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The Ratio Index for Budgeted Learning, with Applications
Authors:
Ashish Goel,
Sanjeev Khanna,
Brad Null
Abstract:
In the budgeted learning problem, we are allowed to experiment on a set of alternatives (given a fixed experimentation budget) with the goal of picking a single alternative with the largest possible expected payoff. Approximation algorithms for this problem were developed by Guha and Munagala by rounding a linear program that couples the various alternatives together. In this paper we present an…
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In the budgeted learning problem, we are allowed to experiment on a set of alternatives (given a fixed experimentation budget) with the goal of picking a single alternative with the largest possible expected payoff. Approximation algorithms for this problem were developed by Guha and Munagala by rounding a linear program that couples the various alternatives together. In this paper we present an index for this problem, which we call the ratio index, which also guarantees a constant factor approximation. Index-based policies have the advantage that a single number (i.e. the index) can be computed for each alternative irrespective of all other alternatives, and the alternative with the highest index is experimented upon. This is analogous to the famous Gittins index for the discounted multi-armed bandit problem.
The ratio index has several interesting structural properties. First, we show that it can be computed in strongly polynomial time. Second, we show that with the appropriate discount factor, the Gittins index and our ratio index are constant factor approximations of each other, and hence the Gittins index also gives a constant factor approximation to the budgeted learning problem. Finally, we show that the ratio index can be used to create an index-based policy that achieves an O(1)-approximation for the finite horizon version of the multi-armed bandit problem. Moreover, the policy does not require any knowledge of the horizon (whereas we compare its performance against an optimal strategy that is aware of the horizon). This yields the following surprising result: there is an index-based policy that achieves an O(1)-approximation for the multi-armed bandit problem, oblivious to the underlying discount factor.
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Submitted 11 April, 2016; v1 submitted 2 October, 2008;
originally announced October 2008.
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First-principles study of TMNan (TM= Cr, Mn, Fe, Co, Ni; n = 4-7) clusters
Authors:
Kalpataru Pradhan,
Prasenjit Sen,
J. Ulises Reveles,
Shiv N. Khanna
Abstract:
Geometry, electronic structure, and magnetic properties of TMNan (TM=Cr-Ni; n = 4-7) clusters are studied within a gradient corrected density functional theory (DFT) framework. Two complementary approaches, the first adapted to all-electron calculations on free clusters, and the second been on plane wave projector augmented wave (PAW) method within a supercell approach are used. Except for NiNan…
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Geometry, electronic structure, and magnetic properties of TMNan (TM=Cr-Ni; n = 4-7) clusters are studied within a gradient corrected density functional theory (DFT) framework. Two complementary approaches, the first adapted to all-electron calculations on free clusters, and the second been on plane wave projector augmented wave (PAW) method within a supercell approach are used. Except for NiNan, the clusters in this series are found to retain the atomic moments of the TM atoms, and the magnetic moment presented an odd-even oscillation with respect to the number of Na atoms. The origin of these odd-even oscillations is explained from the nature of chemical bonding in these clusters. Differences and similarities between the chemical bonding and the magnetic properties of these clusters and the TMNan (TM = Sc, V and Ti; n = 4-6) clusters on one hand, and TM-doped Au and Ag clusters on the other hand, are discussed.
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Submitted 2 April, 2008;
originally announced April 2008.
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First principles study of Sc, Ti and V doped Na$_n$(n =4, 5, 6) clusters: Enhanced magnetic moments
Authors:
Kalpataru Pradhan,
Prasenjit Sen,
J. U. Reveles,
S. N. Khanna
Abstract:
Theoretical studies on the geometry, electronic structure and spin multiplicity of Sc, Ti and V doped Na$_n$ (n = 4, 5, 6) clusters have been carried out within a gradient corrected density functional approach. Two complementary approaches including all-electron calculations on free clusters, and supercell calculations using planewave pseudopotential and projector augmented wave formalisms have…
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Theoretical studies on the geometry, electronic structure and spin multiplicity of Sc, Ti and V doped Na$_n$ (n = 4, 5, 6) clusters have been carried out within a gradient corrected density functional approach. Two complementary approaches including all-electron calculations on free clusters, and supercell calculations using planewave pseudopotential and projector augmented wave formalisms have been carried out. It is shown that spin magnetic moments of the transition metal atoms, the magnitude of host polarization, and the sign of the host polarization all change with the number of alkali atoms. In particular the transition metal atoms are shown to attain spin moments that are higher than their atomic values. The role of hybridization between the transition atom d-states and the alkali $sp$-states is highlighted to account for the evolutions in the spin moments and host polarization.
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Submitted 29 November, 2007;
originally announced November 2007.
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Radiative Recombination Spectra of Heavily p-Type delta-Doped Gaas/Alas MQWs
Authors:
J. Kundrotas,
A. Cerskus,
G. Valusis,
M. Lachab,
S. P. Khanna,
P. Harrison,
E. H. Linfield
Abstract:
We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transit…
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We present a study of the photoluminescence (PL) properties of heavily Be delta-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors PL emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the MQW samples exhibiting 15 nm wells width and 5 nm-thick barrier layers is about 3 10E12 cm-2.
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Submitted 4 November, 2007;
originally announced November 2007.
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Terahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells
Authors:
D. Seliuta,
J. Kavaliauskas,
B. Cechavicius,
S. Balakauskas,
G. Valusis,
B. Sherliker,
M. P. Halsall,
P. Harrison,
M. Lachab,
S. P. Khanna,
E. H. Linfield
Abstract:
Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in pho…
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Selective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in photoreflectance spectra were found to be located close to the cap and buffer layers of MQWs and vary from 18 kV/cm up to 49 kV/cm depending on the structure design.
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Submitted 3 November, 2007;
originally announced November 2007.
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Terahertz detection with delta-doped GaAs/AlAs multiple quantum wells
Authors:
D. Seliuta,
B. Cechavicius,
J. Kavaliauskas,
G. Krivaite,
I. Grigelionis,
S. Balakauskas,
G. Valusis,
B. Sherliker,
M. P. Halsall,
M. Lachab,
S. P. Khanna,
P. Harrison,
E. H. Linfield
Abstract:
The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found…
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The authors demonstrate selective detection of terahertz radiation employing beryllium delta-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electro-reflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
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Submitted 3 November, 2007;
originally announced November 2007.
