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Analysis and Applications of a Heralded Electron Source
Authors:
Stewart A. Koppell,
John W. Simonaitis,
Maurice A. R. Krielaart,
William P. Putnam,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
We analytically describe the noise properties of a heralded electron source made from a standard electron gun, a weak photonic coupler, a single photon counter, and an electron energy filter. We argue the traditional heralding figure of merit, the Klyshko efficiency, is an insufficient statistic for characterizing performance in dose-control and dose-limited applications. Instead, we describe the…
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We analytically describe the noise properties of a heralded electron source made from a standard electron gun, a weak photonic coupler, a single photon counter, and an electron energy filter. We argue the traditional heralding figure of merit, the Klyshko efficiency, is an insufficient statistic for characterizing performance in dose-control and dose-limited applications. Instead, we describe the sub-Poissonian statistics of the source using the fractional reduction in variance and the fractional increase in Fisher Information. Using these figures of merit, we discuss the engineering requirements for efficient heralding and evaluate potential applications using simple models of electron lithography, bright-field scanning transmission electron microscopy (BFSTEM), and scanning electron microscopy (SEM). We find that the advantage in each of these applications is situational, but potentially significant: dynamic control of the trade-off between write speed and shot noise in electron lithography; an order of magnitude dose reduction in BFSTEM for thin samples (e.g. 2D materials); and a doubling of dose efficiency for wall-steepness estimation in SEM.
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Submitted 26 June, 2024;
originally announced June 2024.
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Lightwave Electronic Harmonic Frequency Mixing
Authors:
Matthew Yeung,
Lu-Ting Chou,
Marco Turchetti,
Shih-Hsuan Chia,
Karl K. Berggren,
Philip. D. Keathley
Abstract:
Frequency mixers are fundamental building blocks in many electronic systems. They enable frequency conversion for signal detection and processing. While conventional electronic frequency mixers operate in the GHz or at best in the THz frequency range, a compact and scalable petahertz-scale electronic frequency mixer would enable practical field-resolved optical signal processing and readout withou…
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Frequency mixers are fundamental building blocks in many electronic systems. They enable frequency conversion for signal detection and processing. While conventional electronic frequency mixers operate in the GHz or at best in the THz frequency range, a compact and scalable petahertz-scale electronic frequency mixer would enable practical field-resolved optical signal processing and readout without the need for nonlinear optical elements. We used nanoscale antenna structures to experimentally demonstrate electronic harmonic mixing beyond 0.350 PHz. Through this harmonic mixing process, we demonstrate time-domain sampling of optical field waveforms spanning more than one octave of bandwidth. The high nonlinearity of the devices enabled field-resolved detection of spectral content outside of that contained within the local oscillator, greatly extending the range of detectable frequencies compared to conventional heterodyning techniques. We anticipate these devices to provide compact, PHz-scale solid-state detection for integration with emerging technologies such as compact frequency combs, optical waveform synthesizers, and compact timing systems. Our work has important implications for various fields such as chemistry, physics, material science, and biology, where PHz signals exhibiting femtosecond-scale dynamics are of great interest for spectroscopic analysis or imaging.
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Submitted 27 July, 2023;
originally announced July 2023.
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Reduced ITO for Transparent Superconducting Electronics
Authors:
Emma Batson,
Marco Colangelo,
John Simonaitis,
Eyosias Gebremeskel,
Owen Medeiros,
Mayuran Saravanapavanantham,
Vladimir Bulovic,
P. Donald Keathley,
Karl K. Berggren
Abstract:
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhe…
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Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a $\SI{10}{nm}$ thick film of the material would only absorb about 1 - 20\% of light between 500 - 1700 nm.
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Submitted 16 December, 2022;
originally announced December 2022.
