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Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Authors:
Jan Klos,
Jan Tröger,
Jens Keutgen,
Merritt P. Losert,
Helge Riemann,
Nikolay V. Abrosimov,
Joachim Knoch,
Hartmut Bracht,
Susan N. Coppersmith,
Mark Friesen,
Oana Cojocaru-Mirédin,
Lars R. Schreiber,
Dominique Bougeard
Abstract:
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing…
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Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.
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Submitted 30 May, 2024;
originally announced May 2024.
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Intense sulphurization process can lead to superior heterojunction properties in Cu(In,Ga)(S,Se)$_2$ thin-film solar cells
Authors:
Oana Cojocaru-Miredin,
Elaheh Ghorbani,
Mohit Raghuwanshi,
Xiaowei **,
Dipak Pandav,
Jens Keutgen,
Reinhard Schneider,
Dagmar Gerthsen,
Karsten Albe,
Roland Scheer
Abstract:
Sulphurization processes in Cu(In,Ga)Se$_2$ thin-film solar cells has been intensively studied in the last decade as a viable alternative to the existing Ga-grading. The main advantage of using S grading is that by substituting Se with S we will achieve not only an upshift of the conduction-band minimum as done by employing Ga grading, but also a downshift of the valence-band maximum. Several exis…
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Sulphurization processes in Cu(In,Ga)Se$_2$ thin-film solar cells has been intensively studied in the last decade as a viable alternative to the existing Ga-grading. The main advantage of using S grading is that by substituting Se with S we will achieve not only an upshift of the conduction-band minimum as done by employing Ga grading, but also a downshift of the valence-band maximum. Several existing studies stipulate that S is very often inserted in too high concentrations into Cu(In,Ga)Se$_2$ absorber by sulphurization resulting in a deteriorated device performance instead of the expected beneficial effect. However, we demonstrate here that the intense sulphurization process when accompanied by Ga-grading leads to improved electrical properties of the buffer/absorber heterojunction. More exactly, this double grading at the absorber surface leads to strong reduction of the p-do** and hence to a change in the band diagram. This work also proves that the intense sulphurization process is accompanied by strong structural and chemical changes, i.e., by the formation of a S-rich CuIn(S,Se)$_2$ compound at the absorber surface. Finally, all these experimental findings were complemented by ab-initio calculations of the conduction-band and valence-band offsets between absorber and buffer obtained by using density functional theory. Hence, the present work opens up new possibilities for synthesizing Cu(In,Ga)(Se,S)2 solar cells with superior cell performance when using an intense sulphurization process.
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Submitted 27 August, 2021;
originally announced August 2021.
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Solving peak overlaps for proximity histogram analysis of complex interfaces for atom probe tomography data
Authors:
Jens Keutgen,
Andrew J. London,
Oana Cojocaru-Miredin
Abstract:
Atom probe tomography is a powerful tools in investigating nanostructures such as interfaces and nanoparticles in material science. Advanced analysis tools are particularly useful for analyzing these nanostructures characterized very often by curved shapes. However, these tools are very limited for complex materials with non-negligible peak overlaps in their respective mass-to-charge ratio spectra…
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Atom probe tomography is a powerful tools in investigating nanostructures such as interfaces and nanoparticles in material science. Advanced analysis tools are particularly useful for analyzing these nanostructures characterized very often by curved shapes. However, these tools are very limited for complex materials with non-negligible peak overlaps in their respective mass-to-charge ratio spectra. Usually, an analyst solves peak overlaps in the bulk regions but the behavior at interfaces is rarely considered. Therefore, in this work we demonstrate how the proximity histogram generated for a specific interface can be corrected by using the natural abundances of isotopes. This leads to overlap-solved proximity histograms with a resolution of up to 0.1 nm. This work expands on previous work that showed the advantage of a maximum likelihood peak overlap solving. The corrected proximity histograms together with the maximum likelihood peak overlap algorithm were implemented in an user-friendly software suite called EPOSA.
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Submitted 28 May, 2021;
originally announced May 2021.
