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Interface transparency to orbital current
Authors:
Igor Lyalin,
Roland K. Kawakami
Abstract:
The transport of spin currents across interfaces is relatively well studied, while the transport properties of orbital currents are just starting to be examined. In Cr/Ni bilayers, the spin-orbit torque (SOT) due to the orbital current generated in the Cr layer is believed to dominate over torques of other origins. In this work, we study SOT in Cr/X/Ni trilayers, where X is an ultra-thin spacer of…
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The transport of spin currents across interfaces is relatively well studied, while the transport properties of orbital currents are just starting to be examined. In Cr/Ni bilayers, the spin-orbit torque (SOT) due to the orbital current generated in the Cr layer is believed to dominate over torques of other origins. In this work, we study SOT in Cr/X/Ni trilayers, where X is an ultra-thin spacer of a different material. Using the SOT as a proxy for the orbital current transferred from the Cr to the Ni layer, we compare Cr/X/Ni results to Pt/X/Ni, the system in which spin current generated in the Pt layer plays a dominant role. We find that across 12 different spacers the apparent interface transparency to the orbital current is comparable or larger than to the spin current.
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Submitted 3 June, 2024;
originally announced June 2024.
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Antiferromagnetic order in a layered magnetic topological insulator MnBi$_2$Se$_4$ probed by resonant soft x-ray scattering
Authors:
Xiang Chen,
Alejandro Ruiz,
Alexander J. Bishop,
Brandon Gunn,
Rourav Basak,
Tiancong Zhu,
Yu He,
Mayia Vranas,
Eugen Weschke,
Roland K. Kawakami,
Robert J. Birgeneau,
Alex Frano
Abstract:
The quasi-two-dimensional magnetic topological insulator MnBi$_2$Se$_4$, stabilized via non-equilibrium molecular beam epitaxy, is investigated by resonant soft x-ray scattering. Kiessig fringes are observed, confirming a high sample quality and a thin film thickness of 10 septuple layers ($\sim$13 nm). An antiferromagnetic Bragg peak is observed at the structurally forbidden reflection, whose mag…
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The quasi-two-dimensional magnetic topological insulator MnBi$_2$Se$_4$, stabilized via non-equilibrium molecular beam epitaxy, is investigated by resonant soft x-ray scattering. Kiessig fringes are observed, confirming a high sample quality and a thin film thickness of 10 septuple layers ($\sim$13 nm). An antiferromagnetic Bragg peak is observed at the structurally forbidden reflection, whose magnetic nature is validated by studying its temperature, energy, and polarization dependence. Through a detailed analysis, an A-type antiferromagetic order with in-plane moments is implied. This alternative spin structure in MnBi$_2$Se$_4$, in contrast to the Ising antiferromagnetic states in other magnetic topological insulators, might be relevant for hosting new topological states.
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Submitted 3 June, 2024;
originally announced June 2024.
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Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMn$_6$Sn$_6$ (R = Er, Tb) Thin Films
Authors:
Shuyu Cheng,
Igor Lyalin,
Wenyi Zhou,
Roland K. Kawakami
Abstract:
Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for r…
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Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn$_6$Sn$_6$ (R = rare earth) compounds are particularly interesting because of the existence of large intrinsic anomalous Hall effect (AHE) which originates from the gapped Dirac cones near the Fermi level. This makes RMn$_6$Sn$_6$ an outstanding candidate for realizing the high-temperature quantum anomalous Hall effect. The growth of RMn$_6$Sn$_6$ thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn$_6$Sn$_6$ have focused on bulk crystals so far, and the synthesis of RMn$_6$Sn$_6$ thin films has not been reported so far. Here we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn$_6$Sn$_6$ and TbMn$_6$Sn$_6$ thin films. It is especially noteworthy that TbMn$_6$Sn$_6$ thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum anomalous Hall effect. Our work paves the avenue toward the control of the AHE using devices patterned from RMn$_6$Sn$_6$ thin films.
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Submitted 9 January, 2024;
originally announced January 2024.
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Towards Assessing and Benchmarking Risk-Return Tradeoff of Off-Policy Evaluation
Authors:
Haruka Kiyohara,
Ren Kishimoto,
Kosuke Kawakami,
Ken Kobayashi,
Kazuhide Nakata,
Yuta Saito
Abstract:
Off-Policy Evaluation (OPE) aims to assess the effectiveness of counterfactual policies using only offline logged data and is often used to identify the top-k promising policies for deployment in online A/B tests. Existing evaluation metrics for OPE estimators primarily focus on the "accuracy" of OPE or that of downstream policy selection, neglecting risk-return tradeoff in the subsequent online p…
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Off-Policy Evaluation (OPE) aims to assess the effectiveness of counterfactual policies using only offline logged data and is often used to identify the top-k promising policies for deployment in online A/B tests. Existing evaluation metrics for OPE estimators primarily focus on the "accuracy" of OPE or that of downstream policy selection, neglecting risk-return tradeoff in the subsequent online policy deployment. To address this issue, we draw inspiration from portfolio evaluation in finance and develop a new metric, called SharpeRatio@k, which measures the risk-return tradeoff of policy portfolios formed by an OPE estimator under varying online evaluation budgets (k). We validate our metric in two example scenarios, demonstrating its ability to effectively distinguish between low-risk and high-risk estimators and to accurately identify the most efficient one. Efficiency of an estimator is characterized by its capability to form the most advantageous policy portfolios, maximizing returns while minimizing risks during online deployment, a nuance that existing metrics typically overlook. To facilitate a quick, accurate, and consistent evaluation of OPE via SharpeRatio@k, we have also integrated this metric into an open-source software, SCOPE-RL (https://github.com/hakuhodo-technologies/scope-rl). Employing SharpeRatio@k and SCOPE-RL, we conduct comprehensive benchmarking experiments on various estimators and RL tasks, focusing on their risk-return tradeoff. These experiments offer several interesting directions and suggestions for future OPE research.
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Submitted 10 March, 2024; v1 submitted 29 November, 2023;
originally announced November 2023.
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SCOPE-RL: A Python Library for Offline Reinforcement Learning and Off-Policy Evaluation
Authors:
Haruka Kiyohara,
Ren Kishimoto,
Kosuke Kawakami,
Ken Kobayashi,
Kazuhide Nakata,
Yuta Saito
Abstract:
This paper introduces SCOPE-RL, a comprehensive open-source Python software designed for offline reinforcement learning (offline RL), off-policy evaluation (OPE), and selection (OPS). Unlike most existing libraries that focus solely on either policy learning or evaluation, SCOPE-RL seamlessly integrates these two key aspects, facilitating flexible and complete implementations of both offline RL an…
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This paper introduces SCOPE-RL, a comprehensive open-source Python software designed for offline reinforcement learning (offline RL), off-policy evaluation (OPE), and selection (OPS). Unlike most existing libraries that focus solely on either policy learning or evaluation, SCOPE-RL seamlessly integrates these two key aspects, facilitating flexible and complete implementations of both offline RL and OPE processes. SCOPE-RL put particular emphasis on its OPE modules, offering a range of OPE estimators and robust evaluation-of-OPE protocols. This approach enables more in-depth and reliable OPE compared to other packages. For instance, SCOPE-RL enhances OPE by estimating the entire reward distribution under a policy rather than its mere point-wise expected value. Additionally, SCOPE-RL provides a more thorough evaluation-of-OPE by presenting the risk-return tradeoff in OPE results, extending beyond mere accuracy evaluations in existing OPE literature. SCOPE-RL is designed with user accessibility in mind. Its user-friendly APIs, comprehensive documentation, and a variety of easy-to-follow examples assist researchers and practitioners in efficiently implementing and experimenting with various offline RL methods and OPE estimators, tailored to their specific problem contexts. The documentation of SCOPE-RL is available at https://scope-rl.readthedocs.io/en/latest/.
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Submitted 10 March, 2024; v1 submitted 29 November, 2023;
originally announced November 2023.
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Tuning the Curie temperature of a 2D magnet/topological insulator heterostructure to above room temperature by epitaxial growth
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Xiyue S. Zhang,
Katherine Robinson,
Igor Lyalin,
Ziling Li,
Ryan Bailey-Crandell,
Thow Min Jerald Cham,
Shuyu Cheng,
Yunqiu Kelly Luo,
Daniel C. Ralph,
David A. Muller,
Roland K. Kawakami
Abstract:
Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize th…
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Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature ($T_C$) in thin film Fe$_3$GeTe$_2$/Bi$_2$Te$_3$ from bulk-like values ($\sim$220 K) to above room temperature by increasing the growth temperature from 300 $^\circ$C to 375 $^\circ$C. For samples grown at 375 $^\circ$C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe$_m$Ge$_n$Te$_2$ compositions (e.g. Fe$_5$Ge$_2$Te$_2$ and Fe$_7$Ge$_6$Te$_2$) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. This observation paves the way for develo** various Fe$_m$Ge$_n$Te$_2$/TI heterostructures with novel properties.