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Uncovering Extreme Nonlinear Dynamics in Solids Through Time-Domain Field Analysis
Authors:
Phillip D. Keathley,
Simon V. B. Jensen,
Matthew D. Yeung,
Mina R. Bionta,
Lars B. Madsen
Abstract:
Time-domain analysis of harmonic fields with sub-cycle resolution is now experimentally viable due to the emergence of sensitive, on-chip techniques for petahertz-scale optical-field sampling. We demonstrate how such a time-domain, field-resolved analysis uncovers the extreme nonlinear electron dynamics responsible for high-harmonic generation within solids. Time-dependent density functional theor…
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Time-domain analysis of harmonic fields with sub-cycle resolution is now experimentally viable due to the emergence of sensitive, on-chip techniques for petahertz-scale optical-field sampling. We demonstrate how such a time-domain, field-resolved analysis uncovers the extreme nonlinear electron dynamics responsible for high-harmonic generation within solids. Time-dependent density functional theory was used to simulate harmonic generation from a solid-state band-gap system driven by near- to mid-infrared waveforms. Particular attention was paid to regimes where both intraband and interband emission mechanisms play a critical role in sha** the nonlinear response. We show that a time-domain analysis of the harmonic radiation fields identifies the interplay between intra- and interband dynamical processes underlying the nonlinear light generation. With further analysis, we show that changes to the dominant emission regime can occur after only slight changes to the peak driving intensity and central driving wavelength. Time-domain analysis of harmonic fields also reveals, for the first time, the possibility of rapid changes in the dominant emission mechanism within the temporal window of the driving pulse envelope. Finally, we examine the experimental viability of performing time-domain analysis of harmonic fields with sub-cycle resolution using realistic parameters.
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Submitted 14 October, 2022;
originally announced October 2022.
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Free-electron-light interactions in nanophotonics
Authors:
Charles Roques-Carmes,
Steven E. Kooi,
Yi Yang,
Nicholas Rivera,
Phillip D. Keathley,
John D. Joannopoulos,
Steven G. Johnson,
Ido Kaminer,
Karl K. Berggren,
Marin Soljačić
Abstract:
When im**ing on optical structures or passing in their vicinity, free electrons can spontaneously emit electromagnetic radiation, a phenomenon generally known as cathodoluminescence. Free-electron radiation comes in many guises: Cherenkov, transition, and Smith-Purcell radiation, but also electron scintillation, commonly referred to as incoherent cathodoluminescence. While those effects have bee…
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When im**ing on optical structures or passing in their vicinity, free electrons can spontaneously emit electromagnetic radiation, a phenomenon generally known as cathodoluminescence. Free-electron radiation comes in many guises: Cherenkov, transition, and Smith-Purcell radiation, but also electron scintillation, commonly referred to as incoherent cathodoluminescence. While those effects have been at the heart of many fundamental discoveries and technological developments in high-energy physics in the past century, their recent demonstration in photonic and nanophotonic systems has attracted a lot of attention. Those developments arose from predictions that exploit nanophotonics for novel radiation regimes, now becoming accessible thanks to advances in nanofabrication. In general, the proper design of nanophotonic structures can enable sha**, control, and enhancement of free-electron radiation, for any of the above-mentioned effects. Free-electron radiation in nanophotonics opens the way to promising applications, such as widely-tunable integrated light sources from x-ray to THz frequencies, miniaturized particle accelerators, and highly sensitive high-energy particle detectors. Here, we review the emerging field of free-electron radiation in nanophotonics. We first present a general, unified framework to describe free-electron light-matter interaction in arbitrary nanophotonic systems. We then show how this framework sheds light on the physical underpinnings of many methods in the field used to control and enhance free-electron radiation. Namely, the framework points to the central role played by the photonic eigenmodes in controlling the output properties of free-electron radiation (e.g., frequency, directionality, and polarization). [... see full abstract in paper]
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Submitted 17 August, 2022; v1 submitted 3 August, 2022;
originally announced August 2022.
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Electron Emission Regimes of Planar Nano Vacuum Emitters
Authors:
Marco Turchetti,
Yujia Yang,
Mina R. Bionta,
Alberto Nardi,
Luca Daniel,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free-space, such as high nonlinearity and relative insensitivity to temperature and ionizing radiation, all the while drastically reducing the footprint, increasing the operating…
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Recent advancements in nanofabrication have enabled the creation of vacuum electronic devices with nanoscale free space gaps. These nanoelectronic devices promise the benefits of cold-field emission and transport through free-space, such as high nonlinearity and relative insensitivity to temperature and ionizing radiation, all the while drastically reducing the footprint, increasing the operating bandwidth and reducing the power consumption of each device. Furthermore, planarized vacuum nanoelectronics could easily be integrated at scale similar to typical micro and nanoscale semiconductor electronics. However, the interplay between different electron emission mechanisms from these devices are not well understood, and inconsistencies with pure Fowler-Nordheim emission have been noted by others. In this work, we systematically study the current-voltage characteristics of planar vacuum nano-diodes having few-nanometer radii of curvature and free-space gaps between the emitter and collector. By investigating the current-voltage characteristics of nearly identical diodes fabricated from two different materials and under various environmental conditions, such as temperature and atmospheric pressure, we were able to clearly isolate three distinct emission regimes within a single device: Schottky, Fowler-Nordheim, and saturation. Our work will enable robust and accurate modeling of vacuum nanoelectronics which will be critical for future applications requiring high-speed and low-power electronics capable of operation in extreme conditions.
