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A magnetically-induced Coulomb gap in graphene due to electron-electron interactions
Authors:
E. E. Vdovin,
M. T. Greenaway,
Yu. N. Khanin,
S. V. Morozov,
O. Makarovsky,
A. Patanè,
A. Mishchenko,
S. Slizovskiy,
V. I. Fal'ko,
A. K. Geim,
K. S. Novoselov,
L. Eaves
Abstract:
Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its…
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Insights into the fundamental properties of graphene's Dirac-Weyl fermions have emerged from studies of electron tunnelling transistors in which an atomically thin layer of hexagonal boron nitride (hBN) is sandwiched between two layers of high purity graphene. Here, we show that when a single defect is present within the hBN tunnel barrier, it can inject electrons into the graphene layers and its sharply defined energy level acts as a high resolution spectroscopic probe of electron-electron interactions in graphene. We report a magnetic field dependent suppression of the tunnel current flowing through a single defect below temperatures of $\sim$ 2 K. This is attributed to the formation of a magnetically-induced Coulomb gap in the spectral density of electrons tunnelling into graphene due to electron-electron interactions.
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Submitted 4 July, 2023;
originally announced July 2023.
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Tunnel spectroscopy of localised electronic states in hexagonal boron nitride
Authors:
M. T. Greenaway,
E. E. Vdovin,
D. Ghazaryan,
A. Misra,
A. Mishchenko,
Y. Cao,
Z. Wang,
J. R. Wallbank,
M. Holwill,
Yu. N. Khanin,
S. V. Morozov,
K. Watanabe,
T. Taniguchi,
O. Makarovsky,
T. M. Fromhold,
A. Patanè,
A. K. Geim,
V. I. Fal'ko,
K. S. Novoselov,
L. Eaves
Abstract:
Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical…
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Hexagonal boron nitride (hBN) is a large band gap layered crystal, frequently incorporated in van der Waals (vdW) heterostructures as an insulating or tunnel barrier. Localised states with energies within its band gap can emit visible light, relevant to applications in nanophotonics and quantum information processing. However, they also give rise to conducting channels, which can induce electrical breakdown when a large voltage is applied. Here we use gated tunnel transistors to study resonant electron tunnelling through the localised states in few atomic-layer hBN barriers sandwiched between two monolayer graphene electrodes. The measurements are used to determine the energy, linewidth, tunnelling transmission probability, and depth within the barrier of more than 50 distinct localised states. A three-step process of electron percolation through two spatially separated localised states is also investigated.
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Submitted 14 December, 2018; v1 submitted 2 October, 2018;
originally announced October 2018.
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Sensitive detection of photoexcited carriers by resonant tunneling through a single quantum dot
Authors:
E. E. Vdovin,
O. Makarovsky,
A. Patane,
L. Eaves,
Yu. N. Khanin
Abstract:
We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes lowers the electrostatic energy of the quantum dot state and switches the current carrying channel from fully open to fully closed with a high on/o…
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We show that the resonant tunnel current through a single energy level of an individual quantum dot within an ensemble of dots is strongly sensitive to photoexcited holes that become bound in the close vicinity of the dot. The presence of these holes lowers the electrostatic energy of the quantum dot state and switches the current carrying channel from fully open to fully closed with a high on/off ratio (> 50). The device can be reset by means of a bias voltage pulse. These properties are of interest for charge sensitive photon counting devices.
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Submitted 9 July, 2009;
originally announced July 2009.
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Anisotropic magnetic field dependence of many-body enhanced electron tunnelling through a quantum dot
Authors:
E. E. Vdovin,
Yu. N. Khanin,
O. Makarovsky,
A. Patane,
L. Eaves,
M. Henini,
C. J. Mellor,
K. A. Benedict,
R. Airey
Abstract:
We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the…
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We investigate the effect of an applied magnetic field on resonant tunneling of electrons through the bound states of self-assembled InAs quantum dots (QDs) embedded within an (AlGa)As tunnel barrier. At low temperatures (no more than 2 K), a magnetic field B applied either parallel or perpendicular to the direction of current flow causes a significant enhancement of the tunnel current. For the latter field configuration, we observe a strong angular anisotropy of the enhanced current when B is rotated in the plane of the quantum dot layer. We attribute this behavior to the effect of the lowered symmetry of the QD eigenfunctions on the electron-electron interaction.
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Submitted 23 March, 2007;
originally announced March 2007.
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Spin splitting of X-related donor impurity states in an AlAs barrier
Authors:
E. E. Vdovin,
Yu. N. Khanin,
L. Eaves,
M. Henini,
G. Hill
Abstract:
We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the effective Zeeman spin splitting factors of the impurity ground state to be g$_{I}$= 2.2 $\pm $ 0.1. We also investigate the spatial form of the electron wave function of the donor ground state, which is anis…
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We use magnetotunneling spectroscopy to observe the spin splitting of the ground state of an X-valley-related Si-donor impurity in an AlAs barrier. We determine the absolute magnitude of the effective Zeeman spin splitting factors of the impurity ground state to be g$_{I}$= 2.2 $\pm $ 0.1. We also investigate the spatial form of the electron wave function of the donor ground state, which is anisotropic in the growth plane.
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Submitted 10 February, 2005;
originally announced February 2005.
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Spatial map** of the electron eigenfunctions in InAs self-assembled quantum dots by magnetotunneling
Authors:
E. E. Vdovin,
Yu. N. Khanin,
A. V. Veretennikov,
A. Levin,
A. Patane,
Yu. V. Dubrovskii,
L. Eaves,
P. C. Main,
M. Henini,
G. Hill
Abstract:
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states.
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the elliptical symmetry of the ground state and the characteristic lobes of the higher energy states.
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Submitted 29 June, 2001;
originally announced June 2001.
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Nonlinear electron transport in normally pinched-off quantum wire
Authors:
K. S. Novoselov,
Yu. V. Dubrovskii,
V. A. Sablikov,
D. Yu. Ivanov,
E. E. Vdovin,
Yu. N. Khanin,
V. A. Tulin,
D. Esteve,
S. Beaumont
Abstract:
Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet etching. At certain critical source-drain voltage the samples exhibited a step rise of the conductance. The differential conductance of the open wires was noticeab…
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Nonlinear electron transport in normally pinched-off quantum wires was studied. The wires were fabricated from AlGaAs/GaAs heterostructures with high-mobility two-dimensional electron gas by electron beam lithography and following wet etching. At certain critical source-drain voltage the samples exhibited a step rise of the conductance. The differential conductance of the open wires was noticeably lower than e^2/h as far as only part of the source-drain voltage dropped between source contact and saddle-point of the potential relief along the wire. The latter limited the electron flow injected to the wire. At high enough source-drain voltages the decrease of the differential conductance due to the real space transfer of electrons from the wire in GaAs to the doped AlGaAs layer was found. In this regime the sign of differential magnetoconductance was changed with reversing the direction of the current in the wire or the magnetic field, whet the magnetic field lies in the heterostructure plane and is directed perpendicular to the current. The dependence of the differential conductance on the magnetic field and its direction indicated that the real space transfer events were mainly mediated by the interface scattering.
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Submitted 31 March, 2000;
originally announced March 2000.