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Submitted 25 August, 2023;
originally announced August 2023.
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Magnon Diffusion Length and Longitudinal Spin Seebeck Effect in Vanadium Tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$)
Authors:
Seth W. Kurfman,
Denis R. Candido,
Brandi Wooten,
Yuanhua Zheng,
Michael J. Newburger,
Shuyu Cheng,
Roland K. Kawakami,
Joseph P. Heremans,
Michael E. Flatté,
Ezekiel Johnston-Halperin
Abstract:
Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studi…
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Spintronic, spin caloritronic, and magnonic phenomena arise from complex interactions between charge, spin, and structural degrees of freedom that are challenging to model and even more difficult to predict. This situation is compounded by the relative scarcity of magnetically-ordered materials with relevant functionality, leaving the field strongly constrained to work with a handful of well-studied systems that do not encompass the full phase space of phenomenology predicted by fundamental theory. Here we present an important advance in this coupled theory-experiment challenge, wherein we extend existing theories of the spin Seebeck effect (SSE) to explicitly include the temperature-dependence of magnon non-conserving processes. This expanded theory quantitatively describes the low-temperature behavior of SSE signals previously measured in the mainstay material yttrium iron garnet (YIG) and predicts a new regime for magnonic and spintronic materials that have low saturation magnetization, $M_S$, and ultra-low dam**. Finally, we validate this prediction by directly observing the spin Seebeck resistance (SSR) in the molecule-based ferrimagnetic semiconductor vanadium tetracyanoethylene (V[TCNE]$_x$, $x \sim 2$). These results validate the expanded theory, yielding SSR signals comparable in magnitude to YIG and extracted magnon diffusion length ($λ_m>1$ $μ$ m) and magnon lifetime for V[TCNE]$_x$ ($τ_{th}\approx 1-10$ $μ$ s) exceeding YIG ($τ_{th}\sim 10$ ns). Surprisingly, these properties persist to room temperature despite relatively low spin wave stiffness (exchange). This identification of a new regime for highly efficient SSE-active materials opens the door to a new class of magnetic materials for spintronic and magnonic applications.
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Submitted 18 August, 2023;
originally announced August 2023.
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Epitaxial Kagome Thin Films as a Platform for Topological Flat Bands
Authors:
Shuyu Cheng,
M. Nrisimhamurty,
Tong Zhou,
Nuria Bagues,
Wenyi Zhou,
Alexander J. Bishop,
Igor Lyalin,
Chris Jozwiak,
Aaron Bostwick,
Eli Rotenberg,
David W. McComb,
Igor Zutic,
Roland K. Kawakami
Abstract:
Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi l…
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Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi level via electrostatic gating or strain. Here we report the band structures of epitaxial CoSn thin films grown directly on insulating substrates. Flat bands are observed using synchrotron-based angle-resolved photoemission spectroscopy (ARPES). The band structure is consistent with density functional theory (DFT) calculations, and the transport properties are quantitatively explained by the band structure and semiclassical transport theory. Our work paves the way to realize flat band-induced phenomena through fine-tuning of flat bands in kagome materials.
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Submitted 28 July, 2023;
originally announced July 2023.
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Magneto-Optical Detection of the Orbital Hall Effect in Chromium
Authors:
Igor Lyalin,
Sanaz Alikhah,
Marco Berritta,
Peter M. Oppeneer,
Roland K. Kawakami
Abstract:
The orbital Hall effect has been theoretically predicted but its direct observation is a challenge. Here, we report the magneto-optical detection of current-induced orbital accumulation at the surface of a light 3$d$ transition metal, Cr. The orbital polarization is in-plane, transverse to the current direction, and scales linearly with current density, consistent with the orbital Hall effect. Com…
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The orbital Hall effect has been theoretically predicted but its direct observation is a challenge. Here, we report the magneto-optical detection of current-induced orbital accumulation at the surface of a light 3$d$ transition metal, Cr. The orbital polarization is in-plane, transverse to the current direction, and scales linearly with current density, consistent with the orbital Hall effect. Comparing the thickness-dependent magneto-optical measurements with $\textit{ab initio}$ calculations, we estimate an orbital diffusion length in Cr of $6.6\pm 0.6$ nm.
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Submitted 18 June, 2023;
originally announced June 2023.
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Observation of Skyrmion Bubbles in Multilayer [Pt/Co/Cu]n using spin-polarized STM
Authors:
Jacob J. Repicky,
Brad Goff,
Shuyu Cheng,
Roland K. Kawakami,
Jay A. Gupta
Abstract:
Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were grown by molecular beam epitaxy at room temperature. Spin-polarized scanning tunneling microscopy (SP-STM) of these samples was used to probe the connection between…
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Magnetic multilayers are a promising platform for storage and logic devices based on skyrmion spin textures, due to the large materials phase space for tuning properties. Epitaxial superlattice structures of [Pt/Co/Cu]n thin films were grown by molecular beam epitaxy at room temperature. Spin-polarized scanning tunneling microscopy (SP-STM) of these samples was used to probe the connection between surface structure and skyrmion morphology with nanoscale spatial resolution. Irregular-shaped skyrmion bubbles were observed, with effective diameters from 20-200 nm that are much larger than the nanoscale grain structure of the surface topography. Nucleation, annihilation, and motion of skyrmion bubbles could be driven using the stray field of the ferromagnetic tip in repeated imaging, and spin-polarized current/voltage pulses. Our detailed comparison of STM topography and differential conductance images shows that there are no surface defects or inhomogeneities at length scales that could account for the range in skyrmion bubble size or shape observed in the measurements.
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Submitted 1 June, 2023; v1 submitted 17 March, 2023;
originally announced March 2023.
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Scanning Tunneling Microscopy Study of Epitaxial Fe3GeTe2 Monolayers on Bi2Te3
Authors:
Brad M. Goff,
Alexander J. Bishop,
Wenyi Zhou,
Ryan Bailey-Crandell,
Katherine Robinson,
Roland K. Kawakami,
Jay A. Gupta
Abstract:
Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and out…
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Introducing magnetism to the surface state of topological insulators, such as Bi2Te3, can lead to a variety of interesting phenomena. We use scanning tunneling microscopy (STM) to study a single quintuple layer (QL) of the van der Waals magnet Fe3GeTe2 (FGT) that is grown on Bi2Te3 via molecular beam epitaxy. STM topographic images show that the FGT grows as free-standing islands on Bi2Te3 and outwards from Bi2Te3 steps. Atomic resolution imaging shows atomic lattices of 390 +- 10 pm for FGT and 430 +- 10 pm for Bi2Te3, consistent with the respective bulk crystals. A moiré pattern is observed on FGT regions with a periodicity of 4.3 +- 0.4 nm that can be attributed solely to this lattice mismatch and thus indicates zero rotational misalignments. While most of the surface is covered by a single QL of the FGT, there are small double QL regions, as well as regions with distinct chemical terminations due to an incomplete QL. The most common partial QL surface termination is the FeGe layer, in which the top two atomic layers are missing. This termination has a distinctive electronic structure and a (sqrt3 x sqrt3)R30 reconstruction overlaid on the moiré pattern in STM images. Magnetic circular dichroism (MCD) measurements confirm these thin FGT films are ferromagnetic with TC ~190 K.
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Submitted 20 November, 2023; v1 submitted 17 March, 2023;
originally announced March 2023.
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An Atomically Tailored Chiral Magnet with Small Skyrmions at Room Temperature
Authors:
Tao Liu,
Camelia M. Selcu,
Binbin Wang,
Núria Bagués,
Po-Kuan Wu,
Timothy Q. Hartnett,
Shuyu Cheng,
Denis Pelekhov,
Roland A. Bennett,
Joseph Perry Corbett,
Jacob R. Repicky,
Brendan McCullian,
P. Chris Hammel,
Jay A. Gupta,
Mohit Randeria,
Prasanna V. Balachandran,
David W. McComb,
Roland K. Kawakami
Abstract:
Creating materials that do not exist in nature can lead to breakthroughs in science and technology. Magnetic skyrmions are topological excitations that have attracted great attention recently for their potential applications in low power, ultrahigh density memory. A major challenge has been to find materials that meet the dual requirement of small skyrmions stable at room temperature. Here we meet…
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Creating materials that do not exist in nature can lead to breakthroughs in science and technology. Magnetic skyrmions are topological excitations that have attracted great attention recently for their potential applications in low power, ultrahigh density memory. A major challenge has been to find materials that meet the dual requirement of small skyrmions stable at room temperature. Here we meet both these goals by develo** epitaxial FeGe films with excess Fe using atomic layer molecular beam epitaxy (MBE) far from thermal equilibrium. Our novel atomic layer design permits the incorporation of 20% excess Fe while maintaining a non-centrosymmetric crystal structure supported by theoretical calculations and necessary for stabilizing skyrmions. We show that the Curie temperature is well above room temperature, and that the skyrmions probed by topological Hall effect have sizes down to 15 nm as imaged by Lorentz transmission electron microscopy (LTEM) and magnetic force microscopy (MFM). Our results illustrate new avenues for creating artificial materials tailored at the atomic scale that can impact nanotechnology.
