM state. Furthermore, we carried out angular dependent measurements using this AFM-TJ and showed that the magnitude of anisotropic longitudinal magnetoresistance in the AFM-TJ can be controlled by the direction of magnetic field. We also theoretically found that the colinear antiferromagnetic MTJ may produce a substantially large TAMR ratio as a result of the time-reversal, strong spin orbit coupling (SOC) characteristic of antiferromagnetic RuO2. Our work not only propels antiferromagnetic materials to the forefront of spintronic device innovation but also unveils a novel paradigm for electrically governed antiferromagnetic spintronics, auguring transformative advancements in high-speed, low-energy information devices. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Supercell formation in epitaxial rare-earth ditelluride thin films

Authors: Adrian Llanos, Salva Salmani-Rezaie, **woong Kim, Nicholas Kioussis, David A. Muller, Joseph Falson

Abstract: Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe$_{2-δ}$ on atomically flat MgO (001) using molecular beam epitaxy. The films are single phase and highly oriented as evidenced by transmission electron microscopy and X-ray diffraction measurements. Epitaxial strain is evident in films and is relieve… ▽ More Square net tellurides host an array of electronic ground states and commonly exhibit charge-density-wave ordering. Here we report the epitaxy of DyTe$_{2-δ}$ on atomically flat MgO (001) using molecular beam epitaxy. The films are single phase and highly oriented as evidenced by transmission electron microscopy and X-ray diffraction measurements. Epitaxial strain is evident in films and is relieved as the thickness increases up to a value of approximately 20 unit cells. Diffraction features associated with a supercell in the films are resolved which is coupled with Te-deficiency. First principles calculations attribute the formation of this defect lattice to nesting conditions in the Fermi surface, which produce a periodic occupancy of the conducting Te square-net, and opens a band gap at the chemical potential. This work establishes the groundwork for exploring the role of strain in tuning electronic and structural phases of epitaxial square-net tellurides and related compounds. △ Less

Submitted 27 August, 2023; originally announced August 2023.

Bismuth antiphase domain wall: A three-dimensional manifestation of the Su-Schrieffer-Heeger model

Authors: **woong Kim, Cheng-Yi Huang, Hsin Lin, David Vanderbilt, Nicholas Kioussis

Abstract: The Su, Schrieffer and Heeger (SSH) model, describing the soliton excitations in polyacetylene due to the formation of antiphase domain walls (DW) from the alternating bond pattern, has served as a paradigmatic example of one-dimensional (1D) chiral topological insulators. While the SSH model has been realized in photonic and plasmonic systems, there have been limited analogues in three-dimensiona… ▽ More The Su, Schrieffer and Heeger (SSH) model, describing the soliton excitations in polyacetylene due to the formation of antiphase domain walls (DW) from the alternating bond pattern, has served as a paradigmatic example of one-dimensional (1D) chiral topological insulators. While the SSH model has been realized in photonic and plasmonic systems, there have been limited analogues in three-dimensional (3D) electronic systems, especially regarding the formation of antiphase DWs. Here, we propose that pristine bulk Bi, in which the dimerization of $(111)$ atomic layers renders alternating covalent and van der Waals bonding within and between successive $(111)$ bilayers, respectively, serves as a 3D analogue of the SSH model. First, we confirm that the two dimerized Bi structures belong to different Zak phases of 0 and $π$ by considering the parity eigenvalues and Wannier charge centers, while the previously reported bulk topological phases of Bi remain invariant under the dimerization reversal. Next, we demonstrate the existence of topologically non-trivial $(111)$ and trivial $(11\bar{2})$ DWs in which the number of in-gap DW states (ignoring spin) is odd and even respectively, and show how this controls the interlinking of the Zak phases of the two adjacent domains. Finally, we derive general criteria specifying when a DW of arbitrary orientation exhibits a $π$ Zak phase based on the flip of parity eigenvalues. An experimental realization of dimerization in Bi and the formation of DWs may be achieved via intense femtosecond laser excitations that can alter the interatomic forces and bond lengths. △ Less

Submitted 10 January, 2023; originally announced January 2023.

Journal ref: Phys. Rev. B 107, 045135 (2023)

Elasto-Dynamical Induced Spin and Charge Pum** in Bulk Heavy Metals

Authors: Farzad Mahfouzi, Nicholas Kioussis

Abstract: Analogous to the Spin-Hall Effect (SHE), {\it ab initio} electronic structure calculations reveal that acoustic phonons can induce charge (spin) current flowing along (normal to) its propagation direction. Using Floquet approach we have calculated the elastodynamical-induced charge and spin pum** in bulk Pt and demonstrate that: (i) While the longitudinal charge pum** is an intrinsic observabl… ▽ More Analogous to the Spin-Hall Effect (SHE), {\it ab initio} electronic structure calculations reveal that acoustic phonons can induce charge (spin) current flowing along (normal to) its propagation direction. Using Floquet approach we have calculated the elastodynamical-induced charge and spin pum** in bulk Pt and demonstrate that: (i) While the longitudinal charge pum** is an intrinsic observable, the transverse pumped spin-current has an extrinsic origin that depends strongly on the electronic relaxation time; (ii) The longitudinal charge current is of nonrelativstic origin, while the transverse spin current is a relativistic effect that to lowest order scales linearly with the spin-orbit coupling strength; (iii) both charge and spin pumped currents have parabolic dependence on the amplitude of the elastic wave. △ Less

Submitted 22 January, 2022; originally announced January 2022.

Comments: 5 pages, 2 figures

First Principles Calculation of Dzyaloshinskii-Moriya Interaction: A Green's function Approach

Authors: Farzad Mahfouzi, Nicholas Kioussis

Abstract: We present a Greens function approach to calculate the Dzyaloshinskii-Moriya interactions (DMI) from first principles electronic structure calculations, that is computationally more efficient and accurate than the most-commonly employed supercell and generalized Bloch-based approaches. The method is applied to the (111) Co/Pt bilayer where the Co- and/or Pt-thickness dependence of the DMI coeffici… ▽ More We present a Greens function approach to calculate the Dzyaloshinskii-Moriya interactions (DMI) from first principles electronic structure calculations, that is computationally more efficient and accurate than the most-commonly employed supercell and generalized Bloch-based approaches. The method is applied to the (111) Co/Pt bilayer where the Co- and/or Pt-thickness dependence of the DMI coefficients are calculated. Overall, the calculated DMI are in relatively good agreement with the corresponding values reported experimentally. Furthermore, we investigate the effect of strain in the DMI tensor elements and show that the isotropic Néel DMI can be significantly modulated by the normal strains, $ε_{xx},ε_{yy}$ and is relatively insensitive to the shear strain, $ε_{xy}$. Moreover, we show that anisotropic strains, $(ε_{xx}-ε_{yy})$ and $ε_{xy}$, result in the emergence of anisotropic Néel- and Bloch-type DMIs, respectively. △ Less

Submitted 5 January, 2021; originally announced January 2021.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 103, 094410 (2021)

Spin transfer torque in Mn$_3$Ga-based ferrimagnetic tunnel junctions from first principles

Authors: Maria Stamenova, Plamen Stamenov, Farzad Mahfouzi, Quilong Sun, Nicholas Kioussis, Stefano Sanvito

Abstract: We report on first-principles calculations of spin-transfer torque (STT) in epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an analogous stack with a second Mn$_3$Ga electrode (instead of Fe) as polarizer. Solving the ballistic transport problem (NEGF + DFT) for the nonequilibrium spin density in a s… ▽ More We report on first-principles calculations of spin-transfer torque (STT) in epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an analogous stack with a second Mn$_3$Ga electrode (instead of Fe) as polarizer. Solving the ballistic transport problem (NEGF + DFT) for the nonequilibrium spin density in a scattering region extended to over 7.6 nm into the Mn$_3$Ga electrode, we find long-range spatial oscillations of the STT decaying on a length scale of a few tens of angstroms, both in the linear response regime and for finite bias. The oscillatory behavior of the STT in Mn$_3$Ga is robust against variations in the stack geometry and the applied bias voltage, which may affect the phase and the amplitude of the spatial oscillation, but the wave number is only responsive to variations in the longitudinal lattice constant of Mn$_3$Ga (for fixed in-plane geometry) without being commensurate with the lattice. Our interpretation of the long-range STT oscillations is based on the bulk electronic structure of Mn$_3$Ga, taking also into account the spin-filtering properties of the MgO barrier. Comparison to a fully Mn$_3$Ga-based stack shows similar STT oscillations, but a significant enhancement of both the TMR effect at the Fermi level and the STT at the interface, due to resonant tunneling for the mirror-symmetric junction with thinner barrier (three monoatomic layers). From the calculated energy dependence of the spin-polarized transmissions at 0 V, we anticipate asymmetric or symmetric TMR as a function of the applied bias voltage for the Fe-based and the all-Mn$_3$Ga stacks, respectively, which also both exhibit a sign change below 1 V. In the latter (symmetric) case we expect a TMR peak at zero, which is larger for the thinner barriers because of a spin-polarized resonant tunneling contribution. △ Less

Submitted 7 January, 2022; v1 submitted 29 September, 2020; originally announced September 2020.

