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Pulse Profile Modelling of Thermonuclear Burst Oscillations III : Constraining the properties of XTE J1814-338
Authors:
Yves Kini,
Tuomo Salmi,
Serena Vinciguerra,
Anna L. Watts,
Anna Bilous,
Duncan K. Galloway,
Emma van der Wateren,
Guru Partap Khalsa,
Slavko Bogdanov,
Johannes Buchner,
Valery Suleimanov
Abstract:
Pulse profile modelling (PPM) is a comprehensive relativistic ray-tracing technique employed to determine the properties of neutron stars. In this study, we apply this technique to the Type I X-ray burster and accretion-powered millisecond pulsar XTE J1814-338, extracting its fundamental properties using PPM of its thermonuclear burst oscillations. Using data from its 2003 outburst, and a single u…
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Pulse profile modelling (PPM) is a comprehensive relativistic ray-tracing technique employed to determine the properties of neutron stars. In this study, we apply this technique to the Type I X-ray burster and accretion-powered millisecond pulsar XTE J1814-338, extracting its fundamental properties using PPM of its thermonuclear burst oscillations. Using data from its 2003 outburst, and a single uniform temperature hot spot model, we infer XTE J1814-338 to be located at a distance of $7.2^{+0.3}_{-0.4}$ kpc, with a mass of $1.21^{+0.05}_{-0.05}$ M$_\odot$ and an equatorial radius of $7.0^{+0.4}_{-0.4}$ km. Our results also offer insight into the time evolution of the hot spot but point to some potential shortcomings of the single uniform temperature hot spot model. We explore the implications of this result, including what we can learn about thermonuclear burst oscillation mechanisms and the importance of modelling the accretion contribution to the emission during the burst.
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Submitted 17 May, 2024;
originally announced May 2024.
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Optical Control of Ferroaxial Order
Authors:
Zhiren He,
Guru Khalsa
Abstract:
Materials that exhibit ferroaxial order hold potential for novel multiferroic applications. However, in pure ferroaxials, domains are not directly coupled to stress or static electric field due to their symmetry, limiting the ability to pole and switch between domains -- features required for real-world applications. Here we propose a general approach to selectively condense and switch between fer…
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Materials that exhibit ferroaxial order hold potential for novel multiferroic applications. However, in pure ferroaxials, domains are not directly coupled to stress or static electric field due to their symmetry, limiting the ability to pole and switch between domains -- features required for real-world applications. Here we propose a general approach to selectively condense and switch between ferroaxial domains with light. We show that circularly polarized light pulses on resonance with infrared-active phonons manifest helicity-dependent control over ferroaxial domains. Nonlinear contributions to the lattice polarizability play an essential role in this phenomenon. We illustrate the feasibility of our approach using first-principle calculations and dynamical simulations for the archetypal ferroaxial material RbFe(MoO$_4$)$_2$. Our results are discussed in the context of future pump-probe optical experiments, where polarization, carrier frequency, and fluence threshold are explored.
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Submitted 14 May, 2024; v1 submitted 29 November, 2023;
originally announced November 2023.
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LLRF System Considerations for a Compact, Commercial C-band Accelerator using the AMD Xilinx RF-SoC
Authors:
J. Einstein-Curtis,
J. Edelen,
B. Gur,
M. Henderson,
G. Khalsa,
M. Kilpatrick,
R. O'Rourke,
R. Augustsson,
A. Diego,
A. Smirnov,
S. Thielk,
B. Hong,
Z. Li,
C. Liu,
J. Merrick,
E. Nanni,
L. Ruckman,
S. Tantawi,
F. Zuo
Abstract:
This work describes the LLRF and control system in use for a novel accelerator structure developed for a compact design operating in C-band developed by SLAC, with collaboration from RadiaBeam and RadiaSoft. This design is a pulsed RF/pulsed beam system that only provides minimal monitoring for control of each two-cavity pair. Available signals include only a forward and reflected signal for each…
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This work describes the LLRF and control system in use for a novel accelerator structure developed for a compact design operating in C-band developed by SLAC, with collaboration from RadiaBeam and RadiaSoft. This design is a pulsed RF/pulsed beam system that only provides minimal monitoring for control of each two-cavity pair. Available signals include only a forward and reflected signal for each pair; such a design requires careful consideration of calibration and power-on routines, as well an understanding of how to correct for disturbances caused by the entire RF signal chain, including a new SSA, klystron, and distribution system. An AMD ** for larger-volume manufacturing.
