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Photoinduced Patterning of Oxygen Vacancies to Promote the Ferroelectric Phase of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$
Authors:
Thomas E Beechem,
Fernando Vega,
Samantha T. Jaszewski,
Benjamin L. Aronson,
Kyle P. Kelley,
Jon F. Ihlefeld
Abstract:
Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) thin-films. Modest ($\sim 0.02-0.77~\mathrm{mJ/μm^2}$) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTI…
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Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) thin-films. Modest ($\sim 0.02-0.77~\mathrm{mJ/μm^2}$) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTIR measurements showed that the photoinduced oxygen vacancy concentration reduction promoted formation of the ferroelectric phase (space group $Pca2_1$) resulting in an increase in the piezoelectric response measured by piezoresponse force microscopy. Photoinduced vacancy tailoring provides, therefore, a spatially prescriptive, post-synthesis, and low-entry method to modify phase in \hfo-based materials.
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Submitted 17 June, 2024;
originally announced June 2024.
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Closed-Loop Electron-Beam-Induced Spectroscopy and Nanofabrication Around Individual Quantum Emitters
Authors:
Jawaher Almutlaq,
Kyle P. Kelley,
Hyeongrak Choi,
Linsen Li,
Benjamin Lawrie,
Ondrej Dyck,
Dirk Englund,
Stephen Jesse
Abstract:
Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometri…
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Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometries. While different out-coupling methods with near-unity efficiency exist, many have yet to be realized due to current limitations in nanofabrication methods, especially for mechanically hard materials like diamond. Here, we leverage electron-beam-induced etching to modify Sn-implanted diamond quantum microchiplets containing integrated waveguides with width and thickness of 280 nm and 200 nm, respectively. This approach allows for simultaneous high-resolution imaging and modification of the host matrix with an open geometry and direct writing. When coupled with the cathodoluminescence signal generated from the electron-emitter interactions, we can monitor the enhancement of the quantum emitters in real-time with nanoscale spatial resolution. The operando measurement and manipulation of single photon emitters demonstrated here provides a new foundation for the control of emitter-cavity interactions in integrated quantum photonics.
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Submitted 8 December, 2023;
originally announced December 2023.
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Ferroelectric domain nucleation and switching pathways in hafnium oxide
Authors:
Sebastian Calderon V,
Samantha T. Jaszewski,
Kyle P. Kelley,
Jon F. Ihlefeld,
Elizabeth Dickey
Abstract:
Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide (HfO2), remain in a state of development, and a clear understanding of the effects of relevant compositional and processing parameters to control their ferroele…
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Nanoscale ferroelectrics that can be integrated into microelectronic fabrication processes are highly desirable for low-power computing and non-volatile memory devices. However, scalable novel ferroelectric materials, such as hafnium oxide (HfO2), remain in a state of development, and a clear understanding of the effects of relevant compositional and processing parameters to control their ferroelectric properties and the actual polarization switching mechanisms are still under investigation. One key fundamental knowledge gap is the polarization switching pathway in ferroelectric hafnia. To further our fundamental understanding of domain nucleation and switching, we have studied polarization switching pathways in HfO2-x thin films in real-time at the atomic scale using transmission electron microscopy. We employed differential phase contrast imaging that allows for the acquisition of both hafnium and oxygen atomic column signals and facilitates the observation of relative movement of atomic columns between both sublattices. Our results demonstrate that the switching pathway involves a transient tetragonal-like local structure, as oxygen ions shift in locations and remain within their parent hafnium polyhedra.
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Submitted 28 November, 2023;
originally announced November 2023.
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The interplay between ferroelectricity and electrochemical reactivity on the surface of binary ferroelectric Al$_x$B$_{1-x}$N
Authors:
Yongtao Liu,
Anton Ievlev,
Joseph Casamento,
John Hayden,
Susan Trolier-McKinstry,
Jon-Paul Maria,
Sergei V. Kalinin,
Kyle P. Kelley
Abstract:
Polarization dynamics and domain structure evolution in ferroelectric Al$_{0.93}$B$_{0.07}$N are studied using piezoresponse force microscopy and spectroscopies in ambient and controlled atmosphere environments. The application of negative unipolar, and bipolar first-order reverse curve (FORC) waveforms leads to a protrusion-like feature on the Al$_{0.93}$B$_{0.07}$N surface and reduction of elect…
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Polarization dynamics and domain structure evolution in ferroelectric Al$_{0.93}$B$_{0.07}$N are studied using piezoresponse force microscopy and spectroscopies in ambient and controlled atmosphere environments. The application of negative unipolar, and bipolar first-order reverse curve (FORC) waveforms leads to a protrusion-like feature on the Al$_{0.93}$B$_{0.07}$N surface and reduction of electromechanical response due to electrochemical reactivity. A surface change is also observed on the application of fast alternating current bias. At the same time, the application of positive biases does not lead to surface changes. Comparatively in a controlled glove box atmosphere, stable polarization patterns can be observed, with minuscule changes in surface morphology. This surface morphology change is not isolated to applying biases to free surface, a similar topographical change is also observed at the electrode edges when cycling a capacitor in ambient environment. The study suggests that surface electrochemical reactivity may have a significant impact on the functionality of this material in the ambient environment. However, even in the controlled atmosphere, the participation of the surface ions in polarization switching phenomena and ionic compensation is possible.