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Submitted 11 January, 2022;
originally announced January 2022.
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PHz Electronic Device Design and Simulation for Waveguide-Integrated Carrier-Envelope Phase Detection
Authors:
Dario Cattozzo Mor,
Yujia Yang,
Felix Ritzkowsky,
Franz X. Kärtner,
Karl K. Berggren,
Neetesh Kumar Singh,
Phillip D. Keathley
Abstract:
Carrier-envelope phase (CEP) detection of ultrashort optical pulses and low-energy waveform field sampling have recently been demonstrated using direct time-domain methods that exploit optical-field photoemission from plasmonic nanoantennas. These devices make for compact and integratable solid-state detectors operating at optical frequency that work in ambient conditions and require minute pulse…
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Carrier-envelope phase (CEP) detection of ultrashort optical pulses and low-energy waveform field sampling have recently been demonstrated using direct time-domain methods that exploit optical-field photoemission from plasmonic nanoantennas. These devices make for compact and integratable solid-state detectors operating at optical frequency that work in ambient conditions and require minute pulse energies (picojoule-level). Applications include frequency-comb stabilization, visible to near-infrared time-domain spectroscopy, compact tools for attosecond science and metrology and, due to the high electronic switching speeds, petahertz-scale information processing. However, these devices have been driven by free-space optical waveforms and their implementation within integrated photonic platforms has yet to be demonstrated. In this work, we design and simulate fully-integrated plasmonic bow-tie nanoantennas coupled to a Si$_3$N$_4$-core waveguide for CEP detection. We find that when coupled to realistic on-chip, few-cycle supercontinuum sources, these devices are suitable for direct time-domain CEP detection within integrated photonic platforms. We estimate a signal-to-noise ratio of 30 dB at 50 kHz resolution bandwidth. We address technical details, such as the tuning of the nanoantennas plasmonic resonance and the waveform's CEP slippage in the waveguide. Moreover, we evaluate power losses due to absorption and scattering and we study the device sensitivity to pulse duration and pulse peak field intensity. Our results provide the basis for future design and fabrication of time-domain CEP detectors and allow for the development of fully-integrated attosecond science applications, frequency-comb stabilization and light-wave-based PHz electronics.
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Submitted 26 September, 2021;
originally announced September 2021.
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Strong-field Coherent Control of Isolated Attosecond Pulse Generation
Authors:
Yudong Yang,
Roland E. Mainz,
Giulio Maria Rossi,
Fabian Scheiba,
Miguel A. Silva-Toledo,
Phillip D. Keathley,
Giovanni Cirmi,
Franz X. Kärtner
Abstract:
Attosecond science promises to reveal the most fundamental electronic dynamics occurring in matter and it can develop further by meeting two linked technological goals related to high-order harmonic sources: higher photon flux (permitting to measure low cross-section processes) and improved spectral tunability (allowing selectivity in addressing specific electronic transitions). New developments c…
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Attosecond science promises to reveal the most fundamental electronic dynamics occurring in matter and it can develop further by meeting two linked technological goals related to high-order harmonic sources: higher photon flux (permitting to measure low cross-section processes) and improved spectral tunability (allowing selectivity in addressing specific electronic transitions). New developments come through parametric waveform synthesis, which provides control over the shape of high-energy electric field transients, enabling the creation of highly-tunable isolated attosecond pulses via high-harmonic generation. Here we show that central energy, spectral bandwidth/shape and temporal duration of the attosecond pulses can be controlled by sha** the laser pulse waveform via two key parameters: the relative-phase between two halves of the multi-octave spanning optical spectrum, and the overall carrier-envelope phase. These results not only promise to expand the experimental possibilities in attosecond science, but also demonstrate coherent strong-field control of free-electron trajectories using tailored optical waveforms.
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Submitted 19 November, 2021; v1 submitted 16 May, 2021;
originally announced May 2021.