This material is based upon work supported by the Defense Advanced Research Projects Agency under Contract Numbers 140D0423C0006 and 140D0423C0007. The views, opinions, and/or findings expressed are those of the author(s) and should not be interpreted as representing the official views or policies of the Department of Defense or the U.S. Government.
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Submitted 9 October, 2023; v1 submitted 6 October, 2023;
originally announced October 2023.
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Phonon-Mediated Third-Harmonic Generation in Diamond
Authors:
Jiaoyang Zheng,
Guru Khalsa,
Jeffrey Moses
Abstract:
We observe strongly anisotropic third-harmonic generation mediated by resonant sum-frequency driving of Raman phonons with THz light, extending light-induced dual control of structural and optical properties in solids. Either strong enhancement or strong suppression of the third harmonic covering six orders of magnitude can be achieved, a result of interference between purely electronic and phonon…
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We observe strongly anisotropic third-harmonic generation mediated by resonant sum-frequency driving of Raman phonons with THz light, extending light-induced dual control of structural and optical properties in solids. Either strong enhancement or strong suppression of the third harmonic covering six orders of magnitude can be achieved, a result of interference between purely electronic and phonon-mediated contributions to the polarization field. These findings enrich capabilities for tailoring nonlinear optics via phononics and for the spectroscopy of crystalline structural dynamics.
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Submitted 2 May, 2024; v1 submitted 31 August, 2023;
originally announced September 2023.
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Coherent control of the translational and point group symmetries of crystals with light
Authors:
Guru Khalsa,
Jeffrey Z. Kaaret,
Nicole A. Benedek
Abstract:
We use theory and first-principles calculations to explore mechanisms for control of the translational and point group symmetries of crystals in ultrafast optical experiments. We focus in particular on mechanisms that exploit anharmonic (biquadratic) lattice couplings between a driven infrared-active phonon mode and other modes at arbitrary wave vector, which are always allowed by symmetry in any…
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We use theory and first-principles calculations to explore mechanisms for control of the translational and point group symmetries of crystals in ultrafast optical experiments. We focus in particular on mechanisms that exploit anharmonic (biquadratic) lattice couplings between a driven infrared-active phonon mode and other modes at arbitrary wave vector, which are always allowed by symmetry in any space group. We use Floquet theory to develop a general phase diagram depicting the various dynamical regimes accessible to materials, with simulated dynamics to illustrate how the biquadratic coupling changes materials structure depending on both extrinsic factors (light pulse characteristics) and intrinsic materials parameters (phonon frequencies, phonon coupling strengths). We use our phase diagram, in conjunction with density functional theory calculations, both to suggest experiments to reveal hidden structural order in perovskite KTaO$_3$, and to provide additional insights into recently reported experiments on SrTiO$_3$ and LiNbO$_3$.
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Submitted 27 April, 2023;
originally announced April 2023.
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Picosecond volume expansion drives a later-time insulator-metal transition in a nano-textured Mott Insulator
Authors:
Anita Verma,
Denis Golež,
Oleg Yu. Gorobtsov,
Kelson Kaj,
Ryan Russell,
Jeffrey Z. Kaaret,
Erik Lamb,
Guru Khalsa,
Hari P Nair,
Yifei Sun,
Ryan Bouck,
Nathaniel Schreiber,
Jacob P. Ruf,
Varun Ramaprasad,
Yuya Kubota,
Tadashi Togashi,
Vladimir A. Stoica,
Hari Padmanabhan,
John W. Freeland,
Nicole A. Benedek,
Oleg Shpyrko,
John W. Harter,
Richard D. Averitt,
Darrell G. Schlom,
Kyle M. Shen
, et al. (2 additional authors not shown)
Abstract:
Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated phonons (10s of femtoseconds to few picoseconds), which is possible with short-pulse photoexcitation. Yet, in many Mott insulators, the electronic transition is ac…
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Technology moves towards ever faster switching between different electronic and magnetic states of matter. Manipulating properties at terahertz rates requires accessing the intrinsic timescales of electrons (femtoseconds) and associated phonons (10s of femtoseconds to few picoseconds), which is possible with short-pulse photoexcitation. Yet, in many Mott insulators, the electronic transition is accompanied by the nucleation and growth of percolating domains of the changed lattice structure, leading to empirical time scales dominated by slow coarsening dynamics. Here, we use time-resolved X-ray diffraction and reflectivity measurements to investigate the photoinduced insulator-to-metal transition in an epitaxially strained thin film Mott insulator Ca2RuO4. The dynamical transition occurs without observable domain formation and coarsening effects, allowing the study of the intrinsic electronic and lattice dynamics. Above a fluence threshold, the initial electronic excitation drives a fast lattice rearrangement, followed by a slower electronic evolution into a metastable non-equilibrium state. Microscopic calculations based on time-dependent dynamical mean-field theory and semiclassical lattice dynamics within a recently published equilibrium energy landscape picture explain the threshold-behavior and elucidate the delayed onset of the electronic phase transition in terms of kinematic constraints on recombination. Analysis of satellite scattering peaks indicates the persistence of a strain-induced nano-texture in the photoexcited film. This work highlights the importance of combined electronic and structural studies to unravel the physics of dynamic transitions and elucidates the role of strain in tuning the timescales of photoinduced processes.