Comments: 15 pages and 15 figures

Journal ref: Phys. Rev. B 103, 094403 (2021)

Magnetoelastic and Magnetostrictive Properties of Co$_2$XAl Heusler Compounds

Authors: Farzad Mahfouzi, Gregory P. Carman, Nicholas Kioussis

Abstract: We present a comprehensive first principles electronic structure study of the magnetoelastic and magnetostrictive properties in the Co-based Co$_2$XAl (X = V, Ti, Cr, Mn, Fe) full Heusler compounds. In addition to the commonly used total energy approach, we employ torque method to calculate the magnetoelastic tensor elements. We show that the torque based methods are in general computationally mor… ▽ More We present a comprehensive first principles electronic structure study of the magnetoelastic and magnetostrictive properties in the Co-based Co$_2$XAl (X = V, Ti, Cr, Mn, Fe) full Heusler compounds. In addition to the commonly used total energy approach, we employ torque method to calculate the magnetoelastic tensor elements. We show that the torque based methods are in general computationally more efficient, and allow to unveil the atomic- and orbital-contributions to the magnetoelastic constants in an exact manner, as opposed to the conventional approaches based on second order perturbation with respect to the spin-orbit coupling. The magnetostriction constants are in good agreement with available experimental data. The results reveal that the main contribution to the magnetostriction constants, $λ_{100}$ and $λ_{111}$, arises primarily from the strained-induced modulation of the $\langle d_{x^2-y^2}|\hat{L}_z|d_{xy}\rangle$ and $\langle d_{z^2}|\hat{L}_x|d_{yz}\rangle$ spin orbit coupling matrix elements, respectively, of the Co atoms. △ Less

Submitted 7 August, 2020; originally announced August 2020.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 102, 094401 (2020)

Noncollinear Magnetic Modulation of Weyl Nodes in Ferrimagnetic Mn$_3$Ga

Authors: Cheng-Yi Huang, Hugo Aramberri, Hsin Lin, Nicholas Kioussis

Abstract: The tetragonal ferrimagnetic Mn$_3$Ga exhibits a wide range of intriguing magnetic properties. Here, we report the emergence of topologically nontrivial nodal lines in the absence of spin orbit coupling (SOC) which are protected by both mirror and $C_{4z}$ rotational symmetries. In the presence of SOC we demonstrate that the doubly degenerate nontrivial crossing points evolve into $C_{4z}$-protect… ▽ More The tetragonal ferrimagnetic Mn$_3$Ga exhibits a wide range of intriguing magnetic properties. Here, we report the emergence of topologically nontrivial nodal lines in the absence of spin orbit coupling (SOC) which are protected by both mirror and $C_{4z}$ rotational symmetries. In the presence of SOC we demonstrate that the doubly degenerate nontrivial crossing points evolve into $C_{4z}$-protected Weyl nodes with chiral charge of $\pm$2. Furthermore, we have considered the experimentally reported noncollinear ferrimagnetic structure, where the magnetic moment of the Mn$_I$ atom (on the Mn-Ga plane) is tilted by an angle $θ$ with respect to the crystallographic $c$ axis. The evolution of the Weyl nodes with $θ$ reveals that the double Weyl nodes split into a pair of charge-1 Weyl nodes whose separation can be tuned by the magnetic orientation in the noncollinear ferrimagnetic structure. △ Less

Submitted 14 July, 2020; v1 submitted 18 May, 2020; originally announced May 2020.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 102, 094403 (2020)

Glide Symmetry Protected Higher-Order Topological Insulators from Semimetals with butterfly-like Nodal Lines

Authors: Xiaoting Zhou, Chuang-Han Hsu, Cheng-Yi Huang, Mikel Iraola, Juan L. Mañes, Maia G. Vergniory, Hsin Lin, Nicholas Kioussis

Abstract: Most topological insulators discovered today in spinful systems can be transformed from topological semimetals (TSMs) with vanishing bulk gap via introducing the spin-orbit coupling (SOC), which manifests the intrinsic links between the gapped TI phases and the gapless TSMs. Recently, we have proposed a new family of TSMs in time-reversal invariant {\it spinless} systems, which host butterfly-like… ▽ More Most topological insulators discovered today in spinful systems can be transformed from topological semimetals (TSMs) with vanishing bulk gap via introducing the spin-orbit coupling (SOC), which manifests the intrinsic links between the gapped TI phases and the gapless TSMs. Recently, we have proposed a new family of TSMs in time-reversal invariant {\it spinless} systems, which host butterfly-like nodal-lines (NLs) consisting of a pair of identical concentric intersecting coplanar ellipses (CICE). In this Communication, we unveil the intrinsic link between this exotic class of nodal-line semimetals (NLSMs) and a $\mathbb{Z}_{4}$ = 2 topological crystalline insulator (TCI), by including substantial SOC. We demonstrate that in three space groups ({\it i.e.} $Pbam$ (No.55), $P4/mbm$ (No.127) and $P4_2/mbc$ (No.135)), the TCI supports a fourfold Dirac fermion on the (001) surface protected by two glide symmetries, which originates from the intertwined drumhead surface states of the CICE NLs. The higher order topology is further demonstrated by the emergence of one-dimensional helical hinge states, indicating a new higher order topological insulator protected by a glide symmetry. △ Less

Submitted 22 May, 2022; v1 submitted 12 May, 2020; originally announced May 2020.

Comments: 6 pages, 3 figures

Journal ref: npj Computational Materials 7, 202 (2021)

Novel Family of Topological Semimetals with Butterfly-like Nodal Lines

Authors: Xiaoting Zhou, Chuang-Han Hsu, Hugo Aramberri, Mikel Iraola, Cheng-Yi Huang, Juan L. Mañes, Maia G. Vergniory, Hsin Lin, Nicholas Kioussis

Abstract: In recent years, the exotic properties of topological semimetals (TSMs) have attracted great attention and significant efforts have been made in seeking for new topological phases and material realization. In this work, we propose a new family of TSMs which harbors an unprecedented nodal line (NL) landscape consisting of a pair of concentric intersecting coplanar ellipses (CICE) at half-filling. M… ▽ More In recent years, the exotic properties of topological semimetals (TSMs) have attracted great attention and significant efforts have been made in seeking for new topological phases and material realization. In this work, we propose a new family of TSMs which harbors an unprecedented nodal line (NL) landscape consisting of a pair of concentric intersecting coplanar ellipses (CICE) at half-filling. Meanwhile, the CICE at half-filling guarantees the presence of a second pair of CICE beyond half-filling. Both CICEs are linked at four-fold degenerate points (FDPs) at zone boundaries. In addition, we identify the generic criteria for the existence of the CICE in a time reversal invariant {\it spinless} fermion system or a spinfull system with negligible spin-orbital coupling (SOC). Consequently, 9 out of 230 space groups (SGs) are feasible for hosting CICE whose location centers in the first Brillouin zone (BZ) are identified. We provide a simplest model with SG $Pbam$ (No. 55) which exhibits CICE, and the exotic intertwined drumhead surface states, induced by double-band-inversions. Finally, we propose a series of material candidates that host butterfly-like CICE NLs, such as, ZrX$_2$ (X=P,As), GeTe$_5$Tl$_2$, CYB$_2$ and Al$_2$Y$_3$. △ Less

Submitted 8 May, 2020; originally announced May 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. B 104, 125135 (2021)

Stabilized Interfacial Ferromagnetism and Enhanced Magnetoelectric Properties of Ultrathin FeRh Films Capped with Heavy Transition Metal Ta

Authors: Guohui Zheng, Nicholas Kioussis

Abstract: Thin FeRh film was extensively studied recently, and an emergent substrate- and cap**-dependent interfacial ferromagnetism (FM) was widely observed in experiments. However, the voltage modulation of this interfacial ferromagnetism is barely studied, which would have profound applications in antiferromagnetic (AFM) FeRh-based magnetoelectric-random access memory (MeRAM). Using ab initio technique… ▽ More Thin FeRh film was extensively studied recently, and an emergent substrate- and cap**-dependent interfacial ferromagnetism (FM) was widely observed in experiments. However, the voltage modulation of this interfacial ferromagnetism is barely studied, which would have profound applications in antiferromagnetic (AFM) FeRh-based magnetoelectric-random access memory (MeRAM). Using ab initio techniques, we comparatively study the interfacial ferromagnetic properties and magnetoelectric responses of ultrathin FeRh films capped by heavy transition metal Ta. We find that Ta cap** reverses the phase stability of ultrathin FeRh film below 1.5 nm and gigantically stabilizes the ferromagnetic phase and interfacial ferromagnetism. Besides, small magnetic moment of 2.2 $μ_B$ for neighboring Fe atoms, regardless of magnetic configurations and film thickness, is induced by Ta cap**. Compared with FeRh/MgO bilayers, magnetic anisotropies (in-plane for AFM, perpendicular for FM and interfacial-FM reconstructed trilayers) and magnetoelectric responses of these trilayers are enhanced. Furthermore, the VCMA behavior in FM phase is changed from $\vee$-shaped to linear. These findings demonstrate the manipulation of magnetic ordering of FeRh films with heavy metal cap** and electric field and can promote the application of FeRh alloy in magnetic memory and antiferromagnetic spintronics. △ Less

Submitted 13 February, 2020; originally announced February 2020.

