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Specific heat analyses on optical-phonon-derived uniaxial negative thermal expansion system $Tr$Zr$_{2}$ ($Tr$ = Fe and Co$_{1-x}$Ni$_{x}$)
Authors:
Yuto Watanabe,
Ceren Tayran,
Md. Riad Kasem,
Aichi Yamashita,
Mehmet Çakmak,
Takayoshi Katase,
Yoshikazu Mizuguchi
Abstract:
Recently, huge uniaxial negative thermal expansion (NTE) along a $c$-axis has been observed in transition-metal ($Tr$) zirconides $Tr$Zr$_{2}$ with a tetragonal CuAl$_{2}$-type structure. In a recent study on FeZr$_{2}$ [M. Xu et al., Nat. Commun. 14, 4439 (2023)], the importance of optical phonons to the emergence of the $c$-axis NTE in FeZr$_{2}$ has been proposed. In this study, the physical pr…
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Recently, huge uniaxial negative thermal expansion (NTE) along a $c$-axis has been observed in transition-metal ($Tr$) zirconides $Tr$Zr$_{2}$ with a tetragonal CuAl$_{2}$-type structure. In a recent study on FeZr$_{2}$ [M. Xu et al., Nat. Commun. 14, 4439 (2023)], the importance of optical phonons to the emergence of the $c$-axis NTE in FeZr$_{2}$ has been proposed. In this study, the physical properties of $Tr$Zr$_{2}$ ($Tr$ = Fe and Co$_{1-x}$Ni$_{x}$) have been studied by specific heat, sound velocity measurements, and theoretical phonon calculations to discuss the importance of optical phonons to the emergence of the $c$-axis NTE in CoZr$_{2}$ and FeZr$_{2}$. From analyses of lattice specific heat, we found that Ni substitution results in a systematic decrease in oscillator strength for the Einstein modes with 8.74 meV (CoZr$_{2}$). From phonon calculations, the low-energy optical phonon branches at the $Γ$ point were observed for CoZr$_{2}$ and FeZr$_{2}$ with $c$-axis NTE, but not in NiZr$_{2}$ with positive thermal expansion. The enhancement of phonon density of states near the above-mentioned optical phonon energy in CoZr$_{2}$ and FeZr$_{2}$ is consistent with the specific heat analyses. We propose the importance of the low-energy optical phonons to the emergence of the $c$-axis NTE in TrZr$_{2}$.
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Submitted 26 June, 2024;
originally announced June 2024.
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High entropy effect on thermoelectric properties of nonequilibrium cubic phase of AgBiSe2-2xSxTex with x = 0-0.6
Authors:
Asato Seshita,
Aichi Yamashita,
Takayoshi Katase,
Yoshikazu Mizuguchi
Abstract:
Silver bismuth diselenide (AgBiSe2) has much attention as an efficient thermoelectric material due to its low thermal conductivity. However, AgBiSe2 exhibits multiple crystal structural transitions with temperature, and high thermoelectric performance was realized only in high-temperature cubic phase. We previously reported the stabilization of cubic phase in AgBiSe2-2xSxTex with x = 0.6-0.8 at ro…
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Silver bismuth diselenide (AgBiSe2) has much attention as an efficient thermoelectric material due to its low thermal conductivity. However, AgBiSe2 exhibits multiple crystal structural transitions with temperature, and high thermoelectric performance was realized only in high-temperature cubic phase. We previously reported the stabilization of cubic phase in AgBiSe2-2xSxTex with x = 0.6-0.8 at room temperature by high-entropy-alloy (HEA) approach. The cubic HE-type AgBiSe0.8S0.6Te0.6 achieved a high ZT value of 0.8 at 748 K. In this paper, we succeeded in stabilizing the cubic phase in AgBiSe2-2xSxTex with x = 0-0.6 by ice-quenching method, and investigated the HE effect on the thermoelectric properties. Cubic AgBiSe2-2xSxTex exhibited n-type conductivity from 300 K to 10 K. We found that electronic conductivity was largely increased around room temperature with increasing the amount of S and Te, although carrier concentration showed almost the same values. The S and Te substitutions induced the variation of band structure, resulting in the carrier mobility enhancement. Furthermore, thermal conducutivity showed reduction tendency with increasing the amount of S and Te due to enhancement of phonon scattering. Simultaneous electronic conductivity increase and thermal conductivity reduction resulted in the systematic improvement of the ZT values for HE-type cubic AgBiSe2-2xSxTex.
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Submitted 4 May, 2024;
originally announced May 2024.
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Stabilization and high thermoelectric performance of high-entropy-type cubic AgBi(S, Se, Te)2
Authors:
Asato Seshita,
Aichi Yamashita,
Takeshi Fujita,
Takayoshi Katase,
Akira Miura,
Yuki Nakahira,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
As thermoelectric generators can convert waste heat into electricity, they play an important role in energy harvesting. The metal chalcogenide AgBiSe2 is one of the high-performance thermoelectric materials with low lattice thermal conductivity (klat), but it exhibits temperature-dependent crystal structural transitions from hexagonal to rhombohedral, and finally a cubic phase as the temperature r…
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As thermoelectric generators can convert waste heat into electricity, they play an important role in energy harvesting. The metal chalcogenide AgBiSe2 is one of the high-performance thermoelectric materials with low lattice thermal conductivity (klat), but it exhibits temperature-dependent crystal structural transitions from hexagonal to rhombohedral, and finally a cubic phase as the temperature rises. The high figure-of-merit ZT is obtained only for the high-temperature cubic phase. In this study, we utilized the high-entropy-alloy (HEA) concept for AgBiSe2 to stabilize the cubic phase throughout the entire temperature range with enhanced thermoelectric performance. We synthesized high-entropy-type AgBiSe2-2xSxTex bulk polycrystals and realized the stabilization of the cubic phase from room temperature to 800 K for x > 0.6. The ultra-low klat at of 0.30 Wm^-1K^-1 and the high peak ZT 0.9 at around 750 K were realized for cubic AgBiSe2-2xSxTex without carrier tuning. In addition, the average ZT value of x = 0.6 and 0.7 for the temperature range of 360-750 K increased to 0.38 and 0.40, respectively, which are comparable to the highest previously reported values.
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Submitted 1 April, 2024;
originally announced April 2024.
