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Observation of flat and weakly dispersing bands in a van der Waals semiconductor Nb3Br8 with breathing kagome lattice
Authors:
Sabin Regmi,
Anup Pradhan Sakhya,
Tharindu Fernando,
Yuzhou Zhao,
Dylan Jeff,
Milo Sprague,
Favian Gonzalez,
Iftakhar Bin Elius,
Mazharul Islam Mondal,
Nathan Valadez,
Damani Jarrett,
Alexis Agosto,
Jihui Yang,
Jiun-Haw Chu,
Saiful I. Khondaker,
Xiaodong Xu,
Ting Cao,
Madhab Neupane
Abstract:
Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are…
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Niobium halides, Nb3X8 (X = Cl,Br,I), which are predicted two-dimensional magnets, have recently gotten attention due to their breathing kagome geometry. Here, we have studied the electronic structure of Nb3Br8 by using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. ARPES results depict the presence of multiple flat and weakly dispersing bands. These bands are well explained by the theoretical calculations, which show they have Nb d character indicating their origination from the Nb atoms forming the breathing kagome plane. This van der Waals material can be easily thinned down via mechanical exfoliation to the ultrathin limit and such ultrathin samples are stable as depicted from the time-dependent Raman spectroscopy measurements at room temperature. These results demonstrate that Nb3Br8 is an excellent material not only for studying breathing kagome induced flat band physics and its connection with magnetism, but also for heterostructure fabrication for application purposes.
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Submitted 9 September, 2023;
originally announced September 2023.
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Raman Study of Layered Breathing Kagome Lattice Semiconductor Nb3Cl8
Authors:
Dylan A. Jeff,
Favian Gonzalez,
Kamal Harrison,
Yuzhou Zhao,
Tharindu Fernando,
Sabin Regmi,
Zhaoyu Liu,
Humberto R. Gutierrez,
Madhab Neupane,
Jihui Yang,
Jiun-Haw Chu,
Xiaodong Xu,
Ting Cao,
Saiful I. Khondaker
Abstract:
Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is…
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Niobium chloride (Nb3Cl8) is a layered 2D semiconducting material with many exotic properties including a breathing kagome lattice, a topological flat band in its band structure, and a crystal structure that undergoes a structural and magnetic phase transition at temperatures below 90 K. Despite being a remarkable material with fascinating new physics, the understanding of its phonon properties is at its infancy. In this study, we investigate the phonon dynamics of Nb3Cl8 in bulk and few layer flakes using polarized Raman spectroscopy and density functional theory (DFT) analysis to determine the material's vibrational modes, as well as their symmetrical representations and atomic displacements. We experimentally resolved 12 phonon modes, 5 of which are A1g modes while the remaining 7 are Eg modes, which is in strong agreement with our DFT calculation. Layer-dependent results suggest that the Raman peak positions are mostly insensitive to changes in layer thickness, while peak intensity and FWHM are affected. Raman measurements as a function of excitation wavelength (473-785 nm) show a significant increase of the peak intensities when using a 473 nm excitation source, suggesting a near resonant condition. Temperature-dependent Raman experiments carried out above and below the transition temperature did not show any change in the symmetries of the phonon modes, suggesting that the structural phase transition is likely from the high temperature P3m1 phase to the low-temperature R3m phase. Magneto-Raman measurements carried out at 140 and 2 K between -2 to 2 T show that the Raman modes are not magnetically coupled. Overall, our study presented here significantly advances the fundamental understanding of layered Nb3Cl8 material which can be further exploited for future applications.
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Submitted 25 October, 2023; v1 submitted 20 June, 2023;
originally announced June 2023.
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Observation of momentum-dependent charge density wave gap in a layered antiferromagnet GdTe3
Authors:
Sabin Regmi,
Iftakhar Bin Elius,
Anup Pradhan Sakhya,
Dylan Jeff,
Milo Sprague,
Mazharul Islam Mondal,
Damani Jarrett,
Nathan Valadez,
Alexis Agosto,
Tetiana Romanova,
Jiun-Haw Chu,
Saiful I. Khondaker,
Andrzej Ptok,
Dariusz Kaczorowski,
Madhab Neupane
Abstract:
Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the inter…
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Charge density wave (CDW) ordering has been an important topic of study for a long time owing to its connection with other exotic phases such as superconductivity and magnetism. The RTe3 (R = rare-earth elements) family of materials provides a fertile ground to study the dynamics of CDW in van der Waals layered materials, and the presence of magnetism in these materials allows to explore the interplay among CDW and long range magnetic ordering. Here, we have carried out a high-resolution angle-resolved photoemission spectroscopy (ARPES) study of a CDW material GdTe3, which is antiferromagnetic below 12 K, along with thermodynamic, electrical transport, magnetic, and Raman measurements. Our Raman spectroscopy measurements show the presence of CDW amplitude mode at room temperature, which remains prominent when the sample is thinned down to 4-layers by exfoliation. Our ARPES data show a two-fold symmetric Fermi surface with both gapped and ungapped regions indicative of the partial nesting. The gap is momentum dependent, maximum along G-Z and gradually decreases going towards G - M. Our study provides a platform to study the dynamics of CDW and its interaction with other physical orders in two- and three-dimensions.