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Nanoantenna Design for Enhanced Carrier-Envelope-Phase Sensitivity
Authors:
Drew Buckley,
Yujia Yang,
Yugu Yang-Keathley,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
Optical-field emission from nanostructured solids such as subwavelength nanoantennas can be leveraged to create sub-femtosecond, PHz-scale electronics for optical-field detection. One application that is of particular interest is the detection of an incident optical pulse's carrier-envelope phase. Such carrier-envelope-phase detection requires few-cycle, broadband optical excitation where the reso…
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Optical-field emission from nanostructured solids such as subwavelength nanoantennas can be leveraged to create sub-femtosecond, PHz-scale electronics for optical-field detection. One application that is of particular interest is the detection of an incident optical pulse's carrier-envelope phase. Such carrier-envelope-phase detection requires few-cycle, broadband optical excitation where the resonant properties of the nanoantenna can strongly alter the response of the near field in time. Little quantitative investigation has been performed to understand how the geometry and resonant properties of the antennae should be tuned to enhance the carrier-envelope phase sensitivity and signal to noise ratio. Here we examine how the geometry and resonance frequency of planar plasmonic nanoantennas can be engineered for enhancing the emitted carrier-envelope-phase-sensitive photocurrent when driven by a few-cycle optical pulse. We find that with the simple addition of curved sidewalls leading to the apex, and proper tuning of the resonance wavelength, the net CEP-sensitive current per nanoantenna can be improved by $5$-$10\times$, and the signal-to-noise-ratio by $50$-$100\times$ relative to simple triangular antennas operated on resonance. Our findings will inform the next generation of nanoantenna designs for emerging applications in ultrafast photoelectron metrology and petahertz electronics.
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Submitted 14 March, 2021;
originally announced March 2021.
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Precise, Sub-Nanosecond, and High-Voltage Switching of Complex Loads Enabled by Gallium Nitride Electronics
Authors:
John W. Simonaitis,
Benjamin Slayton,
Yugu Yang-Keathley,
Phillip D. Keathley,
Karl K. Berggren
Abstract:
In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field effect transistor (GaNFET) and driver, these GaN pulsers are capable of generating pulses ranging from 100 - 650 V and 5 - 60 A in 0.25 - 8 ns using simple designs w…
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In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field effect transistor (GaNFET) and driver, these GaN pulsers are capable of generating pulses ranging from 100 - 650 V and 5 - 60 A in 0.25 - 8 ns using simple designs with easy control, few-nanosecond propagation delays, and MHz repetition rates. We experimentally demonstrate a simple 250 ps, 100 V pulser measured by a directly coupled 2 GHz oscilloscope. By introducing resistive dampening, we can eliminate ringing to allow for precise 100 V transitions that complete a -10 V to -90 V transition in 1.5 ns, limited primarily by the inductance of the oscilloscope measurement path. The performance of the pulser attached to various load structures is simulated, demonstrating the possibility of even faster switching of internal fields in these loads. These circuits also have 0.25 cm$\mathrm{^2}$ active regions and <1 W power dissipation, enabling their integration into a wide variety of environments and apparatus. The proximity of the GaNFETs to the load due to this integration minimizes parasitic quantities that slow switching as well as remove the need to match from 50 $Ω$ lines by allowing for a lumped element approximation small loads. We expect these GaN pulsers to have broad application in fields such as optics, nuclear sciences, charged particle optics, and atomic physics that require nanosecond, high-voltage transitions.
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Submitted 5 February, 2021;
originally announced February 2021.
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Refractory doped titanium nitride nanoscale field emitters
Authors:
Alberto Nardi,
Marco Turchetti,
Wesley A. Britton,
Yuyao Chen,
Yujia Yang,
Luca Dal Negro,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities. Recent results have demonstrated that the optical properties of titanium nitride, a refractory and CMOS-compatible plasmonic material, can be tuned by adding s…
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Refractory materials exhibit high damage tolerance, which is attractive for the creation of nanoscale field-emission electronics and optoelectronics applications that require operation at high peak current densities and optical intensities. Recent results have demonstrated that the optical properties of titanium nitride, a refractory and CMOS-compatible plasmonic material, can be tuned by adding silicon and oxygen dopants. However, to fully leverage the potential of titanium (silicon oxy)nitride, a reliable and scalable fabrication process with few-nm precision is needed. In this work, we developed a fabrication process for producing engineered nanostructures with gaps between 10 and 15 nm, aspect ratios larger than 5 with almost 90° steep sidewalls. Using this process, we fabricated large-scale arrays of electrically-connected bow-tie nanoantennas with few-nm free-space gaps. We measured a typical variation of 4 nm in the average gap size. Using applied DC voltages and optical illumination, we tested the electronic and optoelectronic response of the devices, demonstrating sub-10-V tunneling operation across the free-space gaps, and quantum efficiency of up to 1E-3 at 1.2 μm, which is comparable to a bulk silicon photodiode at the same wavelength. Tests demonstrated that the titanium silicon oxynitride nanostructures did not significantly degrade, exhibiting less than 5 nm of shrinking of the average gap dimensions over few-μm^2 areas after roughly 6 hours of operation. Our results will be useful for develo** the next generation of robust and CMOS-compatible nanoscale devices for high-speed and low-power field-emission electronics and optoelectronics applications.
