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Anderson photon-phonon co-localization in certain random superlattices
Authors:
Guillermo Arregui,
Norberto Daniel Lanzillotti Kimura,
Clivia Marfa Sotomayor Torres,
Pedro David García
Abstract:
Fundamental concepts in quantum physics and technological applications ranging from the detection of gravitational waves to the generation of stimulated Brillouin scattering rely on the interaction between the optical and the mechanical degrees of freedom.\ A key parameter to engineer this interaction is the spatial overlap between the two fields, optimized in carefully designed resonators on a ca…
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Fundamental concepts in quantum physics and technological applications ranging from the detection of gravitational waves to the generation of stimulated Brillouin scattering rely on the interaction between the optical and the mechanical degrees of freedom.\ A key parameter to engineer this interaction is the spatial overlap between the two fields, optimized in carefully designed resonators on a case-by-case basis.\ Disorder is an alternative strategy to confine light and sound at the nanoscale.\ However, it lacks an \textit{a priori} mechanism guaranteeing a high degree of co-localization due to the inherently complex nature of the underlying interference process.\ Here, we propose a way to address this challenge by using GaAs/AlAs vertical distributed Bragg reflectors with embedded geometrical disorder.\ Due to a remarkable coincidence in the physical parameters governing light and motion propagation in these two materials, the equations for both longitudinal acoustic waves in the growth direction and normal-incidence light become practically equivalent for excitations of the same wavelength.\ This guarantees spatial overlap between photons and phonons leading to a statistically significant enhancement in the vacuum optomechanical coupling rate, $g_{0}$, and making this system a promising candidate to explore Anderson localization of high frequency ($\sim$ 20 GHz) phonons enabled by cavity optomechanics.\
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Submitted 1 June, 2018;
originally announced June 2018.
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Near optimal single photon sources in the solid state
Authors:
N. Somaschi,
V. Giesz,
L. De Santis,
J. C. Loredo,
M. P. Almeida,
G. Hornecker,
S. L. Portalupi,
T. Grange,
C. Anton,
J. Demory,
C. Gomez,
I. Sagnes,
N. D. Lanzillotti Kimura,
A. Lemaitre,
A. Auffeves,
A. G. White,
L. Lanco,
P. Senellart
Abstract:
Single-photons are key elements of many future quantum technologies, be it for the realisation of large-scale quantum communication networks for quantum simulation of chemical and physical processes or for connecting quantum memories in a quantum computer. Scaling quantum technologies will thus require efficient, on-demand, sources of highly indistinguishable single-photons. Semiconductor quantum…
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Single-photons are key elements of many future quantum technologies, be it for the realisation of large-scale quantum communication networks for quantum simulation of chemical and physical processes or for connecting quantum memories in a quantum computer. Scaling quantum technologies will thus require efficient, on-demand, sources of highly indistinguishable single-photons. Semiconductor quantum dots inserted in photonic structures are ultrabright single photon sources, but the photon indistinguishability is limited by charge noise induced by nearby surfaces. The current state of the art for indistinguishability are parametric down conversion single-photon sources, but they intrinsically generate multiphoton events and hence must be operated at very low brightness to maintain high single photon purity. To date, no technology has proven to be capable of providing a source that simultaneously generates near-unity indistinguishability and pure single photons with high brightness. Here, we report on such devices made of quantum dots in electrically controlled cavity structures. We demonstrate on-demand, bright and ultra-pure single photon generation. Application of an electrical bias on deterministically fabricated devices is shown to fully cancel charge noise effects. Under resonant excitation, an indistinguishability of $0.9956\pm0.0045$ is evidenced with a $g^{2}(0)=0.0028\pm0.0012$. The photon extraction of $65%$ and measured brightness of $0.154\pm0.015$ make this source $20$ times brighter than any source of equal quality. This new generation of sources open the way to a new level of complexity and scalability in optical quantum manipulation.
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Submitted 26 October, 2015; v1 submitted 22 October, 2015;
originally announced October 2015.
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Sub-Terahertz Monochromatic Transduction with Semiconductor Acoustic Nanodevices
Authors:
Agnes Huynh,
Bernard Perrin,
N. D. Lanzillotti Kimura,
Bernard Jusserand,
A. Fainstein,
Aristide Lemaitre
Abstract:
We demonstrate semiconductor superlattices or nanocavities as narrow band acoustic transducers in the sub-terahertz range. Using picosecond ultrasonics experiments in the transmission geometry with pump and probe incident on opposite sides of the thick substrate, phonon generation and detection processes are fully decoupled. Generating with the semiconductor device and probing on the metal, we s…
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We demonstrate semiconductor superlattices or nanocavities as narrow band acoustic transducers in the sub-terahertz range. Using picosecond ultrasonics experiments in the transmission geometry with pump and probe incident on opposite sides of the thick substrate, phonon generation and detection processes are fully decoupled. Generating with the semiconductor device and probing on the metal, we show that both superlattices and nanocavities generate spectrally narrow wavepackets of coherent phonons with frequencies in the vicinity of the zone center and time durations in the nanosecond range, qualitatively different from picosecond broadband pulses usually involved in picosecond acoustics with metal generators. Generating in the metal and probing on the nanoacoustic device, we furthermore evidence that both nanostructured semiconductor devices may be used as very sensitive and spectrally selective detectors.
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Submitted 14 March, 2008;
originally announced March 2008.
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Phonon Bloch oscillations in acoustic-cavity structures
Authors:
N. D. Lanzillotti Kimura,
A. Fainstein,
B. Jusserand
Abstract:
We describe a semiconductor multilayer structure based in acoustic phonon cavities and achievable with MBE technology, designed to display acoustic phonon Bloch oscillations. We show that forward and backscattering Raman spectra give a direct measure of the created phononic Wannier-Stark ladder. We also discuss the use of femtosecond laser impulsions for the generation and direct probe of the in…
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We describe a semiconductor multilayer structure based in acoustic phonon cavities and achievable with MBE technology, designed to display acoustic phonon Bloch oscillations. We show that forward and backscattering Raman spectra give a direct measure of the created phononic Wannier-Stark ladder. We also discuss the use of femtosecond laser impulsions for the generation and direct probe of the induced phonon Bloch oscillations. We propose a gedanken experiment based in an integrated phonon source-structure-detector device, and we present calculations of pump and probe time dependent optical reflectivity that evidence temporal beatings in agreement with the Wannier-Stark ladder energy splitting.
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Submitted 19 July, 2004;
originally announced July 2004.
