Coherent THz Spin Dynamics in Antiferromagnets Beyond the Approximation of the Néel vector
Authors:
F. Formisano,
T. T. Gareev,
D. I. Khusyainov,
A. E. Fedianin,
R. M. Dubrovin,
P. P. Syrnikov,
D. Afanasiev,
R. V. Pisarev,
A. M. Kalashnikova,
J. H. Mentink,
A. V. Kimel
Abstract:
Controlled generation of coherent spin waves with highest possible frequencies and the shortest possible wavelengths is a cornerstone of spintronics and magnonics. Here, using the Heisenberg antiferromagnet RbMF$_3$, we demonstrate that laser-induced THz spin dynamics corresponding to pairs of mutually coherent counter propagating spin waves with the wavevectors up to the edge of the Brillouin zon…
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Controlled generation of coherent spin waves with highest possible frequencies and the shortest possible wavelengths is a cornerstone of spintronics and magnonics. Here, using the Heisenberg antiferromagnet RbMF$_3$, we demonstrate that laser-induced THz spin dynamics corresponding to pairs of mutually coherent counter propagating spin waves with the wavevectors up to the edge of the Brillouin zone cannot be understood in terms of magnetization and antiferromagnetic (Néel) vectors, conventionally used to describe spin waves. Instead, we propose to model such spin dynamics using the spin correlation function. We derive a quantum-mechanical equation of motion for the latter and emphasize that, unlike the magnetization and antiferromagnetic vectors the spin correlations in antiferromagnets do not exhibit inertia.
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Submitted 28 December, 2023; v1 submitted 13 March, 2023;
originally announced March 2023.
Strain-induced InGaAs/InAlAs superlattices for terahertz radiation
Authors:
D. S. Ponomarev,
A. E. Yachmenev,
S. S. Pushkarev,
R. A. Khabibullin,
M. M. Grekhov,
A. Gorodetsky,
K. I. Zaytsev,
D. I. Khusyainov,
A. M. Buryakov,
E. D. Mishina
Abstract:
We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to obtain an ultrashort photocarrier relaxation time of $τ\sim$ 1.5 ps without Be-do** of the InGaAs photoconductor. We assume two dominant mechanisms to be respo…
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We study the influence of residual strain in InGaAs/InAlAs superlattice (SL) on the ultrafast photocarrier dynamics under femtosecond laser excitation. We propose and fabricate a novel-designed strained InGaAs/InAlAs SL which allows us to obtain an ultrashort photocarrier relaxation time of $τ\sim$ 1.5 ps without Be-do** of the InGaAs photoconductor. We assume two dominant mechanisms to be responsible for a sharp reduction of $τ$: photocarriers trap** by defect levels in InAlAs barriers and increased photocarriers scattering at InGaAs/InAlAs interface roughness due to residual strain in the SL. The THz time-domain spectroscopic measurements reveal an increase in both emitted THz waveform and spectrum amplitudes with an increase of residual strain in SL. The results might be of considerable interest for accommodating the needs of THz pulsed spectroscopy and imaging in fundamental and applied branches of THz science and technology.
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Submitted 9 August, 2018;
originally announced August 2018.