Comments: 6 pages, 4 figures

Microscopic Origin of Spin-Orbit Torque in Ferromagnetic Heterostructures: A First Principles Approach

Authors: Farzad Mahfouzi, Rahul Mishra, Po-Hao Chang, Hyunsoo Yang, Nicholas Kioussis

Abstract: We present an {\it ab initio}-based theoretical framework which elucidates the origin of the spin-orbit torque (SOT) in Normal-Metal(NM)/Ferromagnet(FM) heterostructures. The SOT is decomposed into two contributions, namely, {\it spin-Hall} and the {\it spin-orbital} components. We find that {\it (i)} the Field-Like (FL) SOT is dominated by the spin-orbital component and {\it (ii)} both components… ▽ More We present an {\it ab initio}-based theoretical framework which elucidates the origin of the spin-orbit torque (SOT) in Normal-Metal(NM)/Ferromagnet(FM) heterostructures. The SOT is decomposed into two contributions, namely, {\it spin-Hall} and the {\it spin-orbital} components. We find that {\it (i)} the Field-Like (FL) SOT is dominated by the spin-orbital component and {\it (ii)} both components contribute to the dam**-like torque with comparable magnitude in the limit of thick Pt film. The contribution of the spin-orbital component to the DL-SOT is present only for NMs with strong SOC coupling strength. We demonstrate that the FL-SOT can be expressed in terms of the non-equilibrium spin-resolved orbital moment accumulation. The calculations reveal that the experimentally reported oxygen-induced sign-reversal of the FL-SOT in Pt/Co bilayers is due to the significant reduction of the majority-spin orbital moment accumulation on the interfacial NM atoms. △ Less

Submitted 5 February, 2020; originally announced February 2020.

Comments: 7 pages, 3 figures

Termination Dependent Topological Surface States in Nodal Loop Semimetal HfP2

Authors: Christopher Sims, M. Mofazzel Hosen, Hugo Aramberri, Cheng-Yi Huang, Gyanendra Dhakal, Klauss Dimitri, Firoza Kabir, Sabin Regmi, Xiaoting Zhou, Tay-Rong Chang, Hsin Lin, Dariusz Kaczorowski, Nicholas Kioussis, Madhab Neupane

Abstract: Symmetry plays a major role in all disciplines of physics. Within the field of topological materials there is a great interest in understanding how the mechanics of crystalline and internal symmetries protect crossings between the conduction and valence bands. Additionally, exploring this direction can lead to a deeper understanding on the topological properties of crystals hosting a variety of sy… ▽ More Symmetry plays a major role in all disciplines of physics. Within the field of topological materials there is a great interest in understanding how the mechanics of crystalline and internal symmetries protect crossings between the conduction and valence bands. Additionally, exploring this direction can lead to a deeper understanding on the topological properties of crystals hosting a variety of symmetries. For the first time, we report the experimental observation of topological surface states in the nodal loop semimetal HfP2 using angle resolved photoemission spectroscopy (ARPES) which is supported by our first principles calculations. Our study shows termination dependent surface states in this compound. Our experimental data reveal surface states linked to three unique nodal loops confirmed by theoretical calculation to be topologically non-trivial. This work demonstrates that transition metal dipnictides provide a good platform to study non-trivial topological states protected by nonsymmorphic symmetry. △ Less

Submitted 23 June, 2019; originally announced June 2019.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. Materials 4, 054201 (2020)

Dam** and Anti-Dam** Phenomena in Metallic Antiferromagnets: An ab-initio Study

Authors: Farzad Mahfouzi, Nicholas Kioussis

Abstract: We report on a first principles study of anti-ferromagnetic resonance (AFMR) phenomena in metallic systems [MnX (X=Ir,Pt,Pd,Rh) and FeRh] under an external electric field. We demonstrate that the AFMR linewidth can be separated into a relativistic component originating from the angular momentum transfer between the collinear AFM subsystem and the crystal through the spin orbit coupling (SOC), and… ▽ More We report on a first principles study of anti-ferromagnetic resonance (AFMR) phenomena in metallic systems [MnX (X=Ir,Pt,Pd,Rh) and FeRh] under an external electric field. We demonstrate that the AFMR linewidth can be separated into a relativistic component originating from the angular momentum transfer between the collinear AFM subsystem and the crystal through the spin orbit coupling (SOC), and an exchange component that originates from the spin exchange between the two sublattices. The calculations reveal that the latter component becomes significant in the low temperature regime. Furthermore, we present results for the current-induced intersublattice torque which can be separated into the Field-Like (FL) and Dam**-Like (DL) components, affecting the intersublattice exchange coupling and AFMR linewidth, respectively. △ Less

Submitted 14 December, 2018; v1 submitted 6 December, 2018; originally announced December 2018.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. B 98, 220410 (2018)

First Principles Study of Angular Dependence of Spin-Orbit Torque in Pt/Co and Pd/Co Bilayers

Authors: Farzad Mahfouzi, Nicholas Kioussis

Abstract: Spin-orbit torque (SOT) induced by spin Hall and interfacial effects in heavy metal(HM)/ferromagnetic(FM) bilayers has recently been employed to switch the magnetization direction using in-plane current injection. In this paper, using the Keldysh Green's function approach and first principles electronic structure calculations we determine the Field-Like (FL) and Dam**-Like (DL) components of the… ▽ More Spin-orbit torque (SOT) induced by spin Hall and interfacial effects in heavy metal(HM)/ferromagnetic(FM) bilayers has recently been employed to switch the magnetization direction using in-plane current injection. In this paper, using the Keldysh Green's function approach and first principles electronic structure calculations we determine the Field-Like (FL) and Dam**-Like (DL) components of the SOT for the HM/Co (HM = Pt, Pd) bilayers. Our approach yields the angular dependence of both the FL- and DL-SOT on the magnetization direction without assuming a priori their angular form. Decomposition of the SOT into the Fermi sea and Fermi surface contributions reveals that the SOT is dominated by the latter. Due to the large lattice mismatch between the Co and the HM we have also determined the effect of tensile biaxial strain on both the FL- and DL-SOT components. The calculated dependence of FL- and DL-SOT on the HM thickness is overall in good agreement with experiment. The dependence of the SOT with the position of the Fermi level suggests that the DL-SOT dominated by the Spin Hall effect of the bulk HM. △ Less

Submitted 21 May, 2018; v1 submitted 16 April, 2018; originally announced April 2018.

