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Microscopic insights on field induced switching and domain wall motion in orthorhombic ferroelectrics
Authors:
Ruben Khachaturyan,
Yi**g Yang,
Sheng-Han Teng,
Benjamin Udofia,
Markus Stricker,
Anna Grünebohm
Abstract:
Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics.
To study microscopic switching processes we combine ab initio-based molecular dynamics simulations and data science on the prototypical material BaTiO$_3$. We reveal two different field regimes: For moderate field strengths, the switching is dominated by domain wall mo…
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Surprisingly little is known about the microscopic processes that govern ferroelectric switching in orthorhombic ferroelectrics.
To study microscopic switching processes we combine ab initio-based molecular dynamics simulations and data science on the prototypical material BaTiO$_3$. We reveal two different field regimes: For moderate field strengths, the switching is dominated by domain wall motion while a fast bulk-like switching can be induced for large fields. Switching in both field regimes follows a multi-step process via polarization directions perpendicular to the applied field. In the former case, the moving wall is of Bloch character and hosts dipole vortices due to nucleation, growth, and crossing of two dimensional 90$^{\circ}$ domains. In the second case, the local polarization shows a continuous correlated rotation via a an intermediate tetragonal multidomain state.
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Submitted 18 October, 2023;
originally announced October 2023.
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Dynamic stability of nano-scale ferroelectric domains by molecular dynamics modeling
Authors:
Arne J. Klomp,
Ruben Khachaturyan,
Theophilus Wallis,
Anna Grünebohm,
Karsten Albe
Abstract:
Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. In this study we combine atomistic and coarse-grained molecular dynamic simulations to study the domain wall stability in the prototypical ferroelectric BaTiO3. We transfer the discussion of the field-driven nucleation and motion of domain walls to thermally induce…
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Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. In this study we combine atomistic and coarse-grained molecular dynamic simulations to study the domain wall stability in the prototypical ferroelectric BaTiO3. We transfer the discussion of the field-driven nucleation and motion of domain walls to thermally induced modifications of the wall without an external driving force. Our simulations show that domain wall dynamics and stability depend crucially on microscopic thermal fluctuations. Enhanced fluctuations at domain walls may result in the formation of critical nuclei for the permanent shift of the domain wall. If two domain walls are close - put in other words, when domains are small - thermal fluctuations can be sufficient to bring domain walls into contact and lead to the annihilation of small domains. This is even true well below the Curie temperature and when domain walls are initially as far apart as 6 unit cells. Such small domains are, thus, not stable and limit the maximum achievable domain wall density in nanoelectronic devices.
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Submitted 24 June, 2022;
originally announced June 2022.
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Domain Wall Acceleration by Ultrafast Field Application: An Ab Initio-Based Molecular Dynamics Study
Authors:
Ruben Khachaturyan,
Aris Dimou,
Anna Grünebohm
Abstract:
Optimizing ferroelectrics for contemporary high-frequency applications asks for the fundamental understanding of ferroelectric switching and domain wall (DW) motion in ultrafast field pulses while the microscopic understanding of the latter is so far incomplete. To close this gap in knowledge, ab initio-based molecular dynamics simulations are utilized to analyze the dynamics of 180$^\grad# DWs in…
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Optimizing ferroelectrics for contemporary high-frequency applications asks for the fundamental understanding of ferroelectric switching and domain wall (DW) motion in ultrafast field pulses while the microscopic understanding of the latter is so far incomplete. To close this gap in knowledge, ab initio-based molecular dynamics simulations are utilized to analyze the dynamics of 180$^\grad# DWs in the prototypical ferroelectric material BaTiO 3 . How ultrafast field application initially excites the dipoles in the system and how they relax to their steady state via transient negative capacitance are discussed. Excitingly, a giant boost of the DW velocity related to the nonequilibrium switching of local dipoles acting as nucleation centers for the wall movement is found. This boost may allow to tune the local ferroelectric switching rate by the shape of an applied field pulse.
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Submitted 20 April, 2022; v1 submitted 21 September, 2021;
originally announced September 2021.
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Multi-step stochastic mechanism of polarization reversal in orthorhombic ferroelectrics
Authors:
Yuri A. Genenko,
Maohua Zhang,
Ivan S. Vorotiahin,
Ruben Khachaturyan,
Yi-Xuan Liu,
Jia-Wang Li,
Ke Wang,
Jurij Koruza
Abstract:
A stochastic model of electric field-driven polarization reversal in orthorhombic ferroelectrics is advanced, providing a description of their temporal electromechanical response. The theory accounts for all possible parallel and sequential switching events. Application of the model to the simultaneous measurements of polarization and strain kinetics in a lead-free orthorhombic (K,Na)NbO3-based fe…
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A stochastic model of electric field-driven polarization reversal in orthorhombic ferroelectrics is advanced, providing a description of their temporal electromechanical response. The theory accounts for all possible parallel and sequential switching events. Application of the model to the simultaneous measurements of polarization and strain kinetics in a lead-free orthorhombic (K,Na)NbO3-based ferroelectric ceramic over a wide timescale of 7 orders of magnitude allowed identification of preferable polarization switching paths, fractions of individual switching processes, and their activation fields. Particularly, the analysis revealed substantial contributions of coherent non-180° switching events, which do not cause macroscopic strain and thus mimic 180° switching processes.