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Submitted 9 March, 2023;
originally announced March 2023.
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Room-Temperature Magnetic Skyrmions in Pt/Co/Cu Multilayers
Authors:
Shuyu Cheng,
Núria Bagués,
Camelia M. Selcu,
Jacob B. Freyermuth,
Ziling Li,
Binbin Wang,
Shekhar Das,
P. Chris Hammel,
Mohit Randeria,
David W. McComb,
Roland K. Kawakami
Abstract:
Magnetic skyrmions are promising for next-generation information storage and processing owing to their potential advantages in data storage density, robustness, and energy efficiency. The magnetic multilayers consisting of Pt, Co, and a third metal element $X$ provide an ideal platform to study the skyrmions due to their highly tunable magnetic properties. Here, we report the observation of room-t…
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Magnetic skyrmions are promising for next-generation information storage and processing owing to their potential advantages in data storage density, robustness, and energy efficiency. The magnetic multilayers consisting of Pt, Co, and a third metal element $X$ provide an ideal platform to study the skyrmions due to their highly tunable magnetic properties. Here, we report the observation of room-temperature bubble-like Néel skyrmions in epitaxial Pt/Co/Cu multilayers in samples with multidomain states in zero field. The magneto-optic Kerr effect (MOKE) and superconducting quantum interference device (SQUID) magnetometry are applied to investigate the shapes of the hysteresis loops, the magnetic anisotropy, and the saturation magnetization. By tuning the Co thickness and the number of periods, we achieve perpendicular and in-plane magnetized states and multidomain states that are identified by a wasp-waisted hysteresis loop. Skyrmions are directly imaged by magnetic force microscopy (MFM) and Lorentz transmission electron microscopy (LTEM). The development of room-temperature skyrmions in Pt/Co/Cu multilayers may lead to advances in skyrmion-related research and applications.
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Submitted 28 August, 2023; v1 submitted 3 March, 2023;
originally announced March 2023.
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Type-II magnetic domain contrasts caused by internal-magnetisation induced electron scattering anisotropy
Authors:
Tomohito Tanaka,
Kazuto Kawakami,
Hisashi Mogi,
Satoshi Arai
Abstract:
Previous studies have shown that type-II magnetic domain contrasts are caused by differences in the backscattering yields of magnetic domains of opposite magnetisation. Imaging the magnetic domains when the magnetisation vectors in the opposite-magnetisation domains are perpendicular to the tilt axis of the specimen has been considered impossible, because of the lack of change in the backscatterin…
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Previous studies have shown that type-II magnetic domain contrasts are caused by differences in the backscattering yields of magnetic domains of opposite magnetisation. Imaging the magnetic domains when the magnetisation vectors in the opposite-magnetisation domains are perpendicular to the tilt axis of the specimen has been considered impossible, because of the lack of change in the backscattering yields between the domains. However, we found that it is possible to observe the type-II magnetic domain contrast even in cases where the backscattering coefficients of the domains are the same. The contrast arises from the electron-scattering anisotropy created because of the deflection of the electron trajectories by the Lorentz force. We verify this by distinguishing all four possible in-plane magnetisation vectors on a Fe-Si(100) surface, using an electron backscatter diffraction detector as an arrya of electron detectors. The change in contrast between the magnetic domains, with respect to the location of a virtual electron detector, can provide information on the directions of the magnetisation vectors. A method to suppress the topographic contrast superimposed on the magnetic domain contrast is also demonstrated.
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Submitted 23 February, 2023;
originally announced February 2023.
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Towards Learning Universal Hyperparameter Optimizers with Transformers
Authors:
Yutian Chen,
Xingyou Song,
Chansoo Lee,
Zi Wang,
Qiuyi Zhang,
David Dohan,
Kazuya Kawakami,
Greg Kochanski,
Arnaud Doucet,
Marc'aurelio Ranzato,
Sagi Perel,
Nando de Freitas
Abstract:
Meta-learning hyperparameter optimization (HPO) algorithms from prior experiments is a promising approach to improve optimization efficiency over objective functions from a similar distribution. However, existing methods are restricted to learning from experiments sharing the same set of hyperparameters. In this paper, we introduce the OptFormer, the first text-based Transformer HPO framework that…
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Meta-learning hyperparameter optimization (HPO) algorithms from prior experiments is a promising approach to improve optimization efficiency over objective functions from a similar distribution. However, existing methods are restricted to learning from experiments sharing the same set of hyperparameters. In this paper, we introduce the OptFormer, the first text-based Transformer HPO framework that provides a universal end-to-end interface for jointly learning policy and function prediction when trained on vast tuning data from the wild, such as Google's Vizier database, one of the world's largest HPO datasets. Our extensive experiments demonstrate that the OptFormer can simultaneously imitate at least 7 different HPO algorithms, which can be further improved via its function uncertainty estimates. Compared to a Gaussian Process, the OptFormer also learns a robust prior distribution for hyperparameter response functions, and can thereby provide more accurate and better calibrated predictions. This work paves the path to future extensions for training a Transformer-based model as a general HPO optimizer.
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Submitted 13 October, 2022; v1 submitted 26 May, 2022;
originally announced May 2022.
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Atomic Layer Epitaxy of Kagome Magnet Fe${_3}$Sn${_2}$ and Sn-modulated Heterostructures
Authors:
Shuyu Cheng,
Igor Lyalin,
Alexander J. Bishop,
Roland K. Kawakami,
Binbin Wang,
Núria Bagués,
David W. McComb
Abstract:
Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe…
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Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe${_3}$Sn${_2}$. Structural and magnetic characterization of Fe${_3}$Sn${_2}$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. Superlattice structures consisting of Fe${_3}$Sn${_2}$ and Fe${_3}$Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe${_3}$Sn${_2}$ with other materials.
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Submitted 15 March, 2022;
originally announced March 2022.
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Momentum-Resolved Exciton Coupling and Valley Polarization Dynamics in Monolayer WS$_2$
Authors:
Alice Kunin,
Sergey Chernov,
** Bakalis,
Ziling Li,
Shuyu Cheng,
Zachary H. Withers,
Michael G. White,
Gerd Schönhense,
Xu Du,
Roland K. Kawakami,
Thomas K. Allison
Abstract:
Coupling between exciton states across the Brillouin zone in monolayer transition metal dichalcogenides can lead to ultrafast valley depolarization. Using time- and angle-resolved photoemission, we present momentum- and energy-resolved measurements of exciton coupling in monolayer WS$_2$. By comparing full 4D ($k_x, k_y, E, t$) data sets after both linearly and circularly polarized excitation, we…
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Coupling between exciton states across the Brillouin zone in monolayer transition metal dichalcogenides can lead to ultrafast valley depolarization. Using time- and angle-resolved photoemission, we present momentum- and energy-resolved measurements of exciton coupling in monolayer WS$_2$. By comparing full 4D ($k_x, k_y, E, t$) data sets after both linearly and circularly polarized excitation, we are able to disentangle intervalley and intravalley exciton coupling dynamics. Recording in the exciton binding energy basis instead of excitation energy, we observe strong mixing between the B$_{1s}$ exciton and A$_{n>1}$ states. The photoelectron energy and momentum distributions observed from excitons populated via intervalley coupling (e.g. K$^-$ $\rightarrow$ K$^+$) indicate that the dominant valley depolarization mechanism conserves the exciton binding energy and center-of-mass momentum, consistent with intervalley Coulomb exchange. On longer timescales, exciton relaxation is accompanied by contraction of the momentum space distribution.
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Submitted 4 March, 2022;
originally announced March 2022.
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Kinetically-controlled epitaxial growth of Fe$_3$GeTe$_2$ van der Waals ferromagnetic films
Authors:
Wenyi Zhou,
Alexander J. Bishop,
Menglin Zhu,
Igor Lyalin,
Robert C. Walko,
Jay A. Gupta,
**woo Hwang,
Roland K. Kawakami
Abstract:
We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning…
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We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression of an initial tellurium-deficient non-van der Waals phase (Fe$_3$Ge$_2$) prior to realizing epitaxial growth of the vdW FGT phase. Using cross-sectional scanning transmission electron microscopy and scanning tunneling microscopy, we optimize the FGT films to have atomically smooth surfaces and abrupt interfaces with the Ge(111) substrate. The magnetic properties of our high quality material are confirmed through magneto-optic, magnetotransport, and spin-polarized STM studies. Importantly, this demonstrates how the interplay of energetics and kinetics can help tune the re-evaporation rate of chalcogen atoms and interdiffusion from the underlayer, which paves the way for future studies of van der Waals epitaxy.
