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Strategies for the alignment of electronic states in quantum-dot tunnel-injection lasers and their influence on the emission dynamics
Authors:
Michael Lorke,
Igor Khanonkin,
Stephan Michael,
Johann Peter Reithmaier,
Gadi Eisenstein,
Frank Jahnke
Abstract:
In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic levels is crucial for the high efficiency of these processes and especially for the fast modulation dynamics of these lasers. In particular, the quantum mechani…
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In quantum-dot tunnel-injection lasers, the excited charge carriers are efficiently captured from the bulk states via an injector quantum well and then transferred into the quantum dots via a tunnel barrier. The alignment of the electronic levels is crucial for the high efficiency of these processes and especially for the fast modulation dynamics of these lasers. In particular, the quantum mechanical nature of the tunneling process must be taken into account in the transition from two-dimensional quantum well states to zero-dimensional quantum dot states. This results in hybrid states, from which the scattering into the quantum-dot ground states takes place. We combine electronic state calculations of the tunnel-injection structures with many-body calculations of the scattering processes and insert this into a complete laser simulator. This allows us to study the influence of the level alignment and limitations due to inhomogeneous quantum-dot distributions. We find that the optimal alignment deviates from a simple picture in which the of the quantum-dot ground state energies are one LO-phonon energy below the injector quantum well ground state. \author{Frank Jahnke
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Submitted 28 February, 2024;
originally announced February 2024.
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Carrier dynamics in quantum-dot tunnel-injection structures: microscopic theory and experiment
Authors:
Michael Lorke,
Igor Khanonkin,
Stephan Michael,
Johann Peter Reithmaier,
Gadi Eisenstein,
Frank Jahnke
Abstract:
Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneling process itself depends on band alignment between quantum-dot levels and the injector quantum well, especially as in these devices LO-phonon scattering is domi…
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Tunneling-injection structures are incorporated in semiconductor lasers in order to overcome the fundamental dynamical limitation due to hot carrier injection by providing a carrier transport path from a cold carrier reservoir. The tunneling process itself depends on band alignment between quantum-dot levels and the injector quantum well, especially as in these devices LO-phonon scattering is dominant. Quantum dots with their first excited state near the quantum well bottom profit most from tunnel coupling. As inhomogeneous broadening is omnipresent in quantum dot structures, this implies that individual members of the ensemble couple differently to the injector quantum well. Quantum dots with higher energy profit less, as the phonon couples to higher, less occupied states. Likewise, if the energy difference between ground state and quantum well exceeds the LO phonon energy, scattering becomes increasingly inefficient. Therefore, within 20-30meV we find Quantum Dots that benefit substantially different from the tunnel coupling. Furthermore, in quantum dots with increasing confinement depth, excited states become sucessively confined. Here, scattering gets more efficient again, as subsequent excited states reach the phonon resonance with the quantum well bottom. Our results provide guidelines for the optimization of tunnel-injection lasers. Theoretical results for electronic state caluluations in connection with carrier-phonon and carrier-carrier scattering are compared to experimental results of the temporal gain recovery after a short pulse perturbation.
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Submitted 31 May, 2022;
originally announced May 2022.
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On the carrier transport and radiative recombination mechanisms in tunneling injection quantum dot lasers
Authors:
V. Mikhelashvili,
S. Bauer,
I. Khanonkin,
O. Eyal,
G. Seri,
L. Gal,
J. P. Reithmaier,
G. Eisenstein
Abstract:
We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompanied by physical models that distinguish between different current flow and light emission mechanisms for different applied voltages and temperature ranges. Three…
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We report temperature-dependent current-voltage (I - V - T) and output light power-voltage or current (P - V - T) or (P - I - T) characteristics of 1550 nm tunneling injection quantum dot (TI QD) laser diodes. Experimental data is accompanied by physical models that distinguish between different current flow and light emission mechanisms for different applied voltages and temperature ranges. Three exponential regimes in the I - V characteristics were identified for low bias levels where no optical radiation takes place. At the lowest bias levels, the diffusion-recombination mechanism based on the classical Shockley-Reid-Hall theory dominates. This is followed, at low and near room temperature, by a combination of weak tunneling and generation-recombination, respectively. In the third exponential region, for all temperatures carrier transport is dictated by strong tunneling, which is characterized by a temperature-independent slope of the I - V curves and a variable ideality factor. The I - V results were compared to a conventional QD laser in which the current flow mechanisms of the first and third types are absent, which clearly demonstrates the key role played by the TI layer.
In the post-exponential voltage range, when the diodes are in the high injection regime, the characteristics of the two types of diodes are identical. The typical behavior at the threshold current, where the output power increases fast has a clear signature in the I - V characteristics. Finally, an analytical quantitative relationship is established between the light output power and the applied voltage and current as well as the carrier density participating in radiative recombination.
