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Dissipative Kerr soliton microcombs for FEC-free optical communications over 100 channels
Authors:
Shun Fujii,
Shuya Tanaka,
Tamiki Ohtsuka,
Soma Kogure,
Koshiro Wada,
Hajime Kumazaki,
Shun Tasaka,
Yosuke Hashimoto,
Yuta Kobayashi,
Tomohiro Araki,
Kentaro Furusawa,
Norihiko Sekine,
Satoki Kawanishi,
Takasumi Tanabe
Abstract:
The demand for high-speed and highly efficient optical communication techniques has been rapidly growing due to the ever-increasing volume of data traffic. As well as the digital coherent communication used for core and metro networks, intensity modulation and direct detection (IM-DD) are still promising schemes in intra/inter data centers thanks to their low latency, high reliability, and good co…
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The demand for high-speed and highly efficient optical communication techniques has been rapidly growing due to the ever-increasing volume of data traffic. As well as the digital coherent communication used for core and metro networks, intensity modulation and direct detection (IM-DD) are still promising schemes in intra/inter data centers thanks to their low latency, high reliability, and good cost performance. In this work, we study a microresonator-based frequency comb as a potential light source for future IM-DD optical systems where applications may include replacing individual stabilized lasers with a continuous laser driven microresonator. Regarding comb line powers and spectral intervals, we compare a modulation instability comb and a soliton microcomb and provide a quantitative analysis with regard to telecom applications. Our experimental demonstration achieved a forward error correction (FEC) free operation of bit-error rate (BER) <10^(-9) with a 1.45 Tbps capacity using a total of 145 lines over the entire C-band and revealed the possibility of soliton microcomb-based ultra-dense wavelength division multiplexing (WDM) with a simple, cost-effective IM-DD scheme, with a view to future practical use in data centers.
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Submitted 20 December, 2021; v1 submitted 29 October, 2021;
originally announced November 2021.
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n-type electrical conduction in SnS thin films
Authors:
Issei Suzuki,
Sakiko Kawanishi,
Sage R. Bauers,
Andriy Zakutayev,
Zexin Lin,
Satoshi Tsukuda,
Hiroyuki Shibata,
Minseok Kim,
Hiroshi Yanagi,
Takahisa Omata
Abstract:
Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result n-type SnS thin films have never been obtained. This study realizes n-type conduction in SnS thin films for the first time by using RF-magnetron sputtering with Cl do** and sulfur plasma source during deposition. N-type SnS thin films are obtained at all the substr…
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Tin monosulfide (SnS) usually exhibits p-type conduction due to the low formation enthalpy of acceptor-type defects, and as a result n-type SnS thin films have never been obtained. This study realizes n-type conduction in SnS thin films for the first time by using RF-magnetron sputtering with Cl do** and sulfur plasma source during deposition. N-type SnS thin films are obtained at all the substrate temperatures employed in this study (221-341 C), exhibiting carrier concentrations and Hall mobilities of ~2 x 10 18 cm-3 and 0.1-1 cm V-1s-1, respectively. The films prepared without sulfur plasma source, on the other hand, exhibit p-type conduction despite containing a comparable amount of Cl donors. This is likely due to a significant amount of acceptor-type defects originating from sulfur deficiency in p-type films, which appears as a broad optical absorption within the band gap. The demonstration of n-type SnS thin films in this study is a breakthrough for the realization of SnS homojunction solar cells, which are expected to have a higher conversion efficiency than the conventional heterojunction SnS solar cells.
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Submitted 21 December, 2021; v1 submitted 12 July, 2021;
originally announced July 2021.
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Effect of van der Waals interactions on the stability of SiC polytypes
Authors:
Sakiko Kawanishi,
Teruyasu Mizoguchi
Abstract:
Density functional theory calculations with a correction of the long-range dispersion force, namely the van der Waals (vdW) force, are performed for SiC polytypes. The lattice parameters are in good agreement with those obtained from experiments. Furthermore, the stability of the polytypes in the experiments, which show 3C-SiC as the most stable, are reproduced by the present calculations. The eff…
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Density functional theory calculations with a correction of the long-range dispersion force, namely the van der Waals (vdW) force, are performed for SiC polytypes. The lattice parameters are in good agreement with those obtained from experiments. Furthermore, the stability of the polytypes in the experiments, which show 3C-SiC as the most stable, are reproduced by the present calculations. The effect of the vdW force on the electronic structure and the stability of polytypes are discussed. We observe that the vdW interaction is more sensitive to the cubic site than the hexagonal site. Thus, the influence of the vdW force increases with decreasing the hexagonality of the polytype, which results in the confirmation that the most stable polytype is 3C-SiC.
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Submitted 14 December, 2015;
originally announced December 2015.