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Submitted 8 February, 2022;
originally announced February 2022.
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MLPerf HPC: A Holistic Benchmark Suite for Scientific Machine Learning on HPC Systems
Authors:
Steven Farrell,
Murali Emani,
Jacob Balma,
Lukas Drescher,
Aleksandr Drozd,
Andreas Fink,
Geoffrey Fox,
David Kanter,
Thorsten Kurth,
Peter Mattson,
Dawei Mu,
Amit Ruhela,
Kento Sato,
Koichi Shirahata,
Tsuguchika Tabaru,
Aristeidis Tsaris,
Jan Balewski,
Ben Cumming,
Takumi Danjo,
Jens Domke,
Takaaki Fukai,
Naoto Fukumoto,
Tatsuya Fukushi,
Balazs Gerofi,
Takumi Honda
, et al. (18 additional authors not shown)
Abstract:
Scientific communities are increasingly adopting machine learning and deep learning models in their applications to accelerate scientific insights. High performance computing systems are pushing the frontiers of performance with a rich diversity of hardware resources and massive scale-out capabilities. There is a critical need to understand fair and effective benchmarking of machine learning appli…
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Scientific communities are increasingly adopting machine learning and deep learning models in their applications to accelerate scientific insights. High performance computing systems are pushing the frontiers of performance with a rich diversity of hardware resources and massive scale-out capabilities. There is a critical need to understand fair and effective benchmarking of machine learning applications that are representative of real-world scientific use cases. MLPerf is a community-driven standard to benchmark machine learning workloads, focusing on end-to-end performance metrics. In this paper, we introduce MLPerf HPC, a benchmark suite of large-scale scientific machine learning training applications driven by the MLCommons Association. We present the results from the first submission round, including a diverse set of some of the world's largest HPC systems. We develop a systematic framework for their joint analysis and compare them in terms of data staging, algorithmic convergence, and compute performance. As a result, we gain a quantitative understanding of optimizations on different subsystems such as staging and on-node loading of data, compute-unit utilization, and communication scheduling, enabling overall $>10 \times$ (end-to-end) performance improvements through system scaling. Notably, our analysis shows a scale-dependent interplay between the dataset size, a system's memory hierarchy, and training convergence that underlines the importance of near-compute storage. To overcome the data-parallel scalability challenge at large batch sizes, we discuss specific learning techniques and hybrid data-and-model parallelism that are effective on large systems. We conclude by characterizing each benchmark with respect to low-level memory, I/O, and network behavior to parameterize extended roofline performance models in future rounds.
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Submitted 26 October, 2021; v1 submitted 21 October, 2021;
originally announced October 2021.
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Van der Waals heterostructures for spintronics and opto-spintronics
Authors:
Juan F. Sierra,
Jaroslav Fabian,
Roland K. Kawakami,
Stephan Roche,
Sergio O. Valenzuela
Abstract:
The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities…
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The large variety of 2D materials and their co-integration in van der Waals (vdW) heterostructures enable innovative device engineering. In addition, their atomically-thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. Such a designer approach is particularly compelling for spintronics, which typically harnesses functionalities from thin layers of magnetic and non-magnetic materials and the interfaces between them. Here, we overview recent progress on 2D spintronics and opto-spintronics using vdW heterostructures. After an introduction to the forefront of spin transport research, we highlight the unique spin-related phenomena arising from spin-orbit and magnetic proximity effects. We further describe the ability to create multi-functional hybrid heterostructures based on vdW materials, combining spin, valley and excitonic degrees of freedom. We end with an outlook on perspectives and challenges for the design and production of ultra-compact all-2D spin devices and their potential applications in conventional and quantum technologies.
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Submitted 19 October, 2021;
originally announced October 2021.
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Unified Likelihood Ratio Estimation for High- to Zero-frequency N-grams
Authors:
Masato Kikuchi,
Kento Kawakami,
Kazuho Watanabe,
Mitsuo Yoshida,
Kyoji Umemura
Abstract:
Likelihood ratios (LRs), which are commonly used for probabilistic data processing, are often estimated based on the frequency counts of individual elements obtained from samples. In natural language processing, an element can be a continuous sequence of $N$ items, called an $N$-gram, in which each item is a word, letter, etc. In this paper, we attempt to estimate LRs based on $N$-gram frequency i…
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Likelihood ratios (LRs), which are commonly used for probabilistic data processing, are often estimated based on the frequency counts of individual elements obtained from samples. In natural language processing, an element can be a continuous sequence of $N$ items, called an $N$-gram, in which each item is a word, letter, etc. In this paper, we attempt to estimate LRs based on $N$-gram frequency information. A naive estimation approach that uses only $N$-gram frequencies is sensitive to low-frequency (rare) $N$-grams and not applicable to zero-frequency (unobserved) $N$-grams; these are known as the low- and zero-frequency problems, respectively. To address these problems, we propose a method for decomposing $N$-grams into item units and then applying their frequencies along with the original $N$-gram frequencies. Our method can obtain the estimates of unobserved $N$-grams by using the unit frequencies. Although using only unit frequencies ignores dependencies between items, our method takes advantage of the fact that certain items often co-occur in practice and therefore maintains their dependencies by using the relevant $N$-gram frequencies. We also introduce a regularization to achieve robust estimation for rare $N$-grams. Our experimental results demonstrate that our method is effective at solving both problems and can effectively control dependencies.
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Submitted 3 October, 2021;
originally announced October 2021.
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Accelerating Offline Reinforcement Learning Application in Real-Time Bidding and Recommendation: Potential Use of Simulation
Authors:
Haruka Kiyohara,
Kosuke Kawakami,
Yuta Saito
Abstract:
In recommender systems (RecSys) and real-time bidding (RTB) for online advertisements, we often try to optimize sequential decision making using bandit and reinforcement learning (RL) techniques. In these applications, offline reinforcement learning (offline RL) and off-policy evaluation (OPE) are beneficial because they enable safe policy optimization using only logged data without any risky onli…
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In recommender systems (RecSys) and real-time bidding (RTB) for online advertisements, we often try to optimize sequential decision making using bandit and reinforcement learning (RL) techniques. In these applications, offline reinforcement learning (offline RL) and off-policy evaluation (OPE) are beneficial because they enable safe policy optimization using only logged data without any risky online interaction. In this position paper, we explore the potential of using simulation to accelerate practical research of offline RL and OPE, particularly in RecSys and RTB. Specifically, we discuss how simulation can help us conduct empirical research of offline RL and OPE. We take a position to argue that we should effectively use simulations in the empirical research of offline RL and OPE. To refute the counterclaim that experiments using only real-world data are preferable, we first point out the underlying risks and reproducibility issue in real-world experiments. Then, we describe how these issues can be addressed by using simulations. Moreover, we show how to incorporate the benefits of both real-world and simulation-based experiments to defend our position. Finally, we also present an open challenge to further facilitate practical research of offline RL and OPE in RecSys and RTB, with respect to public simulation platforms. As a possible solution for the issue, we show our ongoing open source project and its potential use case. We believe that building and utilizing simulation-based evaluation platforms for offline RL and OPE will be of great interest and relevance for the RecSys and RTB community.
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Submitted 16 September, 2021;
originally announced September 2021.
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Epitaxial Growth and Domain Structure Imaging of Kagome Magnet Fe$_3$Sn$_2$
Authors:
Shuyu Cheng,
Igor Lyalin,
Alexander J. Bishop,
Roland K. Kawakami
Abstract:
Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the synthesis of high-quality epitaxial films of topological kagome magnet Fe$_3$Sn$_2$ by atomic layer mole…
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Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the synthesis of high-quality epitaxial films of topological kagome magnet Fe$_3$Sn$_2$ by atomic layer molecular beam epitaxy. Structural and magnetic characterization of Fe$_3$Sn$_2$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe$_3$Sn$_2$ with other materials.
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Submitted 25 May, 2021;
originally announced May 2021.