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Submitted 11 November, 2020;
originally announced November 2020.
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Impact of DC bias on Weak Optical-Field-Driven Electron Emission in Nano-Vacuum-Gap Detectors
Authors:
Marco Turchetti,
Mina R. Bionta,
Yujia Yang,
Felix Ritzkowsky,
Denis Ricardo Candido,
Michael Flatté,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
In this work, we investigate multiphoton and optical-field tunneling emission from metallic surfaces with nanoscale vacuum gaps. Using time-dependent Schrodinger equation (TDSE) simulations, we find that the properties of the emitted photocurrent in such systems can be greatly altered by the application of only a few-volt DC bias. We find that when coupled with expected plasmonic enhancements with…
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In this work, we investigate multiphoton and optical-field tunneling emission from metallic surfaces with nanoscale vacuum gaps. Using time-dependent Schrodinger equation (TDSE) simulations, we find that the properties of the emitted photocurrent in such systems can be greatly altered by the application of only a few-volt DC bias. We find that when coupled with expected plasmonic enhancements within the nanometer-scale metallic gaps, the application of this DC bias significantly reduces the threshold for the transition to optical-field-driven tunneling from the metal surface, and could sufficiently enhance the emitted photocurrents, to make it feasible to electronically tag fJ ultrafast pulses at room temperature. Given the petahertz-scale instantaneous response of the photocurrents, and the low effective capacitance of thin-film nanoantenna devices that enables < 1 fs response time, detectors that exploit this bias-enhanced surface emission from nanoscale vacuum gaps could prove to be useful for communication, petahertz electronics, and ultrafast optical-field-resolved metrology.
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Submitted 1 November, 2020;
originally announced November 2020.
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On-chip sampling of optical fields with attosecond resolution
Authors:
Mina R. Bionta,
Felix Ritzkowsky,
Marco Turchetti,
Yujia Yang,
Dario Cattozzo Mor,
William P. Putnam,
Franz X. Kärtner,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
Time-domain sampling of arbitrary electric fields with sub-cycle resolution enables a complete time-frequency analysis of a system's response to electromagnetic illumination. This provides access to dynamic information that is not provided by absorption spectra alone, and has recently been shown through measurements in the infrared that time-domain optical-field sampling offers significant improve…
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Time-domain sampling of arbitrary electric fields with sub-cycle resolution enables a complete time-frequency analysis of a system's response to electromagnetic illumination. This provides access to dynamic information that is not provided by absorption spectra alone, and has recently been shown through measurements in the infrared that time-domain optical-field sampling offers significant improvements with regard to molecular sensitivity and limits of detection compared to traditional spectroscopic methods. Despite the many scientific and technological motivations, time-domain, optical-field sampling systems operating in the visible to near-infrared spectral regions are seldom accessible, requiring large driving pulse energies, and large laser amplifier systems, bulky apparatuses, and vacuum environments. Here, we demonstrate an all-on-chip, optoelectronic device capable of sampling arbitrary, low-energy, near-infrared waveforms under ambient conditions. Our solid-state integrated detector uses optical-field-driven electron emission from resonant nanoantennas to achieve petahertz-level switching speeds by generating on-chip attosecond electron bursts. These bursts are used to probe the electric field of weak optical transients. We demonstrated our devices by sampling the electric field of a ~5 fJ, broadband near-infrared ultrafast laser pulse using a ~50 pJ near-infrared driving pulse. Our sampling measurements recovered the weak optical transient as well as localized plasmonic dynamics of the emitting nanoantennas $in~situ$. This field-sampling device--with its compact footprint and low pulse-energy requirements--offers opportunities in a variety of applications, including: broadband time-domain spectroscopy in the molecular fingerprint region, time-domain analysis of nonlinear phenomena, and detailed studies of strong-field light-matter interactions.
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Submitted 13 September, 2020;
originally announced September 2020.
