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ISAI: Investigating Solar Axion by Iron-57
Authors:
Tomonori Ikeda,
Toshihiro Fujii,
Takeshi Go Tsuru,
Yuki Amano,
Kazuho Kayama,
Masamune Matsuda,
Hiromu Iwasaki,
Mizuki Uenomachi,
Kentaro Miuchi,
Yoshiyuki Onuki,
Yoshizumi Inoue,
Akimichi Taketa
Abstract:
The existence of the axion is a unique solution for the strong CP problem, and the axion is one of the most promising candidates of the dark matter. Investigating Solar Axion by Iron-57 (ISAI) is being prepared as a complemented table-top experiment to confirm the solar axion scenario. Probing an X-ray emission from the nuclear transitions associated with the axion-nucleon coupling is a leading ap…
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The existence of the axion is a unique solution for the strong CP problem, and the axion is one of the most promising candidates of the dark matter. Investigating Solar Axion by Iron-57 (ISAI) is being prepared as a complemented table-top experiment to confirm the solar axion scenario. Probing an X-ray emission from the nuclear transitions associated with the axion-nucleon coupling is a leading approach. ISAI searches for the monochromatic 14.4 keV X-ray from the first excited state of 57Fe using a state-of-the-art pixelized silicon detector, dubbed XRPIX, under an extremely low-background environment. We highlight scientific objectives, experimental design and the latest status of ISAI.
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Submitted 28 December, 2022;
originally announced December 2022.
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Single Event Tolerance of X-ray SOI Pixel Sensors
Authors:
Kouichi Hagino,
Mitsuki Hayashida,
Takayoshi Kohmura,
Toshiki Doi,
Shun Tsunomachi,
Masatoshi Kitajima,
Takeshi G. Tsuru,
Hiroyuki Uchida,
Kazuho Kayama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Masataka Yukumoto,
Kira Mieda,
Syuto Yonemura,
Tatsunori Ishida,
Takaaki Tanaka,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cr…
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We evaluate the single event tolerance of the X-ray silicon-on-insulator (SOI) pixel sensor named XRPIX, developed for the future X-ray astronomical satellite FORCE. In this work, we measure the cross-section of single event upset (SEU) of the shift register on XRPIX by irradiating heavy ion beams with linear energy transfer (LET) ranging from 0.022 MeV/(mg/cm2) to 68 MeV/(mg/cm2). From the SEU cross-section curve, the saturation cross-section and threshold LET are successfully obtained to be $3.4^{+2.9}_{-0.9}\times 10^{-10}~{\rm cm^2/bit}$ and $7.3^{+1.9}_{-3.5}~{\rm MeV/(mg/cm^2)}$, respectively. Using these values, the SEU rate in orbit is estimated to be $\lesssim$ 0.1 event/year primarily due to the secondary particles induced by cosmic-ray protons. This SEU rate of the shift register on XRPIX is negligible in the FORCE orbit.
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Submitted 10 October, 2022;
originally announced October 2022.
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Spatially resolved study of the SS 433/W50 west region with Chandra: X-ray structure and spectral variation of non-thermal emission
Authors:
Kazuho Kayama,
Takaaki Tanaka,
Hiroyuki Uchida,
Takeshi Go Tsuru,
Takahiro Sudoh,
Yoshiyuki Inoue,
Dmitry Khangulyan,
Naomi Tsuji,
Hiroaki Yamamoto
Abstract:
The X-ray binary SS 433, embedded in the W50 nebula (or supernova remnant W50), shows bipolar jets that are ejected with mildly relativistic velocities, and extend toward the east and west out to scales of tens of parsecs. Previous X-ray observations revealed twin lobes along the jet precession axis that contain compact bright knots dominated by synchrotron radiation, which provide evidence of ele…
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The X-ray binary SS 433, embedded in the W50 nebula (or supernova remnant W50), shows bipolar jets that are ejected with mildly relativistic velocities, and extend toward the east and west out to scales of tens of parsecs. Previous X-ray observations revealed twin lobes along the jet precession axis that contain compact bright knots dominated by synchrotron radiation, which provide evidence of electron acceleration in this system. Particle acceleration in this system is substantiated by the recently detected gamma rays with energies up to at least 25 TeV. To further elucidate the origin of the knots and particle acceleration sites in SS 433/W50, we report here on detailed, spatially resolved X-ray spectroscopy of its western lobe with Chandra. We detect synchrotron emission along the jet precession axis, as well as optically thin thermal emission that is more spatially extended. Between the two previously known knots, w1 and w2, we discover another synchrotron knot, which we call w1.5. We find no significant synchrotron emission between SS 433 and the innermost X-ray knot (w1), suggesting that electrons only begin to be accelerated at w1. The X-ray spectra become gradually steeper from w1 to w2, and then rapidly so immediately outside of w2. Comparing with a model taking into account electron transport and cooling along the jet, this result indicates that the magnetic field in w2 is substantially enhanced, which also explains its brightness. We discuss possible origins of the enhanced magnetic field of w2 as well as scenarios to explain the other two knots.