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Chemical Migration and Dipole Formation at van der Waals Interfaces between Magnetic Transition Metal Chalcogenides and Topological Insulators
Authors:
Brenton A. Noesges,
Tiancong Zhu,
Jacob J. Repicky,
Sisheng Yu,
Fenguan Yang,
Jay A. Gupta,
Roland K. Kawakami,
Leonard J. Brillson
Abstract:
Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic chang…
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Metal and magnetic overlayers alter the surface of the topological insulator (TI) bismuth selenide (Bi$_2$Se$_3$) through proximity effects but also by changing the composition and chemical structure of the Bi$_2$Se$_3$ sub-surface. The interface between Bi$_2$Se$_3$ and Mn metal or manganese selenide was explored using x-ray photoelectron spectroscopy (XPS) revealing chemical and electronic changes at the interface. Depositing Mn metal on Bi$_2$Se$_3$ without an external source of Se shows unexpected bonding within the Mn layer due to Mn-Se bonding as Se diffuses out of the Bi$_2$Se$_3$ layer into the growing Mn film. The Se out-diffusion is further evidenced by changes in Bi core levels within the Bi$_2$Se$_3$ layers indicating primarily Bi-Bi bonding over Bi-Se bonding. No out-diffusion of Se occurred when excess Se is supplied with Mn, indicating the importance of supplying enough chalcogen atoms with deposited metals. However, Bi$_2$Se$_3$ core level photoelectrons exhibited a rigid chemical shift toward higher binding energy after depositing a monolayer of MnSe$_{2-x}$, indicating a dipole within the overlayer. Stoichiometry calculations indicated that the monolayer forms MnSe preferentially over the transition metal dichalcogenide (TMD) phase MnSe$_2$, providing a consistent picture of the dipole formation in which a plane of Se anions sits above Mn cations. This study shows that chemical diffusion and dipole formation are important for Mn-Bi$_2$Se$_3$ and MnSe$_{2-x}$-Bi$_2$Se$_3$ and should be considered carefully for TMD/TI interfaces more generally.
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Submitted 12 April, 2020;
originally announced April 2020.
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Coherent Growth and Characterization of van der Waals 1T-VSe$_2$ Layers on GaAs(111)B Using Molecular Beam Epitaxy
Authors:
Tiancong Zhu,
Dante J. O'Hara,
Brenton A. Noesges,
Menglin Zhu,
Jacob J. Repicky,
Mark R. Brenner,
Leonard J. Brillson,
**woo Hwang,
Jay A. Gupta,
Roland K. Kawakami
Abstract:
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectrosc…
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We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective cap** layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.
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Submitted 11 April, 2020;
originally announced April 2020.
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Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBi$_2$Se$_4$
Authors:
Tiancong Zhu,
Alexander J. Bishop,
Tong Zhou,
Menglin Zhu,
Dante J. O'Hara,
Alexander A. Baker,
Shuyu Cheng,
Robert C. Walko,
Jacob J. Repicky,
Jay A. Gupta,
Chris M. Jozwiak,
Eli Rotenberg,
**woo Hwang,
Igor Žutić,
Roland K. Kawakami
Abstract:
The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of…
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The intrinsic magnetic topological insulators MnBi$_2$X$_4$ (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBi$_2$Te$_4$, the study of MnBi$_2$Se$_4$ has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBi$_2$Se$_4$ with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBi$_2$Se$_4$, which demonstrates that MnBi$_2$Se$_4$ is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBi$_2$Se$_4$ is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.
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Submitted 17 March, 2020;
originally announced March 2020.
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Learning Robust and Multilingual Speech Representations
Authors:
Kazuya Kawakami,
Luyu Wang,
Chris Dyer,
Phil Blunsom,
Aaron van den Oord
Abstract:
Unsupervised speech representation learning has shown remarkable success at finding representations that correlate with phonetic structures and improve downstream speech recognition performance. However, most research has been focused on evaluating the representations in terms of their ability to improve the performance of speech recognition systems on read English (e.g. Wall Street Journal and Li…
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Unsupervised speech representation learning has shown remarkable success at finding representations that correlate with phonetic structures and improve downstream speech recognition performance. However, most research has been focused on evaluating the representations in terms of their ability to improve the performance of speech recognition systems on read English (e.g. Wall Street Journal and LibriSpeech). This evaluation methodology overlooks two important desiderata that speech representations should have: robustness to domain shifts and transferability to other languages. In this paper we learn representations from up to 8000 hours of diverse and noisy speech data and evaluate the representations by looking at their robustness to domain shifts and their ability to improve recognition performance in many languages. We find that our representations confer significant robustness advantages to the resulting recognition systems: we see significant improvements in out-of-domain transfer relative to baseline feature sets and the features likewise provide improvements in 25 phonetically diverse languages including tonal languages and low-resource languages.
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Submitted 29 January, 2020;
originally announced January 2020.
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Spin and Magnetism in 2D Materials
Authors:
Roland K. Kawakami
Abstract:
We review recent progress on spins and magnetism in 2D materials including graphene, transition metal dichalcogenides, and 2D magnets. We also discuss challenges and prospects for the future of spintronics with 2D van der Waals heterostructures.
We review recent progress on spins and magnetism in 2D materials including graphene, transition metal dichalcogenides, and 2D magnets. We also discuss challenges and prospects for the future of spintronics with 2D van der Waals heterostructures.
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Submitted 17 March, 2020; v1 submitted 3 November, 2019;
originally announced November 2019.
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Study of photoinduced valence dynamics in EuNi$_2$(Si$_{0.21}$Ge$_{0.79}$)$_2$ through time-resolved X-ray absorption spectroscopy
Authors:
Y. Yokoyama,
K. Kawakami,
Y. Hirata,
K. Takubo,
K. Yamamoto,
K. Abe,
A. Mitsuda,
H. Wada,
T. Uozumi,
S. Yamamoto,
I. Matsuda,
K. Mimura,
H. Wadati
Abstract:
The photoinduced valence dynamics of EuNi$_2$(Si$_{0.21}$Ge$_{0.79}$)$_2$ are investigated using time-resolved X-ray absorption spectroscopy for Eu $M_5$-edge. Through the pump-probe technique with synchrotron X-ray and Ti:sapphire laser pulse, a photoinduced valence transition is observed from Eu$^{3+}$ to Eu$^{2+}$. Because the lifetime of a photoinduced state can be up to 3 ns, a metastable sta…
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The photoinduced valence dynamics of EuNi$_2$(Si$_{0.21}$Ge$_{0.79}$)$_2$ are investigated using time-resolved X-ray absorption spectroscopy for Eu $M_5$-edge. Through the pump-probe technique with synchrotron X-ray and Ti:sapphire laser pulse, a photoinduced valence transition is observed from Eu$^{3+}$ to Eu$^{2+}$. Because the lifetime of a photoinduced state can be up to 3 ns, a metastable state is considered to be realized. By comparing the experimental results with the theoretical calculations, the photoinduced valence transition between Eu 4$f$ and conduction electrons is quantitatively evaluated.
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Submitted 10 May, 2019;
originally announced May 2019.
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Spectroscopic Evaluation of Charge-transfer Do** and Strain in Graphene/MoS2 Heterostructures
Authors:
Rahul Rao,
Ahmad E. Islam,
Simranjeet Singh,
Rajiv Berry,
Roland K Kawakami,
Benji Maruyama,
Jyoti Katoch
Abstract:
It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge transfer do** across the interfaces. Here we use Raman and photoluminescence (PL) spectroscopy to study the interface between monolayer graphene/MoS2 heterostructure…
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It is important to study the van der Waals interface in emerging vertical heterostructures based on layered two-dimensional (2D) materials. Being atomically thin, 2D materials are susceptible to significant strains as well as charge transfer do** across the interfaces. Here we use Raman and photoluminescence (PL) spectroscopy to study the interface between monolayer graphene/MoS2 heterostructures prepared by mechanical exfoliation and layer-by-layer transfer. By using correlation analysis between the Raman modes of graphene and MoS2 we show that both layers are subjected to compressive strain and charge transfer do** following mechanical exfoliation and thermal annealing. Furthermore, we show that both strain and carrier concentration can be modulated in the heterostructures with additional thermal annealing. Our study highlights the importance of considering both mechanical and electronic coupling when characterizing the interface in van der Waals heterostructures, and demonstrates a method to tune their electromechanical properties.
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Submitted 10 May, 2019; v1 submitted 2 May, 2019;
originally announced May 2019.
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Learning to Discover, Ground and Use Words with Segmental Neural Language Models
Authors:
Kazuya Kawakami,
Chris Dyer,
Phil Blunsom
Abstract:
We propose a segmental neural language model that combines the generalization power of neural networks with the ability to discover word-like units that are latent in unsegmented character sequences. In contrast to previous segmentation models that treat word segmentation as an isolated task, our model unifies word discovery, learning how words fit together to form sentences, and, by conditioning…
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We propose a segmental neural language model that combines the generalization power of neural networks with the ability to discover word-like units that are latent in unsegmented character sequences. In contrast to previous segmentation models that treat word segmentation as an isolated task, our model unifies word discovery, learning how words fit together to form sentences, and, by conditioning the model on visual context, how words' meanings ground in representations of non-linguistic modalities. Experiments show that the unconditional model learns predictive distributions better than character LSTM models, discovers words competitively with nonparametric Bayesian word segmentation models, and that modeling language conditional on visual context improves performance on both.
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Submitted 18 June, 2019; v1 submitted 22 November, 2018;
originally announced November 2018.