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Superconductivity in In-doped AgPbBiTe3 compounds synthesized by high-pressure synthesis
Authors:
Takahiro Sawahara,
Hiroto Arima,
Takayoshi Katase,
Aichi Yamashita,
Ryuji Higashinaka,
Yoshikazu Mizuguchi
Abstract:
NaCl-type metal tellurides (MTe) have been widely studied due to unique physical properties. We investigated the In-do** effects on structural and physical properties of Na-Cl type (AgPbBi)(1-x)/3InxTe and the superconducting properties of the In-doped samples. Polycrystalline samples with x = 0-0.5 were synthesized by utilizing high-pressure synthesis. For x = 0.2-0.5, superconductivity was obs…
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NaCl-type metal tellurides (MTe) have been widely studied due to unique physical properties. We investigated the In-do** effects on structural and physical properties of Na-Cl type (AgPbBi)(1-x)/3InxTe and the superconducting properties of the In-doped samples. Polycrystalline samples with x = 0-0.5 were synthesized by utilizing high-pressure synthesis. For x = 0.2-0.5, superconductivity was observed in magnetization measurements, where the highest transition temperature (Tc) was 2.8 K for x = 0.4. We measured specific heat for x = 0.4 and confirmed the bulk nature of the superconductivity. The evolution of the Seebeck coefficient and lattice constant by In do** suggests that In valence state is In+3, and the In do** generates electron carriers in the (AgPbBi)(1-x)/3InxTe system.
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Submitted 14 June, 2023;
originally announced June 2023.
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Tuning of Carrier Concentration and Superconductivity in High-Entropy-Alloy-Type Metal Telluride (AgSnPbBi)(1-x)/4InxTe
Authors:
Md. Riad Kasem,
Ryota Ishii,
Takayoshi Katase,
Osuke Miura,
Yoshikazu Mizuguchi
Abstract:
High-entropy-alloy-type (HEA-type) compound superconductors have been drawing much attention as a new class of exotic superconductors with local structural inhomogeneity. NaCl-type (Ag,In,Sn,Pb,Bi)Te is a typical HEA-type superconductor, but the carrier do** mechanism had been unclear. In this study, we synthesized (Ag,In,Sn,Pb,Bi)Te with various In concentration using high-pressure synthesis: t…
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High-entropy-alloy-type (HEA-type) compound superconductors have been drawing much attention as a new class of exotic superconductors with local structural inhomogeneity. NaCl-type (Ag,In,Sn,Pb,Bi)Te is a typical HEA-type superconductor, but the carrier do** mechanism had been unclear. In this study, we synthesized (Ag,In,Sn,Pb,Bi)Te with various In concentration using high-pressure synthesis: the studied system is (AgSnPbBi)(1-x)/4InxTe (x = 0-0.4). Single-phase samples were obtained for x = 0-0.3. A semiconductor-like temperature dependence of resistivity was observed for x = 0, while superconductivity appeared for the In-doped samples. The highest transition temperature (Tc) was 3.0 K for x = 0.3. The Seebeck coefficient decreases with increase of x, which suggests that In3+ generates electron carriers in (AgSnPbBi)(1-x)/4InxTe. Tuning of carrier concentration and superconducting properties of (Ag,In,Sn,Pb,Bi)Te would be useful for further investigation of exotic superconductivity in the HEA-type compound.
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Submitted 1 April, 2022;
originally announced April 2022.
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Superconductivity in In-doped AgSnBiTe3 with possible band inversion
Authors:
Tsubasa Mitobe,
Kazuhisa Hoshi,
Md. Riad Kasem,
Ryosuke Kiyama,
Hidetomo Usui,
Aichi Yamashita,
Ryuji Higashinaka,
Tatsuma D. Matsuda,
Yuji Aoki,
Takayoshi Katase,
Yosuke Goto,
Yoshikazu Mizuguchi
Abstract:
We investigated the chemical pressure effects on structural and electronic properties of SnTe-based material using partial substitution of Sn by Ag0.5Bi0.5, which results in lattice shrinkage. For Sn1-2x(AgBi)xTe, single-phase polycrystalline samples were obtained with a wide range of x. On the basis of band calculations, we confirmed that the Sn1-2x(AgBi)xTe system is basically possessing band in…
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We investigated the chemical pressure effects on structural and electronic properties of SnTe-based material using partial substitution of Sn by Ag0.5Bi0.5, which results in lattice shrinkage. For Sn1-2x(AgBi)xTe, single-phase polycrystalline samples were obtained with a wide range of x. On the basis of band calculations, we confirmed that the Sn1-2x(AgBi)xTe system is basically possessing band inversion and topologically preserved electronic states. To explore new superconducting phases related to the topological electronic states, we investigated the In-do** effects on structural and superconducting properties for x = 0.33 (AgSnBiTe3). For (AgSnBi)(1-y)/3InyTe, single-phase polycrystalline samples were obtained for y = 0-0.5 by high-pressure synthesis. Superconductivity was observed for y = 0.2-0.5. For y = 0.4, the transition temperature estimated from zero-resistivity state was 2.4 K, and the specific heat investigation confirmed the emergence of bulk superconductivity. Because the presence of band inversion was theoretically predicted, and the parameters obtained from specific heat analyses were comparable to In-doped SnTe, we expect that the (AgSnBi)(1-y)/3InyTe and other (Ag,In,Sn,Bi)Te phases are candidate systems for studying topological superconductivity.
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Submitted 11 November, 2021; v1 submitted 15 September, 2021;
originally announced September 2021.
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Photoinduced Transient States of Antiferromagnetic Orderings in La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ and SrFeO${}_{3}$ Thin Films Observed through Time-resolved Resonant Soft X-ray Scattering
Authors:
Kohei Yamamoto,
Tomoyuki Tsuyama,
Suguru Ito,
Kou Takubo,
Iwao Matsuda,
Niko Pontius,
Christian Schüßler-Langeheine,
Makoto Minohara,
Hiroshi Kumigashira,
Yuichi Yamasaki,
Hironori Nakao,
Youichi Murakami,
Takayoshi Katase,
Toshio Kamiya,
Hiroki Wadati
Abstract:
The relationship between the magnetic interaction and photoinduced dynamics in antiferromagnetic perovskites is investigated in this study. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ thin films, commensurate spin ordering is accompanied by charge disproportionation, whereas SrFeO${}_{3}$ thin films show incommensurate helical antiferromagnetic spin ordering due to increased ferromagnetic coupling comp…
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The relationship between the magnetic interaction and photoinduced dynamics in antiferromagnetic perovskites is investigated in this study. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$ thin films, commensurate spin ordering is accompanied by charge disproportionation, whereas SrFeO${}_{3}$ thin films show incommensurate helical antiferromagnetic spin ordering due to increased ferromagnetic coupling compared to La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$. To understand the photoinduced spin dynamics in these materials, we investigate the spin ordering through time-resolved resonant soft X-ray scattering. In La${}_{1/3}$Sr${}_{2/3}$FeO${}_{3}$, ultrafast quenching of the magnetic ordering within 130 fs through a nonthermal process is observed, triggered by charge transfer between the Fe atoms. We compare this to the photoinduced dynamics of the helical magnetic ordering of SrFeO${}_{3}$. We find that the change in the magnetic coupling through optically induced charge transfer can offer an even more efficient channel for spin-order manipulation.
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Submitted 29 March, 2021;
originally announced March 2021.