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Submitted 6 April, 2023; v1 submitted 4 April, 2023;
originally announced April 2023.
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Tight-Binding Bandstructure of $β-$ and $α-$ phase Ga$_2$O$_3$ and Al$_2$O$_3$
Authors:
Yifan,
Zhang,
Mengren,
Liu,
Guru Khalsa,
Debdeep Jena
Abstract:
Rapid design and development of the emergent ultra-wide bandgap semiconductors Ga$_2$O$_3$ and Al$_2$O$_3$ requires a compact model of their electronic structures, accurate over the broad energy range accessed in future high-field, high-frequency, and high-temperature electronics and visible and ultraviolet photonics. A minimal tight-binding model is developed to reproduce the first-principles ele…
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Rapid design and development of the emergent ultra-wide bandgap semiconductors Ga$_2$O$_3$ and Al$_2$O$_3$ requires a compact model of their electronic structures, accurate over the broad energy range accessed in future high-field, high-frequency, and high-temperature electronics and visible and ultraviolet photonics. A minimal tight-binding model is developed to reproduce the first-principles electronic structures of the $β-$ and $α-$ phases of Ga$_2$O$_3$ and Al$_2$O$_3$ throughout their reciprocal spaces. Accurately reproducing the bandgap, orbital character, and effective mass and high-energy features of the conduction band, this compact model will assist in the investigation and design of the electrical and optical properties of bulk materials, devices, and quantum confined heterostructures.
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Submitted 6 November, 2021;
originally announced November 2021.
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A Strategy to Identify Materials Exhibiting a Large Nonlinear Phononics Response: Tuning the Ultrafast Structural Response of LaAlO$_3$ with Pressure
Authors:
Jeffrey Z. Kaaret,
Guru Khalsa,
Nicole A. Benedek
Abstract:
We use theory and first-principles calculations to investigate how structural changes induced by ultrafast optical excitation of infrared-active phonons change with hydrostatic pressure in LaAlO$_3$. Our calculations show that the observed structural changes are sensitive to pressure, with the largest changes occurring at pressures near the boundary between the cubic perovskite and rhombohedral ph…
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We use theory and first-principles calculations to investigate how structural changes induced by ultrafast optical excitation of infrared-active phonons change with hydrostatic pressure in LaAlO$_3$. Our calculations show that the observed structural changes are sensitive to pressure, with the largest changes occurring at pressures near the boundary between the cubic perovskite and rhombohedral phases. We rationalize our findings by defining a figure of merit that depends only on intrinsic materials quantities, and show that the peak response near the phase boundary is dictated by different microscopic materials properties depending on the particular phonon mode being excited. Our work demonstrates how it is possible to systematically identify materials that may exhibit particularly large changes in structure and properties due to optical excitation of infrared-active phonons.
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Submitted 27 September, 2021;
originally announced September 2021.