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Submitted 7 July, 2023;
originally announced July 2023.
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An effective Landau-type model of Hf$_x$Zr$_{1-x}$O$_2$ thin film - graphene nanostructure
Authors:
Anna N. Morozovska,
Maksym V. Strikha,
Kyle P. Kelley,
Sergei V. Kalinin,
Eugene A. Eliseev
Abstract:
To describe the charge-polarization coupling in the nanostructure formed by a thin Hf$_x$Zr$_{1-x}$O$_2$ film with a single-layer graphene as a top electrode, we develop the "effective" Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf$_x$Zr$_{1-x}$O$_2$ films from a limit…
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To describe the charge-polarization coupling in the nanostructure formed by a thin Hf$_x$Zr$_{1-x}$O$_2$ film with a single-layer graphene as a top electrode, we develop the "effective" Landau-Ginzburg-Devonshire model. This approach is based on the parametrization of the Landau expansion coefficients for the polar (FE) and antipolar (AFE) orderings in thin Hf$_x$Zr$_{1-x}$O$_2$ films from a limited number of polarization-field curves and hysteresis loops. The Landau expansion coefficients are nonlinearly dependent on the film thickness h and Zr/[Hf+Zr] ratio x, in contrast to h-independent and linearly x-dependent expansion coefficients of a classical Landau energy. We explain the dependence of the Landau expansion coefficients by the strong nonmonotonic dependence of the polar properties on the Hf$_x$Zr$_{1-x}$O$_2$ film thickness, grain size and surface energy. The proposed Landau free energy with five "effective" expansion coefficients, which are interpolation functions of x and h, describes the continuous transformation of polarization dependences on applied electric field and hysteresis loop shapes induced by the changes of x and h in the range 0 < x < 1 and 5 nm < h < 35 nm. Using the effective free energy, we demonstrated that the polarization of Hf$_x$Zr$_{1-x}$O$_2$ films influences strongly on the graphene conductivity, and the full correlation between the distribution of polarization and charge carriers in graphene is revealed. In accordance with our modeling, the polarization of the (5 - 25) nm thick Hf$_x$Zr$_{1-x}$O$_2$ films, which are in the ferroelectric-like or antiferroelectric-like states for the chemical compositions 0.35 < x < 0.95, determine the concentration of carriers in graphene and can control its field dependence. The result can be promising for creation of next generation Si-compatible nonvolatile memories and graphene-ferroelectric FETs.
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Submitted 19 October, 2023; v1 submitted 3 July, 2023;
originally announced July 2023.
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Bending-induced isostructural transitions in ultrathin layers of van der Waals ferrielectrics
Authors:
Anna N. Morozovska,
Eugene A. Eliseev,
Yongtao Liu,
Kyle P. Kelley,
Ayana Ghosh,
Ying Liu,
**yuan Yao,
Nicholas V. Morozovsky,
Andrei L Kholkin,
Yulian M. Vysochanskii,
Sergei V. Kalinin
Abstract:
Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is…
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Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is the existence of two ferrielectric states, FI1 and FI2, corresponding to big and small polarization values, which arise due to the specific four-well potential of the eighth-order LGD functional. When the CIPS layer is flat, the single-domain FI1 state is stable in the central part of the layer, and the FI2 states are stable near the fixed edges. With an increase of the layer bending below the critical value, the sizes of the FI2 states near the fixed edges decreases, and the size of the FI1 region increases. When the bending exceeds the critical value, the edge FI2 states disappear being substituted by the FI1 state, but they appear abruptly near the inflection regions and expand as the bending increases. The bending-induced isostructural FI1-FI2 transition is specific for the bended van der Waals ferrielectrics described by the eighth (or higher) order LGD functional with consideration of linear and nonlinear electrostriction couplings. The isostructural transition, which is revealed in the vicinity of room temperature, can significantly reduce the coercive voltage of ferroelectric polarization reversal in CIPS nanoflakes, allowing for the curvature-engineering control of various flexible nanodevices.
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Submitted 24 May, 2023;
originally announced May 2023.
