Showing 1–2 of 2 results for author: Khalatpour, A

Terahertz semiconductor laser source at -12 C

Authors: Ali Khalatpour, Man Chun Tam, Sadhvikas J. Addamane, John Reno, Zbig Wasilewski, Qing Hu

Abstract: Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and t… ▽ More Room temperature operation of Terahertz Quantum Cascade Lasers (THz QCLs) has been a long-pursued goal to realize compact semiconductor THz sources. The progress toward high-temperature operation in THz QCLs has been relatively slow compared to infrared QCLs owing to more significant challenges at THz frequencies. Recently, the maximum operating temperature of THz QCLs was improved to 250 K, and the achievement revitalized hope in the THz community in pursuit of higher temperature operations. In this paper, we report on further improvement in operating temperature to ~261 K (-12 0C) by judiciously optimizing key parameters and discuss the challenges ahead in achieving room temperature operation. △ Less

Submitted 15 November, 2022; originally announced November 2022.

Length Scale Dependence of Periodic Textures for Photoabsorption Enhancement in Ultra-thin Silicon Foils and Thick Wafers

Authors: K Kumar, A Khalatpour, G Liu, J Nogami, N P Kherani

Abstract: In this paper, we simulate a front surface inverted pyramidal grating texture on 2 to 400 micron thick silicon and optimize it to derive maximum photocurrent density from the cell. We identify a one size fits all front grating period of 1000 nm that leads to maximum photo-absorption of normally incident AM1.5g solar spectrum in silicon (configured with a back surface reflector) irrespective of the… ▽ More In this paper, we simulate a front surface inverted pyramidal grating texture on 2 to 400 micron thick silicon and optimize it to derive maximum photocurrent density from the cell. We identify a one size fits all front grating period of 1000 nm that leads to maximum photo-absorption of normally incident AM1.5g solar spectrum in silicon (configured with a back surface reflector) irrespective of the thickness of the crystalline silicon absorbing layer. With the identification of such universally optimized periodicity for the case of an inverted pyramidal grating texture, a common fabrication process can be designed to manufacture high-efficiency devices on crystalline silicon regardless of wafer thickness. In order to validate the results of the simulation, we fabricated high resolution inverted pyramidal textures on a 400 micron thick silicon wafer with electron beam lithography to compare the reflectance from submicron and wavelength scale periodic textures. The experimental reflectance measurements on textures confirm that a 1000 nm period grating texture performs better than a 500 nm period texture in reducing reflectance, in agreement with the simulations. △ Less

Submitted 6 June, 2016; originally announced June 2016.