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Nanopatterning of multicomponent van der Waals heterostructures using atomic force microscopy
Authors:
A. L. Shilov,
L. Elesin,
A. Grebenko,
V. I. Kleshch,
M. A. Kashchenko,
I. Mazurenko,
E. Titova,
E. Zharkova,
D. S. Yakovlev,
K. S. Novoselov,
D. A. Ghazaryan,
V. Dremov,
D. A. Bandurin
Abstract:
Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching, widely applied to pattern such heterostructures, however, impose some limitations on the edge accuracy and resolution, as revealed through numerous e…
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Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching, widely applied to pattern such heterostructures, however, impose some limitations on the edge accuracy and resolution, as revealed through numerous experiments with vdW quantum dots and point contacts. Here we present an alternative approach for electrode-free nanopatterning of thick multilayer vdW heterostructures based on atomic force microscopy (AFM). By applying an AC voltage of a relatively small frequency (1-10 kHz) between the sharp platinum tip and the substrate, we realize high-resolution ($\lesssim 100$ nm) etching of thick multicomponent heterostructures if the latter are deposited onto graphite slabs. Importantly, unlike more conventional electrode-free local anodic oxidation, our method does not require a special environment with excess humidity, can be applied at ambient conditions, and enables the patterning of multilayer heterostructures composed of graphene, graphite, hexagonal boron nitride (hBN), NbSe$_{2}$, WSe$_{2}$, and more.
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Submitted 24 June, 2024;
originally announced June 2024.
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Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene
Authors:
M. Kravtsov,
A. L. Shilov,
Y. Yang,
T. Pryadilin,
M. A. Kashchenko,
O. Popova,
M. Titova,
D. Voropaev,
Y. Wang,
K. Shein,
I. Gayduchenko,
G. N. Goltsman,
M. Lukianov,
A. Kudriashov,
T. Taniguchi,
K. Watanabe,
D. A. Svintsov,
A. Principi,
S. Adam,
K. S. Novoselov,
D. A. Bandurin
Abstract:
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superco…
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Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.
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Submitted 29 March, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
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Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier
Authors:
Dmitry A. Mylnikov,
Mikhail A. Kashchenko,
Kirill N. Kapralov,
Davit A. Ghazaryan,
Evgenii E. Vdovin,
Sergey V. Morozov,
Kostya S. Novoselov,
Denis A. Bandurin,
Alexander I. Chernov,
Dmitry A. Svintsov
Abstract:
Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional…
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Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/graphene tunnel structures with localized defect states under mid-IR illumination. We demonstrate that the photocurrent in these devices is proportional to the second derivative of the tunnel current with respect to the bias voltage, peaking during tunneling through the hBN impurity level. We revealed that the origin of the photocurrent generation lies in the change of the tunneling probability upon radiation-induced electron heating in graphene layers, in agreement with the theoretical model that we developed. Finally, we show that at a finite bias voltage, the photocurrent is proportional to the either of the graphene layers heating under the illumination, while at zero bias, it is proportional to the heating difference. Thus, the photocurrent in such devices can be used for accurate measurements of the electronic temperature providing a convenient alternative to Johnson noise thermometry.
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Submitted 9 December, 2023;
originally announced December 2023.
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Fundamental limits of few-layer NbSe$_2$ microbolometers at terahertz frequencies
Authors:
K. Shein,
E. Zharkova,
M. A. Kashchenko,
A. I. Kolbatova,
A. Lyubchak,
L. Elesin,
E. Nguyen,
A. Semenov,
I. Charaev,
A. Schilling,
G. N. Goltsman,
K. S. Novoselov,
I. Gayduchenko,
D. A. Bandurin
Abstract:
The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Owing to their exceptional signal-to-noise ratio and fast photoresponse, superconducting hot-electron bolometers (HEBs) have become a critical component in these applications. While superconducting HEBs are…
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The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Owing to their exceptional signal-to-noise ratio and fast photoresponse, superconducting hot-electron bolometers (HEBs) have become a critical component in these applications. While superconducting HEBs are traditionally made from sputtered superconducting thin films like Nb or NbN, the potential of layered van der Waals (vdW) superconductors is untapped at THz frequencies. Here, we report the fabrication of superconducting HEBs out of few-layer NbSe$_2$ microwires. By improving the interface between NbSe$_2$ and metal leads connected to a broadband antenna, we overcome the impedance mismatch between this vdW superconductor and the radio frequency (RF) readout circuitry that allowed us to achieve large responsivity THz detection over the range from 0.13 to 2.5 THz with minimum noise equivalent power of 7~pW$\sqrt{Hz}$. Using the heterodyne sub-THz mixing technique, we reveal that NbSe$_2$ superconducting HEBs are relatively fast and feature a characteristic response time in the nanosecond range limited by the slow heat escape to the bath through a SiO$_2$ layer, on which they are assembled, in agreement with energy relaxation model. Our work expands the family of materials for superconducting HEBs technology, reveals NbSe$_2$ as a promising platform, and offers a reliable protocol for the in-lab production of custom bolometers using the vdW assembly technique.
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Submitted 21 November, 2023;
originally announced November 2023.