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Disentangling stress and curvature effects in layered 2D ferroelectric CuInP2S6
Authors:
Yongtao Liu,
Anna N. Morozovska,
Ayana Ghosh,
Kyle P. Kelley,
Eugene A. Eliseev,
**yuan Yao,
Ying Liu,
Sergei V. Kalinin
Abstract:
Nanoscale ferroelectric 2D materials offer unique opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInP2S6 (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and unique ferrielectric properties due to coexistence of 2 polar sublattices. H…
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Nanoscale ferroelectric 2D materials offer unique opportunity to investigate curvature and strain effects on materials functionalities. Among these, CuInP2S6 (CIPS) has attracted tremendous research interest in recent years due to combination of room temperature ferroelectricity, scalability to a few layers thickness, and unique ferrielectric properties due to coexistence of 2 polar sublattices. Here, we explore the local curvature and strain effect on the polarization in CIPS via piezoresponse force microscopy and spectroscopy. To explain the observed behaviors and decouple the curvature and strain effects in 2D CIPS, we introduce finite element Landau-Ginzburg-Devonshire model. The results show that bending induces ferrielectric domains in CIPS, and the polarization-voltage hysteresis loops differ in bending and non-bending regions. Our simulation indicates that the flexoelectric effect can affect local polarization hysteresis. These studies open a novel pathway for the fabrication of curvature-engineered nanoelectronic devices.
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Submitted 23 May, 2023;
originally announced May 2023.
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Large Enhancements in Optical and Piezoelectric Properties in Ferroelectric Zn1-xMgxO Thin Films through Engineering Electronic and Ionic Anharmonicities
Authors:
Rui Zu,
Gyunghyun Ryu,
Kyle P. Kelley,
Steven M. Baksa,
Leonard C Jacques,
Bo Wang,
Kevin Ferri,
**gyang He,
Long-Qing Chen,
Ismaila Dabo,
Susan Trolier-McKinstry,
Jon-Paul Maria,
Venkatraman Gopalan
Abstract:
Multifunctionality as a paradigm requires materials exhibiting multiple superior properties. Integrating second-order optical nonlinearity and large bandgap with piezoelectricity could, for example, enable broadband, strain-tunable photonics. Though very different phenomena at distinct frequencies, both second-order optical nonlinearity and piezoelectricity are third-rank polar tensors present onl…
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Multifunctionality as a paradigm requires materials exhibiting multiple superior properties. Integrating second-order optical nonlinearity and large bandgap with piezoelectricity could, for example, enable broadband, strain-tunable photonics. Though very different phenomena at distinct frequencies, both second-order optical nonlinearity and piezoelectricity are third-rank polar tensors present only in acentric crystal structures. However, simultaneously enhancing both phenomena is highly challenging since it involves competing effects with tradeoffs. Recently, a large switchable ferroelectric polarization of ~ 80 uC cm-2 was reported in Zn1-xMgxO films. Here, ferroelectric Zn1-xMgxO is demonstrated to be a platform that hosts simultaneously a 30% increase in the electronic bandgap, a 50% enhancement in the second harmonic generation coefficients, and a near 200% improvement in the piezoelectric coefficients over pure ZnO. These enhancements are shown to be due to a 400% increase in the electronic anharmonicity and a ~200% decrease in the ionic anharmonicity with Mg substitution. Precisely controllable periodic ferroelectric domain gratings are demonstrated down to 800 nm domain width, enabling ultraviolet quasi-phase-matched optical harmonic generation as well as domain-engineered piezoelectric devices.
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Submitted 9 May, 2023; v1 submitted 27 April, 2023;
originally announced April 2023.
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Exploring the microstructural origins of conductivity and hysteresis in metal halide perovskites via active learning driven automated scanning probe microscopy
Authors:
Yongtao Liu,
Jonghee Yang,
Rama K. Vasudevan,
Kyle P. Kelley,
Maxim Ziatdinov,
Sergei V. Kalinin,
Mahshid Ahmadi
Abstract:
Electronic transport and hysteresis in metal halide perovskites (MHPs) are key to the applications in photovoltaics, light emitting devices, and light and chemical sensors. These phenomena are strongly affected by the materials microstructure including grain boundaries, ferroic domain walls, and secondary phase inclusions. Here, we demonstrate an active machine learning framework for 'driving' an…
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Electronic transport and hysteresis in metal halide perovskites (MHPs) are key to the applications in photovoltaics, light emitting devices, and light and chemical sensors. These phenomena are strongly affected by the materials microstructure including grain boundaries, ferroic domain walls, and secondary phase inclusions. Here, we demonstrate an active machine learning framework for 'driving' an automated scanning probe microscope (SPM) to discover the microstructures responsible for specific aspects of transport behavior in MHPs. In our setup, the microscope can discover the microstructural elements that maximize the onset of conduction, hysteresis, or any other characteristic that can be derived from a set of current-voltage spectra. This approach opens new opportunities for exploring the origins of materials functionality in complex materials by SPM and can be integrated with other characterization techniques either before (prior knowledge) or after (identification of locations of interest for detail studies) functional probing.
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Submitted 14 December, 2022;
originally announced December 2022.