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Submitted 1 November, 2023; v1 submitted 7 June, 2023;
originally announced June 2023.
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Uniform vapor pressure based CVD growth of MoS2 using MoO3 thin film as a precursor for co-evaporation
Authors:
Sajeevi S. Withanage,
Hirokjyoti Kalita,
Hee-Suk Chung,
Tania Roy,
Yeonwoong Jung,
Saiful I. Khondaker
Abstract:
Chemical vapor deposition (CVD) is a powerful method employed for high quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for CVD based growth of monolayer molybdenum disulfide (MoS2) by using thermally evaporated thin films of molybdenum trioxide (MoO3) as the molybdenum (Mo) source…
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Chemical vapor deposition (CVD) is a powerful method employed for high quality monolayer crystal growth of 2D transition metal dichalcogenides with much effort invested toward improving the growth process. Here, we report a novel method for CVD based growth of monolayer molybdenum disulfide (MoS2) by using thermally evaporated thin films of molybdenum trioxide (MoO3) as the molybdenum (Mo) source for co-evaporation. Uniform evaporation rate of the MoO3 thin films provides uniform Mo vapor which promotes highly reproducible single crystal growth of MoS2 throughout the substrate. These high-quality crystals are as large as 95 um and were characterized by scanning electron microscopy, Raman spectroscopy, photoluminescence spectroscopy, atomic force microscopy and transmission electron microscopy. The bottom gated field effect transistors fabricated using the as grown single crystals show n-type transistor behavior with a good on/off ratio of 10^6 under ambient condition. Our results presented here addresses the precursor vapor control during the CVD process and is a major step forward toward reproducible growth of MoS2 for future semiconductor device applications.
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Submitted 9 January, 2019; v1 submitted 14 November, 2018;
originally announced November 2018.
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Photoluminescence Quenching in Single-layer MoS2 via Oxygen Plasma Treatment
Authors:
Narae Kang,
Hari P. Paudel,
Michael N. Leuenberger,
Laurene Tetard,
Saiful I. Khondaker
Abstract:
By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete quenching, accompanied by gradual reduction and broadening of MoS2 Raman modes, indicative of distortion of the MoS2 lattice after oxygen bombardment. X-ray pho…
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By creating defects via oxygen plasma treatment, we demonstrate optical properties variation of single-layer MoS2. We found that, with increasing plasma exposure time, the photoluminescence (PL) evolves from very high intensity to complete quenching, accompanied by gradual reduction and broadening of MoS2 Raman modes, indicative of distortion of the MoS2 lattice after oxygen bombardment. X-ray photoelectron spectroscopy study shows the appearance of Mo6+ peak, suggesting the creation of MoO3 disordered regions in the MoS2 flake. Finally, using band structure calculations, we demonstrate that the creation of MoO3 disordered domains upon exposure to oxygen plasma leads to a direct to indirect bandgap transition in single-layer MoS2, which explains the observed PL quenching.
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Submitted 26 August, 2014; v1 submitted 3 May, 2014;
originally announced May 2014.
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Recent progress in parallel fabrication of individual single walled carbon nanotube devices
Authors:
Muhammad R. Islam,
Saiful I. Khondaker
Abstract:
Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Compl…
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Single walled carbon nanotubes (SWNTs) have attracted immense research interest because of their remarkable physical and electronic properties. In particular, electronic devices fabricated using individual SWNT have shown outstanding device performance surpassing those of Si. However, for the widespread application of SWNTs based electronic devices, parallel fabrication techniques along with Complementary Metal Oxide (CMOS) compatibility are required. One technique that has the potential to integrate SWNTs at the selected position of the circuit in a parallel fashion is AC dielectrophoresis (DEP). In this paper, we review recent progress in the parallel fabrication of SWNT-based devices using DEP. The review begins with a theoretical background for the DEP and then discusses various parameters affecting DEP assembly of SWNTs. We also review the electronic transport properties of the DEP assembled devices and show that high performance devices can be fabricated using DEP. The technique for fabricating all semiconducting field effect transistor using DEP is also reviewed. Finally, we discuss the challenges and opportunities for the DEP assembly of SWNTs.