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Hard x-ray photoemission study on strain effect in LaNiO$_3$ thin films
Authors:
K. Yamagami,
K. Ikeda,
A. Hariki,
Y. Zhang,
A. Yasui,
Y. Takagi,
Y. Hotta,
T. Katase,
T. Kamiya,
H. Wadati
Abstract:
The strain effect from a substrate is an important experimental route to control electronic and magnetic properties in transition-metal oxide (TMO) thin films. Using hard x-ray photoemission spectroscopy, we investigate the strain dependence of the valence states in LaNiO$_{3}$ thin films, strongly correlated perovskite TMO, grown on four substrates: LaAlO$_{3}$, (LaAlO$_{3}$)$_{0.3}$(SrAl…
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The strain effect from a substrate is an important experimental route to control electronic and magnetic properties in transition-metal oxide (TMO) thin films. Using hard x-ray photoemission spectroscopy, we investigate the strain dependence of the valence states in LaNiO$_{3}$ thin films, strongly correlated perovskite TMO, grown on four substrates: LaAlO$_{3}$, (LaAlO$_{3}$)$_{0.3}$(SrAl$_{0.5}$Ta$_{0.5}$O$_{3}$)$_{0.7}$, SrTiO$_{3}$, and DyScO$_{3}$. A Madelung potential analysis of core-level spectra suggests that the point-charge description is valid for the La ions while it breaks down for Ni and O ions due to a strong covalent bonding between the two. A clear x-ray photon-energy dependence of the valence spectra is analyzed by the density functional theory, which points to a presence of the La 5$p$ state near the Fermi level.
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Submitted 16 March, 2021;
originally announced March 2021.
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Crystal structure built from a GeO$_6$-GeO$_5$ polyhedra network with high thermal stability: $β$-SrGe$_2$O$_5$
Authors:
Christian A. Niedermeier,
Jun-ichi Yamaura,
Jiazhen Wu,
Xinyi He,
Takayoshi Katase,
Hideo Hosono,
Toshio Kamiya
Abstract:
By tackling the challenge of extending transparent oxide semiconductors to Ge based oxides, we have found a not-yet-reported crystal structure, named $β$-SrGe$_2$O$_5$, which is composed of edge-sharing GeO$_6$ octahedra interconnected by GeO$_5$ bipyramids. Single crystals were successfully grown by the high-pressure flux method. $β$-SrGe$_2$O$_5$ has a band gap of 5.2 eV and a dispersive conduct…
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By tackling the challenge of extending transparent oxide semiconductors to Ge based oxides, we have found a not-yet-reported crystal structure, named $β$-SrGe$_2$O$_5$, which is composed of edge-sharing GeO$_6$ octahedra interconnected by GeO$_5$ bipyramids. Single crystals were successfully grown by the high-pressure flux method. $β$-SrGe$_2$O$_5$ has a band gap of 5.2 eV and a dispersive conduction band with an effective mass as small as 0.34 times the electron rest mass, which originates from the edge-sharing GeO$_6$ octahedra network. Although known compounds with octahedral GeO$_6$ coordination are commonly unstable at atmospheric pressure and elevated temperatures, $β$-SrGe$_2$O$_5$ exhibits thermal stability up to 700 $^\circ$C.
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Submitted 18 November, 2020;
originally announced November 2020.
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Shallow Valence Band of Rutile GeO$_2$ and P-type Do**
Authors:
Christian A. Niedermeier,
Keisuke Ide,
Takayoshi Katase,
Hideo Hosono,
Toshio Kamiya
Abstract:
GeO$_2$ has an $α$-quartz-type crystal structure with a very wide fundamental band gap of 6.6 eV and is a good insulator. Here we find that the stable rutile-GeO$_2$ polymorph with a 4.6 eV band gap has a surprisingly low $\sim$6.8 eV ionization potential, as predicted from the band alignment using first-principles calculations. Because of the short O$-$O distances in the rutile structure containi…
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GeO$_2$ has an $α$-quartz-type crystal structure with a very wide fundamental band gap of 6.6 eV and is a good insulator. Here we find that the stable rutile-GeO$_2$ polymorph with a 4.6 eV band gap has a surprisingly low $\sim$6.8 eV ionization potential, as predicted from the band alignment using first-principles calculations. Because of the short O$-$O distances in the rutile structure containing cations of small effective ionic radii such as Ge$^{4+}$, the antibonding interaction between O 2p orbitals raises the valence band maximum energy level to an extent that hole do** appears feasible. Experimentally, we report the flux growth of $1.5 \times 1.0 \times 0.8$ mm$^3$ large rutile GeO$_2$ single crystals and confirm the thermal stability for temperatures up to $1021 \pm 10~^\circ$C. X-ray fluorescence spectroscopy shows the inclusion of unintentional Mo impurities from the Li$_2$O$-$MoO$_3$ flux, as well as the solubility of Ga in the r-GeO$_2$ lattice as a prospective acceptor dopant. The resistance of the Ga- and Mo-codoped r-GeO$_2$ single crystals is very high at room temperature, but it decreases by 2-3 orders of magnitude upon heating to 300 $^\circ$C, which is attributed to thermally-activated p-type conduction.
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Submitted 17 November, 2020;
originally announced November 2020.
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Superconductivity at 48 K of heavily hydrogen-doped SmFeAsO epitaxial films grown by topotactic chemical reaction using CaH2
Authors:
Jumpei Matsumoto,
Kota Hanzawa,
Masato Sasase,
Silvia Haindl,
Takayoshi Katase,
Hidenori Hiramatsu,
Hideo Hosono
Abstract:
High-critical-temperature (Tc) superconductivity at 48 K is reported for hydrogen-doped SmFeAsO epitaxial films on MgO single-crystal substrates. The key processes are pulsed laser deposition to grow undoped SmFeAsO epitaxial films and subsequent topotactic chemical reaction using CaH2 powders under evacuated silica-glass ampule atmosphere. Based on this post-deposition thermal annealing treatment…
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High-critical-temperature (Tc) superconductivity at 48 K is reported for hydrogen-doped SmFeAsO epitaxial films on MgO single-crystal substrates. The key processes are pulsed laser deposition to grow undoped SmFeAsO epitaxial films and subsequent topotactic chemical reaction using CaH2 powders under evacuated silica-glass ampule atmosphere. Based on this post-deposition thermal annealing treatment that we have developed, a maximum hydrogen concentration x = ~0.35 was realized in SmFeAs(O1-xHx). Disordered hydrogen-substitution at O sites is experimentally confirmed directly by atomic-scale microstructural observations. Magnetization measurement validates the bulk nature of the high-Tc superconductivity in the films. This method will become an effective and general method to fabricate various high-quality oxyhydride epitaxial films.