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Disentangling electronic transport and hysteresis at individual grain boundaries in hybrid perovskites via automated scanning probe microscopy
Authors:
Yongtao Liu,
Jonghee Yang,
Benjamin J. Lawrie,
Kyle P. Kelley,
Maxim Ziatdinov,
Sergei V. Kalinin,
Mahshid Ahmadi
Abstract:
Underlying the rapidly increasing photovoltaic efficiency and stability of metal halide perovskites (MHPs) is the advance in the understanding of the microstructure of polycrystalline MHP thin film. Over the past decade, intense efforts have aimed to understand the effect of microstructure on MHP properties, including chemical heterogeneity, strain disorder, phase impurity, etc. It has been found…
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Underlying the rapidly increasing photovoltaic efficiency and stability of metal halide perovskites (MHPs) is the advance in the understanding of the microstructure of polycrystalline MHP thin film. Over the past decade, intense efforts have aimed to understand the effect of microstructure on MHP properties, including chemical heterogeneity, strain disorder, phase impurity, etc. It has been found that grain and grain boundary (GB) are tightly related to lots of microscale and nanoscale behavior in MHP thin film. Atomic force microscopy (AFM) is widely used to observe grain and boundary structures in topography and subsequently to study the correlative surface potential and conductivity of these structures. For now, most AFM measurements have been performed in imaging mode to study the static behavior, in contrast, AFM spectroscopy mode allows us to investigate the dynamic behavior of materials, e.g. conductivity under swee** voltage. However, a major limitation of AFM spectroscopy measurements is that it requests manual operation by human operators, as such only limited data can be obtained, hindering systematic investigations of these microstructures. In this work, we designed a workflow combining the conductive AFM measurement with a machine learning (ML) algorithm to systematically investigate grain boundaries in MHPs. The trained ML model can extract GBs locations from the topography image, and the workflow drives the AFM probe to each GB location to perform a current-voltage (IV) curve automatically. Then, we are able to IV curves at all GB locations, allowing us to systematically understand the property of GBs. Using this method, we discover that the GB junction points are more photoactive, while most previous works only focused on the difference between GB and grains.
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Submitted 25 October, 2022;
originally announced October 2022.
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Ferroelectricity in Hafnia Controlled via Surface Electrochemical State
Authors:
Kyle P. Kelley,
Anna N. Morozovska,
Eugene A. Eliseev,
Yongtao Liu,
Shelby S. Fields,
Samantha T. Jaszewski,
Takanori Mimura,
Jon F. Ihlefeld,
Sergei V. Kalinin
Abstract:
Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions s…
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Ferroelectricity in binary oxides including hafnia and zirconia have riveted the attention of the scientific community due to highly unconventional physical mechanisms and the potential for integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviors such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggests that ferroelectricity in these materials is strongly coupled with additional mechanisms, with possible candidates including the ionic subsystem or strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via decoupling of electrochemical and electrostatic controls realized via environmental and ultra-high vacuum PFM, we show that these materials demonstrate a rich spectrum of ferroic behaviors including partial pressure- and temperature-induced transitions between FE and AFE behaviors. These behaviors are consistent with an antiferroionic model and suggest novel strategies for hafnia-based device optimization.
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Submitted 25 July, 2022;
originally announced July 2022.
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Probing temperature-induced phase transitions at individual ferroelectric domain walls
Authors:
Kyle P. Kelley,
Sergei V. Kalinin,
Eugene Eliseev,
Shivaranjan Raghuraman,
Stephen Jesse,
Peter Maksymovych,
Anna N. Morozovska
Abstract:
Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been focused on bias-induced dynamics and transport behaviors. Here, we introduce the scanning probe microscopy approach based on piezoresponse force microscopy (PFM) wit…
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Ferroelectric domain walls have emerged as one of the most fascinating objects in condensed matter physics due to the broad variability of functional behaviors they exhibit. However, the vast majority of domain walls studies have been focused on bias-induced dynamics and transport behaviors. Here, we introduce the scanning probe microscopy approach based on piezoresponse force microscopy (PFM) with a dynamically heated probe, combining local heating and local biasing of the material. This approach is used to explore the thermal polarization dynamics in soft Sn2P2S6 ferroelectrics, and allows for the exploration of phase transitions at individual domain walls. The strong and weak modulation regimes for the thermal PFM are introduced. The future potential applications of heated probe approach for functional SPM measurements including piezoelectric, elastic, microwave, and transport measurements are discussed.
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Submitted 7 July, 2022;
originally announced July 2022.
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Learning the right channel in multimodal imaging: automated experiment in Piezoresponse Force Microscopy
Authors:
Yongtao Liu,
Rama K. Vasudevan,
Kyle P. Kelley,
Hiroshi Funakubo,
Maxim Ziatdinov,
Sergei V. Kalinin
Abstract:
We report the development and experimental implementation of the automated experiment workflows for the identification of the best predictive channel for a phenomenon of interest in spectroscopic measurements. The approach is based on the combination of ensembled deep kernel learning for probabilistic predictions and a basic reinforcement learning policy for channel selection. It allows the identi…
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We report the development and experimental implementation of the automated experiment workflows for the identification of the best predictive channel for a phenomenon of interest in spectroscopic measurements. The approach is based on the combination of ensembled deep kernel learning for probabilistic predictions and a basic reinforcement learning policy for channel selection. It allows the identification of which of the available observational channels, sampled sequentially, are most predictive of selected behaviors, and hence have the strongest correlations. We implement this approach for multimodal imaging in Piezoresponse Force Microscopy (PFM), with the behaviors of interest manifesting in piezoresponse spectroscopy. We illustrate the best predictive channel for polarization-voltage hysteresis loop and frequency-voltage hysteresis loop areas is amplitude in the model samples. The same workflow and code are universal and applicable for any multimodal imaging and local characterization methods.