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Submitted 2 May, 2014;
originally announced May 2014.
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Photoluminescence quenching in gold - MoS2 hybrid nanoflakes
Authors:
Udai Bhanu,
Muhammad R. Islam,
Laurene Tetard,
Saiful I. Khondaker
Abstract:
Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science as it constitutes an outstanding platf…
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Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science as it constitutes an outstanding platform to investigate plasmonic-exciton interactions and charge transfer. The applied aspects of such systems introduce new options for electronics, photovoltaics, detectors, gas sensing, catalysis, and biosensing. Here we consider pristine MoS2 and study its interaction with Au nanoislands, resulting in local variations of photoluminescence (PL) associated with various Au-MoS2 hybrid configurations. By controllably depositing monolayers of Au on MoS2 to form Au nanostructures of given size and thickness, we investigate the electronic structure of the resulting hybrid systems. We present strong evidence of PL quenching of MoS2 as a result of charge transfer from MoS2 to Au: p-do** of MoS2. The results suggest new avenues for 2D nanoelectronics, active control of transport or catalytic properties.
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Submitted 24 June, 2014; v1 submitted 22 April, 2014;
originally announced April 2014.
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Electrical property tuning via defect engineering of single layer MoS2 by oxygen plasma
Authors:
Muhammad R. Islam,
Narae Kang,
Udai Bhanu,
Hari P. Paudel,
Mikhail Erementchouk,
Laurene Tetard,
Michael N. Leuenberger,
Saiful I. Khondaker
Abstract:
We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single layer MoS2 devices were varied up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectro…
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We demonstrate that the electrical property of a single layer molybdenum disulfide (MoS2) can be significantly tuned from semiconducting to insulating regime via controlled exposure to oxygen plasma. The mobility, on-current and resistance of single layer MoS2 devices were varied up to four orders of magnitude by controlling the plasma exposure time. Raman spectroscopy, X-ray photoelectron spectroscopy and density functional theory studies suggest that the significant variation of electronic properties is caused by the creation of insulating MoO3-rich disordered domains in the MoS2 sheet upon oxygen plasma exposure, leading to an exponential variation of resistance and mobility as a function of plasma exposure time. The resistance variation calculated using an effective medium model is in excellent agreement with the measurements. The simple approach described here can be used for the fabrication of tunable two dimensional nanodevices on MoS2 and other transition metal dichalcogenides.
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Submitted 20 April, 2014;
originally announced April 2014.
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High Performance Semiconducting Enriched Carbon Nanotube Thin Film Transistors Using Metallic Carbon Nanotube Electrode
Authors:
Biddut K. Sarker,
Narae Kang,
Saiful I. Khondaker
Abstract:
High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting enriched CNTs (s-CNTs) as channel material. The electrical transport measurements at room temperature show that the m-CNT contacted s-CNT array devices with a 2…
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High-performance solution-processed short-channel carbon nanotube (CNT) thin film transistors (TFTs) are fabricated using densely aligned arrays of metallic CNTs (m-CNTs) as source and drain electrodes, and aligned arrays of semiconducting enriched CNTs (s-CNTs) as channel material. The electrical transport measurements at room temperature show that the m-CNT contacted s-CNT array devices with a 2 um channel length perform superiorly to those of control Pd contacted s-CNT devices. The m-CNT contacted devices exhibit a maximum (average) on-conductance of 36.5 uS (19.2 uS), transconductance of 2.6 uS (1.2 uS), mobility of 51 cm2/Vs (25 cm2/Vs), and current on-off ratio of 1.1x10E6 (2.5x10E5). These values are almost an order of magnitude higher than that of control Pd contacted devices with the same channel length and s-CNT linear density. The low temperature charge transport measurements suggest that these improved performances are due to the lower charge injection barrier of m-CNT/s-CNT array devices compared to Pd/s-CNT array devices. We attribute the lower injection barrier to unique geometry of our devices. In addition to using semiconducting enriched CNT, our results suggest that using metallic CNT as an electrode can significantly enhance the performance of CNT TFTs.
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Submitted 25 December, 2013;
originally announced December 2013.
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The Effect of Carbon Nanotube/Organic Semiconductor Interfacial Area on the Performance of Organic Transistors
Authors:
Narae Kang,
Biddut K. Sarker,
Saiful I. Khondaker
Abstract:
We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/μm) to the Pd electrodes. The average mobility is increased three, six and nine times for low, medium and high SWCNT densities, respectively,…
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We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/μm) to the Pd electrodes. The average mobility is increased three, six and nine times for low, medium and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performance using reduced barrier height of SWCNT/pentacene interface.