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Submitted 12 July, 2022;
originally announced July 2022.
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X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite "FORCE"
Authors:
Masatoshi Kitajima,
Kouichi Hagino,
Takayoshi Kohmura,
Mitsuki Hayashida,
Kenji Oono,
Kousuke Negishi,
Keigo Yarita,
Toshiki Doi,
Shun Tsunomachi,
Takeshi G. Tsuru,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Takaaki Tanaka,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Masataka Yukumoto,
Kira Mieda,
Syuto Yonemura,
Tatsunori Ishida,
Yasuo Arai,
Ikuo Kurachi
Abstract:
We have been develo** the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as…
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We have been develo** the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as cosmic rays. From previous studies, positive charges trapped in the SiO2 insulator are known to cause the degradation of the detector performance. To improve the radiation hardness, we developed XRPIX equipped with Double-SOI (D-SOI) structure, introducing an additional silicon layer in the SiO2 insulator. This structure is aimed at compensating for the effect of the trapped positive charges. Although the radiation hardness to cosmic rays of the D-SOI detectors has been evaluated, the radiation effect due to the X-ray irradiation has not been evaluated. Then, we conduct an X-ray irradiation experiment using an X-ray generator with a total dose of 10 krad at the SiO2 insulator, equivalent to 7 years in orbit. As a result of this experiment, the energy resolution in full-width half maximum for the 5.9 keV X-ray degrades by 17.8 $\pm$ 2.8% and the dark current increases by 89 $\pm$ 13%. We also investigate the physical mechanism of the increase in the dark current due to X-ray irradiation using TCAD simulation. It is found that the increase in the dark current can be explained by the increase in the interface state density at the Si/SiO2 interface.
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Submitted 26 May, 2022;
originally announced May 2022.
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Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure
Authors:
Mitsuki Hayashida,
Kouichi Hagino,
Takayoshi Kohmura,
Masatoshi Kitajima,
Keigo Yarita,
Kenji Oono,
Kousuke Negishi,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-…
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X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
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Submitted 11 August, 2021;
originally announced August 2021.
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Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"
Authors:
Ryota Kodama,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Yuki Amano,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Masataka Yukumoto,
Takahiro Hida,
Yasuo Arai,
Ikuo Kurachi,
Takayoshi Kohmura,
Kouichi Hagino,
Mitsuki Hayashida,
Masatoshi Kitajima,
Shoji Kawahito,
Keita Yasutomi,
Hiroki Kamehama
Abstract:
We have been develo** a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit…
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We have been develo** a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the "XRPIX6E" device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0.68 keV and Al-K X-rays at 1.5 keV are successfully detected in the "Frame readout mode", in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1.1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ~$18~e^-$ (rms) and ~$13~e^-$ (rms), respectively.
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Submitted 29 September, 2020;
originally announced September 2020.
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Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy
Authors:
Kouichi Hagino,
Keigo Yarita,
Kousuke Negishi,
Kenji Oono,
Mitsuki Hayashida,
Masatoshi Kitajima,
Takayoshi Kohmura,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Yuki Amano,
Ryota Kodama,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Masataka Yukumoto,
Takahiro Hida,
Yasuo Arai,
Ikuo Kurachi,
Tsuyoshi Hamano,
Hisashi Kitamura
Abstract:
The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the…
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The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.
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Submitted 16 July, 2020;
originally announced July 2020.