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Submitted 13 February, 2023; v1 submitted 6 July, 2022;
originally announced July 2022.
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Automated Experiments of Local Non-linear Behavior in Ferroelectric Materials
Authors:
Yongtao Liu,
Kyle P. Kelley,
Rama K. Vasudevan,
Wanlin Zhu,
John Hayden,
Jon-Paul Maria,
Hiroshi Funakubo,
Maxim A. Ziatdinov,
Susan Trolier-McKinstry,
Sergei V. Kalinin
Abstract:
We develop and implement an automated experiment in multimodal imaging to probe structural, chemical, and functional behaviors in complex materials and elucidate the dominant physical mechanisms that control device function. Here the emergence of non-linear electromechanical responses in piezoresponse force microscopy (PFM) is explored. Non-linear responses in PFM can originate from multiple mecha…
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We develop and implement an automated experiment in multimodal imaging to probe structural, chemical, and functional behaviors in complex materials and elucidate the dominant physical mechanisms that control device function. Here the emergence of non-linear electromechanical responses in piezoresponse force microscopy (PFM) is explored. Non-linear responses in PFM can originate from multiple mechanisms, including intrinsic material responses often controlled by domain structure, surface topography that affects the mechanical phenomena at the tip-surface junction, and, potentially, the presence of surface contaminants. Using an automated experiment to probe the origins of non-linear behavior in model ferroelectric lead titanate (PTO) and ferroelectric Al0.93B0.07N films, it was found that PTO showed asymmetric nonlinear behavior across a/c domain walls and a broadened high nonlinear response region around c/c domain walls. In contrast, for Al0.93B0.07N, well-poled regions showed high linear piezoelectric responses paired with low non-linear responses and regions that were multidomain indicated low linear responses and high nonlinear responses. We show that formulating dissimilar exploration strategies in deep kernel learning as alternative hypotheses allows for establishing the preponderant physical mechanisms behind the non-linear behaviors, suggesting that this approach automated experiments can potentially discern between competing physical mechanisms. This technique can also be extended to electron, probe, and chemical imaging.
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Submitted 30 June, 2022;
originally announced June 2022.
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Exploring Physics of Ferroelectric Domain Walls in Real Time: Deep Learning Enabled Scanning Probe Microscopy
Authors:
Yongtao Liu,
Kyle P. Kelley,
Hiroshi Funakubo,
Sergei V. Kalinin,
Maxim Ziatdinov
Abstract:
The functionality of ferroelastic domain walls in ferroelectric materials is explored in real-time via the in-situ implementation of computer vision algorithms in scanning probe microscopy (SPM) experiment. The robust deep convolutional neural network (DCNN) is implemented based on a deep residual learning framework (Res) and holistically-nested edge detection (Hed), and ensembled to minimize the…
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The functionality of ferroelastic domain walls in ferroelectric materials is explored in real-time via the in-situ implementation of computer vision algorithms in scanning probe microscopy (SPM) experiment. The robust deep convolutional neural network (DCNN) is implemented based on a deep residual learning framework (Res) and holistically-nested edge detection (Hed), and ensembled to minimize the out-of-distribution drift effects. The DCNN is implemented for real-time operations on SPM, converting the data stream into the semantically segmented image of domain walls and the corresponding uncertainty. We further demonstrate the pre-selected experimental workflows on thus discovered domain walls, and report alternating high- and low- polarization dynamic (out-of-plane) ferroelastic domain walls in a (PbTiO3) PTO thin film and high polarization dynamic (out-of-plane) at short ferroelastic walls (compared with long ferroelastic walls) in a lead zirconate titanate (PZT) thin film. This work establishes the framework for real-time DCNN analysis of data streams in scanning probe and other microscopies and highlights the role of out-of-distribution effects and strategies to ameliorate them in real time analytics.
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Submitted 22 June, 2022;
originally announced June 2022.