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Electron-Energy Loss of Ultraviolet Plasmonic Modes in Aluminum Nanodisks
Authors:
Yujia Yang,
Richard G. Hobbs,
Phillip D. Keathley,
Karl K. Berggren
Abstract:
We theoretically investigated electron energy loss spectroscopy (EELS) of ultraviolet surface plasmon modes in aluminum nanodisks. Using full-wave simulations, we studied the impact of diameter on the resonant modes of the nanodisks. We found that the mode behavior can be separately classified for two distinct cases: (1) flat nanodisks where the diameter is much less than the thickness; and (2) th…
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We theoretically investigated electron energy loss spectroscopy (EELS) of ultraviolet surface plasmon modes in aluminum nanodisks. Using full-wave simulations, we studied the impact of diameter on the resonant modes of the nanodisks. We found that the mode behavior can be separately classified for two distinct cases: (1) flat nanodisks where the diameter is much less than the thickness; and (2) thick nanodisks where the diameter is comparable to the thickness. While the multipolar edge modes and breathing modes of flat nanostructures have previously been interpreted using intuitive, analytical models based on surface plasmon polariton (SPP) modes of a thin-film stack, it has been found that the true dispersion relation of the multipolar edge modes deviates significantly from the SPP dispersion relation. Here, we developed a modified intuitive model that uses effective wavelength theory to accurately model this dispersion relation with significantly less computational overhead compared to full-wave electromagnetic simulations. However, for the case of thick nanodisks, this effective wavelength theory breaks down, and such intuitive models are no longer viable. We found that this is because some modes of the thick nanodisks carry a polar (i.e. out of the substrate plane, or along the electron beam direction) dependence and cannot be simply categorized as radial breathing modes or angular (azimuthal) multipolar edge modes. This polar dependence leads to radiative losses, motivating the use of simultaneous EELS and cathodoluminescence measurements when experimentally investigating the complex mode behavior of thick nanostructures.
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Submitted 22 July, 2020;
originally announced July 2020.
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Complete phase retrieval of photoelectron wavepackets
Authors:
Luca Pedrelli,
Phillip D. Keathley,
Laura Cattaneo,
Franz X. Kärtner,
Ursula Keller
Abstract:
Coherent, broadband pulses of extreme ultraviolet (XUV) light provide a new and exciting tool for exploring attosecond electron dynamics. Using photoelectron streaking, interferometric spectrograms can be generated that contain a wealth of information about the phase properties of the photoionization process. If properly retrieved, this phase information reveals attosecond dynamics during photoele…
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Coherent, broadband pulses of extreme ultraviolet (XUV) light provide a new and exciting tool for exploring attosecond electron dynamics. Using photoelectron streaking, interferometric spectrograms can be generated that contain a wealth of information about the phase properties of the photoionization process. If properly retrieved, this phase information reveals attosecond dynamics during photoelectron emission such as multielectron dynamics and resonance processes. However, until now, the full retrieval of the continuous electron wavepacket phase from isolated attosecond pulses has remained challenging. Here, after elucidating key approximations and limitations that hinder one from extracting the coherent electron wavepacket dynamics using available retrieval algorithms, we present a new method called Absolute Complex Dipole transmission matrix element reConstruction (ACDC). We apply the ACDC method to experimental spectrograms to resolve the phase and group delay difference between photoelectrons emitted from Ne and Ar. Our results reveal subtle dynamics in this group delay difference of photoelectrons emitted form Ar. These group delay dynamics were not resolvable with prior methods that were only able to extract phase information at discrete energy levels, emphasizing the importance of a complete and continuous phase retrieval technique such as ACDC. Here we also make this new ACDC retrieval algorithm available with appropriate citation in return.
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Submitted 28 February, 2020;
originally announced February 2020.
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Nanostructured-membrane electron phase plates
Authors:
Yujia Yang,
Chung-Soo Kim,
Richard G. Hobbs,
Phillip D. Keathley,
Karl K. Berggren
Abstract:
Electron beams can acquire designed phase modulations by passing through nanostructured material phase plates. These phase modulations enable electron wavefront sha** and benefit electron microscopy, spectroscopy, lithography, and interferometry. However, in the fabrication of electron phase plates, the typically used focused-ion-beam-milling method limits the fabrication throughput and hence th…
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Electron beams can acquire designed phase modulations by passing through nanostructured material phase plates. These phase modulations enable electron wavefront sha** and benefit electron microscopy, spectroscopy, lithography, and interferometry. However, in the fabrication of electron phase plates, the typically used focused-ion-beam-milling method limits the fabrication throughput and hence the active area of the phase plates. Here, we fabricated large-area electron phase plates with electron-beam lithography and reactive-ion-etching. The phase plates are characterized by electron diffraction in transmission electron microscopes with various electron energies, as well as diffractive imaging in a scanning electron microscope. We found the phase plates could produce a null in the center of the bright-field based on coherent interference of diffractive beams. Our work adds capabilities to the fabrication of electron phase plates. The nullification of the direct beam and the tunable diffraction efficiency demonstrated here also paves the way towards novel dark-field electron-microscopy techniques and tunable electron phase plates.