Comments: 6 Pages, 6 Figures

Journal ref: Phys. Rev. B 97, 224426 (2018)

Giant Enhancement of Intrinsic Spin Hall Conductivity in $β$ Tungsten via Substitutional Do**

Authors: Xuelei Sui, Chong Wang, **woong Kim, Jianfeng Wang, S. H. Rhim, Wenhui Duan, Nicholas Kioussis

Abstract: A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure calculations reveal that the intrinsic spin Hall conductivity (SHC) for pristine $β$-W is about sixty percent larger than that of $α$-W. More importantly, we demonstrate… ▽ More A key challenge in manipulating the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque is to identify materials that exhibit an efficient charge-to-spin current conversion. Ab initio electronic structure calculations reveal that the intrinsic spin Hall conductivity (SHC) for pristine $β$-W is about sixty percent larger than that of $α$-W. More importantly, we demonstrate that the SHC of $β$-W can be enhanced via Ta alloying. This is corroborated by spin Berry curvature calculations of W$_{1-x}$Ta$_x$ ($x$ $\sim$ 12.5%) alloys which show a giant enhancement of spin Hall angle of up to $\approx$ $-0.5$. The underlying mechanism is the synergistic behavior of the SHC and longitudinal conductivity with Fermi level position. These findings, not only pave the way for enhancing the intrinsic spin Hall effect in $β$-W, but also provide new guidelines to exploit substitutional alloying to tailor the spin Hall effect in various materials. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Intrinsic Dam** Phenomena from Quantum to Classical Magnets:An ab-initio Study of Gilbert Dam** in Pt/Co Bilayer

Authors: Farzad Mahfouzi, **woong Kim, Nicholas Kioussis

Abstract: A fully quantum mechanical description of the precessional dam** of Pt/Co bilayer is presented in the framework of the Keldysh Green function approach using {\it ab initio} electronic structure calculations. In contrast to previous calculations of classical Gilbert dam** ($α_{GD}$), we demonstrate that $α_{GD}$ in the quantum case does not diverge in the ballistic regime due to the finite size… ▽ More A fully quantum mechanical description of the precessional dam** of Pt/Co bilayer is presented in the framework of the Keldysh Green function approach using {\it ab initio} electronic structure calculations. In contrast to previous calculations of classical Gilbert dam** ($α_{GD}$), we demonstrate that $α_{GD}$ in the quantum case does not diverge in the ballistic regime due to the finite size of the total spin, $S$. In the limit of $S\rightarrow\infty$ we show that the formalism recovers the torque correlation expression for $α_{GD}$ which we decompose into spin-pum** and spin-orbital torque correlation contributions. The formalism is generalized to take into account a self consistently determined dephasing mechanism which preserves the conservation laws and allows the investigation of the effect of disorder. The dependence of $α_{GD}$ on Pt thickness and disorder strength is calculated and the spin diffusion length of Pt and spin mixing conductance of the bilayer are determined and compared with experiments. △ Less

Submitted 14 November, 2017; v1 submitted 14 September, 2017; originally announced September 2017.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 96, 214421 (2017)

Current Induced Dam** of Nanosized Quantum Moments in the Presence of Spin-Orbit Interaction

Authors: Farzad Mahfouzi, Nicholas Kioussis

Abstract: Motivated by the need to understand current-induced magnetization dynamics at the nanoscale, we have developed a formalism, within the framework of Keldysh Green function approach, to study the current-induced dynamics of a ferromagnetic (FM) nanoisland overlayer on a spin-orbit-coupling (SOC) Rashba plane. In contrast to the commonly employed classical micromagnetic LLG simulations the magnetic m… ▽ More Motivated by the need to understand current-induced magnetization dynamics at the nanoscale, we have developed a formalism, within the framework of Keldysh Green function approach, to study the current-induced dynamics of a ferromagnetic (FM) nanoisland overlayer on a spin-orbit-coupling (SOC) Rashba plane. In contrast to the commonly employed classical micromagnetic LLG simulations the magnetic moments of the FM are treated {\it quantum mechanically}. We obtain the density matrix of the whole system consisting of conduction electrons entangled with the local magnetic moments and calculate the effective dam** rate of the FM. We investigate two opposite limiting regimes of FM dynamics: (1) The precessional regime where the magnetic anisotropy energy (MAE) and precessional frequency are smaller than the exchange interactions, and (2) The local spin-flip regime where the MAE and precessional frequency are comparable to the exchange interactions. In the former case, we show that due to the finite size of the FM domain, the \textquotedblleft Gilbert dam**\textquotedblright does not diverge in the ballistic electron transport regime, in sharp contrast to Kambersky's breathing Fermi surface theory for dam** in metallic FMs. In the latter case, we show that above a critical bias the excited conduction electrons can switch the local spin moments resulting in demagnetization and reversal of the magnetization. Furthermore, our calculations show that the bias-induced antidam** efficiency in the local spin-flip regime is much higher than that in the rotational excitation regime. △ Less

Submitted 27 April, 2017; v1 submitted 27 February, 2017; originally announced February 2017.

Comments: 10 page, 9 figures

Journal ref: Phys. Rev. B 95, 184417 (2017)

Weyl node assisted conductivity switch in interfacial phase change memory with van der Waals interfaces

Authors: **woong Kim, Jeongwoo Kim, Young-Sun Song, Ruqian Wu, Seung-Hoon Jhi, Nicholas Kioussis

Abstract: The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological properties. Depending on the atomic-layer-stacking sequence of the GeTe block, the iPCM can be either in the SET (Ge-Te-Ge-Te) or RESET (Te-Ge-Ge-Te) states, where the former exhibits ferroelectric polarization and electrical con… ▽ More The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, promising candidates for the next generation non-volatile random-access memories, exhibits fascinating topological properties. Depending on the atomic-layer-stacking sequence of the GeTe block, the iPCM can be either in the SET (Ge-Te-Ge-Te) or RESET (Te-Ge-Ge-Te) states, where the former exhibits ferroelectric polarization and electrical conductivity two orders of magnitude larger than that of the RESET state. But, its origin remains elusive. Here, we predict the emergence of a Weyl semimetal phase in the SET state induced by the ferroelectric polarization which breaks the crystal inversion symmetry. We show that the giant conductivity enhancement of the SET phase is due to the appearance of gapless Weyl nodes. The Ge-Te- or Sb-Te-terminated surfaces of Weyl semimetal iPCM produce surface states with completely distinctive topology, where the former consists solely of Fermi arcs while the latter consists of both closed Fermi surface and open Fermi arcs. The iPCM with van der Waals interfaces offers an ideal platform for exploiting the exotic Weyl properties for future memory device applications. △ Less

Submitted 18 February, 2017; originally announced February 2017.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 96, 235304 (2017)

Revealing the Hidden Structural Phases of FeRh

Authors: **woong Kim, R. Ramesh, Nicholas Kioussis

Abstract: ${\it Ab}$ ${\it initio}$ electronic structure calculations reveal that tetragonal distortion has a dramatic effect on the relative stability of the various magnetic structures (C-, A-, G-, A$'$-AFM, and FM) of FeRh giving rise to a wide range of novel stable/metastable structures and magnetic phase transitions between these states. We predict that the ${\it cubic}… ▽ More ${\it Ab}$ ${\it initio}$ electronic structure calculations reveal that tetragonal distortion has a dramatic effect on the relative stability of the various magnetic structures (C-, A-, G-, A$'$-AFM, and FM) of FeRh giving rise to a wide range of novel stable/metastable structures and magnetic phase transitions between these states. We predict that the ${\it cubic}$ G-AFM structure, which was believed thus far to be the ground state, is metastable and that the ${\it tetragonally}$ expanded G-AFM is the stable structure. The low energy barrier separating these states suggests phase coexistence at room temperature. We propose a novel A$'$-AFM phase to be the ${\it global}$ ground state among all magnetic phases which arises from the strain-induced tuning of the exchange interactions. The results elucidate the underlying mechanism for the recent experimental findings of electric-field control of magnetic phase transition driven via tetragonal strain. The novel magnetic phase transitions open interesting prospects for exploiting strain engineering for the next-generation memory devices. △ Less

Submitted 3 November, 2016; originally announced November 2016.

Journal ref: Phys. Rev. B 94, 180407 (2016)

A pressure-induced topological phase with large Berry curvature in Pb$_{1-x}$Sn$_x$Te

Authors: Tian Liang, Satya Kushwaha, **woong Kim, Quinn Gibson, **g**g Lin, Nicholas Kioussis, R. J. Cava, N. P. Ong

Abstract: The picture of how a gap closes in a semiconductor has been radically transformed by topological concepts. Instead of the gap closing and immediately re-opening, topological arguments predict that, in the absence of inversion symmetry, a metallic phase protected by Weyl nodes persists over a finite interval of the tuning parameter (e.g. pressure $P$) . The gap re-appears when the Weyl nodes mutual… ▽ More The picture of how a gap closes in a semiconductor has been radically transformed by topological concepts. Instead of the gap closing and immediately re-opening, topological arguments predict that, in the absence of inversion symmetry, a metallic phase protected by Weyl nodes persists over a finite interval of the tuning parameter (e.g. pressure $P$) . The gap re-appears when the Weyl nodes mutually annihilate. We report evidence that Pb$_{1-x}$Sn$_x$Te exhibits this topological metallic phase. Using pressure to tune the gap, we have tracked the nucleation of a Fermi surface droplet that rapidly grows in volume with $P$. In the metallic state we observe a large Berry curvature which dominates the Hall effect. Moreover, a giant negative magnetoresistance is observed in the insulating side of phase boundaries, in accord with \emph{ab initio} calculations. The results confirm the existence of a topological metallic phase over a finite pressure interval. △ Less

Submitted 24 October, 2017; v1 submitted 24 October, 2016; originally announced October 2016.

