Field-free superconducting diode effect in noncentrosymmetric superconductor/ferromagnet multilayers
Authors:
Hideki Narita,
Jun Ishizuka,
Ryo Kawarazaki,
Daisuke Kan,
Yoichi Shiota,
Takahiro Moriyama,
Yuichi Shimakawa,
Alexey V. Ognev,
Alexander S. Samardak,
Youichi Yanase,
Teruo Ono
Abstract:
The diode effect is fundamental to electronic devices and is widely used in rectifiers and AC-DC converters. At low temperatures, however, conventional semiconductor diodes possess a high resistivity, which yields energy loss and heating during operation. The superconducting diode effect (SDE), which relies on broken inversion symmetry in a superconductor may mitigate this obstacle: in one directi…
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The diode effect is fundamental to electronic devices and is widely used in rectifiers and AC-DC converters. At low temperatures, however, conventional semiconductor diodes possess a high resistivity, which yields energy loss and heating during operation. The superconducting diode effect (SDE), which relies on broken inversion symmetry in a superconductor may mitigate this obstacle: in one direction a zero-resistance supercurrent can flow through the diode, but for the opposite direction of current flow, the device enters the normal state with ohmic resistance. The application of a magnetic field can induce SDE in Nb/V/Ta superlattices with a polar structure, in superconducting devices with asymmetric patterning of pinning centres, or in superconductor/ferromagnet hybrid devices with induced vortices. The need for an external magnetic field limits their practical application. Recently, a field-free SDE was observed in a NbSe2/Nb3Br8/NbSe2 junction, and it originates from asymmetric Josephson tunneling that is induced by the Nb3Br8 barrier and the associated NbSe2/Nb3Br8 interfaces. Here, we present another implementation of zero-field SDE using noncentrosymmetric [Nb/V/Co/V/Ta]20 multilayers. The magnetic layers provide the necessary symmetry breaking and we can tune the SDE by adjusting the structural parameters, such as the constituent elements, film thickness, stacking order, and number of repetitions. We control the polarity of the SDE through the magnetization direction of the ferromagnetic layers. Artificially stacked structures, as the one used in this work, are of particular interest as they are compatible with microfabrication techniques and can be integrated with devices such as Josephson junctions. Energy-loss-free SDEs as presented in this work may therefore enable novel non-volatile memories and logic circuits with ultralow power consumption.
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Submitted 1 June, 2022;
originally announced June 2022.