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Spin-Phonon Interaction in Yttrium Iron Garnet
Authors:
Kevin S. Olsson,
Jeongheon Choe,
Martin Rodriguez-Vega,
Guru Khalsa,
Nicole A. Benedek,
Bin Fang,
Jianshi Zhou,
Gregory A. Fiete,
Xiaoqin Li
Abstract:
Spin-phonon interaction is an important channel for spin and energy relaxation in magnetic insulators. Understanding this interaction is critical for develo** magnetic insulator-based spintronic devices. Quantifying this interaction in yttrium iron garnet (YIG), one of the most extensively investigated magnetic insulators, remains challenging because of the large number of atoms in a unit cell.…
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Spin-phonon interaction is an important channel for spin and energy relaxation in magnetic insulators. Understanding this interaction is critical for develo** magnetic insulator-based spintronic devices. Quantifying this interaction in yttrium iron garnet (YIG), one of the most extensively investigated magnetic insulators, remains challenging because of the large number of atoms in a unit cell. Here, we report temperature-dependent and polarization-resolved Raman measurements in a YIG bulk crystal. We first classify the phonon modes based on their symmetry. We then develop a modified mean-field theory and define a symmetry-adapted parameter to quantify spin-phonon interaction in a phonon-mode specific way for the first time in YIG. Based on this improved mean-field theory, we discover a positive correlation between the spin-phonon interaction strength and the phonon frequency.
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Submitted 16 March, 2021;
originally announced March 2021.
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Momentum-resolved electronic band structure and offsets in an epitaxial NbN/GaN superconductor/semiconductor heterojunction
Authors:
Tianlun Yu,
John Wright,
Guru Khalsa,
Betül Pamuk,
Celesta S. Chang,
Yury Matveyev,
Thorsten Schmitt,
Donglai Feng,
David Muller,
Grace Xing,
Debdeep Jena,
Vladimir N. Strocov
Abstract:
The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituen…
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The electronic structure of heterointerfaces play a pivotal role in their device functionality. Recently, highly crystalline ultrathin films of superconducting NbN have been integrated by molecular beam epitaxy with the semiconducting GaN. We use soft X-ray angle-resolved photoelectron spectroscopy to directly measure the momentum-resolved electronic band structures for both NbN and GaN constituents of this Schottky heterointerface, and determine their momentum-dependent interfacial band offset as well as the band-bending profile into GaN. We find, in particular, that the Fermi states in NbN are aligned against the band gap in GaN, which excludes any significant electronic cross-talk of the superconducting states in NbN through the interface to GaN. We support the experimental findings with first-principles calculations for bulk NbN and GaN. The Schottky barrier height obtained from photoemission is corroborated by electronic transport and optical measurements. The momentum-resolved understanding of electronic properties elucidated by the combined materials advances and experimental methods in our work opens up new possibilities in systems where interfacial states play a defining role.
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Submitted 11 March, 2021;
originally announced March 2021.
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Ultrafast control of material optical properties via the infrared resonant Raman effect
Authors:
Guru Khalsa,
Nicole A. Benedek,
Jeffrey Moses
Abstract:
The Raman effect -- inelastic scattering of light by lattice vibrations (phonons) -- produces an optical response closely tied to a material's crystal structure. Here we show that resonant optical excitation of IR and Raman phonons gives rise to a Raman scattering effect that can induce giant shifts to the refractive index and induce new optical constants that are forbidden in the equilibrium crys…
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The Raman effect -- inelastic scattering of light by lattice vibrations (phonons) -- produces an optical response closely tied to a material's crystal structure. Here we show that resonant optical excitation of IR and Raman phonons gives rise to a Raman scattering effect that can induce giant shifts to the refractive index and induce new optical constants that are forbidden in the equilibrium crystal structure. We complete the description of light-matter interactions mediated by coupled IR and Raman phonons in crystalline insulators -- currently the focus of numerous experiments aiming to dynamically control material properties -- by including a forgotten pathway through the nonlinear lattice polarizability. Our work expands the toolset for control and development of new optical technologies by revealing that the absorption of light within the terahertz gap can enable control of optical properties of materials over a broad frequency range.
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Submitted 17 May, 2021; v1 submitted 3 November, 2020;
originally announced November 2020.
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Majorana Zero Modes in Cylindrical Semiconductor Quantum Wire
Authors:
Chao Lei,
Guru Khalsa,
Jiangfeng Du,
Allan H. MacDonald
Abstract:
We study Majorana zero modes properties in cylindrical cross-section semiconductor quantum wires based on the $k \cdot p$ theory and a discretized lattice model. Within this model, the influence of disorder potentials in the wire and amplitude and phase fluctuations of the superconducting order-parameter are discussed. We find that for typical wire geometries, pairing potentials, and spin-orbit co…
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We study Majorana zero modes properties in cylindrical cross-section semiconductor quantum wires based on the $k \cdot p$ theory and a discretized lattice model. Within this model, the influence of disorder potentials in the wire and amplitude and phase fluctuations of the superconducting order-parameter are discussed. We find that for typical wire geometries, pairing potentials, and spin-orbit coupling strengths, coupling between quasi-one-dimensional sub-bands is weak, low-energy quasiparticles near the Fermi energy are nearly completely spin-polarized, and the number of electrons in the active sub-bands of topological states is small.