Comments: 16 pages, 11 figures, 1 table

Journal ref: Sci. Adv. 3, e1602510 (2017)

Ferromagnetic Dam**/Anti-dam** in a Periodic 2D Helical surface; A Non-Equilibrium Keldysh Green Function Approach

Authors: Farzad Mahfouzi, Nicholas Kioussis

Abstract: In this paper, we investigate theoretically the spin-orbit torque as well as the Gilbert dam** for a two band model of a 2D helical surface state with a Ferromagnetic (FM) exchange coupling. We decompose the density matrix into the Fermi sea and Fermi surface components and obtain their contributions to the electronic transport as well as the spin-orbit torque (SOT). Furthermore, we obtain the e… ▽ More In this paper, we investigate theoretically the spin-orbit torque as well as the Gilbert dam** for a two band model of a 2D helical surface state with a Ferromagnetic (FM) exchange coupling. We decompose the density matrix into the Fermi sea and Fermi surface components and obtain their contributions to the electronic transport as well as the spin-orbit torque (SOT). Furthermore, we obtain the expression for the Gilbert dam** due to the surface state of a 3D Topological Insulator (TI) and predicted its dependence on the direction of the magnetization precession axis. △ Less

Submitted 12 August, 2016; v1 submitted 2 August, 2016; originally announced August 2016.

Comments: 6 pages, 0 figures

An invisible non-volatile solid-state memory

Authors: J. Clarkson, C. Frontera, Z. Q. Liu, Y. Lee, J. Kim, K. Cordero, S. Wizotsky, F. Sanchez, J. Sort, S. L. Hsu, C Ko, J. Wu, H. M. Christen, J. T. Heron, D. G. Schlom, S. Salahuddin, L. Aballe, M. Foerster, N. Kioussis, J. Fontcuberta, I. Fina, R. Ramesh, X. Marti

Abstract: Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable res… ▽ More Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected using routinely available probes or manipulated by external magnetic perturbations. Antiferromagnetic resistors feature unrivalled robustness but the stable resistive states reported scarcely differ by more than a fraction of a percent at room temperature. Here we show that the metamagnetic (ferromagnetic to antiferromagnetic) transition in intermetallic Fe0.50Rh0.50 can be electrically controlled in a magnetoelectric heterostructure to reveal or cloak a given ferromagnetic state. From an aligned ferromagnetic phase, magnetic states are frozen into the antiferromagnetic phase by the application of an electric field, thus eliminating the stray field and likewise making it insensitive to external magnetic field. Application of a reverse electric field reverts the antiferromagnetic state to the original ferromagnetic state. Our work demonstrates the building blocks of a feasible, extremely stable, non-volatile, electrically addressable, low-energy dissipation, magnetoelectric multiferroic memory. △ Less

Submitted 7 September, 2016; v1 submitted 12 April, 2016; originally announced April 2016.

Comments: 14 pages, 4 figures

GdN thin-film: Chern Insulating State on Square Lattice

Authors: Zhi Li, **woong Kim, Nicholas Kioussis, Shu-Yu Ning, Haibin Su, Toshiaki Iitaka, Takami Tohyama, Xinyu Yang, Jiu-Xing Zhang

Abstract: Using first-principles calculations, we predict a Chern insulating phase in thin films of the ferromagnetic semi-metal GdN. In contrast to previously proposed Chern insulator candidates, which mostly rely on honeycomb lattices, this system affords a great chance to realize the quantum anomalous Hall Effect on a square lattice without either a magnetic substrate or transition metal do**, making s… ▽ More Using first-principles calculations, we predict a Chern insulating phase in thin films of the ferromagnetic semi-metal GdN. In contrast to previously proposed Chern insulator candidates, which mostly rely on honeycomb lattices, this system affords a great chance to realize the quantum anomalous Hall Effect on a square lattice without either a magnetic substrate or transition metal do**, making synthesis easier. The band inversion between 5d-orbitals of Gd and 2p-orbitals of N is verified by first-principles calculation based on density functional theory, and the band gap can be as large as 100 meV within GdN trilayer. With further increase of film thickness, the band gap tends to close and the metallic bulk property becomes obvious. △ Less

Submitted 27 October, 2015; originally announced October 2015.

Comments: accepted by PRB RC

Antidam** spin-orbit torque driven by spin-flip reflection mechanism on the surface of a topological insulator: A time-dependent nonequilibrium Green function approach

Authors: Farzad Mahfouzi, Branislav K. Nikolić, Nicholas Kioussis

Abstract: Motivated by recent experiments observing spin-orbit torque (SOT) acting on the magnetization $\vec{m}$ of a ferromagnetic (F) overlayer on the surface of a three-dimensional topological insulator (TI), we investigate the origin of the SOT and the magnetization dynamics in such systems. We predict that lateral F/TI bilayers of finite length, sandwiched between two normal metal leads, will generate… ▽ More Motivated by recent experiments observing spin-orbit torque (SOT) acting on the magnetization $\vec{m}$ of a ferromagnetic (F) overlayer on the surface of a three-dimensional topological insulator (TI), we investigate the origin of the SOT and the magnetization dynamics in such systems. We predict that lateral F/TI bilayers of finite length, sandwiched between two normal metal leads, will generate a large antidam**-like SOT per very low charge current injected parallel to the interface. The large values of antidam**-like SOT are {\it spatially localized} around the transverse edges of the F overlayer. Our analysis is based on adiabatic expansion (to first order in $\partial \vec{m}/\partial t$) of time-dependent nonequilibrium Green functions (NEGFs), describing electrons pushed out of equilibrium both by the applied bias voltage and by the slow variation of a classical degree of freedom [such as $\vec{m}(t)$]. From it we extract formulas for spin torque and charge pum**, which show that they are reciprocal effects to each other, as well as Gilbert dam** in the presence of SO coupling. The NEGF-based formula for SOT naturally splits into four components, determined by their behavior (even or odd) under the time and bias voltage reversal. Their complex angular dependence is delineated and employed within Landau-Lifshitz-Gilbert simulations of magnetization dynamics in order to demonstrate capability of the predicted SOT to efficiently switch $\vec{m}$ of a perpendicularly magnetized F overlayer. △ Less

Submitted 23 January, 2016; v1 submitted 3 June, 2015; originally announced June 2015.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. B 93, 115419 (2016)

Two dimensional topological insulators with tunable band gaps: HgTe and HgSe monolayers

Authors: ** Li, Chaoyu He, Lijun Meng, Chao Tang, Xiaolin Wei, **woong Kim, Nicholas Kioussis, G. Malcolm Stocks, Jianxin Zhong

Abstract: Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer LB HgTe undergoes a transition to a topological nontrivial phase under the appropriate in-plane tensile strain (ε > 2.6%) due to the combination effects of strai… ▽ More Employing ab initio electronic calculations, we propose a new type of two-dimensional (2D) topological insulator (TI), monolayer (ML) low buckled (LB) mercury telluride (HgTe) and mercury selenide (HgSe), with tunable band gaps. Monolayer LB HgTe undergoes a transition to a topological nontrivial phase under the appropriate in-plane tensile strain (ε > 2.6%) due to the combination effects of strain and spin orbital coupling (SOC). Under the 2.6%< ε <4.2% tensile strain, the band inversion and topological nontrivial gap are induced by the SOC. For ε >4.2%, the band inversion is already realized by strain but the topological gap is induced by SOC. The band gap of monolayer LB HgTe TI phase can be tuned over a wide range from 0 eV to 0.20 eV as the tensile strain increases from 2.6% to 7.4%. Similarly, the topological phase transition of monolayer LB HgSe is induced by strain and SOC as the strain ε >3.1%. The topological band gap can be 0.05 eV as the strain increases to about 4.6%. The large band gap of 2D LB HgTe and HgSe monolayers make this type of material suitable for practical applications at room-temperature. △ Less

Submitted 16 October, 2015; v1 submitted 8 December, 2014; originally announced December 2014.

