Showing 1–5 of 5 results for author: Kemp, N T

Statistical analysis of spin switching in coupled spin-crossover molecules

Authors: Philipp Stegmann, Alex Gee, Neil T. Kemp, Jürgen König

Abstract: We study the switching behavior of two spin-crossover molecules residing in a nanojunction device consisting of two closely spaced gold electrodes. The spin states are monitored through a real-time measurement of the resistance of the junction. A statistical analysis of the resistance values, the occupation probabilities, and the lifetimes of the respective spin states shows that the two spin-cros… ▽ More We study the switching behavior of two spin-crossover molecules residing in a nanojunction device consisting of two closely spaced gold electrodes. The spin states are monitored through a real-time measurement of the resistance of the junction. A statistical analysis of the resistance values, the occupation probabilities, and the lifetimes of the respective spin states shows that the two spin-crossover molecules are coupled to each other. We extract the parameters for a minimal model describing the two coupled spin-crossover molecules. Finally, we use the time dependence of factorial cumulants to demonstrate that the measured data indicates the presence of interactions between the two spin-crossover molecules. △ Less

Submitted 25 July, 2021; originally announced July 2021.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 104, 125431 (2021)

Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single Molecule Spin Crossover Nanogap Devices

Authors: Alex Gee, Ayoub H. Jaafar, Barbora Brachňaková, Jamie Massey, Christopher H. Marrows, Ivan Šalitroš, N. T. Kemp

Abstract: Spin crossover (SCO) molecules are promising bi-stable magnetic switches with applications in molecular spintronics. However, little is known about the switching effects of a single SCO molecule when it is confined between two metal electrodes. Here we examine the switching properties of a [Fe(III)(EtOSalPet )(NCS)] SCO molecule that is specifically tailored for surface deposition and binding to o… ▽ More Spin crossover (SCO) molecules are promising bi-stable magnetic switches with applications in molecular spintronics. However, little is known about the switching effects of a single SCO molecule when it is confined between two metal electrodes. Here we examine the switching properties of a [Fe(III)(EtOSalPet )(NCS)] SCO molecule that is specifically tailored for surface deposition and binding to only one gold electrode in a nanogap device. Temperature dependent conductivity measurements on SCO molecule containing electromigrated gold break junctions show voltage independent telegraphic-like switching between two resistance states at temperature below 200 K. The transition temperature is very different from the transition temperature of 83 K that occurs in a bulk film of the same material. This indicates that the bulk, co-operative SCO phenomenon is no longer preserved for a single molecule and that the surface interaction drastically increases the temperature of the SCO phenomenon. Another key finding of this work is that some devices show switching between multiple resistance levels. We propose that in this case, two SCO molecules are present within the nanogap with both participating in the electronic transport and switching. △ Less

Submitted 19 January, 2020; originally announced January 2020.

Comments: 13 pages, 4 figures, supplementary information (5 pages, 5 figures)

Chua Mem-Components for Adaptive RF Metamaterials

Authors: J. Georgiou, K. M. Kossifos, A. H. Jaafar, N. T. Kemp, M. A. Antoniades

Abstract: Chua's mem-components are ideal for creating adaptive metasurfaces for manipulating EM waves given that they hold their state without external biases. In this paper, we propose a generic adaptive reactive element that is in fact a memcapacitor/meminductor. This element makes use of a polymer that demonstrates reversible trans-cis photochemical isomerization, thus making it possible to change the d… ▽ More Chua's mem-components are ideal for creating adaptive metasurfaces for manipulating EM waves given that they hold their state without external biases. In this paper, we propose a generic adaptive reactive element that is in fact a memcapacitor/meminductor. This element makes use of a polymer that demonstrates reversible trans-cis photochemical isomerization, thus making it possible to change the distance between two conductive plates by up to 25%. Furthermore, a design methodology for utilizing these devices is presented. △ Less

Submitted 20 June, 2019; originally announced July 2019.

Comments: 5 pages, 7 figures, Published in 2018 IEEE International Symposium on Circuits and Systems (ISCAS)

An Optically-Programmable Absorbing Metasurface

Authors: K. M. Kossifos, A. H. Jaafar, N. T. Kemp, M. A. Antoniades, J. Georgiou

Abstract: A tunable metasurface absorber is presented in this work using an optically-programmable capacitor as the tuning element. The tuning element does not employ conventional semiconductor technologies to operate but rather a bases its tuning by changing the optomechanical properties of its dielectric, poly disperse red 1 acrylate (PDR1A). Doing so there are no conventional semiconductor devices in the… ▽ More A tunable metasurface absorber is presented in this work using an optically-programmable capacitor as the tuning element. The tuning element does not employ conventional semiconductor technologies to operate but rather a bases its tuning by changing the optomechanical properties of its dielectric, poly disperse red 1 acrylate (PDR1A). Doing so there are no conventional semiconductor devices in the RF signal path. The metasurface operates at a design frequency of 5.5 GHz and it achieves an optically-tuned bandwidth of 150 MHz, from 5.50 GHz to 5.65 GHz. △ Less

Submitted 20 June, 2019; originally announced July 2019.

Comments: 5 pages, 8 figures, Published in 2018 IEEE International Symposium on Circuits and Systems (ISCAS)

Study of molecular spin-crossover complex Fe(phen)2(NCS)2 thin films

Authors: Shengwei Shi, G. Schmerber, J. Arabski, J. -B. Beaufrand, D. J. Kim, S. Boukari, M. Bowen, N. T. Kemp, N. Viart, G. Rogez, E. Beaurepaire, H. Aubriet, J. Petersen, C. Becker, D. Ruch

Abstract: We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime,… ▽ More We report on the growth by evaporation under high vacuum of high-quality thin films of Fe(phen)2(NCS)2 (phen=1,10-phenanthroline) that maintain the expected electronic structure down to a thickness of 10 nm and that exhibit a temperature-driven spin transition. We have investigated the current-voltage characteristics of a device based on such films. From the space charge-limited current regime, we deduce a mobility of 6.5x10-6 cm2/V?s that is similar to the low-range mobility measured on the widely studied tris(8-hydroxyquinoline)aluminium organic semiconductor. This work paves the way for multifunctional molecular devices based on spin-crossover complexes. △ Less

Submitted 5 August, 2009; originally announced August 2009.

Journal ref: Appl. Phys. Lett. 95, 043303 (2009)