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Submitted 26 September, 2020;
originally announced September 2020.
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An unexplored MBE growth mode reveals new properties of superconducting NbN
Authors:
John Wright,
Celesta Chang,
Dacen Waters,
Felix Lüpke,
Lucy Raymond,
Rosalyn Koscica,
Guru Khalsa,
Randall Feenstra,
David Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal m…
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Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are cooled, and the high material quality allows the first imaging of Abrikosov vortex lattices in this superconductor.
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Submitted 23 December, 2020; v1 submitted 21 August, 2020;
originally announced August 2020.
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The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
Authors:
Debdeep Jena,
Ryan Page,
Joseph Casamento,
Phillip Dang,
Jashan Singhal,
Zexuan Zhang,
John Wright,
Guru Khalsa,
Yong** Cho,
Huili Grace Xing
Abstract:
The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered…
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The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semiconductor NbN/GaN heterojunctions. This article reviews the fascinating and emerging physics and science of these new nitride materials. It also discusses their potential applications in future generations of devices that take advantage of the photonic and electronic devices eco-system based on transistors, light-emitting diodes, and lasers that have already been created by the nitride semiconductors.
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Submitted 18 May, 2019;
originally announced May 2019.
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Neuromorphic Computing through Time-Multiplexing with a Spin-Torque Nano-Oscillator
Authors:
M. Riou,
F. Abreu Araujo,
J. Torrejon,
S. Tsunegi,
G. Khalsa,
D. Querlioz,
P. Bortolotti,
V. Cros,
K. Yakushiji,
A. Fukushima,
H. Kubota,
S. Yuasa,
M. D. Stiles,
J. Grollier
Abstract:
Fabricating powerful neuromorphic chips the size of a thumb requires miniaturizing their basic units: synapses and neurons. The challenge for neurons is to scale them down to submicrometer diameters while maintaining the properties that allow for reliable information processing: high signal to noise ratio, endurance, stability, reproducibility. In this work, we show that compact spin-torque nano-o…
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Fabricating powerful neuromorphic chips the size of a thumb requires miniaturizing their basic units: synapses and neurons. The challenge for neurons is to scale them down to submicrometer diameters while maintaining the properties that allow for reliable information processing: high signal to noise ratio, endurance, stability, reproducibility. In this work, we show that compact spin-torque nano-oscillators can naturally implement such neurons, and quantify their ability to realize an actual cognitive task. In particular, we show that they can naturally implement reservoir computing with high performance and detail the recipes for this capability.
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Submitted 25 April, 2019;
originally announced April 2019.
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Evolution of superconductivity in ultrathin NbS2
Authors:
Rusen Yan,
Guru Khalsa,
Brian T. Schaefer,
Alexander Jarjour,
Sergei Rouvimov,
Katja C. Nowack,
Huili G. Xing,
Debdeep Jena
Abstract:
We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 in its normal state to be a p-type metal with hole mobility of 1-3 cm2/Vs. The superconducting transition temperature is found to decrease with thickness. We find that the suppression of superconductivity is due to disorder re…
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We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 in its normal state to be a p-type metal with hole mobility of 1-3 cm2/Vs. The superconducting transition temperature is found to decrease with thickness. We find that the suppression of superconductivity is due to disorder resulting from the incorporation of atmospheric oxygen and a reduced hole density. Cross-section transmission electron microscope (TEM) imaging reveals a chemical change of NbS2 in ambient conditions, resulting in the formation of amorphous oxide layers sandwiching crystalline layered NbS2. Though few-nm-thick 2H-NbS2 completely converts to amorphous oxide in ambient conditions, PMMA encapsulation prevents further chemical change and preserves superconductivity.
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Submitted 16 March, 2018;
originally announced March 2018.
