Showing 1–10 of 10 results for author: Kersting, B

Potential of WebAssembly for Embedded Systems

Authors: Stefan Wallentowitz, Bastian Kersting, Dan Mihai Dumitriu

Abstract: Application virtual machines provide strong isolation properties and are established in the context of software portability. Those opportunities make them interesting for scalable and secure IoT deployments. WebAssembly is an application virtual machine with origins in web browsers, that is getting rapidly adopted in other domains. The strong and steadily growing ecosystem makes WebAssembly an int… ▽ More Application virtual machines provide strong isolation properties and are established in the context of software portability. Those opportunities make them interesting for scalable and secure IoT deployments. WebAssembly is an application virtual machine with origins in web browsers, that is getting rapidly adopted in other domains. The strong and steadily growing ecosystem makes WebAssembly an interesting candidate for Embedded Systems. This position paper discusses the usage of WebAssembly in Embedded Systems. After introducing the basic concepts of WebAssembly and existing runtime environments, we give an overview of the challenges for the efficient usage of WebAssembly in Embedded Systems. The paper concludes with a real world case study that demonstrates the viability, before giving an outlook on open issues and upcoming work. △ Less

Submitted 15 May, 2024; originally announced May 2024.

Quest for a solution to drift in phase change memory devices

Authors: Benedikt Kersting

Abstract: The goal of this thesis is to gain new insights into the drift phenomenon and identify strategies to mitigate it. An extensive experimental characterization of PCM devices and in particular drift forms the foundation of each chapter. With respect to time-scales, ambient temperature, device dimensions, and combinations thereof, drift is studied under unprecedented conditions. In three studies, diff… ▽ More The goal of this thesis is to gain new insights into the drift phenomenon and identify strategies to mitigate it. An extensive experimental characterization of PCM devices and in particular drift forms the foundation of each chapter. With respect to time-scales, ambient temperature, device dimensions, and combinations thereof, drift is studied under unprecedented conditions. In three studies, different aspects of drift are examined. (1) The origin of structural relaxation: Drift measurements over 9 orders of magnitude in time reveal the onset of relaxation in a melt-quenched state. The data is used to appraise two models, the Gibbs relaxation model and the collective relaxation model. Additionally, a refined version of the collective relaxation model is introduced and the consequences of a limited number of structural defects are discussed. (2) Exploiting nanoscale effects in phase change memories: Scaling devices to ever-smaller dimensions is incentivized by the requirement to achieve higher storage densities and less power consumption. Eventually, confinement and interfacial effects will govern the device characteristics. Anticipating these consequences, the feasibility to use a single element, Antimony, is assessed for the first time. The power efficiency, stability against crystallization, and drift are characterized under different degrees of confinement. (3) State-dependent drift in a projected memory cell: New device concepts are aiming to reduce drift by decoupling the cell resistance from the electronic properties of the amorphous phase. A shunt resistor scaling with the amount of amorphous material is added. Simulations and the drift characteristics of a projected device put the idealized concept to the test. The contact resistance between the phase change material and the shunt resistor is identified as a decisive parameter to achieve the desired device properties. △ Less

Submitted 5 January, 2024; originally announced January 2024.

Comments: PhD thesis

Gradient descent-based programming of analog in-memory computing cores

Authors: Julian Büchel, Athanasios Vasilopoulos, Benedikt Kersting, Frederic Odermatt, Kevin Brew, Injo Ok, Sam Choi, Iqbal Saraf, Victor Chan, Timothy Philip, Nicole Saulnier, Vijay Narayanan, Manuel Le Gallo, Abu Sebastian