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Submitted 5 October, 2012;
originally announced October 2012.
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Efros-Shklovskii variable range hop** in reduced graphene oxide sheets of varying carbon sp2 fraction
Authors:
Daeha Joung,
Saiful I. Khondaker
Abstract:
We investigate the low temperature electron transport properties of chemically reduced graphene oxide (RGO) sheets with different carbon sp2 fractions of 55 to 80 %. We show that in the low bias (Ohmic) regime, the temperature (T) dependent resistance (R) of all the devices follow Efros-Shklovskii variable range hop** (ES-VRH) R ~ exp[(T(ES)/T)^1/2] with T(ES) decreasing from 30976 to 4225 K and…
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We investigate the low temperature electron transport properties of chemically reduced graphene oxide (RGO) sheets with different carbon sp2 fractions of 55 to 80 %. We show that in the low bias (Ohmic) regime, the temperature (T) dependent resistance (R) of all the devices follow Efros-Shklovskii variable range hop** (ES-VRH) R ~ exp[(T(ES)/T)^1/2] with T(ES) decreasing from 30976 to 4225 K and electron localization length increasing from 0.46 to 3.21 nm with increasing sp2 fraction. From our data, we predict that for the temperature range used in our study, Mott-VRH may not be observed even at 100 % sp2 fraction samples due to residual topological defects and structural disorders. From the localization length, we calculate a bandgap variation of our RGO from 1.43 to 0.21 eV with increasing sp2 fraction from 55 to 80 % which agrees remarkably well with theoretical prediction. We also show that, in the high bias regime, the hop** is field driven and the data follow R ~ exp[(E(0)/E)^1/2] providing further evidence of ES-VRH.
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Submitted 5 October, 2012;
originally announced October 2012.
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A general approach for high yield fabrication of CMOS compatible all semiconducting carbon nanotube field effect transistors
Authors:
Muhammad R. Islam,
Kristy J. Kormondy,
Eliot Silbar,
Saiful I. Khondaker
Abstract:
We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon nanotube (s-SWNT) aqueous solution. When the DEP parameters were optimized for the assembly of individual s-SWNT, 97% of the devices show FET behavior with a maximum…
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We report strategies of achieving both high assembly yield of carbon nanotubes at selected position of the circuit via dielectrophoresis (DEP) and field effect transistor (FET) yield using semiconducting enriched single walled carbon nanotube (s-SWNT) aqueous solution. When the DEP parameters were optimized for the assembly of individual s-SWNT, 97% of the devices show FET behavior with a maximum mobility of 210 cm2/Vs, on-off current ratio ~ 106 and on conductance up to 3 μS, however with an assembly yield of only 33%. As the DEP parameters were optimized so that 1-5 s-SWNTs are connected per electrode pair, the assembly yield was almost 90% with ~ 90% of these assembled devices demonstrating FET behavior. Further optimization gives an assembly yield of 100% with up to 10 SWNT/site, however with a reduced FET yield of 59%. Improved FET performance including higher current on-off ratio and high switching speed were obtained by integrating a local Al2O3 gate to the device. Our 90% FET with 90% assembly yield is the highest reported so far for carbon nanotube devices. Our study provides a pathway which could become a general approach for the high yield fabrication of CMOS compatible carbon nanotube FETs.
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Submitted 10 November, 2011;
originally announced November 2011.
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Huge Volume Expansion and Structural Transformation of Carbon Nanotube Aligned Arrays during Electrical Breakdown in Vacuum
Authors:
Shashank Shekhar,
Helge Heinrich,
Saiful I. Khondaker
Abstract:
We observed a huge volume expansion of aligned single walled carbon nanotube (SWNT) arrays accompanied by structural transformation during electrical breakdown in vacuum. The SWNT arrays were assembled between prefabricated Pd source and drain electrodes of 2 μm separation on Si/SiO_2 substrate via dielectrophoresis. At high electrical field, the SWNT arrays erupt into large mushroom-like structur…
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We observed a huge volume expansion of aligned single walled carbon nanotube (SWNT) arrays accompanied by structural transformation during electrical breakdown in vacuum. The SWNT arrays were assembled between prefabricated Pd source and drain electrodes of 2 μm separation on Si/SiO_2 substrate via dielectrophoresis. At high electrical field, the SWNT arrays erupt into large mushroom-like structure. Systematic studies with controlled electrical bias show that above a certain field SWNTs swell and transform to nanoparticles and flower-like structures with small volume increase. Further increase in electrical bias and repeated swee** results into amorphous carbon as determined from scanning and transmission electron microscopy (TEM). Cross sectional studies using focused ion beam and TEM show the height of 2-3 nm SWNT array increased to about 1 μm with a volume gain of ~ 400 times. The electron energy loss spectroscopy reveals that graphitic sp^2 networks of SWNTs are transformed predominantly to sp^3. The current-voltage measurements also show an increase in the resistance of the transformed structure.