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Submitted 3 October, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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Superconductivity in La1-xCexOBiSSe: carrier do** by mixed valence of Ce ions
Authors:
Ryota Sogabe,
Yosuke Goto,
A. Nishida,
Takayoshi Katase,
Yoshikazu Mizuguchi
Abstract:
We report the effects of Ce substitution on structural, electronic, and magnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9), which are newly obtained in this study. Metallic conductivity was observed for x > 0.1 because of electron carriers induced by mixed valence of Ce ions, as revealed by bond valence sum calculation and magnetization measurements. Zero resistivity an…
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We report the effects of Ce substitution on structural, electronic, and magnetic properties of layered bismuth-chalcogenide La1-xCexOBiSSe (x = 0-0.9), which are newly obtained in this study. Metallic conductivity was observed for x > 0.1 because of electron carriers induced by mixed valence of Ce ions, as revealed by bond valence sum calculation and magnetization measurements. Zero resistivity and clear diamagnetic susceptibility were obtained for x = 0.2-0.6, indicating the emergence of bulk superconductivity in these compounds. Dome-shaped superconductivity phase diagram with the highest transition temperature (Tc) of 3.1 K, which is slightly lower than that of F-doped LaOBiSSe (Tc = 3.7 K), was established. The present study clearly shows that the mixed valence of Ce ions can be utilized as an alternative approach for electron-do** in layered bismuth-chalcogenides to induce superconductivity.
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Submitted 6 June, 2018; v1 submitted 4 September, 2017;
originally announced September 2017.
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Leakage-free electrolytes with different conductivity for non-volatile memory device utilizing insulator/metal ferromagnet transition of SrCoOx
Authors:
Takayoshi Katase,
Yuki Suzuki,
Hiromichi Ohta
Abstract:
The electrochemical switching of SrCoOx-based non-volatile memory with thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivity (s) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO 7Al2O3 film with nanoporous structure (CAN), but the electrochemical oxidation/reduction of SrCoOx l…
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The electrochemical switching of SrCoOx-based non-volatile memory with thin-film-transistor structure was examined by using liquid-leakage-free electrolytes with different conductivity (s) as the gate insulator. We first examined leakage-free water, which is incorporated in the amorphous (a-) 12CaO 7Al2O3 film with nanoporous structure (CAN), but the electrochemical oxidation/reduction of SrCoOx layer required the application of high gate voltage (Vg) up to 20 V for a very long retention-time (t) 40 minutes, primarily due to the low s (2.0 x 10-8 S cm-1 at RT) of leakage-free water.We then controlled the s of leakage-free electrolyte, infiltrated in the a-NaxTaO3 film with nanopillar array structure, from 8.0 x 10-8 S cm-1 to 2.5 x 10-6 S cm-1 at RT by changing the x = 0.01-1.0. As the result, the t, required for the metallization of SrCoOx layer under small Vg = -3 V, becomes two orders of magnitude shorter with increase of the s of the a-NaxTaO3 leakage-free electrolyte. These results indicate that the ion migration in the leakage-free electrolyte is the rate-determining step for the electrochemical switching, compared to the other electrochemical process, and the high s of the leakage-free electrolyte is the key factor for the development of the non-volatile SrCoOx-based electro-magnetic phase switching device.
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Submitted 31 May, 2017;
originally announced June 2017.
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Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate
Authors:
Takayoshi Katase,
Kenji Endo,
Hiromichi Ohta
Abstract:
Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of VO2 channel, and two-orde…
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Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-terminal thin-film-transistor-type device with water-infiltrated glass as the gate insulator. Alternative positive/negative gate-voltage applications induce the reversible protonation/deprotonation of VO2 channel, and two-orders of magnitude modulation of sheet-resistance and 49% modulation of IR-transmittance were simultaneously demonstrated at room temperature by the metal-insulator phase conversion of VO2 in a non-volatile manner. The present device is operable by the room-temperature protonation in all-solid-state structure, and thus it will provide a new gateway to future energy-saving technology as advanced smart window.
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Submitted 29 April, 2017;
originally announced May 2017.
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Current-induced effective magnetic field in a half-metallic oxide La0.67Sr0.33MnO3
Authors:
Michihiko Yamanouchi,
Tatsuro Oyamada,
Takayoshi Katase,
Hiromichi Ohta
Abstract:
We investigated current-induced effective magnetic field Heff in half-metallic oxide La0.67Sr0.33MnO3 (LSMO) films with various thicknesses by using the planar Hall effect. Applying in-plane current to the LSMO films exerted an in-plane Heff orthogonal to the current direction on magnetization. The Heff magnitude increased with increasing current magnitude, and the direction reversed when the appl…
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We investigated current-induced effective magnetic field Heff in half-metallic oxide La0.67Sr0.33MnO3 (LSMO) films with various thicknesses by using the planar Hall effect. Applying in-plane current to the LSMO films exerted an in-plane Heff orthogonal to the current direction on magnetization. The Heff magnitude increased with increasing current magnitude, and the direction reversed when the applied current switched to opposite sign. Assuming that a 6.5-u.c. insulating layer is created in the LSMO, the values of Heff observed in devices with three different LSMO thicknesses were almost scaled with current density, evaluated from the effective LSMO thickness excluding the insulating layer, suggesting that Heff is induced in the LSMO bulk.
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Submitted 19 April, 2017;
originally announced April 2017.
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Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$ and SrTiO$_3$
Authors:
Christian A. Niedermeier,
Yu Kumagai,
Keisuke Ide,
Takayoshi Katase,
Fumiyasu Oba,
Hideo Hosono,
Toshio Kamiya
Abstract:
Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflect…
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Cubic perovskite oxides are emerging high-mobility transparent conducting oxides (TCOs), but Ge-based TCOs had not been known until the discovery of metastable cubic SrGeO$_3$. $0.5 \times 0.4 \times 0.2$-mm$^3$ large single crystals of the cubic SrGeO$_3$ perovskite were successfully synthesized employing the high-pressure flux method. The phonon spectrum is determined from the IR optical reflectance and Raman-scattering analysis to evaluate the electron transport governed by optical phonon scattering. A calculated room-temperature mobility on the order of $3.9 \times 10^2$ cm$^2$V$^{-1}$s$^{-1}$ is obtained, identifying cubic SrGeO$_3$ as one of the most promising TCOs. Employing classical phonon theory and a combined experimental-theoretical approach, a comprehensive analysis of the intrinsic electron mobility in the cubic perovskite semiconductors SrGeO$_3$, BaSnO$_3$, and SrTiO$_3$ is provided based on the magnitude of polarization and eigenfrequency of optically active phonons.
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Submitted 24 March, 2020; v1 submitted 5 December, 2016;
originally announced December 2016.