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Hypothesis-Driven Automated Experiment in Scanning Probe Microscopy: Exploring the Domain Growth Laws in Ferroelectric Materials
Authors:
Yongtao Liu,
Anna Morozovska,
Eugene Eliseev,
Kyle P. Kelley,
Rama Vasudevan,
Maxim Ziatdinov,
Sergei V. Kalinin
Abstract:
We report the development and implementation of a hypothesis learning based automated experiment, in which the microscope operating in the autonomous mode identifies the physical laws behind the material's response. Specifically, we explore the bias induced transformations that underpin the functionality of broad classes of devices and functional materials from batteries and memristors to ferroele…
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We report the development and implementation of a hypothesis learning based automated experiment, in which the microscope operating in the autonomous mode identifies the physical laws behind the material's response. Specifically, we explore the bias induced transformations that underpin the functionality of broad classes of devices and functional materials from batteries and memristors to ferroelectrics and antiferroelectrics. Optimization and design of these materials require probing the mechanisms of these transformations on the nanometer scale as a function of the broad range of control parameters such as applied potential and time, often leading to experimentally intractable scenarios. At the same time, often the behaviors of these systems are understood within potentially competing theoretical models, or hypotheses. Here, we develop a hypothesis list that covers the possible limiting scenarios for the domain growth, including thermodynamic, domain wall pinning, and screening limited. We further develop and experimentally implement the hypothesis driven automated experiment in Piezoresponse Force Microscopy, autonomously identifying the mechanisms of the bias induced domain switching. This approach can be applied for a broad range of physical and chemical experiments with relatively low dimensional control parameter space and for which the possible competing models of the system behavior that ideally cover the full range of physical eventualities are known or can be created. These include other scanning probe microscopy modalities such as force distance curve measurements and nanoindentation, as well as materials synthesis and optimization.
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Submitted 2 February, 2022;
originally announced February 2022.
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Exploring leakage in dielectric films via automated experiment in scanning probe microscopy
Authors:
Yongtao Liu,
Shelby S. Fields,
Takanori Mimura,
Kyle P. Kelley,
Jon F. Ihlefeld,
Sergei V. Kalinin
Abstract:
Electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). Here, we use large field of view scanning to identify the position of localized conductive spots and develop a SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Usin…
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Electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). Here, we use large field of view scanning to identify the position of localized conductive spots and develop a SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Using this approach, we observe the variable behaviors of the conductive spots in a 20 nm thick ferroelectric Hf0.54Zr0.48O2 film, where conductive spots disappear and reappear during continuous scanning. There are also new conductive spots that appear during scanning. The automated workflow is universal and can be integrated into a wide range of microscopy techniques, including SPM, electron microscopy, optical microscopy, and chemical imaging.
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Submitted 18 November, 2021;
originally announced November 2021.
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Experimental discovery of structure-property relationships in ferroelectric materials via active learning
Authors:
Yongtao Liu,
Kyle P. Kelley,
Rama K. Vasudevan,
Hiroshi Funakubo,
Maxim A. Ziatdinov,
Sergei V. Kalinin
Abstract:
Emergent functionalities of structural and topological defects in ferroelectric materials underpin an extremely broad spectrum of applications ranging from domain wall electronics to high dielectric and electromechanical responses. Many of these have been discovered and quantified via local scanning probe microscopy methods. However, the search for these functionalities has until now been based by…
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Emergent functionalities of structural and topological defects in ferroelectric materials underpin an extremely broad spectrum of applications ranging from domain wall electronics to high dielectric and electromechanical responses. Many of these have been discovered and quantified via local scanning probe microscopy methods. However, the search for these functionalities has until now been based by either trial and error or using auxiliary information such as topography or domain wall structure to identify potential objects of interest based on the intuition of operator or preexisting hypotheses, with subsequent manual exploration. Here, we report the development and implementation of a machine learning framework that actively discovers relationships between local domain structure and polarization switching characteristics in ferroelectric materials encoded in the hysteresis loop. The latter and descriptors such as nucleation bias, coercive bias, hysteresis loop area, or more complex functionals of hysteresis loop shape and corresponding uncertainties are used to guide the discovery via automated piezoresponse force microscopy (PFM) and spectroscopy experiments. As such, this approach combines the power of machine learning methods to learn the correlative relationships between high dimensional data, and human-based physics insights encoded in the acquisition function. For ferroelectric, this automated workflow demonstrates that the discovery path and sampling points of on-field and off-field hysteresis loops are largely different, indicating the on-field and off-field hysteresis loops are dominated by different mechanisms. The proposed approach is universal and can be applied to a broad range of modern imaging and spectroscopy methods ranging from other scanning probe microscopy modalities to electron microscopy and chemical imaging.
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Submitted 28 December, 2021; v1 submitted 12 August, 2021;
originally announced August 2021.
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Automated and Autonomous Experiment in Electron and Scanning Probe Microscopy
Authors:
Sergei V. Kalinin,
Maxim A. Ziatdinov,
Jacob Hinkle,
Stephen Jesse,
Ayana Ghosh,
Kyle P. Kelley,
Andrew R. Lupini,
Bobby G. Sumpter,
Rama K. Vasudevan
Abstract:
Machine learning and artificial intelligence (ML/AI) are rapidly becoming an indispensable part of physics research, with domain applications ranging from theory and materials prediction to high-throughput data analysis. In parallel, the recent successes in applying ML/AI methods for autonomous systems from robotics through self-driving cars to organic and inorganic synthesis are generating enthus…
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Machine learning and artificial intelligence (ML/AI) are rapidly becoming an indispensable part of physics research, with domain applications ranging from theory and materials prediction to high-throughput data analysis. In parallel, the recent successes in applying ML/AI methods for autonomous systems from robotics through self-driving cars to organic and inorganic synthesis are generating enthusiasm for the potential of these techniques to enable automated and autonomous experiment (AE) in imaging. Here, we aim to analyze the major pathways towards AE in imaging methods with sequential image formation mechanisms, focusing on scanning probe microscopy (SPM) and (scanning) transmission electron microscopy ((S)TEM). We argue that automated experiments should necessarily be discussed in a broader context of the general domain knowledge that both informs the experiment and is increased as the result of the experiment. As such, this analysis should explore the human and ML/AI roles prior to and during the experiment, and consider the latencies, biases, and knowledge priors of the decision-making process. Similarly, such discussion should include the limitations of the existing imaging systems, including intrinsic latencies, non-idealities and drifts comprising both correctable and stochastic components. We further pose that the role of the AE in microscopy is not the exclusion of human operators (as is the case for autonomous driving), but rather automation of routine operations such as microscope tuning, etc., prior to the experiment, and conversion of low latency decision making processes on the time scale spanning from image acquisition to human-level high-order experiment planning.