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Ultrafast optically induced ferromagnetic/anti-ferromagnetic phase transition in GdTiO$_3$ from first principles
Authors:
Guru Khalsa,
Nicole A. Benedek
Abstract:
Epitaxial strain and chemical substitution have been the workhorses of functional materials design. These static techniques have shown immense success in controlling properties in complex oxides through the tuning of subtle structural distortions. Recently, an approach based on the excitation of an infrared active phonon with intense mid-infrared light has created an opportunity for dynamical cont…
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Epitaxial strain and chemical substitution have been the workhorses of functional materials design. These static techniques have shown immense success in controlling properties in complex oxides through the tuning of subtle structural distortions. Recently, an approach based on the excitation of an infrared active phonon with intense mid-infrared light has created an opportunity for dynamical control of structure through special nonlinear coupling to Raman phonons. We use first-principles techniques to show that this approach can dynamically induce a magnetic phase transition from the ferromagnetic ground state to a hidden antiferromagnetic phase in the rare earth titanate GdTiO$_3$ for realistic experimental parameters. We show that a combination of a Jahn-Teller distortion, Gd displacement, and infrared phonon motion dominate this phase transition with little effect from the octahedral rotations, contrary to conventional wisdom.
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Submitted 4 March, 2018;
originally announced March 2018.
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Neuromorphic computing with nanoscale spintronic oscillators
Authors:
Jacob Torrejon,
Mathieu Riou,
Flavio Abreu Araujo,
Sumito Tsunegi,
Guru Khalsa,
Damien Querlioz,
Paolo Bortolotti,
Vincent Cros,
Akio Fukushima,
Hitoshi Kubota,
Shinji Yuasa,
M. D. Stiles,
Julie Grollier
Abstract:
Neurons in the brain behave as non-linear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behavior to realize high density, low power neuromorphic computing will require huge numbers of nanoscale non-linear oscillators. Indeed, a simple estimation indicates that, in order to fit a hundred million oscillators organized in a two-dimensio…
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Neurons in the brain behave as non-linear oscillators, which develop rhythmic activity and interact to process information. Taking inspiration from this behavior to realize high density, low power neuromorphic computing will require huge numbers of nanoscale non-linear oscillators. Indeed, a simple estimation indicates that, in order to fit a hundred million oscillators organized in a two-dimensional array inside a chip the size of a thumb, their lateral dimensions must be smaller than one micrometer. However, despite multiple theoretical proposals, there is no proof of concept today of neuromorphic computing with nano-oscillators. Indeed, nanoscale devices tend to be noisy and to lack the stability required to process data in a reliable way. Here, we show experimentally that a nanoscale spintronic oscillator can achieve spoken digit recognition with accuracies similar to state of the art neural networks. We pinpoint the regime of magnetization dynamics leading to highest performance. These results, combined with the exceptional ability of these spintronic oscillators to interact together, their long lifetime, and low energy consumption, open the path to fast, parallel, on-chip computation based on networks of oscillators.
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Submitted 14 April, 2017; v1 submitted 25 January, 2017;
originally announced January 2017.
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Spatially inhomogeneous electron state deep in the extreme quantum limit of strontium titanate
Authors:
Anand Bhattacharya,
Brian Skinner,
Guru Khalsa,
Alexey V. Suslov
Abstract:
When an electronic system is subjected to a sufficiently strong magnetic field that the cyclotron energy is much larger than the Fermi energy, the system enters the "extreme quantum limit" (EQL) and becomes susceptible to a number of instabilities. Bringing a three-dimensional electronic system deeply into the EQL can be difficult, however, since it requires a small Fermi energy, large magnetic fi…
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When an electronic system is subjected to a sufficiently strong magnetic field that the cyclotron energy is much larger than the Fermi energy, the system enters the "extreme quantum limit" (EQL) and becomes susceptible to a number of instabilities. Bringing a three-dimensional electronic system deeply into the EQL can be difficult, however, since it requires a small Fermi energy, large magnetic field, and low disorder. Here we present an experimental study of the EQL in lightly-doped single crystals of strontium titanate, which remain good bulk conductors down to very low temperatures and high magnetic fields. Our experiments probe deeply into the regime where theory has long predicted electron-electron interactions to drive the system into a charge density wave or Wigner crystal state. A number of interesting features arise in the transport in this regime, including a striking re-entrant nonlinearity in the current-voltage characteristics and a saturation of the quantum-limiting field at low carrier density. We discuss these features in the context of possible correlated electron states, and present an alternative picture based on magnetic-field induced puddling of electrons.