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Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices
Authors:
Dillon Wong,
Yang Wang,
Wuwei **,
Hsin-Zon Tsai,
Aaron Bostwick,
Eli Rotenberg,
Roland K. Kawakami,
Alex Zettl,
Arash A. Mostofi,
Johannes Lischner,
Michael F. Crommie
Abstract:
We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experim…
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We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations. The second type of H defect is identified as dimerized hydrogen and is created by depositing atomic hydrogen having only thermal energy onto a graphene surface. Scanning tunneling spectroscopy (STS) measurements reveal that hydrogen dimers formed in this way open a new elastic channel in the tunneling conductance between an STM tip and graphene.
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Submitted 24 October, 2018;
originally announced October 2018.
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Physical properties of near-Earth asteroids with a low delta-${\it v}$: Survey of target candidates for the Hayabusa2 mission
Authors:
Sunao Hasegawa,
Daisuke Kuroda,
Kohei Kitazato,
Toshihiro Kasuga,
Tomohiko Sekiguchi,
Naruhisa Takato,
Kentaro Aoki,
Akira Arai,
Young-Jun Choi,
Tetsuharu Fuse,
Hidekazu Hanayama,
Takashi Hattori,
Hsiang-Yao Hsiao,
Nobunari Kashikawa,
Nobuyuki Kawai,
Kyoko Kawakami,
Daisuke Kinoshita,
Steve Larson,
Chi-Sheng Lin,
Seidai Miyasaka,
Naoya Miura,
Shogo Nagayama,
Yu Nagumo,
Setsuko Nishihara,
Yohei Ohba
, et al. (18 additional authors not shown)
Abstract:
Sample return from the near-Earth asteroid known as 25143 Itokawa was conducted as part of the Hayabusa mission, with a large number of scientific findings being derived from the returned samples. Following the Hayabusa mission, Hayabusa2 was planned, targeting sample return from a primitive asteroid. The primary target body of Hayabusa2 was asteroid 162173 Ryugu; however, it was also necessary to…
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Sample return from the near-Earth asteroid known as 25143 Itokawa was conducted as part of the Hayabusa mission, with a large number of scientific findings being derived from the returned samples. Following the Hayabusa mission, Hayabusa2 was planned, targeting sample return from a primitive asteroid. The primary target body of Hayabusa2 was asteroid 162173 Ryugu; however, it was also necessary to gather physical information for backup target selection. Therefore, we examined five asteroids spectroscopically, 43 asteroids spectrophotometrically, and 41 asteroids through periodic analysis. Hence, the physical properties of 74 near-Earth asteroids were obtained, which helped the Hayabusa2 backup target search and, also, furthered understanding of the physical properties of individual asteroids and their origins.
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Submitted 9 October, 2018; v1 submitted 8 October, 2018;
originally announced October 2018.
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Transport Spectroscopy of Sublattice-Resolved Resonant Scattering in Hydrogen-Doped Bilayer Graphene
Authors:
Jyoti Katoch,
Tiancong Zhu,
Denis Kochan,
Simranjeet Singh,
Jaroslav Fabian,
Roland K. Kawakami
Abstract:
We report the experimental observation of sublattice-resolved resonant scattering in bilayer graphene by performing simultaneous cryogenic atomic hydrogen do** and electron transport measurements in ultrahigh vacuum. This allows us to monitor the hydrogen adsorption on the different sublattices of bilayer graphene without atomic-scale microscopy. Specifically, we detect two distinct resonant sca…
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We report the experimental observation of sublattice-resolved resonant scattering in bilayer graphene by performing simultaneous cryogenic atomic hydrogen do** and electron transport measurements in ultrahigh vacuum. This allows us to monitor the hydrogen adsorption on the different sublattices of bilayer graphene without atomic-scale microscopy. Specifically, we detect two distinct resonant scattering peaks in the gate-dependent resistance, which evolve as a function of atomic hydrogen dosage. Theoretical calculations show that one of the peaks originates from resonant scattering by hydrogen adatoms on the α-sublattice (dimer site) while the other originates from hydrogen adatoms on the \b{eta}-sublattice (non-dimer site), thereby enabling a method for characterizing the relative sublattice occupancy via transport measurements. Utilizing this new capability, we investigate the adsorption and thermal desorption of hydrogen adatoms via controlled annealing and conclude that hydrogen adsorption on the \b{eta}-sublattice is energetically favored. Through site-selective desorption from the α-sublattice, we realize hydrogen do** with adatoms primarily on a single sublattice, which is highly desired for generating ferromagnetism.
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Submitted 29 September, 2018;
originally announced October 2018.
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Electronic Structure of Exfoliated and Epitaxial Hexagonal Boron Nitride
Authors:
Roland J. Koch,
Jyoti Katoch,
Simon Moser,
Daniel Schwarz,
Roland K. Kawakami,
Aaron Bostwick,
Eli Rotenberg,
Chris Jozwiak,
Søren Ulstrup
Abstract:
Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes of hBN have been extensively studied using electron transport and optical probes, detailed experimental measurements of the energy- and momentum- dependent elect…
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Hexagonal boron nitride (hBN) is an essential component in van der Waals heterostructures as it provides high quality and weakly interacting interfaces that preserve the electronic properties of adjacent materials. While exfoliated flakes of hBN have been extensively studied using electron transport and optical probes, detailed experimental measurements of the energy- and momentum- dependent electronic excitation spectrum are lacking. Here, we directly determine the full valence band (VB) electronic structure of micron-sized exfoliated flakes of hBN using angle-resolved photoemission spectroscopy with micrometer spatial resolution. We identify the π- and σ-band dispersions, the hBN stacking order and determine a total VB bandwidth of 19.4 eV. We compare these results with electronic structure data for epitaxial hBN on graphene on silicon carbide grown in situ using a borazine precursor. The epitaxial growth and electronic properties are investigated using photoe- mission electron microscopy. Our measurements show that the fundamental electronic properties of hBN are highly dependent on the fabrication strategy.
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Submitted 30 July, 2018;
originally announced July 2018.
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Importance of Paramagnetic Background Subtraction for Determining the Magnetic Moment in Epitaxially Grown Monolayer and Few-Layer van der Waals Magnets
Authors:
Dante J. O'Hara,
Tiancong Zhu,
Roland K. Kawakami
Abstract:
Due to the atomically thin nature of monolayer and few-layer van der Waals magnets, the undesired background signal from the substrate can have significant contribution when characterizing their magnetic properties. This brings challenges in accurately determining the magnitude of the magnetic moment of the epitaxially grown van der Waals magnets on bulk substrates. In this paper, we discuss the i…
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Due to the atomically thin nature of monolayer and few-layer van der Waals magnets, the undesired background signal from the substrate can have significant contribution when characterizing their magnetic properties. This brings challenges in accurately determining the magnitude of the magnetic moment of the epitaxially grown van der Waals magnets on bulk substrates. In this paper, we discuss the impact of the background subtraction method for accurately determining the magnetic moments in such systems. Using the recently reported intrinsic two-dimensional (2D) van der Waals ferromagnet MnSe${_2}$ as an example, we show that a normal diamagnetic background subtraction method in analyzing the bulk magnetometry measurement will result in an unexpectedly large magnetic moment (greater than ~10 μ${_B}$ per formula unit). Through our systematic growth study, we identify an additional paramagnetic signal due to unintentional Mn do** of the substrate. To extract the correct magnetic moment, a paramagnetic background should also be considered. This yields a total magnetic moment of ~4 μ${_B}$ per formula unit in monolayer MnSe${_2}$, which is in close agreement to the theoretically predicted value.
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Submitted 3 July, 2018;
originally announced July 2018.
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Surface Structures of Epitaxial B20 FeGe(-1-1-1) Thin Films via Scanning Tunneling Microscopy
Authors:
J. P. Corbett,
T. Zhu,
A. S. Ahmed,
S. J. Tjung,
J. J. Repicky,
T. Takeuchi,
R. K. Kawakami,
J. A. Gupta
Abstract:
We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffra…
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We grew 20-100 nm thick films of B20 FeGe by molecular beam epitaxy and investigated the surface structures via scanning tunneling microscopy. We observed the atomic resolution of each of the four possible chemical layers in FeGe(-1-1-1). An average hexagonal surface unit cell is observed via scanning tunneling microscopy, low energy electron diffraction, and reflection high energy electron diffraction resulting in a size of ~6.84 Å in agreement with the bulk expectation. Furthermore, the atomic resolution and registry across triple-layer step edges definitively determine the grain orientation as (111) or (-1-1-1). Further verification of the grain orientation is made by Ar+ sputtering FeGe(-1-1-1) surface allowing direct imaging of the subsurface layer.
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Submitted 2 July, 2018;
originally announced July 2018.