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Submitted 22 March, 2021;
originally announced March 2021.
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Unusual Electrical Conductivity Driven by Localized Stoichiometry Modification at Vertical Epitaxial Interfaces
Authors:
Wenrui Zhang,
Shaobo Cheng,
Christopher M Rouleau,
Kyle P. Kelley,
Jong Keum,
Eli Stavitski,
Yimei Zhu,
Matthew F. Chisholm,
Zheng Gai,
Gyula Eres
Abstract:
Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La1-xSrxMnO3 (LSMO) as a prototypical phase transition material and establish vertical epitaxial int…
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Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La1-xSrxMnO3 (LSMO) as a prototypical phase transition material and establish vertical epitaxial interfaces with NiO to explore the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiometry modification overcomes the plaguing dead layer problem in LSMO and leads to strongly directional conductivity, as manifested by more than three orders of magnitude difference between out-of-plane to in-plane conductivity. Comprehensive structural characterization and transport measurements reveal that this emerging behavior is related to a compositional change produced by directional cation diffusion that pushes the LSMO phase transition from insulating into metallic within an ultrathin interface region. This study explores the nature of unusual electric conductivity at vertical epitaxial interfaces and establishes an effective route for engineering nanoscale electron transport for oxide electronics.
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Submitted 29 July, 2020;
originally announced July 2020.
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Long-lived modulation of plasmonic absorption by ballistic thermal injection
Authors:
John A. Tomko,
Evan L. Runnerstrom,
Yi-Siang Wang,
Joshua R. Nolen,
David H. Olson,
Kyle P. Kelley,
Angela Cleri,
Josh Nordlander,
Joshua D. Caldwell,
Oleg V. Prezhdo,
Jon-Paul Maria,
Patrick E. Hopkins
Abstract:
Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast pl…
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Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast plasmonic measurements that provide a direct measure of electronic distributions, both spatially and temporally, following optical excitation of a metal-semiconductor heterostructure. For the first time, we explicitly show that in cases of strong non-equilibrium, a novel energy transduction mechanism arises at the metal/semiconductor interface. We find that hot electrons in the metal contact transfer their energy to pre-existing electrons in the semiconductor, without transfer of charge. These experimental results findings are well-supported by both rigorous multilayer optical modeling and first-principle, ab initio calculations.
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Submitted 20 May, 2020;
originally announced May 2020.
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Fast Scanning Probe Microscopy via Machine Learning: Non-rectangular scans with compressed sensing and Gaussian process optimization
Authors:
Kyle P. Kelley,
Maxim Ziatdinov,
Liam Collins,
Michael A. Susner,
Rama K. Vasudevan,
Nina Balke,
Sergei V. Kalinin,
Stephen Jesse
Abstract:
Fast scanning probe microscopy enabled via machine learning allows for a broad range of nanoscale, temporally resolved physics to be uncovered. However, such examples for functional imaging are few in number. Here, using piezoresponse force microscopy (PFM) as a model application, we demonstrate a factor of 5.8 improvement in imaging rate using a combination of sparse spiral scanning with compress…
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Fast scanning probe microscopy enabled via machine learning allows for a broad range of nanoscale, temporally resolved physics to be uncovered. However, such examples for functional imaging are few in number. Here, using piezoresponse force microscopy (PFM) as a model application, we demonstrate a factor of 5.8 improvement in imaging rate using a combination of sparse spiral scanning with compressive sensing and Gaussian processing reconstruction. It is found that even extremely sparse scans offer strong reconstructions with less than 6 % error for Gaussian processing reconstructions. Further, we analyze the error associated with each reconstructive technique per reconstruction iteration finding the error is similar past approximately 15 iterations, while at initial iterations Gaussian processing outperforms compressive sensing. This study highlights the capabilities of reconstruction techniques when applied to sparse data, particularly sparse spiral PFM scans, with broad applications in scanning probe and electron microscopies.
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Submitted 23 April, 2020;
originally announced April 2020.