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Submitted 1 September, 2021;
originally announced September 2021.
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Multi-step stochastic mechanism of polarization reversal in rhombohedral ferroelectrics
Authors:
Yuri A. Genenko,
Ruben Khachaturyan,
Ivan S. Vorotiahin,
Jan Schultheiß,
John E. Daniels,
Anna Grünebohm,
Jurij Koruza
Abstract:
A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of indiv…
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A stochastic model for the field-driven polarization reversal in rhombohedral ferroelectrics is developed, providing a description of their temporal electromechanical response. Application of the model to simultaneous measurements of polarization and strain kinetics in a rhombohedral Pb(Zr,Ti)O3 ceramic over a wide time window allows identification of preferable switching paths, fractions of individual switching processes, and their activation fields. Complementary, the phenomenological Landau-Ginzburg-Devenshire theory is used to analyze the impact of external field and stress on switching barriers showing that residual mechanical stress may promote the fast switching.
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Submitted 3 August, 2020; v1 submitted 10 April, 2020;
originally announced April 2020.
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Stochastic model of dispersive multi-step polarization switching in ferroelectrics due to spatial electric field distribution
Authors:
Ruben Khachaturyan,
Jan Schultheiss,
Jurij Koruza,
Yuri A. Genenko
Abstract:
A stochastic model for polarization switching in tetragonal ferroelectric ceramics is introduced, which includes sequential 90°- and parallel 180°-switching processes and accounts for the dispersion of characteristic switching times due to a nonuniform spatial distribution of the applied field. It presents merging of the recent multistep stochastic mechanism (MSM) with the earlier nucleation limit…
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A stochastic model for polarization switching in tetragonal ferroelectric ceramics is introduced, which includes sequential 90°- and parallel 180°-switching processes and accounts for the dispersion of characteristic switching times due to a nonuniform spatial distribution of the applied field. It presents merging of the recent multistep stochastic mechanism (MSM) with the earlier nucleation limited switching (NLS) and inhomogeneous field mechanism (IFM) models. The new model provides a much better description of simultaneous polarization and strain responses over a wide time window and a deeper insight into the microscopic switching mechanisms, as is exemplarily shown by comparison with measurements on lead zirconate titanate.
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Submitted 26 April, 2019;
originally announced April 2019.
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Stochastic multi-step polarization switching in ferroelectrics
Authors:
Y. A. Genenko,
R. Khachaturyan,
J. Schultheiss,
A. Ossipov,
J. E. Daniels,
J. Koruza
Abstract:
Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a new nucleation and growth multi-step model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180°-switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization…
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Consecutive stochastic 90° polarization switching events, clearly resolved in recent experiments, are described by a new nucleation and growth multi-step model. It extends the classical Kolmogorov-Avrami-Ishibashi approach and includes possible consecutive 90°- and parallel 180°-switching events. The model predicts the results of simultaneous time-resolved macroscopic measurements of polarization and strain, performed on a tetragonal Pb(Zr,Ti)O3 ceramic in a wide range of electric fields over a time domain of five orders of the magnitude. It allows the determination of the fractions of individual switching processes, their characteristic switching times, activation fields, and respective Avrami indices.
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Submitted 9 January, 2018;
originally announced January 2018.
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On the magnetization process of ferromagnetic materials
Authors:
R. Khachaturyan,
V. Mekhitarian
Abstract:
The present article concludes that a ferromagnetic sample could be considered like a paramagnetic system where the role of magnetic moments plays magnetic domains. Based on this conclusion and taking into account presence of an anisotropic field the formula which describes magnetization dependence on the external magnetic field is derived. Expressions for a remanent magnetization and a coercive fo…
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The present article concludes that a ferromagnetic sample could be considered like a paramagnetic system where the role of magnetic moments plays magnetic domains. Based on this conclusion and taking into account presence of an anisotropic field the formula which describes magnetization dependence on the external magnetic field is derived. Expressions for a remanent magnetization and a coercive force are presented. The new parameter to characterize a magnetic stiffness of a material is introduced. A physical expression for a dynamic magnetic susceptibility as a function of material's characteristics, external magnetic field, and a temperature is given.
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Submitted 15 July, 2016; v1 submitted 5 June, 2015;
originally announced June 2015.