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Reversibly switchable electromagnetic device with leakage-free electrolyte
Authors:
Takayoshi Katase,
Yuki Suzuki,
Hiromichi Ohta
Abstract:
Electrical control of oxygen off-stoichiometry of transition-metal oxides at room temperature is a desired strategy to simultaneously switch the electrical conductance and magnetism of the device. Although the use of the electrochemical redox reaction of transition-metal oxides is the most reasonable way to achieve the aforementioned switch, such a device has not been realized because of the lack…
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Electrical control of oxygen off-stoichiometry of transition-metal oxides at room temperature is a desired strategy to simultaneously switch the electrical conductance and magnetism of the device. Although the use of the electrochemical redox reaction of transition-metal oxides is the most reasonable way to achieve the aforementioned switch, such a device has not been realized because of the lack of a leakage-free liquid electrolyte. Here, we demonstrate an electromagnetic device that can reversibly switch a transition-metal oxide from an insulator/non-magnet to a metal/magnet (Tc=275 K) using a newly developed 'leakage-free electrolyte', incorporated in an amorphous NaTaO3 nanopillar array film. Reversible switching occurs electrically, obeying Faraday's laws of electrolysis, under a DC voltage of +(-)3 V within 2-3 s at RT. The present electromagnetic device does not have the drawback of liquid leakage, and the leakage-free electrolyte provides a novel design concept for practical electromagnetic devices using transition-metal oxides.
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Submitted 4 April, 2016;
originally announced April 2016.
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Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion
Authors:
Takayoshi Katase,
Kenji Endo,
Hiromichi Ohta
Abstract:
Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001) alpha-Al2O3, (11-20) alpha-Al2O3, and (001) TiO2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from ~200 to 23 microV K-…
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Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin films with controlled lattice distortion was investigated by thermopower measurements. VO2 epitaxial films with different crystallographic orientations, grown on (0001) alpha-Al2O3, (11-20) alpha-Al2O3, and (001) TiO2 substrates, showed significant decrease of absolute value of Seebeck coefficient (S) from ~200 to 23 microV K-1, along with a sharp drop in electrical resistivity (rho), due to the transition from an insulator to a metal. The MI transition temperatures observed both in rho (Trho) and S (TS) for the VO2 films systematically decrease with lattice shrinkage in the pseudo-rutile structure along c-axis, accompanying a broadening of the MI transition temperature width. Moreover, the onset TS, where the insulating phase starts to become metallic, is much lower than onset Trho. This difference is attributed to the sensitivity of S for the detection of hidden metallic domains in the majority insulating phase, which cannot be detected in rho-measurements. Consequently, S-measurements provide a straightforward and excellent approach for a deeper understanding of the MI transition process in VO2.
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Submitted 9 July, 2015;
originally announced July 2015.
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Thermopower analysis of the electronic structure around metal-insulator transition in V1-xWxO2
Authors:
Takayoshi Katase,
Kenji Endo,
Hiromichi Ohta
Abstract:
Electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x = 0-0.06) grown on alfa-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S|-values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in good linear relation with MI transition temperatures. |…
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Electronic structure across the metal-insulator (MI) transition of electron-doped V1-xWxO2 epitaxial films (x = 0-0.06) grown on alfa-Al2O3 substrates was studied by means of thermopower (S) measurements. Significant increase of |S|-values accompanied by MI transition was observed, and the transition temperatures of S (TS) decreased with x in good linear relation with MI transition temperatures. |S| values of V1-xWxO2 films at T > TS were constant at low values of 23 microV K-1 independently of x, which reflects a metallic electronic structure, whereas, those at T < TS almost linearly decreased with logarithmic W-concentrations. The gradient of -213 microV K-1 agrees well with -kB/e*ln10 (-198 microV K-1), suggesting that V1-xWxO2 films have insulating electronic structures with a parabolic density of state around the conduction band bottom.
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Submitted 6 October, 2014;
originally announced October 2014.
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Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition
Authors:
Hidenori Hiramatsu,
Hikaru Sato,
Takayoshi Katase,
Toshio Kamiya,
Hideo Hosono
Abstract:
We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal…
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We heteroepitaxially grew cobalt-doped BaFe2As2 films on (La,Sr)(Al,Ta)O3 single-crystal substrates by pulsed laser deposition using four different wavelengths and investigated how the excitation wavelength and pulse energy affected growth. Using the tilting and twisting angles of X-ray diffraction rocking curves, we quantitatively analyzed the crystallinity of each film. We found that the optimal deposition rate, which could be tuned by pulse energy, was independent of laser wavelength. The high-quality film grown at the optimal pulse energy (i.e., the optimum deposition rate) exhibited high critical current density over 1 MA/cm2 irrespective of the laser wavelength.
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Submitted 1 May, 2014; v1 submitted 21 April, 2014;
originally announced April 2014.
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Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2
Authors:
Takayoshi Katase,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono
Abstract:
A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transi…
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A1-xFe2-ySe2 (A = K, Cs, Rb, Tl) are recently discovered iron-based superconductors with critical temperatures (Tc) ranging up to 32 K. Their parent phases have unique properties when compared with other iron-based superconductors; e.g., their crystal structures include ordered Fe vacancies, their normal states are antiferromagnetic (AFM) insulating phases, and they have extremely high Néel transition temperatures. However, control of carrier do** into the parent AFM insulators has been difficult due to their intrinsic phase separation. Here, we fabricated an Fe-vacancy-ordered TlFe1.6Se2 insulating epitaxial film with an atomically flat surface and examined its electrostatic carrier do** using an electric double-layer transistor (EDLT) structure with an ionic liquid gate. The positive gate voltage gave conductance modulation of three orders of magnitude at 25 K, and further induced and manipulated a phase transition; i.e., delocalized carrier generation by electrostatic do** is the origin of the phase transition. This is the first demonstration, to the authors' knowledge, of an EDLT using a Mott insulator iron-selenide channel and opens a way to explore high-Tc superconductivity in iron-based layered materials, where carrier do** by conventional chemical means is difficult.
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Submitted 4 March, 2014; v1 submitted 12 February, 2014;
originally announced February 2014.
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Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films
Authors:
Takayoshi Katase,
Hikaru Sato,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono
Abstract:
Applying an external pressure to indirectly electron-doped 122-type (Ba1-xLax)Fe2As2 epitaxial films enhances the superconducting critical temperature (Tc) up to 30.3 K. Different from the other family compounds, the Tc is enhanced not only in the under-doped region but also in the optimally doped and over-doped regions. Narrowing of the superconducting transition width and an increase in the carr…
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Applying an external pressure to indirectly electron-doped 122-type (Ba1-xLax)Fe2As2 epitaxial films enhances the superconducting critical temperature (Tc) up to 30.3 K. Different from the other family compounds, the Tc is enhanced not only in the under-doped region but also in the optimally doped and over-doped regions. Narrowing of the superconducting transition width and an increase in the carrier density take place simultaneously in the whole do** region, except at the heavily over-doped limit. This characteristic is unique to and observed only in (Ba1-xLax)Fe2As2, in which the La do** is stabilized via non-equilibrium growth of the vapor phase epitaxy, among the 122-type iron-based superconductors, AFe2As2 (A = Ba, Sr, and Ca).
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Submitted 11 October, 2013; v1 submitted 26 September, 2013;
originally announced September 2013.