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Bayesian inference in band excitation Scanning Probe Microscopy for optimal dynamic model selection in imaging
Authors:
Rama K. Vasudevan,
Kyle P. Kelley,
Eugene Eliseev,
Stephen Jesse,
Hiroshi Funakubo,
Anna Morozovska,
Sergei V. Kalinin
Abstract:
The universal tendency in scanning probe microscopy (SPM) over the last two decades is to transition from simple 2D imaging to complex detection and spectroscopic imaging modes. The emergence of complex SPM engines brings forth the challenge of reliable data interpretation, i.e. conversion from detected signal to descriptors specific to tip-surface interactions and subsequently to materials proper…
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The universal tendency in scanning probe microscopy (SPM) over the last two decades is to transition from simple 2D imaging to complex detection and spectroscopic imaging modes. The emergence of complex SPM engines brings forth the challenge of reliable data interpretation, i.e. conversion from detected signal to descriptors specific to tip-surface interactions and subsequently to materials properties. Here, we implemented a Bayesian inference approach for the analysis of the image formation mechanisms in band excitation (BE) SPM. Compared to the point estimates in classical functional fit approaches, Bayesian inference allows for the incorporation of extant knowledge of materials and probe behavior in the form of corresponding prior distribution and return the information on the material functionality in the form of readily interpretable posterior distributions. We note that in application of Bayesian methods, special care should be made for proper setting on the problem as model selection vs. establishing practical parameter equivalence. We further explore the non-linear mechanical behaviors at topological defects in a classical ferroelectric material, PbTiO3. We observe the non-trivial evolution of Duffing resonance frequency and the nonlinearity of the sample surface, suggesting the presence of the hidden elements of domain structure. These observations suggest that the spectrum of anomalous behaviors at the ferroelectric domain walls can be significantly broader than previously believed and can extend to non-conventional mechanical properties in addition to static and microwave conductance.
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Submitted 19 February, 2020;
originally announced February 2020.
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Dynamic manipulation in piezoresponse force microscopy: creating non-equilibrium phases with large electromechanical response
Authors:
Kyle P. Kelley,
Yao Ren,
Anna N. Morozovska,
Eugene A. Eliseev,
Yoshitaka Ehara,
Hiroshi Funakubo,
Thierry Giamarchi,
Nina Balke,
Rama K. Vasudevan,
Ye Cao,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, a…
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Domains walls and topological defects in ferroelectric materials have emerged as a powerful new paradigm for functional electronic devices including memory and logic. Similarly, wall interactions and dynamics underpin a broad range of mesoscale phenomena ranging from giant electromechanical responses to memory effects. Exploring the functionalities of individual domain walls, their interactions, and controlled modifications of the domain structures is crucial for applications and fundamental physical studies. However, the dynamic nature of these features severely limits studies of their local physics since application of local biases or pressures in piezoresponse force microscopy induce wall displacement as a primary response. Here, we introduce a fundamentally new approach for the control and modification of domain structures based on automated experimentation whereby real space image-based feedback is used to control the tip bias during ferroelectric switching, allowing for modification routes conditioned on domain states under the tip. This automated experiment approach is demonstrated for the exploration of domain wall dynamics and creation of metastable phases with large electromechanical response.
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Submitted 10 January, 2020;
originally announced January 2020.
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Polaritonic hybrid-epsilon-near-zero modes: engineering strong optoelectronic coupling and dispersion in doped cadmium oxide bilayers
Authors:
Evan L. Runnerstrom,
Kyle P. Kelley,
Thomas G. Folland,
Nader Engheta,
Joshua D. Caldwell,
Jon-Paul Maria
Abstract:
Polaritonic materials that support epsilon-near-zero (ENZ) modes offer the opportunity to design light-matter interactions at the nanoscale through phenomena like resonant perfect absorption and extreme sub-wavelength light concentration. To date, the utility of ENZ modes is limited in propagating polaritonic systems by a relatively flat spectral dispersion, which gives ENZ modes small group veloc…
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Polaritonic materials that support epsilon-near-zero (ENZ) modes offer the opportunity to design light-matter interactions at the nanoscale through phenomena like resonant perfect absorption and extreme sub-wavelength light concentration. To date, the utility of ENZ modes is limited in propagating polaritonic systems by a relatively flat spectral dispersion, which gives ENZ modes small group velocities and short propagation lengths. Here we overcome this constraint by coupling ENZ modes to surface plasmon polariton (SPP) modes in doped cadmium oxide ENZ-on-SPP bilayers. What results is a strongly coupled hybrid mode, characterized by strong anti-crossing and a large spectral splitting on the order of 1/3 of the mode frequency. The resonant frequencies, dispersion, and coupling of these polaritonic-hybrid-epsilon-near-zero (PH-ENZ) modes are controlled by tailoring the modal oscillator strength and the ENZ-SPP spectral overlap, which can potentially be utilized for actively tunable strong coupling at the nanoscale. PH-ENZ modes ultimately leverage the most desirable characteristics of both ENZ and SPP modes through simultaneous strong interior field confinement and mode propagation.
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Submitted 11 August, 2018;
originally announced August 2018.