Journal ref: Scientific Reports 5, Article number: 14115 (2015)

Strain-induced topological insulator phase transition in HgSe

Authors: Lars Winterfeld, Luis A. Agapito, ** Li, Nicholas Kioussis, Peter Blaha, Yong P. Chen

Abstract: Using ab initio electronic structure calculations we investigate the change of the band structure and the nu_0 topological invariant in HgSe (non-centrosymmetric system) under two different type of uniaxial strain along the [001] and [110] directions, respectively. Both compressive [001] and [110] strain leads to the opening of a (crystal field) band gap (with a maximum value of about 37 meV) in t… ▽ More Using ab initio electronic structure calculations we investigate the change of the band structure and the nu_0 topological invariant in HgSe (non-centrosymmetric system) under two different type of uniaxial strain along the [001] and [110] directions, respectively. Both compressive [001] and [110] strain leads to the opening of a (crystal field) band gap (with a maximum value of about 37 meV) in the vicinity of Gamma, and the concomitant formation of a camel-back- (inverse camel-back-) shape valence (conduction) band along the direction perpendicular to the strain with a minimum (maximum) at Gamma. We find that the Z_2 invariant nu_0=1, which demonstrates conclusively that HgSe is a strong topological insulator (TI). With further increase of the strain the band gap decreases vanishing at a critical strain value (which depends on the strain type) where HgSe undergoes a transition from a strong TI to a trivial (normal) insulator. HgSe exhibits a similar behavior under a tensile [110] uniaxial strain. On the other hand, HgSe remains a normal insulator by applying a [001] tensile uniaxial strain. Complementary electronic structure calculations of the non-polar (110) surface under compressive [110] tensile strain show two Dirac cones at the Gamma point whose spin chiral states are associated with the top and bottom slab surfaces. △ Less

Submitted 17 February, 2013; originally announced February 2013.

Comments: 8 pages, 8 figures

Aviram-Ratner rectifying mechanism for DNA base pair sequencing through graphene nanogaps

Authors: Luis A. Agapito, Jacob Gayles, Christian Wolowiec, Nicholas Kioussis

Abstract: We demonstrate that biological molecules such as Watson-Crick DNA base pairs can behave as biological Aviram-Ratner electrical rectifiers because of the spatial separation and weak hydrogen bonding between the nucleobases. We have performed a parallel computational implementation of the ab-initio non-equilibrium Green's function (NEGF) theory to determine the electrical response of graphene---base… ▽ More We demonstrate that biological molecules such as Watson-Crick DNA base pairs can behave as biological Aviram-Ratner electrical rectifiers because of the spatial separation and weak hydrogen bonding between the nucleobases. We have performed a parallel computational implementation of the ab-initio non-equilibrium Green's function (NEGF) theory to determine the electrical response of graphene---base-pair---graphene junctions. The results show an asymmetric (rectifying) current-voltage response for the Cytosine-Guanine base pair adsorbed on a graphene nanogap. In sharp contrast we find a symmetric response for the Thymine-Adenine case. We propose applying the asymmetry of the current-voltage response as a sensing criterion to the technological challenge of rapid DNA sequencing via graphene nanogaps. △ Less

Submitted 17 February, 2012; v1 submitted 30 December, 2011; originally announced January 2012.

Journal ref: Nanotechnology, Vol 23, Page 135202, Year 2012

Approaching the Intrinsic Bandgap in Suspended High-Mobility Graphene Nanoribbons

Authors: Ming-Wei Lin, Cheng Ling, Luis A. Agapito, Nicholas Kioussis, Yiyang Zhang, Mark Ming-Cheng Cheng, Wei L. Wang, Efthimios Kaxiras, Zhixian Zhou

Abstract: We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally derived bandgap is in quantitative agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width taking into account… ▽ More We report electrical transport measurements on a suspended ultra-low-disorder graphene nanoribbon(GNR) with nearly atomically smooth edges that reveal a high mobility exceeding 3000 cm2 V-1 s-1 and an intrinsic band gap. The experimentally derived bandgap is in quantitative agreement with the results of our electronic-structure calculations on chiral GNRs with comparable width taking into account the electron-electron interactions, indicating that the origin of the bandgap in non-armchair GNRs is partially due to the magnetic zigzag edges. △ Less

Submitted 27 May, 2011; originally announced May 2011.

Comments: 22 pages, 6 figures

Room-Temperature High On/Off Ratio in Suspended Graphene Nanoribbon Field Effect Transistors

Authors: Ming-Wei Lin, Cheng Ling, Yiyang Zhang, Hyeun Joong Yoon, Mark Ming-Cheng Cheng, Luis A. Agapito, Nicholas Kioussis, Noppi Widjaja, Zhixian Zhou

Abstract: We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic ambipolar transfer characteristic of graphene. Further increasing the annealing current creates a na… ▽ More We have fabricated suspended few layer (1-3 layers) graphene nanoribbon field effect transistors from unzipped multiwall carbon nanotubes. Electrical transport measurements show that current-annealing effectively removes the impurities on the suspended graphene nanoribbons, uncovering the intrinsic ambipolar transfer characteristic of graphene. Further increasing the annealing current creates a narrow constriction in the ribbon, leading to the formation of a large band-gap and subsequent high on/off ratio (which can exceed 104). Such fabricated devices are thermally and mechanically stable: repeated thermal cycling has little effect on their electrical properties. This work shows for the first time that ambipolar field effect characteristics and high on/off ratios at room temperature can be achieved in relatively wide graphene nanoribbon (15 nm ~50 nm) by controlled current annealing. △ Less

Submitted 8 April, 2011; originally announced April 2011.

Comments: 19 pages, 6 figures, accepted for publication in Nanotechnology (2011)

Voltage Dependence of Spin Transfer Torque in Magnetic Tunnel Junctions

Authors: M. Chshiev, I. Theodonis, A. Kalitsov, N. Kioussis, W. H. Butler

Abstract: Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque as a function of applied voltage can vary over a wide range depending on the band parameters of the ferromagnetic electrodes and the insulator that comprise… ▽ More Theoretical investigations of spin transfer torque in magnetic tunnel junctions using the tight-binding model in the framework of non-equilibrium Green functions formalism are presented. We show that the behavior of the spin transfer torque as a function of applied voltage can vary over a wide range depending on the band parameters of the ferromagnetic electrodes and the insulator that comprise the magnetic tunnel junction. The behavior of both the parallel and perpendicular components of the spin torque is addressed. This behavior is explained in terms of the spin and charge current dependence and on the interplay between evanescent states in the insulator and the Fermi surfaces of ferromagnetic electrodes comprising the junction. The origin of the perpendicular (field-like) component of spin transfer torque at zero bias, i.e. exchange coupling through the barrier between ferromagnetic electrodes is discussed. △ Less

Submitted 2 June, 2008; originally announced June 2008.

Comments: 5 pages,4 figures

Journal ref: IEEE Trans. Magn., 44 (2008) 2543

Enhancing the spin-transfer torque through proximity of quantum well states

Authors: Ioannis Theodonis, Alan Kalitsov, Nicholas Kioussis

Abstract: We predict that the spin-transfer, $T_{i,||}$, and field-like, $T_{i,\bot}$, components of the {\it local} spin torque are dramatically enhanced in double-barrier magnetic tunnel junctions. The {\it spin-mixing} enhancement is due to the energetic proximity of majority and minority quantum well states (QWS) of different quantum numbers within the bias window. $T_{i,||}$ exhibits a switch-on and… ▽ More We predict that the spin-transfer, $T_{i,||}$, and field-like, $T_{i,\bot}$, components of the {\it local} spin torque are dramatically enhanced in double-barrier magnetic tunnel junctions. The {\it spin-mixing} enhancement is due to the energetic proximity of majority and minority quantum well states (QWS) of different quantum numbers within the bias window. $T_{i,||}$ exhibits a switch-on and switch-off step-like bias behavior when spin polarized QWS enter the bias window or exit the energy band, while $T_{i,\bot}$, changes sign between switch-on biases. The {\it net} $T_{\bot}$ exhibits an anomalous angular behavior due to the bias interplay of the bilinear and biquadratic effective exchange couplings. △ Less

Submitted 30 October, 2007; v1 submitted 29 March, 2007; originally announced March 2007.