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Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films
Authors:
Takayoshi Katase,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono
Abstract:
The effect of electron do** by trivalent charge state rare-earth ion (RE = La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 was examined using epitaxial films. Each of the RE substitutions suppressed the resistivity anomaly associated with the magnetic/structural phase transitions, leading to the resistivity drops and superconductivity transitions. Bulk superconductivity wa…
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The effect of electron do** by trivalent charge state rare-earth ion (RE = La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 was examined using epitaxial films. Each of the RE substitutions suppressed the resistivity anomaly associated with the magnetic/structural phase transitions, leading to the resistivity drops and superconductivity transitions. Bulk superconductivity was observed at the maximum onset critical temperature (Tconset) of 22.4 K for La-do** and 13.4 K for Ce-do**, while only broad resistivity drops were observed at 6.2 K for Pr-do** and 5.8 K for Nd-do** but neither zero resistivity nor distinct Meissner effect were observed at least down to 2 K. The decrease in Tconset with increasing the number of RE 4f electrons cannot be explained in terms of the crystalline qualities or crystallographic structure parameters of the BaFe2As2 films. It was clarified, based on resistivity-temperature analyses, that magnetic scattering became increasingly significant in the above order of the RE dopants. The negative magnetoresistance was enhanced by the Ce- and Pr-do**, implying that the decrease in Tc originates from magnetic pair breaking by interaction of the localized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals.
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Submitted 1 July, 2013;
originally announced July 2013.
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Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm2
Authors:
Hikaru Sato,
Takayoshi Katase,
Won Nam Kang,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono
Abstract:
The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρxy and the longitudinal resistivity ρxx follow power law scaling ρxy = Aρxxβ. In the temperature-sweep with a fixed field (T sweep), all of the β values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the β va…
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The mixed-state Hall effect was examined in a Ba(Fe1-xCox)2As2 epitaxial film with a high critical current density. The transverse resistivity ρxy and the longitudinal resistivity ρxx follow power law scaling ρxy = Aρxxβ. In the temperature-sweep with a fixed field (T sweep), all of the β values are independent of magnetic field up to 9 T, and are lower than 2.0 (around 1.8). In contrast, the β values in the magnetic-field sweep with a fixed temperature (H sweep) change from 1.8 to 2.0 as the temperature increases from 13 to 16 K even in the T/H region that overlaps with the T sweep measurements. These results indicate that the vortices introduced at low temperatures are trapped by strong pinning centers, but a portion of the vortices introduced at high temperatures are not strongly trapped by the pinning centers. The sign of ρxy is negative, and a sign reversal is not detected. These distinct scaling behaviors, which sharply contrast cuprates and MgB2, are explained by high-density c-axis pinning centers in the Ba(Fe1-xCox)2As2 epitaxial film and are consistent with a wider vortex liquid phase.
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Submitted 15 February, 2013;
originally announced February 2013.
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Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition
Authors:
Hidenori Hiramatsu,
Takayoshi Katase,
Toshio Kamiya,
Hideo Hosono
Abstract:
A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much…
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A non-equilibrium phase (Sr1-xLax)Fe2As2 was formed by epitaxial film-growth. The resulting films emerged superconductivity along with suppression of the resistivity anomaly that is associated with magnetic and structural phase transitions. The maximum critical temperature was 20.8 K, which is almost the same as that of directly electron-doped Sr(Fe1-xCox)2As2. Its electronic phase diagram is much similar to that of Sr(Fe1-xCox)2As2, indicating that the difference in the electron do** sites does not influence the superconducting properties of 122-type SrFe2As2.
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Submitted 1 February, 2013;
originally announced February 2013.
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Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1--xCox)2As2 (AE = alkaline earth)
Authors:
Takayoshi Katase,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono
Abstract:
This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet laser as an excitation source. The most critical parameter to produce the SrFe2As2:Co and BaFe2As2:Co phases is the substrate temperature (Ts). It is difficult…
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This paper reports comprehensive results on thin-film growth of 122-type iron-pnictide superconductors, AE(Fe1-xCox)2As2 (AE = Ca, Sr, and Ba, AEFe2As2:Co) by a pulsed laser deposition method using a neodymium-doped yttrium aluminum garnet laser as an excitation source. The most critical parameter to produce the SrFe2As2:Co and BaFe2As2:Co phases is the substrate temperature (Ts). It is difficult to produce highly-pure CaFe2As2:Co phase thin film at any Ts. For BaFe2As2:Co epitaxial films, controlling Ts at 800-850 °C and growth rate to 2.8-3.3 Å/s produced high-quality films with good crystallinity, flat surfaces, and high critical current densities > 1 MA/cm2, which were obtained for film thicknesses from 100 to 500 nm. The do** concentration x was optimized for Ba(Fe1-xCox)2As2 epitaxial films, leading to the highest critical temperature of 25.5 K in the epitaxial films with the nominal x = 0.075.
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Submitted 18 May, 2012;
originally announced May 2012.
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Ultralow-dissipative conductivity by Dirac fermions in BaFe$_2$As$_2$
Authors:
Yoshinori Imai,
Fuyuki Nabeshima,
Daisuke Nakamura,
Takayoshi Katase,
Hidenori Hiramatsu,
Hideo Hosono,
Atsutaka Maeda
Abstract:
We report on the anomalous behavior of the complex conductivity of BaFe$_{2}$As$_{2}$, which is related to the Dirac cone, in the terahertz (THz)-frequency region. Above the spin-density-wave (SDW) transition temperature, the conductivity spectra follow the Drude model. In the SDW state, the imaginary part of the complex conductivity, $σ_2$, is suppressed in comparison to that expected according t…
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We report on the anomalous behavior of the complex conductivity of BaFe$_{2}$As$_{2}$, which is related to the Dirac cone, in the terahertz (THz)-frequency region. Above the spin-density-wave (SDW) transition temperature, the conductivity spectra follow the Drude model. In the SDW state, the imaginary part of the complex conductivity, $σ_2$, is suppressed in comparison to that expected according to the Drude model. The real part, $σ_1$, exhibits nearly Drude-like behavior. This behavior (i.e., almost no changes in $σ_1$ and the depression of $σ_2$) can be regarded as the addition of extra conductivity without any dissipations in the Drude-type conductivity. The origin of this ultralow-dissipative conductivity is found to be due to conductivity contribution from quasiparticles within the Dirac cone. In other words, we are able to observe the dynamics of Dirac fermions through the conductivity spectra of BaFe$_2$As$_2$, clearly and directly.
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Submitted 2 February, 2012;
originally announced February 2012.
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Thin Film Growth and Device Fabrication of Iron-Based Superconductors
Authors:
Hidenori Hiramatsu,
Takayoshi Katase,
Toshio Kamiya,
Hideo Hosono
Abstract:
Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, d…
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Iron-based superconductors have received much attention as a new family of high-temperature superconductors owing to their unique properties and distinct differences from cuprates and conventional superconductors. This paper reviews progress in thin film research on iron-based superconductors since their discovery for each of five material systems with an emphasis on growth, physical properties, device fabrication, and relevant bulk material properties.