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Submitted 9 July, 2011;
originally announced July 2011.
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Anchoring ceria nanoparticles on reduced graphene oxide and their electronic transport properties
Authors:
Daeha Joung,
Virendra Singh,
Sanghoon Park,
Alfons Schulte,
Sudipta Seal,
Saiful I. Khondaker
Abstract:
This paper has been withdrawn.
This paper has been withdrawn.
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Submitted 21 September, 2011; v1 submitted 8 July, 2011;
originally announced July 2011.
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Semiconducting enriched carbon nanotube align arrays of tunable density and their electrical transport properties
Authors:
Biddut K. Sarker,
Shashank Shekhar,
Saiful I. Khondaker
Abstract:
We demonstrate assembly of solution processed semiconducting enriched (99%) single walled carbon nanotubes (s-SWNT) in an array with varying linear density via ac-dielectrophoresis and investigate detailed electronic transport properties of the fabricated devices. We show that (i) the quality of the alignment varies with frequency of the applied voltage and that (ii) by varying the frequency and c…
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We demonstrate assembly of solution processed semiconducting enriched (99%) single walled carbon nanotubes (s-SWNT) in an array with varying linear density via ac-dielectrophoresis and investigate detailed electronic transport properties of the fabricated devices. We show that (i) the quality of the alignment varies with frequency of the applied voltage and that (ii) by varying the frequency and concentration of the solution, we can control the linear density of the s-SWNTs in the array from 1/μm to 25 /μm. The maximum linear density of 25 s-SWNT /\mum reported here is the highest for any aligned semiconducting array. The DEP assembled s-SWNT devices provide opportunity to investigate transport property of the arrays in the direct transport regime. Room temperature electron transport measurements of the fabricated devices show that with increasing nanotube density the device mobility increases while the current on-off ratio decreases dramatically. For the dense array, the device current density was 16 μA/μm, on-conductance was 390 μS, and sheet resistance was 30 kΩ/\square. These values are the best reported so far for any semiconducting nanotube array.
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Submitted 4 May, 2011;
originally announced May 2011.
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Correlated breakdown of carbon nanotubes in an ultra-high density aligned array
Authors:
Shashank Shekhar,
Mikhail Erementchouk,
Michael N. Leuenberger,
Saiful I. Khondaker
Abstract:
We demonstrate that in a densely packed aligned array of single walled carbon nanotubes, the breakdown of one nanotube leads to a highly correlated breakdown of neighboring nanotubes, thereby producing a nano-fissure. We show that the origin of the correlation is the electrostatic field of the broken nanotubes that produces locally inhomogeneous current and Joule heating distributions in the neigh…
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We demonstrate that in a densely packed aligned array of single walled carbon nanotubes, the breakdown of one nanotube leads to a highly correlated breakdown of neighboring nanotubes, thereby producing a nano-fissure. We show that the origin of the correlation is the electrostatic field of the broken nanotubes that produces locally inhomogeneous current and Joule heating distributions in the neighboring intact nanotubes triggering their breakdowns in the vicinity of the broken nanotubes. Our results suggest that the densely aligned array behaves like a correlated solid.
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Submitted 20 January, 2011;
originally announced January 2011.
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Ultra-high density alignment of carbon nanotubes array by dielectrophoresis
Authors:
Shashank Shekhar,
Paul Stokes,
Saiful I. Khondaker
Abstract:
We report ultra-high density assembly of aligned single walled carbon nanotubes (SWNTs) two dimensional arrays via ac dielectrophoresis using high quality surfactant free and stable SWNT solutions. After optimization of frequency and trap** time, we can reproducibly control the linear density of the SWNT between prefabricated electrodes from 0.5 SWNT/\mum to more than 30 SWNT /\mum by tuning the…
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We report ultra-high density assembly of aligned single walled carbon nanotubes (SWNTs) two dimensional arrays via ac dielectrophoresis using high quality surfactant free and stable SWNT solutions. After optimization of frequency and trap** time, we can reproducibly control the linear density of the SWNT between prefabricated electrodes from 0.5 SWNT/\mum to more than 30 SWNT /\mum by tuning the concentration of the nanotubes in the solution. Our maximum density of 30 SWNT/\mum is the highest for aligned arrays via any solution processing technique reported so far. Further increase of SWNT concentration results dense array with multiple layers. We discuss how the orientation and density of the nanotubes vary with concentrations and channel lengths. Electrical measurement data show that the densely packed aligned arrays have low sheet resistances. Selective removal of metallic SWNTs via controlled electrical breakdown produced field effect transistors (FET) with high current on-off ratio. Ultra-high density alignment reported here will have important implications in fabricating high quality devices for digital and analog electronics.