Abstract: The precise programming of crossbar arrays of unit-cells is crucial for obtaining high matrix-vector-multiplication (MVM) accuracy in analog in-memory computing (AIMC) cores. We propose a radically different approach based on directly minimizing the MVM error using gradient descent with synthetic random input data. Our method significantly reduces the MVM error compared with conventional unit-cell… ▽ More The precise programming of crossbar arrays of unit-cells is crucial for obtaining high matrix-vector-multiplication (MVM) accuracy in analog in-memory computing (AIMC) cores. We propose a radically different approach based on directly minimizing the MVM error using gradient descent with synthetic random input data. Our method significantly reduces the MVM error compared with conventional unit-cell by unit-cell iterative programming. It also eliminates the need for high-resolution analog-to-digital converters (ADCs) to read the small unit-cell conductance during programming. Our method improves the experimental inference accuracy of ResNet-9 implemented on two phase-change memory (PCM)-based AIMC cores by 1.26%. △ Less

Submitted 26 May, 2023; originally announced May 2023.

Journal ref: 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 33.1.1-33.1.4

A 64-core mixed-signal in-memory compute chip based on phase-change memory for deep neural network inference

Authors: Manuel Le Gallo, Riduan Khaddam-Aljameh, Milos Stanisavljevic, Athanasios Vasilopoulos, Benedikt Kersting, Martino Dazzi, Geethan Karunaratne, Matthias Braendli, Abhairaj Singh, Silvia M. Mueller, Julian Buechel, Xavier Timoneda, Vinay Joshi, Urs Egger, Angelo Garofalo, Anastasios Petropoulos, Theodore Antonakopoulos, Kevin Brew, Samuel Choi, Injo Ok, Timothy Philip, Victor Chan, Claire Silvestre, Ishtiaq Ahsan, Nicole Saulnier , et al. (4 additional authors not shown)

Abstract: The need to repeatedly shuttle around synaptic weight values from memory to processing units has been a key source of energy inefficiency associated with hardware implementation of artificial neural networks. Analog in-memory computing (AIMC) with spatially instantiated synaptic weights holds high promise to overcome this challenge, by performing matrix-vector multiplications (MVMs) directly withi… ▽ More The need to repeatedly shuttle around synaptic weight values from memory to processing units has been a key source of energy inefficiency associated with hardware implementation of artificial neural networks. Analog in-memory computing (AIMC) with spatially instantiated synaptic weights holds high promise to overcome this challenge, by performing matrix-vector multiplications (MVMs) directly within the network weights stored on a chip to execute an inference workload. However, to achieve end-to-end improvements in latency and energy consumption, AIMC must be combined with on-chip digital operations and communication to move towards configurations in which a full inference workload is realized entirely on-chip. Moreover, it is highly desirable to achieve high MVM and inference accuracy without application-wise re-tuning of the chip. Here, we present a multi-core AIMC chip designed and fabricated in 14-nm complementary metal-oxide-semiconductor (CMOS) technology with backend-integrated phase-change memory (PCM). The fully-integrated chip features 64 256x256 AIMC cores interconnected via an on-chip communication network. It also implements the digital activation functions and processing involved in ResNet convolutional neural networks and long short-term memory (LSTM) networks. We demonstrate near software-equivalent inference accuracy with ResNet and LSTM networks while implementing all the computations associated with the weight layers and the activation functions on-chip. The chip can achieve a maximal throughput of 63.1 TOPS at an energy efficiency of 9.76 TOPS/W for 8-bit input/output matrix-vector multiplications. △ Less

Submitted 6 December, 2022; originally announced December 2022.