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Submitted 4 January, 2020;
originally announced January 2020.
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Light Phase Detection with On-Chip Petahertz Electronic Networks
Authors:
Yujia Yang,
Marco Turchetti,
Praful Vasireddy,
William P. Putnam,
Oliver Karnbach,
Alberto Nardi,
Franz X. Kärtner,
Karl K. Berggren,
Phillip D. Keathley
Abstract:
Ultrafast light-matter interactions lead to optical-field-driven photocurrents with an attosecond-level temporal response. These photocurrents can be used to detect the carrier-envelope-phase (CEP) of short optical pulses, and could be utilized to create optical-frequency, petahertz (PHz) electronics for information processing. Despite recent reports on optical-field-driven photocurrents in variou…
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Ultrafast light-matter interactions lead to optical-field-driven photocurrents with an attosecond-level temporal response. These photocurrents can be used to detect the carrier-envelope-phase (CEP) of short optical pulses, and could be utilized to create optical-frequency, petahertz (PHz) electronics for information processing. Despite recent reports on optical-field-driven photocurrents in various nanoscale solid-state materials, little has been done in examining the large-scale integration of these devices. In this work, we demonstrate enhanced, on-chip CEP detection via optical-field-driven photocurrent in a monolithic array of electrically-connected plasmonic bow-tie nanoantennas that are contained within an area of hundreds of square microns. The technique is scalable and could potentially be used for shot-to-shot CEP tagging applications requiring orders of magnitude less pulse energy compared to alternative ionization-based techniques. Our results open new avenues for compact time-domain, on-chip CEP detection, and inform the development of integrated circuits for PHz electronics as well as integrated platforms for attosecond and strong-field science.
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Submitted 15 December, 2019;
originally announced December 2019.
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Single-Photon Single-Flux Coupled Detectors
Authors:
Murat Onen,
Marco Turchetti,
Brenden A. Butters,
Mina R. Bionta,
Phillip D. Keathley,
Karl K. Berggren
Abstract:
In this work, we present a novel device that is a combination of a superconducting nanowire single-photon detector and a superconducting multi-level memory. We show that these devices can be used to count the number of detections through single-photon to single-flux conversion. Electrical characterization of the memory properties demonstrates single-flux quantum (SFQ) separated states. Optical mea…
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In this work, we present a novel device that is a combination of a superconducting nanowire single-photon detector and a superconducting multi-level memory. We show that these devices can be used to count the number of detections through single-photon to single-flux conversion. Electrical characterization of the memory properties demonstrates single-flux quantum (SFQ) separated states. Optical measurements using attenuated laser pulses with different mean photon number, pulse energies and repetition rates are shown to differentiate single-photon detection from other possible phenomena, such as multi-photon detection and thermal activation. Finally, different geometries and material stacks to improve device performance, as well as arraying methods are discussed.
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Submitted 24 October, 2019;
originally announced October 2019.
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Antiresonance-Like Behavior in Carrier-Envelope-Phase-Sensitive Optical-Field Photoemission from Plasmonic Nanoantennas
Authors:
P. D. Keathley,
W. P. Putnam,
P. Vasireddy,
R. G. Hobbs,
Y. Yang,
K. K. Berggren,
F. X. Kaertner
Abstract:
Given the quasi-static nature of optical-field emission and the nontrivial dependence of the emission rate on the instantaneous electric field strength, the CEP-sensitive component of the emitted photocurrent is highly sensitive to the energy of the optical pulse, and should carry information about the underlying sub-cycle dynamics of electron emission. Here we examine CEP-sensitive photoemission…
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Given the quasi-static nature of optical-field emission and the nontrivial dependence of the emission rate on the instantaneous electric field strength, the CEP-sensitive component of the emitted photocurrent is highly sensitive to the energy of the optical pulse, and should carry information about the underlying sub-cycle dynamics of electron emission. Here we examine CEP-sensitive photoemission from plasmonic gold nanoantennas excited with few-cycle optical pulses of increasing energy. We observe antiresonance-like features in the CEP-sensitive photocurrent; specifically, at a critical pulse energy, we observe a sharp dip in the magnitude of the CEP-sensitive photocurrent accompanied by a sudden shift of π-radians in the phase of the photocurrent. Using a quasi-static tunneling emission model, we find that these antiresonance-like features arise due to competition between electron emission from neighboring optical half-cycles, and that they are highly sensitive to the precise shape of the driving optical waveform at the surface of the emitter. As the underlying mechanisms that produce the antiresonance-like features are a general consequence of nonlinear, field-driven photoemission, the antiresonance-like features could be used to probe sub-optical-cycle, sub-femtosecond emission processes, not only from solid-state emitters, but also from gas-phase atoms and molecules. Beyond applications in the study of ultrafast, field-driven electron physics, an understanding of these antiresonance-like features will be critical to the development of novel photocathodes for future time-domain metrology and microscopy applications that demand both attosecond temporal and nanometer spatial resolution.