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Probing Tunneling Spin Injection into Graphene via Bias Dependence
Authors:
Tiancong Zhu,
Simranjeet Singh,
Jyoti Katoch,
Hua Wen,
Kirill Belashchenko,
Igor Žutić,
Roland K. Kawakami
Abstract:
The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron nitride (hBN) tunnel barriers and direct contacts. A DC bias current applied to the injector electrode induces a strong nonlinear bias dependence of th…
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The bias dependence of spin injection in graphene lateral spin valves is systematically studied to determine the factors affecting the tunneling spin injection efficiency. Three types of junctions are investigated, including MgO and hexagonal boron nitride (hBN) tunnel barriers and direct contacts. A DC bias current applied to the injector electrode induces a strong nonlinear bias dependence of the nonlocal spin signal for both MgO and hBN tunnel barriers. Furthermore, this signal reverses its sign at a negative DC bias for both kinds of tunnel barriers. The analysis of the bias dependence for injector electrodes with a wide range of contact resistances suggests that the sign reversal correlates with bias voltage rather than current. We consider different mechanisms for nonlinear bias dependence and conclude that the energy-dependent spin-polarized electronic structure of the ferromagnetic electrodes, rather than the electrical field-induced spin drift effect or spin filtering effect of the tunnel barrier, is the most likely explanation of the experimental observations.
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Submitted 18 June, 2018;
originally announced June 2018.
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Strong and Tunable Spin Lifetime Anisotropy in Dual-Gated Bilayer Graphene
Authors:
**song Xu,
Tiancong Zhu,
Yunqiu Kelly Luo,
Yuan-Ming Lu,
Roland K. Kawakami
Abstract:
We report the discovery of a strong and tunable spin lifetime anisotropy with excellent spin lifetimes up to 7.8 ns in dual-gated bilayer graphene. Remarkably, this realizes the manipulation of spins in graphene by electrically-controlled spin-orbit fields, which is unexpected due to graphene's weak intrinsic spin-orbit coupling. We utilize both the in-plane magnetic field Hanle precession and obl…
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We report the discovery of a strong and tunable spin lifetime anisotropy with excellent spin lifetimes up to 7.8 ns in dual-gated bilayer graphene. Remarkably, this realizes the manipulation of spins in graphene by electrically-controlled spin-orbit fields, which is unexpected due to graphene's weak intrinsic spin-orbit coupling. We utilize both the in-plane magnetic field Hanle precession and oblique Hanle precession measurements to directly compare the lifetimes of out-of-plane vs. in-plane spins. We find that near the charge neutrality point, the application of a perpendicular electric field opens a band gap and generates an out-of-plane spin-orbit field that stabilizes out-of-plane spins against spin relaxation, leading to a large spin lifetime anisotropy. This intriguing behavior occurs because of the unique spin-valley coupled band structure of bilayer graphene. Our results demonstrate the potential for highly tunable spintronic devices based on dual-gated 2D materials.
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Submitted 6 June, 2018;
originally announced June 2018.
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Topological Dirac Semimetal Na3Bi Films in the Ultrathin Limit via Alternating Layer Molecular Beam Epitaxy
Authors:
Igor V. Pinchuk,
Thaddeus J. Asel,
Andrew Franson,
Tiancong Zhu,
Yuan-Ming Lu,
Leonard J. Brillson,
Ezekiel Johnston-Halperin,
Jay A. Gupta,
Roland K. Kawakami
Abstract:
Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy (MBE) to achieve uniform and continuous single crystal films of Na3Bi(0001) on insulatin…
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Ultrathin films of Na3Bi on insulating substrates are desired for opening a bulk band gap and generating the quantum spin Hall effect from a topological Dirac semimetal, though continuous films in the few nanometer regime have been difficult to realize. Here, we utilize alternating layer molecular beam epitaxy (MBE) to achieve uniform and continuous single crystal films of Na3Bi(0001) on insulating Al2O3(0001) substrates and demonstrate electrical transport on films with 3.8 nm thickness (4 unit cells). The high material quality is confirmed through in situ reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS). In addition, these films are employed as seed layers for subsequent growth by codeposition, leading to atomic layer-by-layer growth as indicated by RHEED intensity oscillations. These material advances facilitate the pursuit of quantum phenomena in thin films of Dirac semimetals.
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Submitted 23 May, 2018; v1 submitted 17 May, 2018;
originally announced May 2018.
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Tuning Spin Dynamics and Localization Near the Metal-Insulator Transition in Fe/GaAs heterostructures
Authors:
Yu-Sheng Ou,
N. J. Harmon,
Patrick Odenthal,
R. K. Kawakami,
M. E. Flatté,
E. Johnston-Halperin
Abstract:
We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing u…
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We present a simultaneous investigation of coherent spin dynamics in both localized and itinerant carriers in Fe/GaAs heterostructures using ultrafast and spin-resolved pump-probe spectroscopy. We find that for excitation densities that push the transient Fermi energy of photocarriers above the mobility edge there exist two distinct precession frequencies in the ob-served spin dynamics, allowing us to simultaneously monitor both localized and itinerant states. For low magnetic fields (below 3 T) the beat frequency between these two excitations evolves linearly, indicating that the nuclear polarization is saturated almost immediately and that the hyperfine coupling to these two states is comparable, despite the 100x enhancement in nuclear polarization provided by the presence of the Fe layer. At higher magnetic fields (above 3 T) the Zeeman energy drives reentrant localization of the photocarriers. Subtracting the constant hyperfine contribution from both sets of data allows us to extract the Lande g-factor for each state and estimate their energy relative to the bottom of the conduction band, yielding -2.16 meV and 17 meV for localized and itinerant states, respectively. This work advances our fundamental understanding of spin-spin interactions between electron and nuclear spin species, as well as between localized and itinerant electronics states, and therefore has implications for future work in both spintronics and quantum information/computation.
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Submitted 12 April, 2018;
originally announced April 2018.
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Spin absorption by in situ deposited nanoscale magnets on graphene spin valves
Authors:
Walid Amamou,
Gordon Stecklein,
Steven J. Koester,
Paul A. Crowell,
Roland K. Kawakami
Abstract:
An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using se…
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An in situ measurement of spin transport in a graphene nonlocal spin valve is used to quantify the spin current absorbed by a small (250 nm $\times$ 750 nm) metallic island. The experiment allows for successive depositions of either Fe or Cu without breaking vacuum, so that the thickness of the island is the only parameter that is varied. Furthermore, by measuring the effect of the island using separate contacts for injection and detection, we isolate the effect of spin absorption from any change in the spin injection and detection mechanisms. As inferred from the thickness dependence, the effective spin current $j_e = \frac{2e}{\hbar} j_s$ absorbed by Fe is as large as $10^8$ A/m$^2$. The maximum value of $j_e$ is limited by the resistance-area product of the graphene/Fe interface, which is as small as 3 $Ωμ$m$^2$. The spin current absorbed by the same thickness of Cu is smaller than for Fe, as expected given the longer spin diffusion length and larger spin resistance of Cu compared to Fe. These results allow for a quantitative assessment of the prospects for achieving spin transfer torque switching of a nanomagnet using a graphene-based nonlocal spin valve.
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Submitted 5 April, 2018;
originally announced April 2018.
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Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit
Authors:
Dante J. O'Hara,
Tiancong Zhu,
Amanda H. Trout,
Adam S. Ahmed,
Yunqiu,
Luo,
Choong Hee Lee,
Mark R. Brenner,
Siddharth Rajan,
Jay A. Gupta,
David W. McComb,
Roland K. Kawakami
Abstract:
Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structu…
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Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe$_2$) monolayer, while for thicker films it could originate from a combination of vdW MnSe$_2$ and/or interfacial magnetism of $α$-MnSe(111). Magnetization measurements of monolayer MnSe$_x$ films on GaSe and SnSe$_2$ epilayers show ferromagnetic ordering with large saturation magnetization of ~ 4 Bohr magnetons per Mn, which is consistent with density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe$_2$. Growing MnSe$_x$ films on GaSe up to high thickness (~ 40 nm) produces $α$-MnSe(111), and an enhanced magnetic moment (~ 2x) compared to the monolayer MnSe$_x$ samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveal an abrupt and clean interface between GaSe(0001) and $α$-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe$_2$ monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.
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Submitted 22 February, 2018;
originally announced February 2018.
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Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
Authors:
**song Xu,
Simranjeet Singh,
Jyoti Katoch,
Guanzhong Wu,
Tiancong Zhu,
Igor Zutic,
Roland K. Kawakami
Abstract:
Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of gr…
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Graphene has remarkable opportunities for spintronics due to its high mobility and long spin diffusion length, especially when encapsulated in hexagonal boron nitride (h-BN). Here, for the first time, we demonstrate gate-tunable spin transport in such encapsulated graphene-based spin valves with one-dimensional (1D) ferromagnetic edge contacts. An electrostatic backgate tunes the Fermi level of graphene to probe different energy levels of the spin-polarized density of states (DOS) of the 1D ferromagnetic contact, which interact through a magnetic proximity effect (MPE) that induces ferromagnetism in graphene. In contrast to conventional spin valves, where switching between high- and low-resistance configuration requires magnetization reversal by an applied magnetic field or a high-density spin-polarized current, we provide an alternative path with the gate-controlled spin inversion in graphene. The resulting tunable MPE employing a simple ferromagnetic metal holds promise for spintronic devices and to realize exotic topological states, from quantum spin Hall and quantum anomalous Hall effects, to Majorana fermions and skyrmions.