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Submitted 20 July, 2016;
originally announced July 2016.
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Critical current and linewidth reduction in spin-torque nano-oscillators by delayed self-injection
Authors:
Guru Khalsa,
M. D. Stiles,
J. Grollier
Abstract:
Based on theoretical models, the dynamics of spin-torque nano-oscillators can be substantially modified by re-injecting the emitted signal to the input of the oscillator after some delay. Numerical simulations for vortex magnetic tunnel junctions show that with reasonable parameters this approach can decrease critical currents as much as 25 % and linewidths by a factor of 4. Analytical calculation…
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Based on theoretical models, the dynamics of spin-torque nano-oscillators can be substantially modified by re-injecting the emitted signal to the input of the oscillator after some delay. Numerical simulations for vortex magnetic tunnel junctions show that with reasonable parameters this approach can decrease critical currents as much as 25 % and linewidths by a factor of 4. Analytical calculations, which agree well with simulations, demonstrate that these results can be generalized to any kind of spin-torque oscillator.
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Submitted 15 May, 2015;
originally announced May 2015.
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Weak Localization, Spin Relaxation, and Spin-Diffusion: The Crossover Between Weak and Strong Rashba Coupling Limits
Authors:
Yasufumi Araki,
Guru Khalsa,
Allan H. MacDonald
Abstract:
Disorder scattering and spin-orbit coupling are together responsible for the diffusion and relaxation of spin-density in time-reversal invariant systems. We study spin-relaxation and diffusion in a two-dimensional electron gas with Rashba spin-orbit coupling and spin-independent disorder, focusing on the role of Rashba spin-orbit coupling in transport. Spin-orbit coupling contributes to spin relax…
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Disorder scattering and spin-orbit coupling are together responsible for the diffusion and relaxation of spin-density in time-reversal invariant systems. We study spin-relaxation and diffusion in a two-dimensional electron gas with Rashba spin-orbit coupling and spin-independent disorder, focusing on the role of Rashba spin-orbit coupling in transport. Spin-orbit coupling contributes to spin relaxation, transforming the quantum interference contribution to conductivity from a negative weak localization (WL) correction to a positive weak anti-localization (WAL) correction. The importance of spin channel mixing in transport is largest in the regime where the Bloch state energy uncertainty $\hbar/τ$ and the Rashba spin-orbit splitting $Δ_\mathrm{SO}$ are comparable. We find that as a consequence of this spin channel mixing, the WL-WAL crossover is non-monotonic in this intermediate regime, and use our results to address recent experimental studies of transport at two-dimensional oxide interfaces.
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Submitted 11 June, 2014; v1 submitted 10 June, 2014;
originally announced June 2014.
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Optical conductivity of the $t_{2g}$ two-dimensional electron gas
Authors:
Ming Xie,
Guru Khalsa,
A. H. MacDonald
Abstract:
Motivated by recent interest in perovskite surfaces and heterostructures, we present an analysis of the Kubo conductivity of a two-dimensional electron gas (2DEG) formed in the $t_{2g}$ bands of an oxide with perovskite structure. We find that when the electric field is polarized in the plane of the 2DEG, the optical conductivity is dominated by nearly independent Drude contributions from two-dime…
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Motivated by recent interest in perovskite surfaces and heterostructures, we present an analysis of the Kubo conductivity of a two-dimensional electron gas (2DEG) formed in the $t_{2g}$ bands of an oxide with perovskite structure. We find that when the electric field is polarized in the plane of the 2DEG, the optical conductivity is dominated by nearly independent Drude contributions from two-dimensional subband Fermi surfaces, whereas for perpendicular-to-plane polarization it has strong intersubband features. Our analysis suggests that perpendicular-to-plane optical conductivity studies may help advance understanding of the interplay between lattice distortions and electron-electron interactions in complex oxide 2DEG quantum confinement physics.
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Submitted 5 August, 2013;
originally announced August 2013.
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Shubnikov-de Haas effect in low electron density SrTiO3: Conduction band edge of SrTiO3 redux
Authors:
S James Allen,
Bharat Jalan,
SungBin Lee,
Daniel G. Ouellette,
Guru Khalsa,
Jan Jaroszynski,
Susanne Stemmer,
Allan H. MacDonald
Abstract:
The Shubnikov-de Haas effect is used to explore the conduction band edge of high mobility SrTiO3 films doped with La. The results largely confirm the earlier measurements by Uwe et al. [Jap. J. Appl. Phys. 24, Suppl. 24-2, 335 (1985)]. The band edge dispersion differs significantly from the predictions of ab initio electronic structure theory.
