Atomic-scale 3D imaging of individual dopant atoms in a complex oxide
Authors:
K. A. Hunnestad,
C. Hatzoglou,
Z. M. Khalid,
P. E. Vullum,
Z. Yan,
E. Bourret,
A. T. J. van Helvoort,
S. M. Selbach,
D. Meier
Abstract:
A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical do** controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterizati…
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A small percentage of dopant atoms can completely change the physical properties of the host material. For example, chemical do** controls the electronic transport behavior of semiconductors and gives rise to a wide range of emergent electric and magnetic phenomena in oxides. Imaging of individual dopant atoms in lightly doped systems, however, remains a major challenge, hindering characterization of the site-specific effects and local dopant concentrations that determine the atomic-scale physics. Here, we apply atom-probe tomography (APT) to resolve individual Ti atoms in the narrow band gap semiconductor ErMnO3 with a nominal proportion of 0.04 atomic percent. Our 3D imaging measures the Ti concentration at the unit cell level, providing quantitative information about the dopant distribution within the ErMnO3 crystal lattice. High-resolution APT maps reveal the 3D lattice position of individual Ti atoms, showing that they are located within the Mn layers with no signs of clustering or other chemical inhomogeneities. The 3D atomic-scale visualization of individual dopant atoms provides new opportunities for the study of local structure-property relations in complex oxides, representing an important step toward controlling dopant-driven quantum phenomena in next-generation oxide electronics.
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Submitted 30 October, 2021;
originally announced November 2021.