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Submitted 21 February, 2018;
originally announced February 2018.
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Modeling the Oblique Spin Precession in Lateral Spin Valves for Accurate Determination of Spin Lifetime Anisotropy: Effect of Finite Contact Resistance and Channel Length
Authors:
Tiancong Zhu,
Roland K Kawakami
Abstract:
The spin lifetime anisotropy is an important quantity for investigating the spin relaxation mechanisms in graphene and in heterostructures of two-dimensional materials. We generalize the diffusive spin transport equations of oblique spin precession in a lateral spin valve with finite contact resistance. This yields a method to determine the spin lifetime anisotropy ratio ξ=τ$_{\perp}$/τ…
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The spin lifetime anisotropy is an important quantity for investigating the spin relaxation mechanisms in graphene and in heterostructures of two-dimensional materials. We generalize the diffusive spin transport equations of oblique spin precession in a lateral spin valve with finite contact resistance. This yields a method to determine the spin lifetime anisotropy ratio ξ=τ$_{\perp}$/τ$_{\parallel}$, which is the ratio between lifetimes of spin polarized perpendicular and parallel to the graphene surface. By solving the steady-state Bloch equations, we show that the line-shape of the oblique spin precession signal can be described with six dimensionless parameters, which can be solved analytically. We demonstrate that the anisotropic spin precession characteristics can be strongly suppressed by contact induced spin relaxation originating from conductance mismatch between the channel material and electrodes. To extract the spin lifetime anisotropy ratio accurately, we develop a closed form equation that includes the effect of finite contact resistance. Furthermore, we demonstrate that in the high contact resistance regime, the minimum channel length required for accurately determining the spin lifetime anisotropy for a sufficiently low external magnetic field is only determined by the diffusion coefficient of the channel material, as opposed to the spin diffusion length. Our work provides an accurate model to extract the spin lifetime anisotropy ratio from the oblique spin precession measurement, and can be used to guide the device design for such measurements.
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Submitted 10 January, 2018;
originally announced January 2018.
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NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase
Authors:
Maxx Q. Arguilla,
Jyoti Katoch,
Kevin Krymowski,
Nicholas D. Cultrara,
**song Xu,
Xiaoxiang Xi,
Amanda Hanks,
Shishi Jiang,
Richard D. Ross,
Roland J. Koch,
Søren Ulstrup,
Aaron Bostwick,
Chris Jozwiak,
Dave McComb,
Eli Rotenberg,
Jie Shan,
Wolfgang Windl,
Roland K. Kawakami,
Joshua E. Goldberger
Abstract:
The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1…
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The discovery of new families of exfoliatable 2D crystals that have diverse sets of electronic, optical, and spin-orbit coupling properties, enables the realization of unique physical phenomena in these few-atom thick building blocks and in proximity to other materials. Herein, using NaSn2As2 as a model system, we demonstrate that layered Zintl phases having the stoichiometry ATt2Pn2 (A = Group 1 or 2 element, Tt = Group 14 tetrel element and Pn = Group 15 pnictogen element) and feature networks separated by van der Waals gaps can be readily exfoliated with both mechanical and liquid-phase methods. We identified the symmetries of the Raman active modes of the bulk crystals via polarized Raman spectroscopy. The bulk and mechanically exfoliated NaSn2As2 samples are resistant towards oxidation, with only the top surface oxidizing in ambient conditions over a couple of days, while the liquid-exfoliated samples oxidize much more quickly in ambient conditions. Employing angle-resolved photoemission spectroscopy (ARPES), density functional theory (DFT), and transport on bulk and exfoliated samples, we show that NaSn2As2 is a highly conducting 2D semimetal, with resistivities on the order of 10-6 Ω m. Due to peculiarities in the band structure, the dominating p-type carriers at low temperature are nearly compensated by the opening of n-type conduction channels as temperature increases. This work further expands the family of exfoliatable 2D materials to layered van der Waals Zintl phases, opening up opportunities in electronics and spintronics.
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Submitted 24 October, 2017;
originally announced October 2017.
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Finding Association Rules by Direct Estimation of Likelihood Ratios
Authors:
Kento Kawakami,
Masato Kikuchi,
Mitsuo Yoshida,
Eiko Yamamoto,
Kyoji Umemura
Abstract:
In this paper, we propose a cost function that corresponds to the mean square errors between estimated values and true values of conditional probability in a discrete distribution. We then obtain the values that minimize the cost function. This minimization approach can be regarded as the direct estimation of likelihood ratios because the estimation of conditional probability can be regarded as th…
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In this paper, we propose a cost function that corresponds to the mean square errors between estimated values and true values of conditional probability in a discrete distribution. We then obtain the values that minimize the cost function. This minimization approach can be regarded as the direct estimation of likelihood ratios because the estimation of conditional probability can be regarded as the estimation of likelihood ratio by the definition of conditional probability. When we use the estimated value as the strength of association rules for data mining, we find that it outperforms a well-used method called Apriori.
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Submitted 25 September, 2017;
originally announced September 2017.
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Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers
Authors:
Walid Amamou,
Igor V. Pinchuk,
Amanda Hanks,
Robert Williams,
Nikolas Antolin,
Adam Goad,
Dante J. O'Hara,
Adam S. Ahmed,
Wolfgang Windl,
David W. McComb,
Roland K. Kawakami
Abstract:
We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt v…
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We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt via AMR is further supported by density functional theory calculations and various control measurements including insertion of a Cu spacer layer to suppress the induced ferromagnetism. In addition, anomalous Hall effect measurements show an out-of-plane magnetic hysteresis loop of the induced ferromagnetic phase with larger coercivity and larger remanence than the bulk CoFe2O4. By demonstrating MPE in Pt/CoFe2O4, these results establish the spinel ferrite family as a promising material for MPE and spin manipulation via proximity exchange fields.
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Submitted 26 June, 2017;
originally announced June 2017.
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Chiral Bobbers and Skyrmions in Epitaxial FeGe/Si(111) Films
Authors:
Adam S. Ahmed,
James Rowland,
Bryan D. Esser,
Sarah Dunsiger,
David W. McComb,
Mohit Randeria,
Roland K. Kawakami
Abstract:
We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin film samples through Lorentz transmission electron microscopy and topological Hall effect, we perform magnetization measurements that reveal an inverse r…
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We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin film samples through Lorentz transmission electron microscopy and topological Hall effect, we perform magnetization measurements that reveal an inverse relationship between film thickness and the slope of the susceptibility (d\c{hi}/dH). We present evidence for the evolution as a function of film thickness, L, from a skyrmion phase for L < LD/2 to a cone phase with chiral bobbers at the interface for L > LD/2, where LD ~ 70 nm is the FeGe pitch length. We show using micromagnetic simulations that chiral bobbers, earlier predicted to be metastable, are in fact the stable ground state in the presence of an additional interfacial Rashba Dzyaloshinskii-Moriya interaction (DMI).
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Submitted 14 April, 2018; v1 submitted 26 June, 2017;
originally announced June 2017.
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Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
Authors:
Yunqiu,
Luo,
**song Xu,
Tiancong Zhu,
Guanzhong Wu,
Elizabeth J. McCormick,
Wenbo Zhan,
Mahesh R. Neupane,
Roland K. Kawakami
Abstract:
Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room tempera…
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Two dimensional (2D) materials provide a unique platform for spintronics and valleytronics due to the ability to combine vastly different functionalities into one vertically-stacked heterostructure, where the strengths of each of the constituent materials can compensate for the weaknesses of the others. Graphene has been demonstrated to be an exceptional material for spin transport at room temperature, however it lacks a coupling of the spin and optical degrees of freedom. In contrast, spin/valley polarization can be efficiently generated in monolayer transition metal dichalcogenides (TMD) such as MoS2 via absorption of circularly-polarized photons, but lateral spin or valley transport has not been realized at room temperature. In this letter, we fabricate monolayer MoS2/few-layer graphene hybrid spin valves and demonstrate, for the first time, the opto-valleytronic spin injection across a TMD/graphene interface. We observe that the magnitude and direction of spin polarization is controlled by both helicity and photon energy. In addition, Hanle spin precession measurements confirm optical spin injection, spin transport, and electrical detection up to room temperature. Finally, analysis by a one-dimensional drift-diffusion model quantifies the optically injected spin current and the spin transport parameters. Our results demonstrate a 2D spintronic/valleytronic system that achieves optical spin injection and lateral spin transport at room temperature in a single device, which paves the way for multifunctional 2D spintronic devices for memory and logic applications.
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Submitted 25 May, 2017;
originally announced May 2017.