The Shubnikov-de Haas effect is used to explore the conduction band edge of high mobility SrTiO3 films doped with La. The results largely confirm the earlier measurements by Uwe et al. [Jap. J. Appl. Phys. 24, Suppl. 24-2, 335 (1985)]. The band edge dispersion differs significantly from the predictions of ab initio electronic structure theory.
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Submitted 29 April, 2013;
originally announced April 2013.
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Theory of t2g electron-gas Rashba interactions
Authors:
Guru Khalsa,
Byounghak Lee,
A. H. MacDonald
Abstract:
The spin-degeneracy of Bloch bands in a crystal can be lifted when spin-orbit (SO) coupling is present and inversion symmetry is absent. In two-dimensional electron systems (2DES) spin-degeneracy is lifted by Rashba interaction terms - symmetry invariants that are scalar products of spin and orbital axial vectors. Rashba interactions are symmetry allowed whenever a 2DES is not invariant under refl…
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The spin-degeneracy of Bloch bands in a crystal can be lifted when spin-orbit (SO) coupling is present and inversion symmetry is absent. In two-dimensional electron systems (2DES) spin-degeneracy is lifted by Rashba interaction terms - symmetry invariants that are scalar products of spin and orbital axial vectors. Rashba interactions are symmetry allowed whenever a 2DES is not invariant under reflections through the plane it occupies. In this paper, we use a tight-binding model informed by ab initio electronic structure calculations to develop a theory of Rashba splitting in the t2g bands of the two- dimensional electron systems formed at cubic perovskite crystal surfaces and interfaces. We find that Rashba splitting in these systems is due to atomic-like on-site SO interactions combined with processes in which t2g electrons change orbital character when they hop between metal sites. These processes are absent in a cubic environment and are due primarily to polar lattice distortions which alter the metal-oxygen-metal bond angle.
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Submitted 13 January, 2013;
originally announced January 2013.
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Theory of the SrTiO3 Surface State Two-Dimensional Electron Gas
Authors:
Guru Khalsa,
A. H. MacDonald
Abstract:
We present a theory of the quasi two-dimensional electron gas (2DEG) systems which appear near the surface of SrTiO$_3$ when a large external electric field attracts carriers to the surface. We find that non-linear and non-local screening by the strongly polarizable SrTiO$_3$ lattice plays an essential role in determining 2DEG properties. The electronic structure always includes weakly bound bulk-…
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We present a theory of the quasi two-dimensional electron gas (2DEG) systems which appear near the surface of SrTiO$_3$ when a large external electric field attracts carriers to the surface. We find that non-linear and non-local screening by the strongly polarizable SrTiO$_3$ lattice plays an essential role in determining 2DEG properties. The electronic structure always includes weakly bound bulk-like bands that extend over many SrTiO$_3$ layers. At 2D carrier-densities exceeding $\sim 10^{14} {\rm cm}^{-2}$ tightly bound bands emerge that are confined within a few layers of the surface.
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Submitted 19 May, 2012;
originally announced May 2012.
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d0 Perovskite-Semiconductor Electronic Structure
Authors:
R. Bistritzer,
G. Khalsa,
A. H. MacDonald
Abstract:
We address the low-energy effective Hamiltonian of electron doped d0 perovskite semiconductors in cubic and tetragonal phases using the k*p method. The Hamiltonian depends on the spin-orbit interaction strength, on the temperature-dependent tetragonal distortion, and on a set of effective-mass parameters whose number is determined by the symmetry of the crystal. We explain how these parameters can…
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We address the low-energy effective Hamiltonian of electron doped d0 perovskite semiconductors in cubic and tetragonal phases using the k*p method. The Hamiltonian depends on the spin-orbit interaction strength, on the temperature-dependent tetragonal distortion, and on a set of effective-mass parameters whose number is determined by the symmetry of the crystal. We explain how these parameters can be extracted from angle resolved photo-emission, Raman spectroscopy, and magneto-transport measurements and estimate their values in SrTiO3.
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Submitted 15 October, 2010;
originally announced October 2010.