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Submitted 11 January, 2011;
originally announced January 2011.
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Coulomb Blockade and Hop** Conduction in Graphene Quantum Dots Array
Authors:
Daeha Joung,
Lei Zhai,
Saiful I. Khondaker
Abstract:
We show that the low temperature electron transport properties of chemically functionalized graphene can be explained as sequential tunneling of charges through a two dimensional array of graphene quantum dots (GQD). Below 15 K, a total suppression of current due to Coulomb blockade through GQD array was observed. Temperature dependent current-gate voltage characteristics show Coulomb oscillations…
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We show that the low temperature electron transport properties of chemically functionalized graphene can be explained as sequential tunneling of charges through a two dimensional array of graphene quantum dots (GQD). Below 15 K, a total suppression of current due to Coulomb blockade through GQD array was observed. Temperature dependent current-gate voltage characteristics show Coulomb oscillations with energy scales of 6.2-10 meV corresponding to GQD sizes of 5-8 nm while resistance data exhibit an Efros-Shklovskii variable range hop** arising from structural and size induced disorder.
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Submitted 3 February, 2011; v1 submitted 25 October, 2010;
originally announced October 2010.
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Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets
Authors:
Daeha Joung,
A. Chunder,
Lei Zhai,
Saiful I. Khondaker
Abstract:
We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space char…
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We elucidate on the low mobility and charge traps of the chemically reduced graphene oxide (RGO) sheets by measuring and analyzing temperature dependent current-voltage characteristics. The RGO sheets were assembled between source and drain electrodes via dielectrophoresis. At low bias voltage the conduction is Ohmic while at high bias voltage and low temperatures the conduction becomes space charge limited with an exponential distribution of traps. We estimate an average trap density of 1.75x10^16 cm^-3. Quantitative information about charge traps will help develop optimization strategies of passivating defects in order to fabricate high quality solution processed graphene devices.
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Submitted 23 June, 2010;
originally announced June 2010.
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Position dependent photodetector from large area reduced graphene oxide thin films
Authors:
Surajit Ghosh,
Biddut K. Sarker,
Anindarupa Chunder,
Lei Zhai,
Saiful I. Khondaker
Abstract:
We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by…
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We fabricated large area infrared photodetector devices from thin film of chemically reduced graphene oxide (RGO) sheets and studied their photoresponse as a function of laser position. We found that the photocurrent either increases, decreases or remain almost zero depending upon the position of the laser spot with respect to the electrodes. The position sensitive photoresponse is explained by Schottky barrier modulation at the RGO film-electrode interface. The time response of the photocurrent is dramatically slower than single sheet of graphene possibly due to disorder from the chemically synthesis and interconnecting sheets.
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Submitted 16 February, 2010;
originally announced February 2010.
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High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis
Authors:
Daeha Joung,
A. Chunder,
Lei Zhai,
Saiful I. Khondaker
Abstract:
We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET b…
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We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.
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Submitted 2 February, 2010; v1 submitted 30 January, 2010;
originally announced February 2010.
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Near-infrared photoresponse in single walled carbon nanotube/polymer composite films
Authors:
Biddut K. Sarker,
M. Arif,
Saiful I. Khondaker
Abstract:
We present a near-infrared photoresponse study of single-walled carbon nanotube/poly(3-hexylthiophene)-block-polystyrene polymer (SWCNT/P3HT-b-PS) composite films for different loading ratios of SWCNT in the polymer matrix. Compared to the pure SWCNT film, the photoresponse [(light current - dark current)/dark current] is much larger in the SWCNT/polymer composite films. The photoresponse is up…
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We present a near-infrared photoresponse study of single-walled carbon nanotube/poly(3-hexylthiophene)-block-polystyrene polymer (SWCNT/P3HT-b-PS) composite films for different loading ratios of SWCNT in the polymer matrix. Compared to the pure SWCNT film, the photoresponse [(light current - dark current)/dark current] is much larger in the SWCNT/polymer composite films. The photoresponse is up to 157% when SWCNTs are embedded in P3HT-b-PS while for a pure SWCNT film it is only 40%. We also show that the photocurrent strongly depends on the position of the laser spot with maximum photocurrent occurring at the metal-film interface. We explain the photoresponse due to exciton dissociations and charge carrier separation caused by a Schottky barrier at the metallic electrode - SWCNT interface
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Submitted 30 December, 2009; v1 submitted 21 December, 2009;
originally announced December 2009.
