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Basal-plane growth of cadmium arsenide by molecular beam epitaxy
Authors:
David A. Kealhofer,
Honggyu Kim,
Timo Schumann,
Manik Goyal,
Luca Galletti,
Susanne Stemmer
Abstract:
(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surf…
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(001)-oriented thin films of the three-dimensional Dirac semimetal cadmium arsenide can realize a quantum spin Hall insulator and other kinds of topological physics, all within the flexible architecture of epitaxial heterostructures. Here, we report a method for growing (001) cadmium arsenide films using molecular beam epitaxy. The introduction of a thin indium arsenide wetting layer improves surface morphology and structural characteristics, as measured by x-ray diffraction and reflectivity, atomic force microscopy, and scanning transmission electron microscopy. The electron mobility of 50-nm-thick films is found to be 9300 cm2/Vs at 2 K, comparable to the highest-quality films grown in the conventional (112) orientation. This work demonstrates a simple experimental framework for exploring topological phases that are predicted to exist in proximity to the three-dimensional Dirac semimetal phase.
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Submitted 30 March, 2019;
originally announced April 2019.
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Absence of signatures of Weyl orbits in the thickness dependence of quantum transport in cadmium arsenide
Authors:
Luca Galletti,
Timo Schumann,
David A. Kealhofer,
Manik Goyal,
Susanne Stemmer
Abstract:
In a Weyl orbit, the Fermi arc surface states on opposite surfaces of the topological semimetal are connected through the bulk Weyl or Dirac nodes. Having a real-space component, these orbits accumulate a sample-size-dependent phase. Following recent work on the three-dimensional Dirac semimetal cadmium arsenide (Cd3As2), we have sought evidence for this thickness-dependent effect in quantum oscil…
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In a Weyl orbit, the Fermi arc surface states on opposite surfaces of the topological semimetal are connected through the bulk Weyl or Dirac nodes. Having a real-space component, these orbits accumulate a sample-size-dependent phase. Following recent work on the three-dimensional Dirac semimetal cadmium arsenide (Cd3As2), we have sought evidence for this thickness-dependent effect in quantum oscillations and quantum Hall plateaus in (112)-oriented Cd3As2 thin films grown by molecular beam epitaxy. We compare quantum transport in films of varying thickness at apparently identical gate-tuned carrier concentrations and find no clear dependence of the relative phase of the quantum oscillations on the sample thickness. We show that small variations in carrier densities, difficult to detect in low-field Hall measurements, lead to shifts in quantum oscillations that are commensurate with previously reported phase shifts. Future claims of Weyl orbits based on the thickness dependence of quantum transport data require additional studies that demonstrate that these competing effects have been disentangled.
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Submitted 30 March, 2019;
originally announced April 2019.
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Two-Dimensional Dirac Fermions in Thin Films of Cd3As2
Authors:
Luca Galletti,
Timo Schumann,
Omor F. Shoron,
Manik Goyal,
David A. Kealhofer,
Honggyu Kim,
Susanne Stemmer
Abstract:
Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neu…
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Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neutrality point and the presence of a zero energy Landau level, all of which indicate topologically non-trivial states. The resistance at the charge neutrality point is approximately h/e2 and increases rapidly under the application of a magnetic field. The results open many possibilities for gate-tunable topological devices and for the exploration of novel physics in the zero energy Landau level.
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Submitted 26 February, 2018;
originally announced February 2018.
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Observation of the quantum Hall effect in confined films of the three-dimensional Dirac semimetal Cd3As2
Authors:
Timo Schumann,
Luca Galletti,
David A. Kealhofer,
Honggyu Kim,
Manik Goyal,
Susanne Stemmer
Abstract:
The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall e…
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The magnetotransport properties of epitaxial films of Cd3As2, a paradigm three-dimensional Dirac semimetal, are investigated. We show that an energy gap opens in the bulk electronic states of sufficiently thin films and, at low temperatures, carriers residing in surface states dominate the electrical transport. The carriers in these states are sufficiently mobile to give rise to a quantized Hall effect. The sharp quantization demonstrates surface transport that is virtually free of parasitic bulk conduction and paves the way for novel quantum transport studies in this class of topological materials. Our results also demonstrate that heterostructuring approaches can be used to study and engineer quantum states in topological semimetals.
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Submitted 21 November, 2017;
originally announced November 2017.
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Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2
Authors:
Timo Schumann,
Manik Goyal,
David A. Kealhofer,
Susanne Stemmer
Abstract:
Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative l…
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Recently discovered Dirac and Weyl semimetals display unusual magnetoresistance phenomena, including a large, non-saturating, linear transverse magnetoresistance and a negative longitudinal magnetoresistance. The latter is often considered as evidence of fermions having a defined chirality. Classical mechanisms, due to disorder or non-uniform current injection, can however, also produce negative longitudinal magnetoresistance. Here, we report on magnetotransport measurements performed on epitaxial thin films of Cd3As2, a three-dimensional Dirac semimetal. Quasi-linear positive transverse magnetoresistance and negative longitudinal magnetoresistance are observed. By evaluating films of different thickness and by correlating the temperature dependence of the carrier density and mobility with the magnetoresistance characteristics, we demonstrate that both the quasi-linear positive and the negative magnetoresistance are caused by conductivity fluctuations. Chiral anomaly is not needed to explain the observed features.
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Submitted 9 June, 2017;
originally announced June 2017.