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Submitted 14 August, 2021;
originally announced August 2021.
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Room Temperature Quantum Coherent Revival in an Ensemble of Artificial Atoms
Authors:
Igor Khanonkin,
Ori Eyal,
Johann Peter Reithmaier,
Gadi Eisenstein
Abstract:
We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamical QD properties present an opportunity for practical room temperature building blocks of quantum information processing. The amplitude decay of QCR i…
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We report a demonstration of the hallmark concept of quantum optics: periodic collapse and revival of quantum coherence (QCR) in a room temperature ensemble of quantum dots (QD). Control over quantum states, inherent to QCR, together with the dynamical QD properties present an opportunity for practical room temperature building blocks of quantum information processing. The amplitude decay of QCR is dictated by the QD homogeneous linewidth, thus, enabling its extraction in a double-pulse Ramsey-type experiment. The more common photon echo technique was also invoked and yielded the same linewidth. Measured electrical bias and temperature dependencies of the transverse relaxation times enable to determine the two main decoherence mechanisms: carrier-carrier and carrier-phonon scatterings.
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Submitted 28 October, 2020;
originally announced October 2020.
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Carrier Dynamics in a Tunneling Injection Quantum Dot Semiconductor Optical Amplifier
Authors:
I. Khanonkin,
M. Lorke,
S. Michael,
A. K. Mishra,
J. P. Reithmaier,
F. Jahnke,
G. Eisenstein
Abstract:
The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is…
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The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the fact that it avoids hot carrier injection, which is a key performance-limiting factor in all semiconductor lasers. The tunneling injection process is not fully understood microscopically and therefore it is difficult to optimize those laser structures. We present here a numerical study of the broad band carrier dynamics in a tunneling injection quantum dot gain medium in the form of an optical amplifier operating at 1.55 um. Charge carrier tunneling occurs in a hybrid state that joins the quantum dot first excited state and the confined quantum well - injection well states. The hybrid state, which is placed energetically roughly one LO phonon above the ground state and has a spectral extent of about 5 meV , dominates the carrier injection to the ground state. We calculate the dynamical response of the inversion across the entire gain spectrum following a short pulse perturbation at various wavelengths and for two bias currents. At a high bias of 200 mA, the entire spectrum exhibits gain; at 30 mA, the system exhibits a mixed gain - absorption spectrum. The carrier dynamics in the injection well is calculated simultaneously. We discuss the role of the pulse excitation wavelengths relative to the gain spectrum peak and demonstrate that the injection well responds to all perturbation wavelengths, even those which are far from the region where the tunneling injection process dominates.
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Submitted 22 July, 2018;
originally announced July 2018.
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Ramsey fringes in a room temperature quantum dot semiconductor optical amplifier
Authors:
Igor Khanonkin,
Akhilesh K. Mishra,
Ouri Karni,
Saddam Banyoudeh,
Florian Schnabel,
Vitalii Sichkovskyi,
Vissarion Michelashvili,
Johann P. Reithmaier,
Gadi Eisenstein
Abstract:
The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical applications. We demonstrate here a quantum interference phenomena, Ramsey fringes, in an inhomogeneously broadened InAs/InP quantum dot (QD) ensemble in the form of a 1.5…
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The ability to induce, observe and control quantum coherent interactions in room temperature, electrically driven optoelectronic devices is of outmost significance for advancing quantum science and engineering towards practical applications. We demonstrate here a quantum interference phenomena, Ramsey fringes, in an inhomogeneously broadened InAs/InP quantum dot (QD) ensemble in the form of a 1.5 mm long optical amplifier operating at room temperature. Observation of Ramsey fringes in semiconductor QD was previously achieved only at cryogenic temperatures and only in isolated single dot systems. A high-resolution pump probe scheme where both pulses are characterized by cross frequency resolved optical gating (X-FROG) reveals a clear oscillatory behavior both in the amplitude and the instantaneous frequency of the probe pulse with a period that equals one optical cycle at operational wavelength. Using nominal input delays of 600 to 900 fs and scanning the separation around each delay in 1 fs steps, we map the evolution of the material de-coherence and extract a coherence time. Moreover we notice a unique phenomenon, which can not be observed in single dot systems, that the temporal position of the output probe pulse also oscillates with the same periodicity but with a quarter cycle delay relative to the intensity variations. This delay is the time domain manifestation of coupling between the real and imaginary parts of the complex susceptibility.
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Submitted 2 December, 2017; v1 submitted 21 August, 2017;
originally announced August 2017.