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Electronic transport properties of ternary Cd1-xZnxS nanowire network
Authors:
Daeha Joung,
M. Arif,
S. Biswas,
S. Kar,
S. Santra,
Saiful I. Khondaker
Abstract:
We present electronic transport characteristics of ternary alloy Cd1-xZnxS nanowire networks in the dark and under white light illumination. Compared to the negligible dark current, we observed a photocurrent enhancement up to 4 orders of magnitude at intensity of 460 mW/cm2. The time constant of the dynamic photoresponse is ~5 sec. The current-voltage characteristics at different intensities sh…
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We present electronic transport characteristics of ternary alloy Cd1-xZnxS nanowire networks in the dark and under white light illumination. Compared to the negligible dark current, we observed a photocurrent enhancement up to 4 orders of magnitude at intensity of 460 mW/cm2. The time constant of the dynamic photoresponse is ~5 sec. The current-voltage characteristics at different intensities show Ohmic behavior at low bias and space charge limited conduction (SCLC) at higher bias voltages. The SCLC behavior and slow time response indicate that the charge transport is dominated by tunneling at the percolating inter-nanowire junctions.
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Submitted 18 September, 2009;
originally announced September 2009.
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Diffusion mediated photoconduction in multi-walled carbon nanotube films
Authors:
Biddut K. Sarker,
M. Arif,
Paul Stokes,
Saiful I. Khondaker
Abstract:
We investigated the mechanism for photoconduction in multi-walled carbon nanotube (MWNT) film of various electrode separations upon near infrared illumination. In addition to observing strong dependence of photocurrent on the position of the laser spot, we found that the time constant of the dynamic photoresponse is slow and increases with increasing electrode separations. The photoconduction me…
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We investigated the mechanism for photoconduction in multi-walled carbon nanotube (MWNT) film of various electrode separations upon near infrared illumination. In addition to observing strong dependence of photocurrent on the position of the laser spot, we found that the time constant of the dynamic photoresponse is slow and increases with increasing electrode separations. The photoconduction mechanism can be explained by the Schottky barrier modulation at the metal-nanotube film interface and charge carrier diffusion through percolating MWNT networks.
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Submitted 28 April, 2009;
originally announced April 2009.
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Photoresponse in large area multi-walled carbon nanotube/polymer nanocomposite films
Authors:
Paul Stokes,
Liwei Liu,
Jianhua Zou,
Lei Zhai,
Qun Huo,
Saiful I. Khondaker
Abstract:
We present a near IR photoresponse study of large area multi-walled carbon nanotube/poly(3-hexylthiophene)-block-polystyrene polymer (MWNT/P3HT-b-PS) nanocomposite films for different loading ratio of MWNT into the polymer matrix. We show that the photocurrent strongly depends on the position of the laser spot with maxiumum photocurrent occurring at the metal - film interface. In addition, compa…
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We present a near IR photoresponse study of large area multi-walled carbon nanotube/poly(3-hexylthiophene)-block-polystyrene polymer (MWNT/P3HT-b-PS) nanocomposite films for different loading ratio of MWNT into the polymer matrix. We show that the photocurrent strongly depends on the position of the laser spot with maxiumum photocurrent occurring at the metal - film interface. In addition, compared to the pure MWNT film, the photoresponse is much larger in the MWNT/polymer composite films. The time constant for the photoresponse is slow and varies between 0.6 and 1.2 seconds. We explain the photoresponse by Schottky barrier modulation at the metal - film interface.
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Submitted 28 December, 2008;
originally announced December 2008.
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Solution processed large area field effect transistors from dielectrophoreticly aligned arrays of carbon nanotubes
Authors:
Paul Stokes,
Eliot Silbar,
Yashira M. Zayas,
Saiful I. Khondaker
Abstract:
We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain electrodes using ac dielectrophoresis technique. After removing the metallic nanotubes using electrical breakdown, the devices displayed p-type behavior with…
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We demonstrate solution processable large area field effect transistors (FETs) from aligned arrays of carbon nanotubes (CNTs). Commercially available, surfactant free CNTs suspended in aqueous solution were aligned between source and drain electrodes using ac dielectrophoresis technique. After removing the metallic nanotubes using electrical breakdown, the devices displayed p-type behavior with on-off ratios up to ~ 2X10^4. The measured field effect mobilities are as high as 123 cm2/Vs, which is three orders of magnitude higher than typical solution processed organic FET devices.