Comments: 7 pages, 9 figures

Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions

Authors: Ioannis Theodonis, Nicholas Kioussis, Alan Kalitsov, Mairbek Chshiev, William Butler

Abstract: We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without} a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents… ▽ More We predict an anomalous bias dependence of the spin transfer torque parallel to interface, $T_{||}$, in magnetic tunnel junctions (MTJ), which can be selectively tuned by the exchange splitting. It may exhibit a sign reversal {\it without} a corresponding sign reversal of the bias or even a quadratic bias dependence. We demonstrate that the underlying mechanism is the interplay of spin currents for the ferromagnetic (antiferromagnetic) configurations, which vary linearly (quadratically) with bias, respectively, due to the symmetric (asymmetric) nature of the barrier. The spin transfer torque perpendicular to interface exhibits a quadratic bias dependence. △ Less

Submitted 5 December, 2006; v1 submitted 5 June, 2006; originally announced June 2006.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. Lett. 97, 237205 (2006)

Evolution of magnetism of Cr nanoclusters on a Au(111) surface

Authors: H. J. Gotsis, Nicholas Kioussis, D. A. Papaconstantopoulos

Abstract: We have carried out collinear and non-collinear electronic structure calculations to investigate the structural, electronic and magnetic properties of isolated Cr atoms, dimers and compact trimers. We find that the Cr monomer prefers to adsrob on the fcc hollow site with a binding energy of 3.13 eV and a magnetic moment of of 3.93 $μ_B$. The calculated Kondo temperature of 0.7 K for the monomer… ▽ More We have carried out collinear and non-collinear electronic structure calculations to investigate the structural, electronic and magnetic properties of isolated Cr atoms, dimers and compact trimers. We find that the Cr monomer prefers to adsrob on the fcc hollow site with a binding energy of 3.13 eV and a magnetic moment of of 3.93 $μ_B$. The calculated Kondo temperature of 0.7 K for the monomer is consistent with the lack of a Kondo peak in scanning tunneling microscopy (STM) experiments at 7 K. The compact Cr dimer orders antiferromagnetically and its bond length contracts to 1.72 $Å$ close to the value for the free-standing Cr dimer. The very low magnetic moment of 0.005 $μ_B$ for the Cr atoms in the dimer is due to the strong $d-d$ hybridization between the Cr adatoms. Thus, these calculations reveal that the absence of the Kondo effect observed in STM experiments is due to the small local moments rather than the Kondo quenching of the local moments suggested experimentally. The Cr compact trimer exhibits non-collinear co-planar magnetism with vanishing net magnetic moment in agreement with experiment. △ Less

Submitted 14 September, 2005; originally announced September 2005.

Spin-Polarized Current Induced Torque in Magnetic Tunnel Junctions

Authors: A. Kalitsov, I. Theodonis, N. Kioussis, M. Chshiev, W. H. Butler, A. Vedyayev

Abstract: We present tight-binding calculations of the spin torque in non-collinear magnetic tunnel junctions based on the non-equilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach and the divergence of the spin current. We show that both methods are equivalent, i.e. the absorption of the spin current at the interface is equivalent to the… ▽ More We present tight-binding calculations of the spin torque in non-collinear magnetic tunnel junctions based on the non-equilibrium Green functions approach. We have calculated the spin torque via the effective local magnetic moment approach and the divergence of the spin current. We show that both methods are equivalent, i.e. the absorption of the spin current at the interface is equivalent to the exchange interaction between the electron spins and the local magnetization. The transverse components of the spin torque parallel and perpendicular to the interface oscillate with different phase and decay in the ferromagnetic layer (FM) as a function of the distance from the interface. The period of oscillations is inversely proportional to the difference between the Fermi-momentum of the majority and minority electrons. The phase difference between the two transverse components of the spin torque is due to the precession of the electron spins around the exchange field in the FM layer. In absence of applied bias and for a relatively thin barrier the perpendicular component of the spin torque to the interface is non-zero due to the exchange coupling between the FM layers across the barrier. △ Less

Submitted 30 August, 2005; originally announced August 2005.

Comments: 6 pages, 3 figures

Journal ref: J. Appl. Phys. 99, 08G501 (2006)

Tuning the magnetism of ordered and disordered strongly-correlated electron nanoclusters

Authors: N. Kioussis, Y. Luo, C. Verdozzi

Abstract: Recently, there has been a resurgence of intense experimental and theoretical interest on the Kondo physics of nanoscopic and mesoscopic systems due to the possibility of making experiments in extremely small samples. We have carried out exact diagonalization calculations to study the effect of energy spacing $Δ$ in the conduction band states, hybridization, number of electrons, and disorder on… ▽ More Recently, there has been a resurgence of intense experimental and theoretical interest on the Kondo physics of nanoscopic and mesoscopic systems due to the possibility of making experiments in extremely small samples. We have carried out exact diagonalization calculations to study the effect of energy spacing $Δ$ in the conduction band states, hybridization, number of electrons, and disorder on the ground-state and thermal properties of strongly-correlated electron nanoclusters. For the ordered systems, the calculations reveal for the first time that $Δ$ tunes the interplay between the {\it local} Kondo and {\it non local} RKKY interactions, giving rise to a "Doniach phase diagram" for the nanocluster with regions of prevailing Kondo or RKKY correlations. The interplay of $Δ$ and disorder gives rise to a $Δ$ versus concentration T=0 phase diagram very rich in structure. The parity of the total number of electrons alters the competition between the Kondo and RKKY correlations. The local Kondo temperatures, $T_K$, and RKKY interactions depend strongly on the local environment and are overall {\it enhanced} by disorder, in contrast to the hypothesis of ``Kondo disorder'' single-impurity models. This interplay may be relevant to experimental realizations of small rings or quantum dots with tunable magnetic properties. △ Less

Submitted 9 June, 2004; originally announced June 2004.

Comments: 10 pages, 13 figures, to appear in Physics of Spin in Solids: Materials, Methods, and Applications, (2004)

Tunable "Doniach Phase Diagram" for strongly-correlated nanoclusters

Authors: Y. Luo, C. Verdozzi, N. Kioussis

Abstract: Exact diagonalization calculations reveal that the energy spacing $Δ$ in the conduction band tunes the interplay between the {\it local} Kondo and {\it non local} RKKY interactions, giving rise to a "Doniach phase diagram" for a nanocluster with regions of prevailing Kondo or RKKY correlations. The parity of the total number of electrons alters the competition between the Kondo and RKKY correlat… ▽ More Exact diagonalization calculations reveal that the energy spacing $Δ$ in the conduction band tunes the interplay between the {\it local} Kondo and {\it non local} RKKY interactions, giving rise to a "Doniach phase diagram" for a nanocluster with regions of prevailing Kondo or RKKY correlations. The parity of the total number of electrons alters the competition between the Kondo and RKKY correlations. This interplay may be relevant to experimental realizations of small rings or quantum dots with tunable magnetic properties. Below a critical value V$_c$ of the hybridization the susceptibility exhibits a low-T exponential activation behavior determined by the interplay of the spin gap and $Δ$. △ Less

Submitted 28 April, 2004; originally announced April 2004.

Comments: 4 pages, 5 figures

Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling

Authors: A. Kalitsov, A. Coho, N. Kioussis, A. Vedyayev, M. Chshiev, A. Granovsky

Abstract: We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization and the local current can be dramatically enhanced or su… ▽ More We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWS) which depends on the impurity potential, impurity position and the symmetry of the QWS. △ Less

Submitted 11 February, 2004; originally announced February 2004.

Comments: 4 pages, 4 figures, submitted to Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 93, 046603 (2004)

Zero-temperature Phase Diagram For Strongly-Correlated Nanochains

Authors: Y. Luo, C. Verdozzi, N. Kioussis

Abstract: Recently there has been a resurgence of intense experimental and theoretical interest on the Kondo physics of nanoscopic and mesoscopic systems due to the possibility of making experiments in extremely small samples. We have carried out exact diagonalization calculations to study the effect of the energy spacing $Δ$ of the conduction band on the ground-state properties of a dense Anderson model… ▽ More Recently there has been a resurgence of intense experimental and theoretical interest on the Kondo physics of nanoscopic and mesoscopic systems due to the possibility of making experiments in extremely small samples. We have carried out exact diagonalization calculations to study the effect of the energy spacing $Δ$ of the conduction band on the ground-state properties of a dense Anderson model nanochain. The calculations reveal for the first time that the energy spacing tunes the interplay between the Kondo and RKKY interactions, giving rise to a zero-temperature $Δ$ versus hybridization phase diagram with regions of prevailing Kondo or RKKY correlations, separated by a {\it free spins} regime. This interplay may be relevant to experimental realizations of small rings or quantum dots with tunable magnetic properties. △ Less

Submitted 11 February, 2004; originally announced February 2004.