Journal ref: Nature Electronics 6, 680-693 (2023)

Measurement of onset of structural relaxation in melt-quenched phase change materials

Authors: Benedikt Kersting, Syed Ghazi Sarwat, Manuel Le Gallo, Kevin Brew, Sebastian Walfort, Nicole Saulnier, Martin Salinga, Abu Sebastian

Abstract: Chalcogenide phase change materials enable non-volatile, low-latency storage-class memory. They are also being explored for new forms of computing such as neuromorphic and in-memory computing. A key challenge, however, is the temporal drift in the electrical resistance of the amorphous states that encode data. Drift, caused by the spontaneous structural relaxation of the newly recreated melt-quenc… ▽ More Chalcogenide phase change materials enable non-volatile, low-latency storage-class memory. They are also being explored for new forms of computing such as neuromorphic and in-memory computing. A key challenge, however, is the temporal drift in the electrical resistance of the amorphous states that encode data. Drift, caused by the spontaneous structural relaxation of the newly recreated melt-quenched amorphous phase, has consistently been observed to have a logarithmic dependence in time. Here, we show that this observation is valid only in a certain observable timescale. Using threshold-switching voltage as the measured variable, based on temperature-dependent and short timescale electrical characterization, we experimentally measure the onset of drift. This additional feature of the structural relaxation dynamics serves as a new benchmark to appraise the different classical models to explain drift. △ Less

Submitted 11 June, 2021; originally announced June 2021.

Phase Change Memtransistive Synapse

Authors: Syed Ghazi Sarwat, Benedikt Kersting, Timoleon Moraitis, Vara Prasad Jonnalagadda, Abu Sebastian

Abstract: In the mammalian nervous system, various synaptic plasticity rules act, either individually or synergistically, and over wide-ranging timescales to dictate the processes that enable learning and memory formation. To mimic biological cognition for artificial intelligence, neuromorphic computing platforms thus call for synthetic synapses, that can faithfully express such complex plasticity and dynam… ▽ More In the mammalian nervous system, various synaptic plasticity rules act, either individually or synergistically, and over wide-ranging timescales to dictate the processes that enable learning and memory formation. To mimic biological cognition for artificial intelligence, neuromorphic computing platforms thus call for synthetic synapses, that can faithfully express such complex plasticity and dynamics. Although some plasticity rules have been emulated with elaborate CMOS and memristive circuitry, hardware demonstrations that combine multiple plasticities, such as long-term (LTP) and short-term plasticity (STP) with tunable dynamics and within the same low-power nanoscale devices have been missing. Here, we introduce phase change memtransistive synapse that leverages the non-volatility of memristors and the volatility of transistors for coupling LTP with homo and heterosynaptic STP effects. We show that such biomimetic synapses can enable some powerful cognitive frameworks, such as the short-term spike-timing-dependent plasticity (ST-STDP) and stochastic Hopfield neural networks. We demonstrate how, much like the mammalian brain, such emulations can establish temporal relationships in data streams for the task of sequential learning and combinatorial optimization. △ Less

Submitted 10 June, 2021; v1 submitted 28 May, 2021; originally announced May 2021.

Projected mushroom-type phase-change memory

Authors: Syed Ghazi Sarwat, Timothy M. Philip, Ching-Tzu Chen, Benedikt Kersting, Robert L Bruce, Cheng-Wei Cheng, Ning Li, Nicole Saulnier, Matthew BrightSky, Abu Sebastian

Abstract: Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promi… ▽ More Phase-change memory devices have found applications in in-memory computing where the physical attributes of these devices are exploited to compute in place without the need to shuttle data between memory and processing units. However, non-idealities such as temporal variations in the electrical resistance have a detrimental impact on the achievable computational precision. To address this, a promising approach is projecting the phase configuration of phase change material onto some stable element within the device. Here we investigate the projection mechanism in a prominent phase-change memory device architecture, namely mushroom-type phase-change memory. Using nanoscale projected Ge2Sb2Te5 devices we study the key attributes of state-dependent resistance, drift coefficients, and phase configurations, and using them reveal how these devices fundamentally work. △ Less

Submitted 3 January, 2022; v1 submitted 28 May, 2021; originally announced May 2021.