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Submitted 17 October, 2018;
originally announced October 2018.
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Examining the Transition from Multiphoton to Optical-Field Photoemission From Silicon Nanostructures
Authors:
Phillip D. Keathley,
William P. Putnam,
Guillaume Laurent,
Luis F. Velásquez-García,
Franz X. Kärtner
Abstract:
We perform a detailed experimental and theoretical study of the transition from multiphoton to optical-field photoemission from n-doped, single-crystal silicon nanotips. Around this transition, we measure an enhanced emission rate as well as intensity-dependent structure in the photoelectron yield from the illuminated nanostructures. Numerically solving the time-dependent Schrödinger equation (TDS…
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We perform a detailed experimental and theoretical study of the transition from multiphoton to optical-field photoemission from n-doped, single-crystal silicon nanotips. Around this transition, we measure an enhanced emission rate as well as intensity-dependent structure in the photoelectron yield from the illuminated nanostructures. Numerically solving the time-dependent Schrödinger equation (TDSE), we demonstrate that the excess emission derives from the build-up of standing electronic wavepackets near the surface of the silicon, and the intensity dependent structure in this transition results from the increased ponderomotive potential and channel closing effects. By way of time-dependent perturbation theory (TDPT), we then show that the visibility of intensity dependent structure, the transition rate from multiphoton to optical-field emission, and scaling rate at high intensities are all consistent with a narrow band of ground-state energies near the conduction band dominating the emission process in silicon. These results highlight the importance of considering both coherent electron wavepacket dynamics at the emitter surface as well as the ground-state energy distribution when interpreting strong-field photoemission from solids.
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Submitted 17 August, 2017;
originally announced August 2017.
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Toward a terahertz-driven electron gun
Authors:
W. Ronny Huang,
Emilio A. Nanni,
Koustuban Ravi,
Kyung-Han Hong,
Liang Jie Wong,
Phillip D. Keathley,
A. Fallahi,
Luis Zapata,
Franz X. Kärtner
Abstract:
Femtosecond electron bunches with keV energies and eV energy spread are needed by condensed matter physicists to resolve state transitions in carbon nanotubes, molecular structures, organic salts, and charge density wave materials. These semirelativistic electron sources are not only of interest for ultrafast electron diffraction, but also for electron energy-loss spectroscopy and as a seed for x-…
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Femtosecond electron bunches with keV energies and eV energy spread are needed by condensed matter physicists to resolve state transitions in carbon nanotubes, molecular structures, organic salts, and charge density wave materials. These semirelativistic electron sources are not only of interest for ultrafast electron diffraction, but also for electron energy-loss spectroscopy and as a seed for x-ray FELs. Thus far, the output energy spread (hence pulse duration) of ultrafast electron guns has been limited by the achievable electric field at the surface of the emitter, which is 10 MV/m for DC guns and 200 MV/m for RF guns. A single-cycle THz electron gun provides a unique opportunity to not only achieve GV/m surface electric fields but also with relatively low THz pulse energies, since a single-cycle transform-limited waveform is the most efficient way to achieve intense electric fields. Here, electron bunches of 50 fC from a flat copper photocathode are accelerated from rest to tens of eV by a microjoule THz pulse with peak electric field of 72 MV/m at 1 kHz repetition rate. We show that scaling to the readily-available GV/m THz field regime would translate to monoenergetic electron beams of ~100 keV.
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Submitted 22 March, 2015; v1 submitted 30 September, 2014;
originally announced September 2014.