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A 10.24-GHz-wide digital spectrometer array system for LMT-FINER: system design and laboratory performance verification
Authors:
Masato Hagimoto,
Akio Taniguchi,
Yoichi Tamura,
Norika Okauchi,
Hiroaki Kawamoto,
Taku Nakajima,
Takumi Hikosaka,
Kenichi Harada,
Toru Taniguchi,
Takeshi Kamazaki,
Takeshi Sakai,
Kunihiko Tanaka,
Ryohei Kawabe
Abstract:
For efficient spectroscopic redshift identification of early galaxies in the northern hemisphere, we aim to combine the Large Millimeter Telescope (LMT) with a wide-band heterodyne receiver, FINER, which will cover radio frequencies of 120--360 GHz and offer a 3--21 GHz intermediate frequency (IF) per sideband and polarization. To take full advantage of such wide IFs, we present a novel 10.24-GHz-…
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For efficient spectroscopic redshift identification of early galaxies in the northern hemisphere, we aim to combine the Large Millimeter Telescope (LMT) with a wide-band heterodyne receiver, FINER, which will cover radio frequencies of 120--360 GHz and offer a 3--21 GHz intermediate frequency (IF) per sideband and polarization. To take full advantage of such wide IFs, we present a novel 10.24-GHz-wide digital spectrometer, DRS4 (Elecs Industry Co., Ltd.). It incorporates 20.48 Gsps samplers with an FPGA-based digital signal processing module. To mitigate the noise contamination from the image sideband, it is equipped with a digital sideband separation function to improve the sideband rejection up to 25 dB. Laboratory performance evaluations show that it exhibits an Allan time of at least ~100 s and a total power dynamic range of at least 7 dB. These results demonstrate its capability of instantaneously wide-band spectroscopy toward high-redshift galaxies with position-switching observations.
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Submitted 12 June, 2024;
originally announced June 2024.
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Micrometer-scale monolayer SnS growth by physical vapor deposition
Authors:
H. Kawamoto,
N. Higashitarumizu,
N. Nagamura,
M. Nakamura,
K. Shimamura,
N. Ohashi,
K. Nagashio
Abstract:
Recently, monolayer SnS, a two-dimensional group IV monochalcogenide, was grown on a mica substrate at the micrometer-size scale by the simple physical vapor deposition (PVD), resulting in the successful demonstration of its in-plane room temperature ferroelectricity. However, the reason behind the monolayer growth remains unclear because it had been considered that the SnS growth inevitably resul…
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Recently, monolayer SnS, a two-dimensional group IV monochalcogenide, was grown on a mica substrate at the micrometer-size scale by the simple physical vapor deposition (PVD), resulting in the successful demonstration of its in-plane room temperature ferroelectricity. However, the reason behind the monolayer growth remains unclear because it had been considered that the SnS growth inevitably results in a multilayer thickness due to the strong interlayer interaction arising from lone pair electrons. Here, we investigate the PVD growth of monolayer SnS from two different feed powders, highly purified SnS and commercial phase-impure SnS. Contrary to expectations, it is suggested that the mica substrate surface is modified by sulfur evaporated from the Sn2S3 contaminant in the as-purchased powder and the lateral growth of monolayer SnS is facilitated due to the enhanced surface diffusion of SnS precursor molecules, unlike the growth from the highly purified powder. This insight provides a guide to identify further controllable growth conditions.
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Submitted 2 December, 2020;
originally announced December 2020.
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Purely in-plane ferroelectricity in monolayer SnS at room temperature
Authors:
N. Higashitarumizu,
H. Kawamoto,
C. -J. Lee,
B. -H. Lin,
F. -H. Chu,
I. Yonemori,
T. i Nishimura,
K. Wakabayashi,
W. -H. Chang,
K. Nagashio
Abstract:
2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric resistive switching for out-of-plane 2D ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer th…
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2D van der Waals ferroelectric semiconductors have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric resistive switching for out-of-plane 2D ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, a micrometer-size monolayer SnS is grown on mica by physical vapor deposition, and in-plane ferroelectric switching is demonstrated with a two-terminal device at room temperature (RT). SnS has been commonly regarded to exhibit the odd-even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust RT ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers. The lack of the odd-even effect probably originates from the interaction with the mica substrate, suggesting the possibility of controlling the stacking sequence of multilayer SnS, going beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a new platform for in-plane ferroelectrics.
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Submitted 18 June, 2020;
originally announced June 2020.