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Submitted 20 April, 2009; v1 submitted 28 December, 2008;
originally announced December 2008.
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Controlled fabrication of single electron transistors from single-walled carbon nanotubes
Authors:
Paul Stokes,
Saiful I. Khondaker
Abstract:
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and charging energies of 12-15 meV with level spacing of ~5 meV were measured from the Couloumb diamond, in agreement with a dot size of ~100 nm, implying that the loc…
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Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and charging energies of 12-15 meV with level spacing of ~5 meV were measured from the Couloumb diamond, in agreement with a dot size of ~100 nm, implying that the local gate defines the dot size by bending SWNT at the edges and controls its operation. This "mechanical template" approach may facilitate large scale fabrication of SET devices using SWNT.
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Submitted 16 June, 2008; v1 submitted 4 April, 2008;
originally announced April 2008.
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Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis
Authors:
Paul Stokes,
Saiful I. Khondaker
Abstract:
We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET d…
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We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube from dichloroethane via AC dielectrophoresis (DEP) onto pre-patterned source and drain electrodes with a local aluminum gate in the middle. Local-gated CNT-FET devices display superior performance compared to global back gate with on-off ratios 10^4 and maximum subthreshold swings of 170 mV/dec. The local bottom-gated DEP assembled CNT-FETs will facilitate large scale fabrication of complementary metal-oxide-semiconductor (CMOS) compatible nanoelectronic devices.
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Submitted 21 January, 2008; v1 submitted 20 November, 2007;
originally announced November 2007.
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Fabrication of nanometer-spaced electrodes using gold nanoparticles
Authors:
Saiful I. Khondaker,
Zhen Yao
Abstract:
A simple and highly reproducible technique is demonstrated for the fabrication of metallic electrodes with nanometer separation. Commercially available bare gold colloidal nanoparticles are first trapped between prefabricated large-separation electrodes to form a low-resistance bridge by an ac electric field. A large dc voltage is then applied to break the bridge via electromigration at room tem…
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A simple and highly reproducible technique is demonstrated for the fabrication of metallic electrodes with nanometer separation. Commercially available bare gold colloidal nanoparticles are first trapped between prefabricated large-separation electrodes to form a low-resistance bridge by an ac electric field. A large dc voltage is then applied to break the bridge via electromigration at room temperature, which consistently produces gaps in the sub-10 nm range. The technique is readily applied to prefabricated electrodes with separation up to 1 micron, which can be defined using optical lithography. The simple fabrication scheme will facilitate electronic transport studies of individual nanostructures made by chemical synthesis. As an example, measurement of a thiol-coated gold nanoparticle showing a clear Coulomb staircase is presented.
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Submitted 11 November, 2002;
originally announced November 2002.
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A possible role of D^- band in hop** conductivity and metal-insulator transition in 2D structures
Authors:
V. I. Kozub,
N. V. Agrinskaya,
S. I. Khondaker,
I. Shlimak
Abstract:
A simple two-band model is suggested explaining recently reported unusual features for hop** magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D^- band). Experimental studies of hop** magnetoresistance for Si delta doped GaAs/AlGaAs heterostructure give additional evidences for the model.
A simple two-band model is suggested explaining recently reported unusual features for hop** magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D^- band). Experimental studies of hop** magnetoresistance for Si delta doped GaAs/AlGaAs heterostructure give additional evidences for the model.
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Submitted 27 November, 1999;
originally announced November 1999.
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Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hop** mechanism of conductivity
Authors:
I. Shlimak,
S. I. Khondaker,
M. Pepper,
D. A. Ritchie
Abstract:
Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hop** (VRH) mechanism of conductivity. Effect of large PMR is accompanied in strong magnetic fields by a substantial change in the character of the temperature dependence of the conductivity. This implies that spins play…
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Large positive (P) magnetoresistance (MR) has been observed in parallel magnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAs heterostructure with a variable-range-hop** (VRH) mechanism of conductivity. Effect of large PMR is accompanied in strong magnetic fields by a substantial change in the character of the temperature dependence of the conductivity. This implies that spins play an important role in 2D VRH conductivity because the processes of orbital origin are not relevant to the observed effect. A possible explanation involves hop** via double occupied states in the upper Hubbard band, where the intra-state correlation of spins is important.
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Submitted 14 October, 1999;
originally announced October 1999.