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Submitted 1 November, 2011;
originally announced November 2011.
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Identical effects of indirect and direct electron do** of superconducting BaFe2As2 thin films
Authors:
Takayoshi Katase,
Soshi Iimura,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono
Abstract:
Electron do** of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect do**), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film growth process. The substitution with La was substantiated by a systematic shrinkage of the c-axis lattice parameter due to the smaller ionic radius of La3+ than t…
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Electron do** of a 122-type iron pnictide BaFe2As2 by substituting the Ba site with an aliovalent ion (indirect do**), which had been unsuccessful by conventional solid-state synthesis methods, was achieved by a non-equilibrium film growth process. The substitution with La was substantiated by a systematic shrinkage of the c-axis lattice parameter due to the smaller ionic radius of La3+ than that of Ba2+. A negative Hall coefficient indicated that the majority carriers were electrons, as is consistent with this aliovalent ion do**. The La substitution suppressed an antiferromagnetic transition and induced bulk superconductivity at a maximum onset critical temperature (Tc) of 22.4 K. The electronic phase diagram for (Ba1-xLax)Fe2As2 was built, which revealed that the indirect electron do** at the Ba site with La [(Ba1-xLax)Fe2As2] exhibits almost the same Tc - do** level relation as that of the direct electron-do** at the Fe site with Co [Ba(Fe1-xCox)2As2]. This finding clarified that Tc in 122-type compounds is not affected by a crystallographic do** site, which is in sharp contrast to the 1111-type compounds, REFeAsO (RE = rare earth). It is tentatively attributed to the differences in their dimensionality of electronic structures and electron pairing symmetries.
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Submitted 25 April, 2012; v1 submitted 30 September, 2011;
originally announced October 2011.
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Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates
Authors:
Takayoshi Katase,
Hidenori Hiramatsu,
Vladimir Matias,
Chris Sheehan,
Yoshihiro Ishimaru,
Toshio Kamiya,
Keiichi Tanabe,
Hideo Hosono
Abstract:
High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layer…
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High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layers (delta fai MgO = 7.3o), and exhibited high self-field Jc up to 3.5 MA/cm2 at 2 K. These values are comparable to that on MgO single crystals and the highest Jc among iron pnictide superconducting tapes and wires ever reported. High in-field Jc suggests the existence of c-axis correlated vortex pinning centers.
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Submitted 20 June, 2011; v1 submitted 29 March, 2011;
originally announced March 2011.
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Advantageous grain boundaries in iron pnictide superconductors
Authors:
Takayoshi Katase,
Yoshihiro Ishimaru,
Akira Tsukamoto,
Hidenori Hiramatsu,
Toshio Kamiya,
Keiichi Tanabe,
Hideo Hosono
Abstract:
High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High criti…
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High critical temperature superconductors have zero power consumption and could be used to produce ideal electric power lines. The principal obstacle in fabricating superconducting wires and tapes is grain boundaries-the misalignment of crystalline orientations at grain boundaries, which is unavoidable for polycrystals, largely deteriorates critical current density. Here, we report that High critical temperature iron pnictide superconductors have advantages over cuprates with respect to these grain boundary issues. The transport properties through well-defined bicrystal grain boundary junctions with various misorientation angles (thetaGB) were systematically investigated for cobalt-doped BaFe2As2 (BaFe2As2:Co) epitaxial films fabricated on bicrystal substrates. The critical current density through bicrystal grain boundary (JcBGB) remained high (> 1 MA/cm2) and nearly constant up to a critical angle thetac of ~9o, which is substantially larger than the thetac of ~5o for YBCO. Even at thetaGB > thetac, the decay of JcBGB was much smaller than that of YBCO.
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Submitted 11 July, 2011; v1 submitted 26 November, 2010;
originally announced November 2010.
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Transport and magnetic properties of Co-doped BaFe_{2}As_{2} epitaxial thin films
Authors:
Shyam Mohan,
Toshihiro Taen,
Hidenori Yagyuda,
Yasuyuki Nakajima,
Tsuyoshi Tamegai,
Takayoshi Katase,
Hidenori Hiramatsu,
Hideo Hosono
Abstract:
We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low te…
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We report resistivity, Hall coefficient, current-voltage characteristics, and magneto-optical imaging measurements of epitaxial Co-doped BaFe_{2}As_{2} thin films deposited on MgO(001) substrate. The Hall resistivity of the films has a substantial contribution arising from anomalous Hall effect of ferromagnetic components. The critical current density (J_{c}) of the films is ~2 MA/cm^{2} at low temperatures. Differential magneto-optical images of the remanent state give similar J_{c} values and also exhibit presence of extended defects in the film.
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Submitted 2 August, 2010; v1 submitted 2 August, 2010;
originally announced August 2010.
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High Critical Current Density 4 MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O3 Substrates without Buffer Layers
Authors:
Takayoshi Katase,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono
Abstract:
High critical current densities Jc of 4 MA/cm2 at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high Jc. The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high cr…
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High critical current densities Jc of 4 MA/cm2 at 4 K were obtained in Co-doped BaFe2As2 (BaFe2As2:Co) epitaxial films grown directly on (La, Sr)(Al, Ta)O3 substrates by pulsed laser deposition. Use of a highly pure target and improvement of film homogeneity were the critical factors to achieve the high Jc. The improved BaFe2As2:Co epitaxial films contained almost no Fe impurity and showed high crystallinity (crystallite tilt angle delta omega = 0.5 deg and twist angle delta fai = 0.5 deg) and a sharp superconducting transition with a width of 1.1 K. It is considered that these improvements resulted in the enhanced superconducting properties comparable to those of single crystals.
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Submitted 12 May, 2010;
originally announced May 2010.
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DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films
Authors:
Takayoshi Katase,
Yoshihiro Ishimaru,
Akira Tsukamoto,
Hidenori Hiramatsu,
Toshio Kamiya,
Keiichi Tanabe,
Hideo Hosono
Abstract:
DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with…
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DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe2As2 epitaxial films on (La, Sr)(Al, Ta)O3 bicrystal substrates with 30deg misorientation angles. The 18 x 8 micro-meter^2 SQUID loop with an estimated inductance of 13 pH contained two 3 micro-meter wide grain boundary junctions. The voltage-flux characteristics clearly exhibited periodic modulations with deltaV = 1.4 micro-volt at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 x 10^-5 fai0/Hz^1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor-normal metal-superconductor junction nature of the bicrystal grain boundary.
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Submitted 4 July, 2010; v1 submitted 12 May, 2010;
originally announced May 2010.