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High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices
Authors:
A. L. Shilov,
M. A. Kashchenko,
P. A. Pantaleón,
M. Kravtsov,
A. Kudriashov,
Z. Zhan,
T. Taniguchi,
K. Watanabe,
S. Slizovskiy,
K. S. Novoselov,
V. I. Fal'ko,
F. Guinea,
D. A. Bandurin
Abstract:
Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the u…
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Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS.
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Submitted 8 November, 2023;
originally announced November 2023.
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Zero-bias photodetection in 2d materials via geometric design of contacts
Authors:
Valentin A. Semkin,
Aleksandr V. Shabanov,
Dmitry A. Mylnikov,
Mikhail A. Kashchenko,
Ivan K. Domaratskiy,
Sergey S. Zhukov,
Dmitry A. Svintsov
Abstract:
Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ do** being a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in 2d material flakes exploiting the geometrical non-equivalence of source and drain contacts. As a p…
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Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ do** being a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in 2d material flakes exploiting the geometrical non-equivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe$_2$ with mutually orthogonal metal leads. Upon uniform illumination with linearly-polarized light, the device demonstrates non-zero photocurrent which flips its sign upon 90$^\circ$ polarization rotation. The origin of zero-bias photocurrent lies in polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair, and selectively activates the internal photoeffect at the respective metal-PdSe$_2$ Schottky junction. The proposed technology of contact engineering can be extended to arbitrary 2d materials and detection of both polarized and natural light.
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Submitted 29 March, 2023;
originally announced March 2023.
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Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
Authors:
Dmitry Mylnikov,
Elena I. Titova,
Mikhail A. Kashchenko,
Ilya V. Safonov,
Sergey S. Zhukov,
Valentin A. Semkin,
Kostya S. Novoselov,
Denis A. Bandurin,
Dmitry A. Svintsov
Abstract:
Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gappe…
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Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically-induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient and photo-resistivity at cryogenic temperatures T ~ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel do** even at small band gaps ~ 10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intra-band thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.
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Submitted 8 December, 2022;
originally announced December 2022.
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Probing Dy3+ magnetic moments in multiferroic perovskite DyMnO3 by optical spectroscopy
Authors:
M. A. Kashchenko,
S. A. Klimin,
A. M. Balbashov,
M. N. Popova
Abstract:
We present a detailed temperature-dependent spectroscopic study of DyMnO3 single crystals with distorted perovskite structure. Energies of 36 crystal-field levels of Dy3+ in paramagnetic DyMnO3 were determined. The Dy3+ ground Kramers doublet does not split at T_N^Mn = 39 K and splits below Tlock = 18 K. The splitting grows fast at temperatures near T_N^Dy = 6.5 K and reaches Δ0 = 11 cm-1 at 4 K.…
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We present a detailed temperature-dependent spectroscopic study of DyMnO3 single crystals with distorted perovskite structure. Energies of 36 crystal-field levels of Dy3+ in paramagnetic DyMnO3 were determined. The Dy3+ ground Kramers doublet does not split at T_N^Mn = 39 K and splits below Tlock = 18 K. The splitting grows fast at temperatures near T_N^Dy = 6.5 K and reaches Δ0 = 11 cm-1 at 4 K. Using the experimental temperature dependence Δ0(T), we calculate the dysprosium magnetic moment mDy(T) and the dysprosium contribution into specific heat and magnetic susceptibility. Analysing all the experimental data, we conclude that the Dy-Mn interaction is of the Dzyaloshinskii-Moriya type.
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Submitted 12 November, 2016;
originally announced November 2016.
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Infrared study of lattice dynamics and spin-phonon and electron-phonon interactions in multiferroic TbFe3(BO3)4 and GdFe3(BO3)4
Authors:
S. A. Klimin,
A. B. Kuzmenko,
M. A. Kashchenko,
M. N. Popova
Abstract:
We present a comparative far-infrared reflection spectroscopy study of phonons, phase transitions, spin-phonon and electron-phonon interactions in isostructural multiferroic iron borates of gadolinium and terbium. The behavior of phonon modes registered in a wide temperature range is consistent with a weak first-order structural phase transition (Ts = 143 for GdFe3(BO3)4 and 200 K for TbFe3(BO3)4)…
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We present a comparative far-infrared reflection spectroscopy study of phonons, phase transitions, spin-phonon and electron-phonon interactions in isostructural multiferroic iron borates of gadolinium and terbium. The behavior of phonon modes registered in a wide temperature range is consistent with a weak first-order structural phase transition (Ts = 143 for GdFe3(BO3)4 and 200 K for TbFe3(BO3)4) from high-symmetry high-temperature R32 structure into low-symmetry low-temperature P3121 one. The temperature dependences of frequencies, oscillator strengths, and dam** constants of some low-frequency modes reveal an appreciable lattice anharmonicity. Peculiarities in the phonon mode behavior in both compounds at the temperature of an antiferromagnetic ordering (TN = 32 K for GdFe3(BO3)4 and 40 K for TbFe3(BO3)4) evidence the spin-phonon interaction. In the energy range of phonons, GdFe3(BO3)4 has no electronic levels but TbFe3(BO3)4 possesses several ones. We observe an onset of new bands in the excitation spectrum of TbFe3(BO3)4, due to a resonance interaction between a lattice phonon and 4f electronic crystal-field excitations of Tb3+. This interaction causes delocalization of the CF excitations, their Davydov splitting, and formation of coupled electron-phonon modes.
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Submitted 11 December, 2015;
originally announced December 2015.