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Sub-pixel Response of Double-SOI Pixel Sensors for X-ray Astronomy
Authors:
K. Hagino,
K. Negishi,
K. Oono,
K. Yarita,
T. Kohmura,
T. G. Tsuru,
T. Tanaka,
S. Harada,
K. Kayama,
H. Matsumura,
K. Mori,
A. Takeda,
Y. Nishioka,
M. Yukumoto,
K. Fukuda,
T. Hida,
Y. Arai,
I. Kurachi,
S. Kishimoto
Abstract:
We have been develo** the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than…
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We have been develo** the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than $\sim 10{\rm ~μs}$, which enables low background observation by adopting the anti-coincidence technique. One of the major issues in the development of XRPIX is the electrical interference between the sensor layer and circuit layer, which causes nonuniform detection efficiency at the pixel boundaries. In order to reduce the interference, we introduce a Double-SOI (D-SOI) structure, in which a thin Si layer (middle Si) is added to the insulator layer of the SOI structure. In this structure, the middle Si layer works as an electrical shield to decouple the sensor layer and circuit layer. We measured the detector response of the XRPIX with D-SOI structure at KEK. We irradiated the X-ray beam collimated with $4{\rm ~μmφ}$ pinhole, and scanned the device with $6{\rm ~μm}$ pitch, which is 1/6 of the pixel size. In this paper, we present the improvement in the uniformity of the detection efficiency in D-SOI sensors, and discuss the detailed X-ray response and its physical origins.
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Submitted 26 August, 2019;
originally announced August 2019.
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Measurement of Charge Cloud Size in X-ray SOI Pixel Sensors
Authors:
Kouichi Hagino,
Kenji Oono,
Kousuke Negishi,
Keigo Yarita,
Takayoshi Kohmura,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Sodai Harada,
Tomoyuki Okuno,
Kazuho Kayama,
Yuki Amano,
Hideaki Matsumura,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Kohei Fukuda,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Toshinobu Miyoshi,
Shunji Kishimoto
Abstract:
We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $μ$m with a 4-$μ$m$φ$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of c…
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We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $μ$m with a 4-$μ$m$φ$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of charge clouds of 5.0 keV X-ray is estimated to be $σ_{\rm cloud} = 4.30 \pm 0.07$ $μ$m. Compared to the detector response simulation, the estimated charge cloud size is well explained by a combination of photoelectron range, thermal diffusion, and Coulomb repulsion. Moreover, by analyzing the fraction of multi-pixel events in various energies, we find that the energy dependence of the charge cloud size is also consistent with the simulation.
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Submitted 30 May, 2019;
originally announced May 2019.
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Subpixel Response of SOI Pixel Sensor for X-ray Astronomy with Pinned Depleted Diode: First Result from Mesh Experiment
Authors:
Kazuho Kayama,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Sodai Harada,
Tomoyuki Okuno,
Yuki Amano,
Junko S. Hiraga,
Masayuki Yoshida,
Yasuaki Kamata,
Shotaro Sakuma,
Daito Yuhi,
Yukino Urabe,
Hiroshi Tsunemi,
Hideaki Matsumura,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Yasuo Arai,
Ikuo Kurachi,
Ayaki Takeda,
Koji Mori
, et al. (9 additional authors not shown)
Abstract:
We have been develo** a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully…
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We have been develo** a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 $μ$ m CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 $μ$ s time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution.
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Submitted 26 May, 2019;
originally announced May 2019.
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Performance of SOI Pixel Sensors Developed for X-ray Astronomy
Authors:
Takaaki Tanaka,
Takeshi Go Tsuru,
Hiroyuki Uchida,
Sodai Harada,
Tomoyuki Okuno,
Kazuho Kayama,
Yuki Amano,
Hideaki Matsumura,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Kohei Fukuda,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Shoji Kawahito,
Keiichiro Kagawa,
Keita Yasutomi,
Sumeet Shrestha,
Syunta Nakanishi,
Hiroki Kamehama,
Takayoshi Kohmura,
Kouichi Hagino,
Kousuke Negishi
, et al. (2 additional authors not shown)
Abstract:
We have been develo** monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithi…
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We have been develo** monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~μ{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~μ{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity.
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Submitted 14 December, 2018;
originally announced December 2018.