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Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La, Sr)(Al, Ta)O3 bicrystal substrates
Authors:
Takayoshi Katase,
Yoshihiro Ishimaru,
Akira Tsukamoto,
Hidenori Hiramatsu,
Toshio Kamiya,
Keiichi Tanabe,
Hideo Hosono
Abstract:
Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10m-wide microbridges spanning a 30-degrees-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current-voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges…
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Josephson junctions were fabricated in epitaxial films of cobalt-doped BaFe2As2 on [001]-tilt (La,Sr)(Al,Ta)O3 bicrystal substrates. 10m-wide microbridges spanning a 30-degrees-tilted bicrystal grain boundary (BGB bridge) exhibited resistively-shunted-junction (RSJ)-like current-voltage characteristics up to 17 K, and the critical current was suppressed remarkably by a magnetic field. Microbridges without a BGB did not show the RSJ-like behavior, and their critical current densities were 20 times larger than those of BGB bridges, confirming BGB bridges display a Josephson effect originating from weakly-linked BGB.
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Submitted 11 April, 2010; v1 submitted 20 January, 2010;
originally announced January 2010.
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Terahertz conductivity spectroscopy of Co-doped BaFe$_2$As$_2$ Thin Film
Authors:
D. Nakamura,
Y. Imai,
A. Maeda,
T. Katase,
H. Hiramatsu,
H. Hosono
Abstract:
We investigated the complex conductivity spectrum of a Co-doped BaFe$_2$As$_2$ epitaxial thin film in the THz region. In the normal state, the complex conductivity shows a Drude-type frequency dependence, while in the superconducting state, the frequency dependence of the complex conductivity changes to that of a typical superconducting materials. We estimated the magnetic penetration depth at abs…
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We investigated the complex conductivity spectrum of a Co-doped BaFe$_2$As$_2$ epitaxial thin film in the THz region. In the normal state, the complex conductivity shows a Drude-type frequency dependence, while in the superconducting state, the frequency dependence of the complex conductivity changes to that of a typical superconducting materials. We estimated the magnetic penetration depth at absolute zero to be 710 nm and the superconducting gap energy to be 2.8 meV, which is considered to be the superconducting gap opened at the electron-type Fermi surface near the M point. We succeeded in obtaining the low-energy elementary excitation of a Fe-based superconductor using the electromagnetic method without invoking the Kramers-Kronig transformation.
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Submitted 25 May, 2010; v1 submitted 22 December, 2009;
originally announced December 2009.
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Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe$_2$As$_2$
Authors:
Takayoshi Katase,
Hidenori Hiramatsu,
Hiroshi Yanagi,
Toshio Kamiya,
Masahiro Hirano,
Hideo Hosono
Abstract:
Epitaxial growth of Fe-based superconductors such as Co-doped SrFe$_2$As$_2$ (SrFe$_2$As$_2$:Co) was reported recently, but has still insufficient properties for device application because they have rough surfaces and are decomposed by reactions with water vapor in an ambient atmosphere. This letter reports that epitaxial films of Co-doped BaFe$_2$As$_2$ grown at 700 oC show the onset supercondu…
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Epitaxial growth of Fe-based superconductors such as Co-doped SrFe$_2$As$_2$ (SrFe$_2$As$_2$:Co) was reported recently, but has still insufficient properties for device application because they have rough surfaces and are decomposed by reactions with water vapor in an ambient atmosphere. This letter reports that epitaxial films of Co-doped BaFe$_2$As$_2$ grown at 700 oC show the onset superconducting transition tempearture of 20 K. The transition is sharper than those observed on the SrFe$_2$As$_2$:Co films, which would originate from their improved crystallinity. These films also have atomically-flat surfaces with steps-and-terraces structures and exhibit chemical stability against exposure to water vapor.
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Submitted 3 July, 2009;
originally announced July 2009.
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Water-induced superconductivity in SrFe2As2
Authors:
Hidenori Hiramatsu,
Takayoshi Katase,
Toshio Kamiya,
Masahiro Hirano,
Hideo Hosono
Abstract:
It has been considered that FeAs-based high transition temperature (high-Tc) superconductors need electron or hole do** by aliovalent ion substitution or large off-stoichiometry in order to induce superconductivity. We report that exposure of undoped SrFe2As2 epitaxial thin films to water vapor induces a superconducting transition. These films exhibit a higher onset-Tc (25 K) and larger magnet…
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It has been considered that FeAs-based high transition temperature (high-Tc) superconductors need electron or hole do** by aliovalent ion substitution or large off-stoichiometry in order to induce superconductivity. We report that exposure of undoped SrFe2As2 epitaxial thin films to water vapor induces a superconducting transition. These films exhibit a higher onset-Tc (25 K) and larger magnetic field anisotropy than those of cobalt-doped SrFe2As2 epitaxial films, suggesting that the mechanism for the observed superconducting transition differs from that of the aliovalent-ion doped SrFe2As2. The present finding provides a new approach to induce superconductivity with a higher Tc in FeAs-based superconductors.
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Submitted 22 March, 2009;
originally announced March 2009.
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Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2 with Bilayered FeAs Structures and their Magnetic Anisotropy
Authors:
Hidenori Hiramatsu,
Takayoshi Katase,
Toshio Kamiya,
Masahiro Hirano,
Hideo Hosono
Abstract:
Superconducting epitaxial films of Fe-based layered arsenide, Co-doped SrFe2As2, were grown at 700oC on mixed perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed-laser deposition. Both the epitaxial film and an (001)-oriented film grown at 600oC exhibited superconducting transitions at ~ 20 K. The zero-resistance states of the epitaxial film were sustained under a magnetic fi…
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Superconducting epitaxial films of Fe-based layered arsenide, Co-doped SrFe2As2, were grown at 700oC on mixed perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed-laser deposition. Both the epitaxial film and an (001)-oriented film grown at 600oC exhibited superconducting transitions at ~ 20 K. The zero-resistance states of the epitaxial film were sustained under a magnetic field (H) of 9 T at 9 K when H was parallel to the c-axis, while they were sustained at higher temperatures up to 10 K for H parallel to the a-axis. This is the first demonstration of superconducting thin films of FeAs-based new superconductors.
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Submitted 3 September, 2008; v1 submitted 14 August, 2008;
originally announced August 2008.
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Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO
Authors:
Hidenori Hiramatsu,
Takayoshi Katase,
Toshio Kamiya,
Masahiro Hirano,
Hideo Hosono
Abstract:
Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those o…
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Epitaxial thin films of LaFeAsO were fabricated on MgO (001) and mixed-perovskite (La, Sr)(Al, Ta)O3 (001) single-crystal substrates by pulsed laser deposition using a Nd:YAG second harmonic source and a 10 at.% F-doped LaFeAsO disk target. Temperature dependences of the electrical resistivities showed no superconducting transition in the temperature range of 2-300 K, and were similar to those of undoped polycrystalline bulk samples. The transmittance spectrum exhibited a clear peak at ~0.2 eV, which is explained by ab-initio calculations.
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Submitted 19 September, 2008; v1 submitted 14 August, 2008;
originally announced August 2008.