Journal ref: Adv. Funct. Mater. 2021, 31, 2106547

Monatomic phase change memory

Authors: Martin Salinga, Benedikt Kersting, Ider Ronneberger, Vara Prasad Jonnalagadda, Xuan Thang Vu, Manuel Le Gallo, Iason Giannopoulos, Oana Cojocaru-Mirédin, Riccardo Mazzarello, Abu Sebastian

Abstract: Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends crucially on how the materials at the core of this technology adapt to the requirements arising from continued scaling towards higher device densities. A common strate… ▽ More Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends crucially on how the materials at the core of this technology adapt to the requirements arising from continued scaling towards higher device densities. A common strategy to finetune the properties of phase change memory materials, reaching reasonable thermal stability in optical data storage, relies on mixing precise amounts of different dopants, resulting often in quaternary or even more complicated compounds. Here we show how the simplest material imaginable, a single element (in this case, antimony), can become a valid alternative when confined in extremely small volumes. This compositional simplification eliminates problems related to unwanted deviations from the optimized stoichiometry in the switching volume, which become increasingly pressing when devices are aggressively miniaturized. Removing compositional optimization issues may allow one to capitalize on nanosize effects in information storage. △ Less

Submitted 1 February, 2019; originally announced February 2019.

Journal ref: Nature Materials, volume 17, pages 681-685 (2018)

Enhancement of the ferromagnetic order of graphite after sulphuric acid treatment

Authors: J. Barzola-Quiquia, W. Böhlmann, P. Esquinazi, A. Schadewitz, A. Ballestar, S. Dusari, L. Schultze-Nobre, B. Kersting

Abstract: We have studied the changes in the ferromagnetic behavior of graphite powder and graphite flakes after treatment with diluted sulphuric acid. We show that this kind of acid treatment enhances substantially the ferromagnetic magnetization of virgin graphite micrometer size powder as well as in graphite flakes. The anisotropic magnetoresistance (AMR) amplitude at 300 K measured in a micrometer size… ▽ More We have studied the changes in the ferromagnetic behavior of graphite powder and graphite flakes after treatment with diluted sulphuric acid. We show that this kind of acid treatment enhances substantially the ferromagnetic magnetization of virgin graphite micrometer size powder as well as in graphite flakes. The anisotropic magnetoresistance (AMR) amplitude at 300 K measured in a micrometer size thin graphite flake after acid treatment reaches values comparable to polycrystalline cobalt. △ Less

Submitted 5 April, 2011; originally announced April 2011.

Comments: 3.2 pages, 4 figures

Journal ref: APPLIED PHYSICS LETTERS 98, 192511 (2011)

Interplay of Magnetic Exchange Interactions and Ni-S-Ni Bond Angles in Polynuclear Nickel(II) Complexes

Authors: Yulia Krupskaya, Alexey Alfonsov, Anupama Parameswaran, Vladislav Kataev, Rüdiger Klingeler, Gunther Steinfeld, Norman Beyer, Mathias Gressenbuch, Berthold Kersting, Bernd Büchner

Abstract: The ability of bridging thiophenolate groups to transmit magnetic exchange interactions between paramagnetic Ni(II) ions has been examined. For this purpose, dinuclear and trinuclear Ni(II)-complexes were prepared and fully characterized by IR- and UV-vis spectroscopy, X-ray crystallography, static magnetization measurements and high-field electron spin resonance (HF-ESR). We compare structural an… ▽ More The ability of bridging thiophenolate groups to transmit magnetic exchange interactions between paramagnetic Ni(II) ions has been examined. For this purpose, dinuclear and trinuclear Ni(II)-complexes were prepared and fully characterized by IR- and UV-vis spectroscopy, X-ray crystallography, static magnetization measurements and high-field electron spin resonance (HF-ESR). We compare structural and magnetic properties of the two Ni(II)-complexes and discuss the relationships between magnetic interactions and chemical bonding. △ Less

Submitted 20 March, 2012; v1 submitted 22 December, 2009; originally announced December 2009.

Comments: 10 pages

Journal ref: ChemPhysChem 2010, 11, 1961 - 1970