Comments: 8 pages, 3 figures. J. Appl. Phys. (in press)

Disordered Kondo Nanoclusters: Effect of Energy Spacing

Authors: C. Verdozzi, Y. Luo, Nicholas Kioussis

Abstract: Exact diagonalization results for Kondo nanoclusters alloyed with mixed valence impurities show that tuning the {\it energy spacing}, $Δ$, drives the system from the Kondo to the RKKY regime. The interplay of $Δ$ and disorder gives rise to a $Δ$ versus concentration T=0 phase diagram very rich in structure, where regions with prevailing Kondo or RKKY correlations alternate with domains of ferrom… ▽ More Exact diagonalization results for Kondo nanoclusters alloyed with mixed valence impurities show that tuning the {\it energy spacing}, $Δ$, drives the system from the Kondo to the RKKY regime. The interplay of $Δ$ and disorder gives rise to a $Δ$ versus concentration T=0 phase diagram very rich in structure, where regions with prevailing Kondo or RKKY correlations alternate with domains of ferromagnetic order. The local Kondo temperatures, $T_K$, and RKKY interactions depend strongly on the local environment and are overall {\it enhanced} by disorder, in contrast to the hypothesis of ``Kondo disorder'' single-impurity models. △ Less

Submitted 19 July, 2003; originally announced July 2003.

Comments: 4pages 4 figuresDisordered Kondo Nanoclusters: Effect of Energy Spacing

Hydrogen-induced Unzip** of Single-Walled Carbon Nanotubes

Authors: Henry Scudder, Gang Lu, Nicholas Kioussis

Abstract: The chemisorption of atomic hydrogen on the single-walled armchair carbon nanotube is studied with ab initio calculations. A single H atom is found to be chemisorbed on both the inside and outside wall of the nanotube. The binding energy of H adsorption at the exterior of the nanotube is much greater than that at the interior of the nanotube. For the first time, we predict that two rows of H ato… ▽ More The chemisorption of atomic hydrogen on the single-walled armchair carbon nanotube is studied with ab initio calculations. A single H atom is found to be chemisorbed on both the inside and outside wall of the nanotube. The binding energy of H adsorption at the exterior of the nanotube is much greater than that at the interior of the nanotube. For the first time, we predict that two rows of H atoms chemisorbed on selective sites exterior to the nanotube can break the nearest-neighbor C-C bond of the nanotube through the concerted formation of C-H bonds, leading to the unzip** of the nanotube wall. We provide insights into the underlying electronic structure responsible for the H-induced unzip** of the nanotube, lending strong support to the recent experimental observations for the coalescence of single-walled nanotubes in the presence of atomic hydrogen. Interestingly, H atoms chemisorbed inside the nanotube do not lead to the breaking of the C-C bonds. △ Less

Submitted 31 August, 2002; v1 submitted 27 August, 2002; originally announced August 2002.

Comments: Correction of a few typos

A nonplanar Peierls-Nabarro model and its applications to dislocation cross-slip

Authors: Gang Lu, Vasily V. Bulatov, Nicholas Kioussis

Abstract: A novel semidiscrete Peierls-Nabarro model is introduced which can be used to study dislocation spreading at more than one slip planes, such as dislocation cross-slip and junctions. The strength of the model, when combined with ab initio calculations for the energetics, is that it produces essentiallyan atomistic simulation for dislocation core properties without suffering from the uncertainties… ▽ More A novel semidiscrete Peierls-Nabarro model is introduced which can be used to study dislocation spreading at more than one slip planes, such as dislocation cross-slip and junctions. The strength of the model, when combined with ab initio calculations for the energetics, is that it produces essentiallyan atomistic simulation for dislocation core properties without suffering from the uncertainties associated with empirical potentials. Therefore, this method is particularly useful in providing insight into alloy design when empirical potentials are not available or not reliable for such multi-element systems. As an example, we study dislocation cross-slip and constriction process in two contrasting fcc metals, Al and Ag. We find that the screw dislocation in Al can cross-slip spontaneously in contrast with that in Ag, where the screw dislocation splits into two partials, which cannot cross-slip without first being constricted. The response of the dislocation to an external stress is examined in detail. The dislocation constriction energy and the critical stress for cross-slip are determined, and from the latter, we estimate the cross-slip energy barrier for straight screw dislocations. △ Less

Submitted 22 August, 2002; originally announced August 2002.

Comments: Submitted for the Proceedings of Multiscale Modelling of Materials (London, 2002)

Dislocation constriction and cross-slip in Al and Ag: an ab initio study

Authors: Gang Lu, Vasily V. Bulatov, Nicholas Kioussis

Abstract: A novel model based on the Peierls framework of dislocations is developed. The new theory can deal with a dislocation spreading at more than one slip planes. As an example, we study dislocation cross-slip and constriction process of two fcc metals, Al and Ag. The energetic parameters entering the model are determined from ab initio calculations. We find that the screw dislocation in Al can cross… ▽ More A novel model based on the Peierls framework of dislocations is developed. The new theory can deal with a dislocation spreading at more than one slip planes. As an example, we study dislocation cross-slip and constriction process of two fcc metals, Al and Ag. The energetic parameters entering the model are determined from ab initio calculations. We find that the screw dislocation in Al can cross-slip spontaneously in contrast with that in Ag, which splits into partials and cannot cross-slip without first being constricted. The dislocation response to an external stress is examined in detail. We determine dislocation constriction energy and critical stress for cross-slip, and from the latter, we estimate the cross-slip energy barrier for the straight screw dislocations. △ Less

Submitted 26 February, 2002; originally announced February 2002.

Hydrogen-enhanced local plasticity in aluminum: an ab initio study

Authors: Gang Lu, Qing Zhang, Nicholas Kioussis, Efthimios Kaxiras

Abstract: Dislocation core properties of Al with and without H impurities are studied using the Peierls-Nabarro model with parameters determined by ab initio calculations. We find that H not only facilitates dislocation emission from the crack tip but also enhances dislocation mobility dramatically, leading to macroscopically softening and thinning of the material ahead of the crack tip. We observe strong… ▽ More Dislocation core properties of Al with and without H impurities are studied using the Peierls-Nabarro model with parameters determined by ab initio calculations. We find that H not only facilitates dislocation emission from the crack tip but also enhances dislocation mobility dramatically, leading to macroscopically softening and thinning of the material ahead of the crack tip. We observe strong binding between H and dislocation cores, with the binding energy depending on dislocation character. This dependence can directly affect the mechanical properties of Al by inhibiting dislocation cross-slip and develo** slip planarity. △ Less

Submitted 16 April, 2001; originally announced April 2001.

Comments: 4 pages, 3 figures

Interaction of vacancies with grain boundary in aluminum: a first-principles study

Authors: Gang Lu, Nicholas Kioussis

Abstract: We present a theoretical study of the interaction of vacancies with a tilt grain boundary in aluminum based on the density functional theory. The grain boundary volume expansion and vacancy induced contraction are calculated and compared for the nearest-neighbor atoms from the defects, and the former is found to be smaller than the latter. The formation energy of a vacancy placed at various laye… ▽ More We present a theoretical study of the interaction of vacancies with a tilt grain boundary in aluminum based on the density functional theory. The grain boundary volume expansion and vacancy induced contraction are calculated and compared for the nearest-neighbor atoms from the defects, and the former is found to be smaller than the latter. The formation energy of a vacancy placed at various layers in the grain boundary has been calculated and we find that the grain boundary does not always act as sinks for vacancies. In fact, it costs more energy to form a vacancy at the boundary plane than in the bulk, although the rest of the grain boundary region does attract vacancies. The microscopic mechanisms of grain boundary sliding and migration are investigated thoroughly with and without a vacancy. We find that although the vacancy can hinder the grain boundary motion by tripling the energy barrier of sliding and migration, it can not inhibit or even delay the migration process. The vacancy placed at the first layer from the interface is found to be trapped at the layer and not able to follow the migrating interface. △ Less

Submitted 25 January, 2001; originally announced January 2001.

Comments: 12 pages, 8 figures

Strongly Correlated Cerium Systems: Non-Kondo Mechanism for Moment Collapse

Authors: Eric M. Collins, Nicholas Kioussis, Say Peng Lim, Bernard R. Cooper

Abstract: We present an ab initio based method which gives clear insight into the interplay between the hybridization, the coulomb exchange, and the crystal-field interactions, as the degree of 4f localization is varied across a series of strongly correlated cerium systems. The results for the ordered magnetic moments, magnetic structure, and ordering temperatures are in excellent agreement with experimen… ▽ More We present an ab initio based method which gives clear insight into the interplay between the hybridization, the coulomb exchange, and the crystal-field interactions, as the degree of 4f localization is varied across a series of strongly correlated cerium systems. The results for the ordered magnetic moments, magnetic structure, and ordering temperatures are in excellent agreement with experiment, including the occurence of a moment collapse of non-Kondo origin. In contrast, standard ab initio density functional calculations fail to predict, even qualitatively, the trend of the unusual magentic properties. △ Less

Submitted 7 February, 2000; originally announced February 2000.

Comments: A shorter version of this has been submitted to PRL